2SK1822-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15 Applications 2.54 Motor controllers General purpose power amplifier 3. Source DC-DC converters JEDEC EIAJ SC-67 Equivalent circuit schematic Maximum ratings and characteristics Absolute maximum ratings ( Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 60 20 80 20 20 35 +150 -55 to +150 Unit V A A A V W C C Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance IGSS RDS(on) Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time gfs Ciss Coss Crss td(on) tr td(off) tf V SD t rr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V VGS=0V Min. 60 1.0 Typ. 1.5 Tch=25C Tch=125C VGS=16V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS =25V VGS=0V f=1MHz VCC=30V RG=25 ID=20A VGS=10V 6.0 IF=2xIDR VGS=0V Tch=25C IF=IDR di/dt=100A/s Tch=25C Max. 2.0 500 1.0 10 110 70 Units V V A mA A 90 55 12.0 600 260 150 7 30 100 70 1.45 90 900 390 240 11 45 150 110 2.18 130 Typ. Max. Units 62.5 3.57 C/W C/W m S pF ns V ns Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. 1 2SK1822-01MR FUJI POWER MOSFET Characteristics Typical output characteristics On state resistance vs. Tch 40 150 30 100 ID [ A ] 20 RDS(on) [ m ] 50 10 0 0 0 5 10 15 -50 0 50 VDS [ V ] 100 150 Tch [ C ] Typical Drain-Source on state resistance vs. ID Typical transfer characteristics 400 40 300 30 RDS(on) [ m ] 200 ID 20 [A] 100 10 0 0 0 5 VGS 10 [V] 15 0 10 20 30 40 50 ID [ A ] Gate threshold voltage vs. Tch Typical forward transconductance vs. ID 15 3.0 10 2.0 gfs [S] VGS(th) [V] 5 1.0 0 0 0 10 ID 20 [A] 30 40 -50 0 50 100 150 Tch [ C ] 2 2SK1822-01MR FUJI POWER MOSFET Typical input charge Typical capacitance vs. VDS 10 50 25 40 20 VDS 30 [V] 15 20 10 10 5 5 1 C [nF] VGS [V] 0.5 0.1 0.05 0 0 10 20 30 0 20 40 60 80 VDS [ V ] Qg [ nC ] Forward characteristics of reverse diode Allowable power dissipation vs. Tc 100 100 0 40 50 30 IF 10 [A] PD 20 [W] 5 10 1 0 0.8 1.6 0 2.4 0 50 VSD [ V ] 100 150 Tc [ C ] Safe operating area 100 50 Transient thermal impedance 10 ID [A] 5 100 Rth [C/W] 10-1 1 0.5 10-2 10-5 10-4 10-3 10-2 t [ sec. ] 10-1 100 101 0.5 1 5 10 VDS [ V ] 50 100 3