A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 1.0 mA 12 V
BVCBO IC = 100 µA20 V
ICBO VCB = 8.0 V 200 µ
µµ
µA
BVEBO IE = 50 µA1.5 V
hFE VCE = 8.0 V IC = 10 mA 30 300 ---
Ccb VCB = 8.0 V f = 1.0 MHz 0.25 pF
ftVCE = 8.0 V IC = 25 mA f = 1.0 GHz 8.0 GHz
|
|||S21E|
|||2VCE = 8.0 V IC = 25 mA f = 1.0 GHz
f = 2.0 GHz 16.9
12.0 dB
GNF VCE = 8.0 V IC = 0 mA f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz 10
16.5
12 dB
NF VCE = 8.0 V IC = 0 mA f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
1.0
1.5
2.5 2.0 dB
SILICON NPN RF TRANSISTOR
MRF572
DESCRIPTION:
The MRF572 is Designed for Low
Noise General Purpose VHF,UHF
Amplif ier and Oscillator Applications.
MAXIMUM RATINGS
IC60 mA
VCE 12 V
PDISS 500 mW @ T C = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +200 OC
PACKAGE STYLE 100MIL CERAMIC STRIPLINE
1 = Collector 2 & 4 = Emitter
3 = Base
