TLP630
2007-10-01
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TOSHIBA Photocoupler GaAs IRed & PhotoTransistor
TLP630
Programmable Controllers
AC / DCInput Module
Telecommunication
The TOSHIBA TLP630 consists of a phototransistor optically coupled to
two gallium arsenide infrared emitting diode connected inverse parallel
in a six lead plastic DIP package.
Collectoremitter voltage: 55V min.
Current transfer ratio: 50% min.
Rank GB: 100% min.
Isolation voltage: 5000Vrms min.
UL recognized: UL1577 file no. E67349
Pin Configurations(top view)
Unit in mm
TOSHIBA 117A8
Weight: 0.4 g (typ.)
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF(RMS) 60 mA
LED
Forward current derating
(Ta 39°C) ΔIF / °C 0.7 mA / °C
Peak forward current
(100μs pulse,100pps) IFPT ±1 A
Collectoremitter voltage VCEO 55 V
Collectorbase voltage VCBO 80 V
Emittercollector voltage VECO 7 V
Emitterbase voltage VEBO 7 V
Collector current IC 50 mA
Power dissipation PC 150 mW
Detector
Power dissipation derating
(Ta 25°C) ΔPC / °C 1.5 mW / °C
Operating temperature range Topr 55~100 °C
Storage temperature range Tstg 55~125 °C
Lead soldering temperature Tsol 260(10s) °C
Junction temperature Tj 125 °C
Total package power dissipation PT 250 mW
Total package power dissipation
derating ΔPT / °C 2.5 mW / °C
Isolation voltage
(AC, 1 min., R.H. 60%) BVS 5000 V r m s
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC 5 24 V
Forward current IF(RMS) 16 25 mA
Collector current IC 1 10 mA
Operating temperature Topr 25 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10mA 1.0 1.15 1.3 V
Forward current IF V
F = 0.7V 2.5 10 μA
LED
Capacitance CT V = 0, f = 1MHz 60 pF
Collectoremitter breakdown
voltage V(BR)CEO IC = 0.5mA 55 V
Emittercollector breakdown
voltage V(BR)ECO IE = 0.1mA 7 V
Collectorbase breakdown
voltage V(BR)CBO IC = 0.1mA 80 V
Emitterbase breakdown
voltage V(BR)EBO IE = 0.1mA 7 V
VCE = 24V 10 100 nA
Collector dark current ID(ICEO)
VCE = 24V, Ta = 85°C 2 50 μA
Collector dark current ICBO V
CB = 10V 0.1 nA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1MHz 10 pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
50 600
Current transfer ratio IC / IF IF = ±5mA, VCE = 5V
Rank GB 100 600
%
60
Saturated CTR IC / IF(sat)
IF = ±1mA, VCE = 0.4V
Rank GB 30
%
Base photocurrent IPB I
F = ±5mA, VCB = 5V 10 μA
Collectoremitter saturation
voltage VCE(sat) IC = 2.4mA, IF = ±8mA 0.4 V
Offstate collector current IC(off) VF = ±0.7V, VCE = 24V 1 10 μA
CTR symmetry IC(ratio) IC(IF = 5mA) /
IC(IF = +5mA) (Note 1) 0.33 1 3
(Note 1)
I
C(ratio) =
5V)
CE
V
F1,
I
F
(I
C1
I
5V)
CE
V
F2,
I
F
(I
C2
I
==
==
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2007-10-01
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance (input to output) CS VS = 0, f = 1MHz 0.8 pF
Isolation resistance RS V
S = 500V, R.H. 60% 5×1010 1014
AC, 1 minute 5000
AC, 1 second, in oil 10000
Vrms
Isolation voltage BVS
DC, 1 minute, in oil 10000 Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr 2
Fall time tf 3
Turnon time tON 3
Turnoff time tOFF
VCC = 10V, IC = 2mA
RL = 100
3
μs
Turnon time tON 2
Storage time tS 15
Turnoff time tOFF
RL = 1.9 k (Note 2)
RBE = OPEN
VCC = 5 V, IF = ±16mA 25
μs
Turnon time tON 2
Storage time tS 12
Turnoff time tOFF
RL = 1.9k (Note 2)
RBE = 220k, VCC = 5 V
IF = ±16mA 20
μs
(Note 2) Switching time test circuit
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2007-10-01
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2007-10-01
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TLP630
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RESTRICTIONS ON PRODUCT USE
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the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
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