MBR3030PT – MBR3050PT
Document number: DS23017 Rev. 9 - 4
1 of 4
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July 2015
© Diodes Incorporated
MBR3030PT – MBR3060PT
OBSOL ETE – PA RT DI S CONT INU E D
30A SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Mechanical Data
Case: TO-3P
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Tin. Plated Leads Solderable per MIL-STD-
202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 5.6 grams (Approximate)
Ordering Information (Note 3)
Part Number
Packaging
MBR3030PT
30/Tube
MBR3035PT
30/Tube
MBR3040PT
30/Tube
MBR3045PT
30/Tube
MBR3050PT
30/Tube
MBR3060PT
30/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
Maximum Ratings and Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
3030PT
MBR
3035PT
MBR
3040PT
MBR
3045PT
MBR
3050PT
MBR
3050PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
V
RMS Reverse Voltage
VR(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current @ TC = 125°C
Total Device (See Fig. 7)
IO
30
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
200
A
Forward Voltage Drop @ IF = 20A, TC = +25°C
per element (Note 6) @ IF = 20A, TC =+125°C
@ IF = 30A, TC = +25°C
@ IF = 30A, TC =+125°C
VFM
0.60
0.76
0.72
0.75
0.65
0.80
0.75
V
Peak Reverse Current @ TC = +25°C
at Rated DC Blocking Voltage, per element @ TC = +125°C
IRM
1.0
60
5.0
100
mA
Typical Total Capacitance (Note 5)
CT
500
pF
Typical Thermal Resistance Junction to Case (Note 4)
RJc
1.4
°C/W
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/µs
Operating Temperature Range
Tj
-65 to +150
°C
Storage Temperature Range
TSTG
-65 to +175
°C
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. Pulse width 300 µs, duty cycle 2%.
7. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied. See EU Directive Annex Notes 5 and 7.
Pb
Obsolete, Discontinued
MBR3030PT – MBR3050PT
Document number: DS23017 Rev. 9 - 4
2 of 4
www.diodes.com
July 2015
© Diodes Incorporated
MBR3030PT – MBR3060PT
OBSOL ETE – PA RT DI S CONT INU E D
050 100 150
I , AVERAGE FORWARD CURRENT (A)
O
T , CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve, total device
C
0
6
12
18
24
30
0.1
1.0
10
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS F0RWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, per element
F
100
0 0.2 0.4
MBR 3030PT - MBR 3045PT
MBR 3050PT - MBR 3060PT
0.6 0.8
T = 25°C
j
2% duty cycle
0
50
100
150
200
250
300
110 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
T = 25°C
j
8.3ms Single half-wave
100
1,000
4,000
0.1 1.0 10 100
C , CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
R
T = 25°C
f = 1MHz
j
MBR3030PT – MBR3050PT
Document number: DS23017 Rev. 9 - 4
3 of 4
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July 2015
© Diodes Incorporated
MBR3030PT – MBR3060PT
OBSOL ETE – PA RT DI S CONT INU E D
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
0.01
0.1
1.0
10
020 40 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics, per element
100
TO-3P
Dim
Min
Max
A
1.88
2.08
B
4.68
5.36
C
20.63
22.38
D
18.5
21.5
E
2.10
2.40
G
0.51
0.76
H
15.38
16.25
J
1.90
2.70
K
2.9
3.65
L
3.78
4.50
M
5.20
5.70
N
0.89
1.53
P
1.82
2.46
Q
2.92
3.23
R
11.70
12.84
S
6.10
All Dimensions in mm
A
B
E
G
J
L
M
N
PQ
K
S
M
H
R
D
C
MBR3030PT – MBR3050PT
Document number: DS23017 Rev. 9 - 4
4 of 4
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July 2015
© Diodes Incorporated
MBR3030PT – MBR3060PT
OBSOL ETE – PA RT DI S CONT INU E D
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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