1
Item Symbol Rating Unit
Drain-source voltage V DS 60
Continuous drain current ID20
Pulsed drain current ID(puls] 80
Continuous reverse drain current IDR 20
Gate-source peak voltage VGS ±20
Max. power dissipation PD35
Operating and storage Tch +150
temperature range Tstg
2SK1822-01MR FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
V
A
A
A
V
W
°C
°C
-55 to +150
JEDEC
EIAJ
Outline Drawings
FAP-IIIA SERIES
Features
High current
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Including G-S Zener diode
Applications
Motor controllers
General purpose power amplifier
DC-DC converters
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
Min. Typ. Max. Units
V
V
µA
mA
µA
mΩ
S
pF
ns
V
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-a) channel to ambient
Rth(ch-c) channel to case 62.5
3.57 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Diode forward on-voltage
Reverse recovery time
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=60V VGS=0V Tch=25°C
Tch=125°C
VGS=±16V VDS=0V
ID=10A VGS=4V
ID=10A VGS=10V
ID=10A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=25 Ω
ID=20A
VGS=10V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR di/dt=100A/µs Tch=25°C
60
1.0 1.5 2.0
500
1.0
10
90 110
55 70
6.0 12.0
600 900
260 390
150 240
711
30 45
100 150
70 110
1.45 2.18
90 130
SC-67
TO-220F15
3. Source
2.54
Gate(G)
Source(S)
Drain(D)
2
Characteristics
2SK1822-01MR
FUJI POWER MOSFET
Typical output characteristics
VDS [ V ]
ID
[ A ]
On state resistance vs. Tch
RDS(on)
[ mΩ ]
Tch [ °C ]
Typical transfer characteristics
VGS [ V ]
ID
[ A ]
Typical Drain-Source on state resistance vs. ID
ID [ A ]
RDS(on)
[ mΩ ]
Typical forward transconductance vs. ID
ID [ A ]
gfs
[ S ]
Gate threshold voltage vs. Tch
Tch [ °C ]
VGS(th)
[ V ]
0 5 10 15
0 10 20 30 40 50
3.0
2.0
1.0
0
15
10
5
0
40
30
20
10
0 -50 0 50 100 150
150
100
50
0
40
30
20
10
0 0 5 10 15
400
300
200
100
0
0 10 20 30 40 -50 0 50 100 150
3
FUJI POWER MOSFET
Typical capacitance vs. VDS
VDS [ V ]
C
[nF]
Forward characteristics of reverse diode
0 0.8 1.6 2.4
VSD [ V ]
IF
[ A ]
Allowable power dissipation vs. Tc
Tc [ °C ]
PD
[ W ]
Transient thermal impedance
t [ sec. ]
Rth
[°C/W]
Safe operating area
ID
[ A ]
VDS [ V ]
10-5 10-4 10-3 10-2 10-1 100 101
100
50
10
5
1
0.5
0 50 100 150
100
50
10
5
1
2SK1822-01MR
Typical input charge
VDS
[ V ]
Qg [ nC ]
VGS
[ V ]
25
20
15
10
5
0
10
5
1
0.5
0.1
0.05
0 10 20 30 0 20 40 60 80 100
50
40
30
20
10
0
40
30
20
10
0
100
10-1
10-2
0.5 1 5 10 50 100
