FAIRCHILD SEMICONDUCTOR eran ala FAIRCHILD RG eee A Schlumberger Company 3469674 FAIRCHILD SEMICONDUCTOR ay DE sucsn7y O027b05 g I 84D 27605 D 2N5320/2N5321 1-77-97 2N5322/2N5323 10 Watt NPN-PNP Silicon Power T BST Veewsn ... -0.7 V hee ... 40-250 @ Vee = 4.0V, 1c = O.5A Complements ... 2N5320, NPN (2N5322, PNP); 2N5321, NPN (2N5322, PNP) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65 C to 200C Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Case Temperature 10 W Linear Derating Factor 0.057W/ C Voltages & Currents 5320 Vceo Collector to Emitter Voltage 75V Vcso Collector to Base Voltage 100 V Veso Emitter to Base Voitage 7.0V Ie Collector Current 2.0A la Base Current 10A Voltages & Currents 5322 Vero Collector to Emitter Voltage ~75V Vceo Collector to Base Voltage 100 V Veso Emitter to Base Voltage -7.0V Io Collector Current 2.0A Is Base Current 10A 321 50 V 75V 5.0 V 2.0A 1.0A 5322 50 V ~75V 5.0 V 20A 1.0A PACKAGE 2N5320 TO-39 2N5321 TO-39 2N5322 TO-39 2N5323 TO-39 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 5320 53214 SYMBOL | CHARACTERISTIC MIN MAX| MIN MAX] UNITS TEST CONDITIONS leao Emitter Cutoff Current 0.1 mA Ves=7.0V 0.1 mA Ves = 5.0 V NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. Pulse conditions: length = 300 ps; duty cycle < 10% 3. Pulse Rep. Frequency = 1 kHz, pulse width = 20 us. 4. These ratings give a maximum junction temperature of 200C and junction-to-case thermal resistance of 0.2 C/W (deraling factor of 0.057 WC. 5 Emitter diode is reversed biased. 6. For product family characteristic curves, refer to Curve Set T1314 (2N5320 and 2N5321) and Curve Set 7414 (2N5322 and 2N5323). ey |FAIRCHILD SEMICONDUCTOR 84 DE fs4e9674 ooa7eon 2 i 3469674 FAIRCHILD SEMICONDUCTOR 84D 27606 D7.33-07 2N5320/2N5321 2N5322/2N5323 TT AS-19 I 5320 321 | SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS | leex Collector Cutoff Current 5.0 mA | Voz = 70 V, Vee = 1.5V, | (Note 3) Te = 150C 5.0 mA Voce = 45 V, Vee = 1.5 V, Tc = 150C | 0.1 mA Vce = 100 V, Vee = 1.5 V 0.1 mA Voce = 75 V, Vez = 1.5 V t re DC Current Gain (Note 2) 10 Ic =1.0 A, Vce = 2.0 V 30 130 40 250 Ic = 0.5 A, Vee = 4.0 V Voeorus | Collector to Emitter Sustaining; 75 50 V lc = 100 mA, Is = 0 Voltage (Note 2) Veetsat Collector to Emitter Saturation 0.5 0.8 Vv ic = 500 mA, Ip = 50 mA Voltage (Note 2) Veeion) Base to Emitter On 1.1 1.4 Vv le = 500 MA, Vce = 4.0 V Voltage (Note 2) hte Small Signal Current Gain 5.0 5.0 le = 50 mA, Vce = 4.0 V, f = 10 MHz ton Turn On Time (Note 3) 80 80 ns Ic = 500 mA, fa1 = 50 mA tott Turn Off Time (Note 3) 800 800 ns le = 500 mA, fey = 50 mA, las = ~50 MA 322 323 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX] UNITS TEST CONDITIONS leao Emitter Cutoff Current 0.1 mA | Vep = 7.0 V 0.1 mA Ves =-5.0V loex Collector Cutoff Current 5.0 mA | Vce = 70 V, Vez = 1.5 V, Te = 150C 5.0 mA Voce = 45 V, Vee = -1.5 V, To = 150C 0.1 mA Voce = 100 V, Vee = 1.5 V 0.1 mA Vor =75 V, Vee = 1.5 V fre DC Current Gain 10 Ic = 1.0 A, Vee = -2.0 V 30 130 40 250 Ie = 500 mA, Vce = 4.0 V Veeoiuss | Collector to Emitter Sustaining | 75 50 Vv lc = 100 mA, |p = 0 Voltage (Note 2) Veeisat) Collector to Emitter Saturation -0.7 1.20 Vv lc = 50 mA, Ip = 50 MA Voltage (Note 2) Veeron) Base to Emitter On -1.4 -1.4 Vv lc = 500 mA, Vce = 4.0 V Voltage (Note 2) te Small Signal Current Gain 5.0 5.0 Ic = 50 MA, Vce = 4.0 V, f = 10 MHz ton Turn On Time (Note 3) 100 400 ns Ic = 500 mA, Ie: = ~50 MA tott Turn Off Time (Note 3) 1000 1000 ns lo = 500 mA, fs: = 50 mA, tne = 50 MAFAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR eee FAIRCHILD fc A Schlumberger Company 2N5336/2N5338 ay DE fp 3465674 Noea7bO? 4 84D 27607 D Ty 33-05 6 Watt NPN Silicon Power e Pp... 6.0 W@ Tc = 26C PACKAGE LVceo .-. 80 Vand 100 V (Min) 2N5336 TO-5 Vesa --. 1.2 V (Max) @ 5.0A 2N5338 TO-5 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65C to 200C Operating Junction Temperature 200C ae Power Dissipation Total Dissipation at 25C Case Temperature 6.0 W Voltages & Currents 5336 5338 Vceo Collector to Emitter Voltage 80 V ~ 100 V Vcrzo Collector to Base Voltage 80 Vv 100 V Vero Emitter to Base Voltage 6.0V 6.0V Ic Collector Current 5.0A 5.0A Is Base Current 1.0A 1.0A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 4) 5336 5338 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS les0 Emitter Cutoff Current 100 100 pA | Vea = 6.0 V, Ic =0 Icgo Collector Cutoff Current 10 pA |Vce = 80 V, le = 0 10 pA | Vce = 100 V, le = 0 \cex Collector Cutoff Current 10 pA |Vce =75 V, Vee = 1.5 V 1.0 mA | Vce = 75 V, Ves = 1.5 V, Te = 150C 10 pA |Vce = 90 V, Vee = 1.5 V 1.0 mA | Vce = 90 V, Vez = 1.5, Tc = 150C here DC Current Gain (Note 2) 30 30 ic = 500 MA, Vee = 2.0 V 30 120 | 30 120 Io = 2.0 A, Voce = 2.0 V 20 20 Io = $8.0 A, Voce = 2.0 V NOTES: 4. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. Pulse conditions: tength = 300 ps; duty cycle u 2%. 2. 3, These ratings give a maximum junction temperature of 2000C and junction-to-case thermal resistance 4. For product family characteristic curves, refer to Curve Set T316. 2 0f33.30C/W (linear derating factor of 34 mW/0C. 3-327FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR Ay DEP 34b9674 oo27L08 ba I 84D 27608 D 2N5336/2N5338 T-43-0S ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwi se noted) (Note 6) 5336 5338 SYMBOL | CHARACTERISTIC MIN MAX! MIN MAX] UNITS TEST CONDITIONS Veeotsus | Collector to Emitter Sustaining | 80 100 Vv Ig = 50 mA, Ip = 0 Voltage (Note 2) Voetsat) Collector to Emitter Saturation 0.7 0.7 Vv Io = 2.0 A, lp = 200 mA Voltage (Pulsed) (Note 2) 1.2 1.2 Vv Ic = 5.0 A, Ip = 500 MA Vectsad Base Saturation Voltage 1.2 1.2 Vv Ic =2.0 A, lp = 200 MA (Pulsed) (Note 2) 1.8 1.8 Vv Io = 5.0 A, Ip = 500 mA ta Turn On Delay Time 100 100 ns Io =2.0 A, Voc = 4.0 V, Ia, = 200 mA t Turn On Rise Time 100 400 ns Ico = 2.0 A, Veo = 40 V, las = 200 MA ts Turn Off Storage Time 2.0 2.0 ps Io = 2.0 A, Voc = 40 V, Iai = Isa = 200 MA tr Turn Off Fal! Time 200 200 ns Io = 2.0 A, Veo = 40 V, Ie: = ln2 = 200 MA 3-328FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR FAIRCHILD See A Schlumberger Company 2N5415/2N5416 PNP Silicon Power Transistor ay DE J ayesn24 q027bih b i . 84D 27611 D T-?3-(7 10 W Dissipation at 25C Case 1 A (Max) Continuous Collector Current Up to 350 V Vceo Rating (2N5416) Complements ... 2N3439, 2N3440 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65C to 200C PACKAGE 2N5415 TO-39 2N5416 TO-39 Operating Junction Temperature 200 C 4 Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Case Temperature 10 W Voitages & Currents (Note 4) 5415 5416 Vceo Collector to Emitter Voltage ~200 V 300 V Vcao Collector to Base Voltage ~200 V 350 V Veso Emitter to Base Voltage -4.0V -4.0V le Collector Current (Continuous) 10A 1.0A lp Base Current (Continuous) O.5A O5A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 5415 5416 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX {| UNITS TEST CONDITIONS lego Emitter Cutoff Current 20 HA | Ves = -4,0 V, Io = 0 20 BA Ves = 6.0 V, le =0 Ieao Collector Cutoff Current 50 HA | Vos = -175 V, le = 0 50 LA Vos = 280 V, le =O Icev Collector Cutoff Current 50 BA Voce = 200 V, Vez = 1.5 V 50 BA Vce = 300 V, Ver = 1.5 V Iceo Collector Cutoff Current 50 HA | Vee = 150 V, le = 0 50 BA Vee = 250 Vv, ls =O Hee DC Current Gain (Note 5) 30 150 | 30 120 Ic = 50 mA, Vee = 10 V NOTES: Pulse conditions: length = 300 ys; duty cycle = 2%, For product family characteristic curves, refer to Curve Set 7443, PAR ON os 3-334 . These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 200 C and junction-to-case thermal resistance of 0.2 C/W (derating factor of 0.057 mW/* C). Rating refers to a high current point where collector to emitter voltage is lowest.FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR 84D 27612 OD 2N5415/2N5416 T+ 3347 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 5415 5416 SYMBOL] CHARACTERISTIC MIN MAX; MIN MAX | UNITS TEST CONDITIONS Veeotsuss | Collector to Emitter Sustaining] 200 300 Vv Ic = 50 mA, tp = 0 Voltage (Note 5) Veentsuss | Collector to Emitter Sustaining 350 Vv lc = 50 mA, Ree = 50 2 Voltage (Note 5) Veeteatt Collector to Emitter Saturation 2.5 2.0 Vv lc = 50 mA, Is = 5.0 mA Voltage (Note 5) Veeon: Base to Emitter On Voltage -1.5 -1.5 Vv le = 50 MA, Vce = 10 V Con Output Capacitance 15 15 pF Von = 10 V, le =O f = 1.0 MHz Cw Input Capacitance 75 75 pF Ves = 5.0V, lo =0 f = 1.0 MHz [hire Magnitude of Common Emitter} 3.0 3.0 le = 10 MA, Vee = 10 V, Small Signal Current Gain f = 5.0 MHz Na Small Signal Current Gain 25 25 lc = 5.0 mA, Vee = 10 V, f = 1.0 kHz Re(hie) Real Part of Common Emitter 300 300 2 Ilo =5.0 mA, Voce = 10 V, Small Signal Short- f =1.0 MHz Circuit Impedance Is/b Second Breakdown Collector 100 100 MA | Vce =-100V, t= 1.05 Current (non repetitive) 3-332 ay pe ayesn74 ooatei2 a &f - |FAIRCHILD SEMICONDUCTOR cee armen 3469674 FAIRCHILD SEMICONDUCTOR eS FAIRCHILD ey A Schlumberger Company Vceo ... 160 V (Min) (MPS/FTSO5551) bre ... 80-250 @ 10 mA (MPS/FTSO5551) Veewan ., 0.2 V (max) @ 50 mA (MPS/FTSO5551) Complements ... 2N5400, 2N5401 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 150C BY DE fp 3ubab74 0027613 0 |. 84D 27613 D 2N5550/FTSO5550 7-27-23 2N5551/MPS5551 FTSO5551 NPN Small Signal High Voltage General Purpose Amplifiers PACKAGE 2N5550 TO-92 2N5551 TO-92 MPS5551 TO-92 FTSO5550 TO-236AA/AB FTSOS551 TO-236AA/AB Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Totai Dissipation at 2N FTSsO 25C Ambient Temperature 0.625 W 0.350 W* 25 C Case Temperature 1.0 W Voltages & Currents 5550 5551 Vceo Collector to Emitter Voltage 140 V 160 V (Note 4) Vcso Collector to Base Voltage 160 V 180 V Veso Emitter to Base Voltage 6.0 V 6.0 V Ic Collector Current 600 MA 600 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 5550 5551 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown} 140 160 Vv Ic = 1.0 mA, lp =O Voltage BVceo Coilector to Base Breakdown =| 160 180 Vv Ic = 100 pA, le =O Voltage BVeso Emitter to Base Breakdown 6.0 6.0 V le = 10 pA, Ie = 0 Voltage leno Emitter Cutoff Current 50 50 nA | Ves =4.0V, le =0 Iceo Collector Cutoff Current 100 nA Voa = 100 V, lg =0 50 nA Ves = 120 V, le =O 100 BA Ves = 100 V, le =O, Ta= 100C 50 BA Ves = 120 V, le =0, Ta=100C NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 80 mW/? C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/* C). Pulse conditions: length = 300 ys; duty cycle = 1%. For product family characteristic curves, refer to Curve Set T1447. Package mounted on 89.5% alumina 8 mm x 8 mm x 0.6 mm, oS 8-333 Rating refers to a high current point where collector to emitter voltage is lowest.1 tsa ei pa FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR 84D 27614 OD 2N5550/FTSO5550 ONSS51/MPS5551 7 24.2.3 FTSO5551 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 5550 5551 SYMBOL | CHARACTERISTIC MIN MAX] MIN MAX| UNITS TEST CONDITIONS fre DC Pulse Current Gain (Note 5); 60 80 Ic = 1.0 mA, Vor = 5.0 V 60 250 | 80 250 lc = 10 MA, Voce = 5.0 V 20 380 Ic = 50 MA, Vce = 5.0 V Veetsat Collector to Emitter Saturation 0.15 0.15 Vv lo = 10 mA, le =1.0mMA Voltage (Note 5) . 0.25 0.25 Vv tc = 50 mA, Ip = 5.0 MA Veetsat Base to Emitter Saturation 1.0 1.0 Vv Ic =10 mA, lp = 1.0 MA Voltage (Note 5) 4.2 1.0 Vv Ic = 50 mA, Ip = 5.0 MA Cop Output Capacitance 6.0 6.0 pF Vee = 10 V, le =0, f = 1.0 MHz Civ Input Capacitance (2N/FTSO5550) 30 pF Vee = 0.5 V, Ic =0, f =1.0 MHz (MPS/FTSO5551) 30 pF Vee = 0.5 V, Io =0, f =1.0 MHz (2N5551) 20 pF Vee =0.5V, Io =0, f =1.0MHz te Small Signal Current Gain 50 200 50 200 Ilo = 1.0 MA, Vee = 10 V, f = 1.0 kHz fr Current Gain Bandwidth 400 | 300 | 100 | 300 MHz | Ic = 10 mA, Vce = 10 V, Product f = 100 MHz NF Noise Figure 10 8.0 dB Io = 250 vA, Vee = 5.0 V, f = 10 Hz to 15.7 kHz, Rs = 1.0 kQ 3-334 ay DE J auesb74 OO27bLY i iee FAIRCHILD SEMICONDUCTOR BY DE 3449574 ooe7E1s 3 3469674 FAIRCHILD SEMICONDUCTOR 84D 27615 D , Se 7 . EAIRCHILD 2N5679/2N5680 7-%2-7 2N5681/2N5682 1 33-17 1.0 Amp 10 Watt NPN-PNP Complementary Power A Schiumberger Company e f;... 30 MHz @ Ic = 100 mA PACKAGE Vesa -.- O06V@Ic=0.25A 2N5679 TO-39 Complements ... 2N5679, PNP (2N5681, NPN); 2N5680 TO-39 2N5680, PNP (2N5682, NPN) 2N5681 TO-39 i 2N5682. TO-39 } ABSOLUTE MAXIMUM RATINGS (Note 1} Temperatures Storage Temperature -65 C to 200C Operating Junction Temperature 200 C Power Dissipation (Notes 2 & 3) Continuous Dissipation at 25C Ambient Temperature 10W Continuous Dissipation at 25C Case Temperature 10 W Voltages & Currents (Note 4) 5679 5680 Vceo Collector to Emitter Voltage 100 V -120 V Vcreo Collector to Base Voltage 100 V 120 V Veso Emitter to Base Voltage -4.0V -~4.0V Ico Collector Current 10A 1.0A Is Base Current 0O.5A O5A Voltages & Currents (Note 4) 5681 5682 Vceo Collector to Emitter Voltage 100 V 120 V Vcpo Collector to Base Voltage 100 V 120 V Veso Emitter to Base Voltage 4.0V 4.0V Io Collector Current 1.0A 1.0A le Base Current O5A O5A ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 5679 5680 SYMBOL CHARACTERISTIC MIN MAX {| MIN MAX | UNITS TEST CONDITIONS leno Emitter Cutoff Current 1.0 1.0 LA Ves = 4.0 V, Ic = 0 IcBo Collector Cutoff Current 4.0 pA Ves =100 V, le = 0 1.0 pA Vee = 120 V, le =O NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200 C and junction-to-case thermat resistance of 0 2 C/W (derating factor of 0.057 mW/? C); junction-to-ambient thermal resistance of 0 02 C/W (derating factor of 0 0057 mW/C). 4. Rating refers to a high current point where collector to emitter voltage Is lowest. 5. Pulse conditions: length = 300 us; duty cycle = 2%. 6. For product family characteristic curves, refer to Curve Set 1415 (2NS679 and 2N5680) and Curve Set T315 (2N5681 and 2N5782) el 3-335 renee me me sepa 7FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR ay DE syesn74 oo027blb 5 I 84D 27616 2N5679/2N5680 2N5681/2N5682 D734 3-07 fo yy 33-1) ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 5679 5680 SYMBOL | CHARACTERISTIC MIN MAX} MIN MAX | UNITS TEST CONDITIONS Iceo Collector Cutoff Current 10 BA Vea = 70 V, Is =0 10 pA Vos = 80 V, lp =O Icex Collector Reverse Current 1.0 mA | Vce =100 V, Vaz = 1.5 V, (Note 3) Tc = 150C 1.0 mA Vee = 120 V, Vee = 1.5 V, : Te = 150C 1.0 BA | Vce = -100 V, Vee = -1.5 V 1.0 LA Voce = 120 V, Vee = -1.5 V Nre DC Current Gain (Note 5) 5.0 5.0 le = 1.0 A, Voce = -2.0 V 40 150 40 150 lc = 250 mA, Vce = -2.0 V Vceorsus) | Collector to Emitter Sustaining | -100 ~120 Vv lc = 10 mA, Ip = 0 Voltage (Note 5) Veetsan Collector to Emitter Saturation 2.0 ~-2.0 Vv lc = 1.0 mA, Is = 200 mA Voltage (Note 5) -1.0 -1.0 Vv le = 500 mA, le = 50 mA -0.6 -0.6 v Ic = 250 mA, Ip = 25 mA Veeton Base to Emitter On Voltage -1.0 1.0 Vv lc = 250 MA, Vee = 2.0 V (Note 5) Cop Common Base Output 50 50 pF Vee = 20 mA, le =0 Capacitance f = 1.0 MHz Nte High Frequency Current Gain | 3.0 3.0 le = 100 mA, Vce = 10 V, f = 10 MHz Ne Small Signal Current Gain 40 40 le = 200 mA, Vee = 1.5 V, f = 1.0 kHzFAIRCHILD SEMICONDUCTOR By DEB suedn74 OOe?7bl? 7 3469674 FAIRCHILD SEMICONDUCTOR 84D 27617 DJ 33-07 oF 2N5679/2N5680 TAB-17 2N5681/2N5682 5681 5682 SYMBOL | CHARACTERISTIC MIN MAX: MIN MAX | UNITS TEST CONDITIONS lego Emitter Cutoff Current 1.0 1.0 BA Ves = 4.0 V, Ic =0 leso Collector Cutoff Current 1.0 pA | Vee = 100 V, le =0 1.0 pA Vee = 120 V, le = 0 Iceo Collector Cutoff Current 10 pA | Vce = 70 V, lp =0 10 pA Ves = 80 V, lp = 0 loex Collector Cutoff Current 1.0 MA | Vce = 100 V, Vee = 1.5 V, = To = 150C ce 1.0 mA | Vce = 120 V, Vee = 1.5 V, _ Tc = 150C 1.0 pA | Voce = 100 V, Vez = 1.5 V 1.0 uA Vee = 120 V, Vee = 1.5 V hee DC Current Gain (Note 5) 5.0 5.0 Io = 1.0 A, Vee = 2.0 V 40 150 40 150 Io = 250 MA, Voce = 2.0 V Veeotsus | Collector to Emitter Sustaining} 100 120 Vv lo = 10 mA, lp =O Voltage (Note 5) Veetsat Collector to Emitter Saturation 2.0 2.0 Vv Io = 1.0 mA, lp = 200 mA Voltage (Note 5) 1.0 1.0 Vv Ie = 500 mA, Is = 50 mA 0.6 0.6 Vv Ic = 250 mA, la = 25 MA Veen Base to Emitter On 1.0 1.0 Vv Ic = 250 mA, Vee = 2.0 V Voltage (Note 2) Con Output Capacitance 50 50 pF Vos = 20 mA, le =0 f = 1.0 MHz Nite High Frequency Current Gain | 3.0 3.0 Ic = 100 mA, Vce = 10 V, f= 10 MHz Ne Small Signal Current Gain 40 40 lo = 200 mA, Vce = 1.5 V, f= 1.0 kHz om aa