BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Rectifier Reverse Voltage 300 to 400V Forward Current 8.0A Reverse Recovery Time 35ns ITO-220AC (BYV29F, UGF8 Series) 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54) TO-220AC (BYV29, UG8 Series) 0.140 (3.56) DIA. 0.130 (3.30) 0.185 (4.70) 0.415 (10.54) MAX. 0.131 (3.39) DIA. 0.122 (3.08) 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) DIA. 0.055 (1.39) 0.045 (1.14) 0.676 (17.2) 0.646 (16.4) 0.600 (15.5) 0.580 (14.5) 0.350 (8.89) 0.330 (8.38) 0.113 (2.87) 0.103 (2.62) PIN 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 1 2 0.191 (4.85) 0.171 (4.35) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) PIN 1 2 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) PIN 1 PIN 2 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) PIN 1 PIN 2 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.69) 0.205 (5.20) 0.195 (4.95) 0.022 (0.55) 0.014 (0.36) CASE 0.105 (2.67) 0.095 (2.41) 0.110 (2.80) 0.100 (2.54) 0.060 (1.52) TO-263AB (BYV29B, UGB8 Series) 0.022 (0.56) 0.014 (0.36) 0.190 (4.83) 0.411 (10.45) 0.380 (9.65) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) 0.245 (6.22) MIN Mounting Pad Layout TO-263AB K Dimensions in inches and (millimeters) 0.055 (1.40) 0.360 (9.14) 0.320 (8.13) 0.047 (1.19) 1 K 2 0.624 (15.85) 0.591 (15.00) 0-0.01 (0-0.254) 0.110 (2.79) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.021 (0.53) 0.014 (0.36) PIN 1 PIN 2 0.205 (5.20) K - HEATSINK 0.140 (3.56) 0.110 (2.79) 0.195 (4.95) Features Mechanical Data * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Ideally suited for freewheeling diode power factor correction applications * Soft recovery characteristics * Excellent high temperature switching * Optimized to reduce switching losses * High temperature soldering in accordance with CECC 802 / Reflow guaranteed * Glass passivated chip junction Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g Document Number 88557 17-Sep-03 www.vishay.com 1 BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings UG8FT UG8GT Symbol BYV29-300 BYV29-400 Unit Maximum repetitive peak reverse voltage VRRM 300 400 V Maximum working reverse voltage VRWM 300 400 V Maximum RMS voltage VRMS 210 280 V Maximum DC blocking voltage VDC 300 400 V Maximum average forward rectified current at TC = 100C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) at TC = 100C IF(AV) 8.0 A IFSM 110 A TJ, TSTG -40 to +150 C VISOL 4500(1) 3500(2) 1500(3) V (TC = 25C unless otherwise noted) Parameter Operating junction and storage temperature range RMS Isolation voltage (UGF & BYV29F types only) from terminals to heatsink with t = 1.0 second, RH 30% Electrical Characteristics (T C = 25C unless otherwise noted) Parameter Symbol UG8FT UG8GT BYV29-300 BYV29-400 Unit (4) Maximum instantaneous forward voltage IF = 8A, TJ = 25C IF = 8A, TJ = 150C IF = 20A, TJ = 25C VF TC = 25C TC = 100C IR 10 350 A Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A trr 35 ns Maximum reverse recovery time at IF = 1.0A, di/dt = 100A/s, VR = 30V, Irr = 0.1 IRM trr 50 ns Maximum reverse recovery current at IF = 10A, di/dt = 50A/s, VR = 30V, TC = 100C IRM 5.5 A Maximum recovered stored charged at IF = 2A, di/dt = 20A/s, VR = 30V, Irr = 0.1 IRM Qrr 55 nC Maximum DC reverse current at VRRM Thermal Characteristics (T C Typical thermal resistance from junction to case V UG8 UGF8 UGB8 Symbol BYV29 BYV29F BYV29B Unit RJC 2.5 5.5 2.5 C/W = 25C unless otherwise noted) Parameter 1.25 1.03 1.40 Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19") (4) Pulse test: 300s pulse width, 1% duty cycle www.vishay.com 2 Document Number 88557 17-Sep-03 BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 - Maximum Forward Current Derating Curve 150 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 12 10 8.0 6.0 4.0 2.0 125 100 75 50 25 0 0 0 25 50 75 100 125 150 175 1 10 Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Instantaneous Reverse Leakage Current (A) 1,000 TJ = 125C TJ = 100C 1 TJ = 25 C 0.1 0.4 0.6 0.8 TJ = 125C 100 10 0.01 0.2 1.0 1.2 1.4 TJ = 100C 10 1 TJ = 25C 0.1 0.01 20 1.6 Instantaneous Forward Voltage (V) 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig 5 -- Reverse Switching Characteristics Per Leg Fig. 6 - Typical Junction Capacitance 160 100 TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p trr Qrr 140 di/dt = 150A/s 120 di/dt = 50A/s 100 di/dt = 100A/s di/dt = 20A/s 80 60 40 di/dt = 100A/s Junction Capacitance (pF) Stored Charge/Reverse Recovery Time (nC/ns) 100 Case Temperature (C) 100 Instantaneous Forward Current (A) TC = 100C 8.3ms Single Half Sine-Wave (JEDEC Method) 10 20 di/dt = 150A/s di/dt = 20A/s 0 25 50 75 100 Junction Temperature (C) Document Number 88557 17-Sep-03 125 1 0.1 1 10 100 Reverse Voltage (V) www.vishay.com 3