BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector - Emitter Voltage VCEO 45 60 80 Vdc Collector - Base Voltage VCBO 45 60 80 Vdc Emitter - Base Voltage VEBO 5.0 COLLECTOR 2 Vdc Collector Current -- Continuous IC Total Device Dissipation @ TA = 25C Derate above 25C PD Total Device Dissipation @ TC = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg - 55 to +150 C Electrostatic Discharge ESD HBM>16000, MM>2000 V Max Unit 3 BASE Adc 0.5 mW mW/C 625 5.0 1 EMITTER Watt mW/C 1.5 12 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Ambient RqJA Thermal Resistance, Junction to Case RqJC TO-92 (TO-226AA) CASE 29 STYLE 14 C/W 200 Semiconductor Components Industries, LLC, 2000 February, 2000 - Rev. 2 3 C/W ORDERING INFORMATION 83.3 1 Device Package Shipping BC635RL1 TO-92 2000 Units/Tape & Reel BC635ZL1 TO-92 2000 Units/Ammo Pack BC637 TO-92 5000 Units/Box BC639 TO-92 5000 Units/Box BC639RL1 TO-92 2000 Units/Tape & Reel BC639ZL1 TO-92 2000 Units/Ammo Pack Publication Order Number: BC635/D BC635, BC637, BC639 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 45 60 80 -- -- -- -- -- -- 45 60 80 -- -- -- -- -- -- 5.0 -- -- Vdc -- -- -- -- 100 10 nAdc Adc 25 40 40 40 25 -- -- -- -- -- -- 250 160 160 -- OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CEO BC635 BC637 BC639 Vdc V(BR)CBO BC635 BC637 BC639 Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) Vdc ICBO ON CHARACTERISTICS(1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 (IC = 500 mA, VCE = 2.0 V) -- Collector - Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) -- -- 0.5 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) -- -- 1.0 Vdc fT -- 200 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 7.0 -- pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 50 -- pF DYNAMIC CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 BC635, BC637, BC639 500 1000 VCE = 2 V SOA = 1S 200 PD TA 25C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 500 100 50 PD TC 25C 20 10 5 1 BC635 BC637 BC639 PD TA 25C PD TC 25C 2 1 2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 50 20 100 1 3 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 2. DC Current Gain 500 1 300 V, VOLTAGE (VOLTS) 0.8 VCE = 2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 0 1000 1 Figure 3. Current-Gain -- Bandwidth Product V, TEMPERATURE COEFFICIENTS (mV/C) f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area 5 10 100 IC, COLLECTOR CURRENT (mA) Figure 4. "Saturation" and "On" Voltages -0.2 -1.0 VCE = 2 VOLTS T = 0C to +100C -1.6 V for VBE -2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Temperature Coefficients http://onsemi.com 3 1000 1000 BC635, BC637, BC639 PACKAGE DIMENSIONS TO-92 (TO-226AA) CASE 029-04 ISSUE AD A B STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. SECTION X-X N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 BC635/D