VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-01 Dez 12 Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1) Parameter Symbol Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Unit VRRM 1200 V IF 100 A 200 A Limited by Tvjmax 175 Tvj(op) -40 150 typ max C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter 2) Symbol Conditions Continuous forward voltage VF IF = 100 A Continuous reverse current IR VR = 1200 V Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) min Tvj Junction temperature 1) max IFRM Conditions Erec IF = 100 A, VR = 600 V, di/dt = 2100 A/s, L = 60 nH, Inductive load, Switch: 1x 5SMY 12K1280 min Unit Tvj = 25 C 1.8 V Tvj = 125 C 1.85 V Tvj = 25 C 100 A Tvj = 125 C 1 mA Tvj = 25 C 83 A Tvj = 125 C 110 A Tvj = 25 C 13 C Tvj = 125 C 25 C Tvj = 25 C 250 ns Tvj = 125 C 380 ns Tvj = 25 C 4.8 mJ Tvj = 125 C 10 mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLY 12G1200 200 150 15 Vcc = 600 V di/dt = 2100 A/s Tvj = 125 C Ls = 60 nH 150 Erec 100 Erec [mJ] 10 Irr [A], Qrr [C] IF [A] 100 Irr 50 5 125 C 50 25 C Qrr 0 0.0 0.5 1.0 1.5 2.0 0 2.5 VF [V] Fig. 1 0 0 100 200 IF [A] Typical diode forward characteristics 200 Fig. 2 Typical reverse recovery characteristics vs. forward current 12 Erec VCC = 600 V IF = 100 A Tvj = 125 C L = 60 nH 150 300 VCC 1000 V Tvj(op) = 150 C L = 60 nH 200 9 6 50 3 Irr IR [A] 100 Erec [mJ] Irr [A], Qrr [C] 150 100 50 Qrr 0 0 0 0 1000 2000 0 3000 Typical reverse recovery vs. di/dt 400 600 800 1000 1200 VR [V] di/dt [A/s] Fig. 3 200 Fig. 4 Safe operating area (FBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1683-01 Dez 12 page 2 of 3 5SLY 12G1200 Mechanical properties Parameter Unit Dimensions Metallization 3) 3) Overall die L x W 8.4 x 8.4 mm exposed LxW front metal 6.7 x 6.7 mm thickness 350 15 m 4 m 1.2 m front (A) AlSi1 back (K) Al / Ti / Ni / Ag For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. =6.68= =8.360.05= Outline Drawing =6.68= =8.360.05= Note : All dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. Related documents: 5SYA 2045 Thermal runaway during blocking 5SYA 2059 Applying IGBT and Diode dies 5SYA 2093-00 Thermal design of IGBT Modules We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilisation of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is exclude ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1683-01 Dez 12