O1 DE 3875081 cours71 3 rT "3875081 GE SOLID STATE Pro Electron Power Transistors O1E 17571 DO T- 37-1 BDY90, BDY91, BDY92 High-Speed Silicon N-P-N Planar Transistors Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications Features: Maximum operating area curves tor de and pulse operation The RCA-BDY90, BDY91, and BDY92 are epitaxial silicon n-p-n planar transistors. They differ in breakdown-voltage ratings, laakage-current, and dc-beta values. The high current-handiing capability of these transistors in conjunction with fast switching speeds make them especially sulted for switching-control amplifiers, power gates, switching regulators, converters, and inverters. Other recommended applications Include dc-rf amplifiers and power oscillators. These transistors are supplied In the steel JEDEC TO-204AA hermetic plackage. MAXIMUM RATINGS, Absolute-Maximum Values: VCRO cece reece nett e tere teen bebe see eee eee eH ASF HEED teen ebb bebianeeen betes Veex{sus) Vee=-1.5V Vceo(sus} Veeo aster ee neisae Te STEPS cece ence ecto nese e een ene teeter een ses ne este en eee nesneonnes Te S 25C, Vee > 28V 576 File Number 1289 TERMINAL DESIGNATIONS c (FLANGE) En , 92CS-27516 JEDEC TO-204AA PERCENTAGE OF RATED SPEGFIED VOLTAGE CASE TEMPERATURE {Tc} C 9208-33600 Fig. 1 - Dissipation derating curves for all types. BDY91 400 BDOY92 100 80 6 10 15 2 80 60 Ss prr<<< < 40 See Fig. 1 See Figs. 1&4 ~65 to 175 175 1114 C- 03tre tae = = 01 de fsazsoar aoizsze s 3875081 GE SOLID STATE O1E 17572 D7 S3-// Pro Electron Power Transistors ox BDY90, BDY91, BDY92 ELECTRICAL CHARACTERISTICS, at Case Temperature (To) =25C Unless Otherwise Specified Test Conditions Limits nt . Characteristic Vonage Cone BDYS0 BDyYo1 BOY92 | Units VcE | VBE] Itc | !B { Min. | Max. | Min. | Max.| Min. | Max. 120 | ~-1.5 _ 3 - _ - _ ! . . SoS 1s0c | 100 | -15 -~{-]-{3]/--]-] m 80 | -1.5 - = _ = = 3 2 1a 35 - 35 - 35 _ nFE 5 .| 64 30 | 120 | 30] 120] 30 | 120 5 104 20 - 20 _ 20 _ lhfel 14 _ 14 _ 14 _ f= MHz 0.6 Typ. Typ. Typ. Voeo(sus)> 0.2 o |100| | so] {| 60] VoEx(sus)b 15}02] 0 | 120] }100} | so] Vv VEBO _ - ~ le = 0.05 A 0 6 6 8 54) 0.5 - 0.5 | 05 - 0.5 Voet(sal) 18] 1 ||fis|jas]|fiol 5a 0.5 - 1.2 ~~ 1.2 ~_ 1.2 VBel(sal) orf 1 | fis] ]1s] ]Jas] ton Voc = 30 V 5 o5] 1035] 1035] | 0.35 ts Voc = 30 V 5 }O5e] | 1.3 ~ 7,13 7 13 ps tf ec] - _ Voc = 30 V 5 0.5 0.2 0.2 0.2 Rec 10 10 - 2.5 - 2.5 - 2.5 | C/W a Pulsed: pulse duration = 300 ps, duty factor < 2 %. c IB, = ~IBo b CAUTION: The sustaining voltage VcEQ(sus) and Vyex MUST NOT be measured on a curve tracer. * eee SV Teese 1oS Mis 2. yresec i = 8 = E ~ z 1 * s . 2 3 25 9 or ' wo Ot ' 19 COLLECTOR CURRENT (Ic) A gees-sae01 COLLECTOR CURRENT (I)-A e2s-35002 Fig.2 - Typical de beta characteristics Fig.3 - Typical gain-bandwidth product for all types. for all types. 1115 C04 577O1 DE Mas7soa1 po017573 7 I "3875081 GE SOLID STATE. OIE 175739 oD TSS] - Pro Electron Power Transistors BDY90, BDY91, BDY92 SE TEMPERATURE( Te ). URVES MUST BE QERATED LINEARLY WITH INCREASE IN TEMPERATURE) COLLECTOR CURRENT (Ig) & Fs COLLECTOR -TO-EMITTER VOLTAGE (Voph ezcu-s3o488 Fig.4 - Maximum operating areas for all types, Trae 1 i v TO=-EMITTER [Vee (sat JUNCTION TEMPERATURE (T))*C gacs-a3e03 wort coLuecron curaeNt tera vacacsnane Fig.5 - Typical collector leakage current Fig.6 - Typloal follectorsto-emitter satu vs, junction temperature for all types. ration voltage character function of collector current for all types. Tye 28C Ig in > ! m= s = 8 a BASE -TOEMITTER SATURATION VOLTAGE ha JUNCTION TEMPERATURE IT)! *C g25-3308 COLLECTOR CURRENT A yzeaeas S *Fig.7 - Typical collector-to-emitter satu- Fig.8 - Typical base-to-emitier satu- ration voltage characteristics as a ration voltage characteristics as a function of junction temperature function of collector current for all types. for all types. 578 1116 c-05Ob DE W3875081 0017574 4 IT 3875081 G E SOLID STATE CE 17674 TSB! Pro Electron Power Transistors JUNCTION TEMPERATURE (Ty - GC 9208-33807 Fig.9 - Typical base-to-emitter satu- ration voltage characteristics as a function of junction temperature, BDYS0, BDY91, BDY92 579 A