2SC3355 NPN SILICON EPITAXIAL TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 2
www.unisonic.com.tw QW-R201-036.Ba
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Collector current IC 100 mA
Total power dissipation PT 600 mW
Junction Temperature TJ 125 ℃
Operating Temperature TOPR -20 ~ +85 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damag ed.
Absol ute ma ximum ratings are stress ratings only and functional device operation is n ot implied
2.The device is guaranteed to meet performa nce specification within 0℃~70 ℃operating temperature
range and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cutoff Current ICBO V
CB=10V, IE=0 1.0 µA
Emitter Cutoff Current IEBO V
EB=1V, IC=0 1.0 µA
DC Current Gain hFE V
CE=10V, IC=20mA 50 300
Gain bandwidth Product fT V
CE=10V, IC=20mA 7 GHz
Feed-Back Capacitance Cre V
CB=10V, IE=0, f=1.0MHz 1.0 pF
Noise Figure NF VCE=10V, IC=7mA, f=1.0GHz 1.1 dB
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.