FGA180N33ATDTU - Fairchild Semiconductor

FGA180N33ATD Rev. A

FGA180N33ATD 330V, 180A PDP Trench IGBT

April 2008

Absolute Maximum Ratings

Notes:

1: Repetitive test, pulse width = 100usec, Duty = 0.1

* IC_pulse limited by max Tj

Thermal Characteristics

Symbol Description Ratings Units

VCES Collector to Emitter Voltage 330 V

VGES Gate to Emitter Voltage ± 30 V

ICCollector Current @ TC = 25oC180 A

IC pulse (1) Pulsed Collector Current @ TC = 25oC450 A

PDMaximum Power Dissipation @ TC = 25oC390 W

Maximum Power Dissipation @ TC = 100oC156 W

TJ Operating Junction Temperature -55 to +150 oC

Tstg Storage Temperature Range -55 to +150 oC

TLMaximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds 300 oC

Symbol Parameter Typ. Max. Units

RθJC(IGBT) Thermal Resistance, Junction to Case -0.32 oC/W

RθJC(Diode) Thermal Resistance, Junction to Case -0.82 oC/W

RθJA Thermal Resistance, Junction to Ambient -40 oC/W

GECTO-3P

FGA180N33ATD

330V, 180A PDP Trench IGBT

Features

• High Current Capability

• Low saturation voltage: VCE(sat) =1.03V @ IC = 40A

• High input impedance

• RoHS compliant

Applications

• PDP SYSTEM

General Description

Using Novel Trench IGBT Technology, Fairchild’s new series of

trench IGBTs offer the optimum performance for PDP applica-

tions where low conduction and switching losses are essential.

2www.fairchildsemi.comFGA180N33ATD Rev. A

FGA180N33ATD 330V, 180A PDP Trench IGBT

Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Device Marking Device Package

Packaging

Type Qty per Tube Max Qty per

Box

FGA180N33ATD FGA180N33ATDTU TO-3P Tube 30ea -

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 400µA330 - - V

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 400 µA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE 2.5 4.0 5.5 V

VCE(sat) Collector to Emitter Saturation Voltage

IC = 40A, VGE = 15V -1.1 1.4 V

IC = 180A, VGE = 15V, -1.68 - V

IC = 180A, VGE = 15V

TC = 125oC-1.89 V

Dynamic Characteristics

Cies Input Capacitance VCE = 30V, VGE = 0V,

f = 1MHz

-3880 -pF

Coes Output Capacitance -305 -pF

Cres Reverse Transfer Capacitance -180 -pF

Switching Characteristics

td(on) Turn-On Delay Time VCC = 200V, IC = 40A,

RG = 5Ω, VGE = 15V,

Resistive Load, TC = 25oC

-27 -ns

trRise Time -80 -ns

td(off) Turn-Off Delay Time -108 -ns

tfFall Time -180 240 ns

td(on) Turn-On Delay Time VCC = 200V, IC = 40A,

RG = 5Ω, VGE = 15V,

Resistive Load, TC = 125oC

-26 -ns

trRise Time -75 -ns

td(off) Turn-Off Delay Time -112 -ns

tfFall Time -250 300 ns

QgTotal Gate Charge VCE = 200V, IC = 40A,

VGE = 15V

-169 -nC

Qge Gate to Emitter Charge -22 -nC

Qgc Gate to Collector Charge -69 -nC

3www.fairchildsemi.comFGA180N33ATD Rev. A

FGA180N33ATD 330V, 180A PDP Trench IGBT

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

VFM Diode Forward Voltage IF = 20A TC = 25oC - 1.21.6V

TC = 125oC - 1.04 -

trr Diode Reverse Recovery Time

IF = 20A

dI/dt = 200A/µs

TC = 25oC - 27 - ns

TC = 125oC - 39 -

Irr Diode Peak Reverse Recovery Cyrrent TC = 25oC - 3.5 -A

TC = 125oC - 6.0 -

Qrr Diode Reverse Recovery Charge TC = 25oC - 48 -µC

TC = 125oC - 117 -

4www.fairchildsemi.comFGA180N33ATD Rev. A

FGA180N33ATD 330V, 180A PDP Trench IGBT

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE

Temperature at Variant Current Level

0246

100

150

200

20V

15V

10V

12V

TC = 25oC

9V 8V

VGE = 6V

Collector Current , IC [A]

Collector-Emitter Voltage, VCE [V] 0246

100

150

200

9V 8V

10V

20V

TC = 125oC

15V

12V

VGE = 6V

Collector Current , IC [A]

Co lle c tor-Em itt e r V oltage, VCE [V]

0123

100

150

200 Common E m itter

VGE = 15V

TC = 25oC

TC = 125oC

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V] 246810

100

150

200 Common Emitter

VCE = 20V

TC = 25oC

TC = 125oC

Collector Current, IC [A]

Gate-Emitter Voltage,VGE [V]

25 50 75 100 125 150

0.6

0.9

1.2

1.5

1.8

2.1

180A

90A

40A

IC = 20A

Comm on E m itter

VGE = 15V

Collector-Emitter Voltage, VCE [V]

Collector-EmitterCase Tem perature, TC [oC]0 4 8 12 16 20

180A

IC = 20A

40A 90A

Common Emitter

TC = 25oC

Collector-Emitter Voltage, VCE [V]

Gate -E m itte r V o ltage , V GE [V]

5www.fairchildsemi.comFGA180N33ATD Rev. A

FGA180N33ATD 330V, 180A PDP Trench IGBT

Typical Performance Characteristics

Figure 7. Saturatio n Voltage vs. VGE Figure 8. Capacitance Characteristics

Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics

Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.

110

2000

4000

6000 Co m mon Emitter

VGE = 0V, f = 1MHz

TC = 25oC

Cres

Coes

Cies

Capacitance [pF]

Collector-Emitter Voltage, VCE [V] 30

0 4 8 121620

180A

IC = 20A

40A 90A

Comm on E m itter

TC = 125oC

Collector-Emitter Vo ltage, VCE [V]

Gate-Emitter Voltage, VGE [V]

0 30 60 90 120 150 180

15 Comm on Em itter

TC = 25oC

200V

VCC = 100V

Gate-Emitter Voltage, VGE [V]

Ga te Charge , Qg [nC] 1 10 100 1000

0.1

100

1000

DC Operation

IC MAX (Continuous)

IC MAX (Pulse)

1ms

10ms

*Notes:

1. T C = 25oC

2. T J = 150oC

3. S in g l e Pulse

10µs

100µs

Collect or Current, Ic [A]

Collector-Emitter Voltage, VCE [V]

0 20406080100

100

1000

5000

Common Emitter

VCC = 200V, VGE = 15V

IC = 40A

TC = 25oC

TC = 125oC td(off)

Switching Time [ns]

Gate Resistance, RG [Ω]

0 20406080100

100

Common Emitter

VCC = 2 00V , VGE = 15V

IC = 40A

TC = 25oC

TC = 125oC

td(on)

Switching Time [ns]

Gate Resistance, RG [Ω]

500

Gate Resist an c e Gate Resistance

6www.fairchildsemi.comFGA180N33ATD Rev. A

FGA180N33ATD 330V, 180A PDP Trench IGBT

Typical Performance Characteristics

Figure 13. Turn-on Charac teristics vs. Figure 14. Turn-off Characteristics vs.

Collector Current Collector Current

Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteris tic s

10 30 60 90 120 150 180

1000

Com mon Emitter

VGE = 15V, RG = 5Ω

TC = 25oC

TC = 125oC

td(off)

Switching Time [ns]

Collector Current, IC [A ]

100

10 30 60 90 120 150 180

100

1000

Common Emitter

VGE = 15V, R G = 5Ω

TC = 25oC

TC = 125oC

td(on)

Switch ing Time [ ns]

Collector Current, IC [A]

2000

110100400

100

500

Safe Operating Area

VGE = 15V, TC = 125oC

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V] 0.0 0.5 1.0 1.5 2.0 2.5

100

TJ = 25oC

TC = 25oC

TC = 125oC

TJ = 125oC

Forward Voltage, VF [V]

Forward Current, IF [A]

7www.fairchildsemi.comFGA180N33ATD Rev. A

FGA180N33ATD 330V, 180A PDP Trench IGBT

Typical Performance Characteristics

Figure 17. Reverse Recovery Current Figure 18. Stored Charge

Figure 19.Reverse Recovery Time

Figure 20.Transient Thermal Impedance of IGBT

5 10152025303540

200A/µs

di/dt = 100A/µs

Reverse Recovery Currnet, Irr [A]

Forward Current, IF [A] 5 10152025303540

200A/µs

di/dt = 1 0 0 A/µs

Stored Recovery Charge, Qrr [µC]

Forwa rd C u rre n t, IF [A]

5 10152025303540

200A/µs

di/dt = 100A/µs

Reverse Recovery Time, trr [ns]

Forwa rd C u rre n t, IF [A ]

1E-5 1E-4 1E-3 0.01 0.1 1

1E-3

0.01

0.1

0.01

0.02

0.1

0.05

0.2

sin gle pu lse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

0.5

PDM

8www.fairchildsemi.comFGA180N33ATD Rev. A

FGA180N33ATD 330V, 180A PDP Trench IGBT

Mechanical Dimensions

TO-3P

15.60 ±0.20

4.80 ±0.20

13.60 ±0.20

9.60 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20 1.40 ±0.20

ø3.20 ±0.10

3.80 ±0.20

13.90 ±0.20

3.50 ±0.20

16.50 ±0.30

12.76 ±0.20

19.90 ±0.20

23.40 ±0.20

18.70 ±0.20

1.50 +0.15

–0.05

0.60 +0.15



–0.05

5.45TYP

[5.45 ±0.30]

5.45TYP

[5.45 ±0.30]

Dimensions in Millimeters

FGA180N33ATD 330V, 180A PDP Trench IGBT

9www.fairchildsemi.comFGA180N33ATD Rev. A

Rev. I34

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Advance Information Formative or In Design This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

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changes at any time without notice to improve design.

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Fairchild Semiconductor. The datasheet is for reference information only.