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Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DESCRIPTION
The
µ
PG2158T5K is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed
for mobile phone and another L, S-band application.
This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
0.05 to 3.0 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) package. And this
package is able to high-density surface mounting.
FEATURES
• Switch control voltage : Vcont (H) = 1.8 to 5.3 V (2.7 V TYP.)
: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
• Low insertion loss : LINS1 = 0.40 dB TYP. @ f = 0.05 to 1.0 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
: LINS2 = 0.45 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
: LINS3 = 0.47 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
: LINS4 = 0.53 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
• High isolation : ISL1 = 27 dB TYP. @ f = 0.05 to 1.0 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
: ISL2 = 19 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
: ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
: ISL4 = 17 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
• Handling power : Pin (0.1 dB) = +29.0 dBm TYP. @ f = 2.0/2.5 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
: Pin (1 dB) = +30.5 dBm TYP. @ f = 2.0/2.5 GHz, Vcont (H) = 2.7 V, Vcont (L) = 0 V
• High-density surface mounting : 6-pin plastic TSSON package (1.0 × 1.0 × 0.37 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
• W-LAN, WLL and BluetoothTM etc.
ORDERING INFORMATION
Part Number Order Number Package Marking Supplying Form
µ
PG2158T5K-E2
µ
PG2158T5K-E2-A 6-pin plastic TSSON
(Pb-Free) Note
G2 • Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2158T5K
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
L, S-BAND SPDT SWITCH
GaAs INTEGRATED CIRCUIT
µ
PG2158T5K
Document No. PG10578EJ02V0DS (2nd edition)
Date Published December 2005 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2005
The mark shows major revised points.
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No. Pin Name
1 OUTPUT1
2 GND
3 OUTPUT2
4 Vcont2
5 INPUT
(Top View) (Bottom View)
1
2
3
4
5
6
1
2
34
5
6
1
2
34
5
6
(Top View)
G2
6 Vcont1
TRUTH TABLE
Vcont1 Vcont2 INPUT−OUTPUT1 INPUT−OUTPUT2
Low High OFF ON
High Low ON OFF
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Switch Control Voltage Vcont +6.0 Note V
Input Power Pin +31 dBm
Operating Ambient Temperature TA −45 to +85 °C
Storage Temperature Tstg −55 to +150 °C
Note Vcont1 − Vcont2 ≤ 6.0 V
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter Symbol MIN. TYP. MAX. Unit
Switch Control Voltage (H) Vcont (H) 1.8 2.7 5.3 V
Switch Control Voltage (L) Vcont (L) −0.2 0 +0.2 V
Data Sheet PG10578EJ02V0DS
2
µ
PG2158T5K
ELECTRICAL CHARACTERISTICS 1
(TA = +25°C, Vcont (H) = 2.7 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Insertion Loss 1 LINS1 f = 0.05 to 1.0 GHz Note 1 − 0.40 0.45
Insertion Loss 2 LINS2 f = 1.0 to 2.0 GHz − 0.45 0.50
Insertion Loss 3 LINS3 f = 2.0 to 2.5 GHz − 0.47 0.55
Insertion Loss 4 LINS4 f = 2.5 to 3.0 GHz − 0.53 0.60
dB
Isolation 1 ISL1 f = 0.05 to 1.0 GHz Note 1 23 27
−
Isolation 2 ISL2 f = 1.0 to 2.0 GHz 16 19 −
Isolation 3 ISL3 f = 2.0 to 2.5 GHz 14 17 −
Isolation 4 ISL4 f = 2.5 to 3.0 GHz 14 17 −
dB
Input Return Loss RLin f = 0.05 to 3.0 GHz Note 1 15 20
− dB
Output Return Loss RLout f = 0.05 to 3.0 GHz Note 1 15 20
− dB
Pin (0.1 dB) f = 2.0/2.5 GHz +26.0 +29.0 −
0.1 dB Loss Compression
Input Power Note 2 f = 0.5 to 3.0 GHz − +29.0 −
dBm
1 dB Loss Compression
Input Power Note 3
Pin (1 dB) f = 0.5 to 3.0 GHz − +30.5 − dBm
2nd Harmonics 2f0 f = 2.0/2.5 GHz, Pin = +20 dBm 65 75 − dBc
3rd Harmonics 3f0 f = 2.0/2.5 GHz, Pin = +20 dBm 65 75 − dBc
Input 3rd Order Distortion
Intercept Point
IIP3 f = 0.5 to 3.0 GHz
2 tone 5 MHz spacing
− +60 − dBm
Switch Control Current Icont No signal − 0.2 20
µ
A
Switch Control Speed tSW 50% CTL to 90/10% RF − 50 500 ns
Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz
2. P
in (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of
linear range.
3. P
in (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors.
The value of DC cut capacitors should be chosen to accommodate the frequency of operation,
bandwidth, switching speed and the condition with actual board of your system. The range of
recommended DC cut capacitor value is less than 100 pF.
Data Sheet PG10578EJ02V0DS 3
µ
PG2158T5K
ELECTRICAL CHARACTERISTICS 2
(TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Insertion Loss 1 LINS1 f = 0.05 to 1.0 GHz Note 1 − 0.40 0.47
Insertion Loss 2 LINS2 f = 1.0 to 2.0 GHz − 0.46 0.52
Insertion Loss 3 LINS3 f = 2.0 to 2.5 GHz − 0.48 0.57
Insertion Loss 4 LINS4 f = 2.5 to 3.0 GHz − 0.54 0.62
dB
Isolation 1 ISL1 f = 0.05 to 1.0 GHz Note 1 23 27
−
Isolation 2 ISL2 f = 1.0 to 2.0 GHz 16 19 −
Isolation 3 ISL3 f = 2.0 to 2.5 GHz 14 17 −
Isolation 4 ISL4 f = 2.5 to 3.0 GHz 14 17 −
dB
Input Return Loss RLin f = 0.05 to 3.0 GHz Note 1 15 20
− dB
Output Return Loss RLout f = 0.05 to 3.0 GHz Note 1 15 20
− dB
Pin (0.1 dB) f = 2.0/2.5 GHz +19.0 +22.0 −
0.1 dB Loss Compression
Input Power Note 2 f = 0.5 to 3.0 GHz − +22.0 −
dBm
1 dB Loss Compression
Input Power Note 3
Pin (1 dB) f = 0.5 to 3.0 GHz − +25.0 − dBm
Switch Control Current Icont No signal − 0.2 20
µ
A
Switch Control Speed tSW 50% CTL to 90/10% RF − 50 500 ns
Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz
2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of
linear range.
3. P
in (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors.
The value of DC cut capacitors should be chosen to accommodate the frequency of operation,
bandwidth, switching speed and the condition with actual board of your system. The range of
recommended DC cut capacitor value is less than 100 pF.
Data Sheet PG10578EJ02V0DS
4
µ
PG2158T5K
EVALUATION CIRCUIT
OUTPUT1 OUTPUT2
GND
C
0
C
0
V
cont
1 INPUT
1 000 pF 1 000 pF
C
0
V
cont
2
12
56
3
4
Remark C
0 : 0.05 to 0.5 GHz 1 000 pF
: 0.5 to 3.0 GHz 56 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PG10578EJ02V0DS 5
µ
PG2158T5K
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
C1
C4
C2
C3
C5
V
cont
2
OUTPUT2
INPUT
OUTPUT1
V
cont
1
G2
USING THE NEC EVALUATION BOARD
Symbol Values
C1, C2, C3 56 pF
C4, C5 1 000 pF
Data Sheet PG10578EJ02V0DS
6
µ
PG2158T5K
TYPICAL CHARACTERISTICS (TA = +25°C, Vcont (H) = 2.7 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF,
using test fixture, unless otherwise specified)
1.7 3.51.1 2.3 2.90.5
2.0
2.5
1.0
0.5
0
–1.0
–2.0
–2.5
1.5
–0.5
–1.5
2
1
345
1:
–
0.380 dB
1.0 GHz
2:
–
0.411 dB
1.5 GHz
3:
–
0.442 dB
2.0 GHz
4:
–
0.468 dB
2.5 GHz
5:
–
0.513 dB
3.0 GHz
1.7 3.50.5 1.1 2.3 2.9
1:
–
0.380 dB
1.0 GHz
2:
–
0.413 dB
1.5 GHz
3:
–
0.446 dB
2.0 GHz
4:
–
0.468 dB
2.5 GHz
5:
–
0.511 dB
3.0 GHz
2
1
345
1.7 3.51.1 2.3 2.90.5
40
50
20
10
0
–20
–40
–50
30
–10
–30
1:
–
27.327 dB
1.0 GHz
2:
–
23.924 dB
1.5 GHz
3:
–
21.519 dB
2.0 GHz
4:
–
19.691 dB
2.5 GHz
5:
–
18.176 dB
3.0 GHz
2
1
345
1.7 3.5
1.1 2.3 2.9
0.5
40
50
20
10
0
–20
–40
–50
30
–10
–30
1:
–
27.239 dB
1.0 GHz
2:
–
23.849 dB
1.5 GHz
3:
–
21.47 dB
2.0 GHz
4:
–
19.834 dB
2.5 GHz
5:
–
18.109 dB
3.0 GHz
2
1
45
3
1.7 3.5
1.1 2.3 2.9
0.5
40
50
20
10
0
–20
–40
–50
30
–10
–30 2
1
345
1:
–
24.828 dB
1.0 GHz
2:
–
27.749 dB
1.5 GHz
3:
–
29.57 dB
2.0 GHz
4:
–
29.588 dB
2.5 GHz
5:
–
27.86 dB
3.0 GHz
1.7 3.5
1.1 2.3 2.9
0.5
40
50
20
10
0
–20
–40
–50
30
–10
–30
1:
–
25.098 dB
1.0 GHz
2:
–
27.928 dB
1.5 GHz
3:
–
28.894 dB
2.0 GHz
4:
–
28.293 dB
2.5 GHz
5:
–
26.879 dB
3.0 GHz
2
1
345
2.0
2.5
1.0
0.5
0
–1.0
–2.0
–2.5
1.5
–0.5
–1.5
Insertion Loss L
INS
(dB)
Frequency f (GHz)
INPUT-OUTPUT1
INSERTION LOSS vs. FREQUENCY
Insertion Loss L
INS
(dB)
Frequency f (GHz)
INPUT-OUTPUT2
INSERTION LOSS vs. FREQUENCY
Isolation ISL (dB)
Frequency f (GHz)
INPUT-OUTPUT1
ISOLATION vs. FREQUENCY
Isolation ISL (dB)
Frequency f (GHz)
INPUT-OUTPUT2
ISOLATION vs. FREQUENCY
Input Return Loss RL
in
(dB)
Frequency f (GHz)
INPUT-OUTPUT1
INPUT RETURN LOSS vs. FREQUENCY
Input Return Loss RL
in
(dB)
Frequency f (GHz)
INPUT-OUTPUT2
INPUT RETURN LOSS vs. FREQUENCY
Remark The graphs indicate nominal characteristics.
Data Sheet PG10578EJ02V0DS 7
µ
PG2158T5K
1.7 3.5
1.1 2.3 2.9
0.5
40
50
20
10
0
–20
–40
–50
30
–10
–30 2
1
345
1:
–
24.907 dB
1.0 GHz
2:
–
27.235 dB
1.5 GHz
3:
–
27.784 dB
2.0 GHz
4:
–
26.52 dB
2.5 GHz
5:
–
24.38 dB
3.0 GHz
1.7 3.5
0.5 1.1 2.3 2.9
40
50
20
10
0
–20
–40
–50
30
–10
–30
1:
–
25.825 dB
1.0 GHz
2:
–
28.812 dB
1.5 GHz
3:
–
28.916 dB
2.0 GHz
4:
–
26.585 dB
2.5 GHz
5:
–
23.762 dB
3.0 GHz
2
1
345
+20 +32 +36+12 +16 +24 +28+8
+35
+30
+25
+20
+15
+10
+5
f = 2.0 GHz
Output Return Loss RLout (dB)
Frequency f (GHz)
INPUT-OUTPUT1
OUTPUT RETURN LOSS vs. FREQUENCY
Output Return Loss RLout (dB)
Frequency f (GHz)
INPUT-OUTPUT2
OUTPUT RETURN LOSS vs. FREQUENCY
Output Power Pout (dBm)
Input Power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
Remark The graphs indicate nominal characteristics.
Data Sheet PG10578EJ02V0DS
8
µ
PG2158T5K
PACKAGE DIMENSIONS
6-PIN PLASTIC TSSON (UNIT: mm)
1.0±0.1
0.35±0.060.35±0.06
0.45 ±0.1
0.13±0.07
0.15
+0.07
–0.05
0.23±0.07
0.175±0.075
(Bottom View)
(Top View)
1.0±0.1
1.0±0.1
1.0±0.1
0.37
+0.03
–0.05
0.15
+0.07
–0.05
Data Sheet PG10578EJ02V0DS 9
µ
PG2158T5K
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10578EJ02V0DS
10
µ
PG2158T5K
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
M8E 00. 4 - 0110
The information in this document is current as of December, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
Data Sheet PG10578EJ02V0DS 11
µ
PG2158T5K
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0504
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
For further information, please contact
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