DMN63D8LW N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary Features and Benefits V(BR)DSS RDS(ON) max 30V 2.8 @ VGS = 10V 3.8 @ VGS = 5V ID max TA = +25C 380mA 330mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Motor Control Power Management Functions Backlighting Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) D SOT323 D G Gate Protection Diode ESD protected up to 1kV Top View S G S Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN63D8LW-7 DMN63D8LW-13 Notes: Case SOT323 SOT323 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information MXX= Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year 2014 Code B Month Code Jan 1 2015 C 2016 D 2017 E 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMN63D8LW Document number: DS38031 Rev. 1 - 2 1 of 6 www.diodes.com August 2015 (c) Diodes Incorporated DMN63D8LW Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<5s TA = +25C TA = +70C TA = +25C TA = +70C Value 30 20 380 300 ID mA 430 340 1.2 ID Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) Unit V V IDM mA A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RJA PD RJA TJ, TSTG Steady State Steady State Value 300 426 420 301 -55 to +150 Unit mW C/W mW C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 1.0 10.0 V A A VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) 0.8 1.5 2.8 3.8 4.2 4.5 13 1.2 V Static Drain-Source On-Resistance 0.8 80 mS V VDS = VGS, ID = 250A VGS = 10.0V, ID = 250mA VGS = 5.0V, ID = 250mA VGS = 4.5V, ID = 250mA VGS = 4.0V, ID = 250mA VGS = 2.5V, ID = 10mA VDS = 10V, ID = 0.115A VGS = 0V, IS = 115mA 23.2 3.0 2.2 79.9 0.9 0.4 0.1 0.2 2.3 3.9 11.4 16.7 pF VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 30V, ID = 150mA ns VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: gFS VSD Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF Test Condition 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN63D8LW Document number: DS38031 Rev. 1 - 2 2 of 6 www.diodes.com August 2015 (c) Diodes Incorporated DMN63D8LW 0.8 0.6 VDS= 5V VGS=10V 0.7 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.6 VGS=3.0V 0.5 VGS=4.0V 0.4 VGS=4.5V 0.3 VGS=5.0V VGS=2.5V 0.2 0.0 85 125 150 25 0.4 0.3 0.2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 5 10 9 8 7 6 VGS=4.5V VGS=2.5V 5 VGS=4.0V 4 3 2 VGS=5.0V VGS=10V 1 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () -55 0.1 VGS=2.0V 0.1 0 9 8 150 7 125 6 85 5 4 3 2 1 25 -55 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN63D8LW Document number: DS38031 Rev. 1 - 2 3 of 6 www.diodes.com 8 8 7 6 5 4 ID=250mA 3 2 1 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS= 4.5V 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 10 1 10 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT NEW PRODUCT 0.5 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.5 VGS=10V, ID=250mA 2 1.5 VGS=4.5V, ID=250mA 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature August 2015 (c) Diodes Incorporated 2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 6 5 VGS=4.5V, ID=250mA 4 3 VGS=10V, ID=250mA 2 1 1.8 1.6 ID=1mA 1.4 1.2 ID=250A 1 0.8 0.6 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction Temperature 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Junction Temperature 0.8 100 f=1MHz CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 0.7 0.6 VGS=0V, TJ=125 0.5 0.4 VGS=0V, TJ=150 0.3 VGS=0V, TJ=85 VGS=0V, TJ=25 0.2 VGS=0V, TJ=-55 0.1 0 Ciss 10 Coss Crss 1 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 1 10 RDS(ON) Limited PW = 100s PW =1ms ID, DRAIN CURRENT (A) 8 VGS (V) NEW PRODUCT NEW PRODUCT DMN63D8LW 6 VDS=30V, ID=150mA 4 0.1 0.01 2 0.001 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Qg (nC) Figure 11. Gate Charge DMN63D8LW Document number: DS38031 Rev. 1 - 2 1 4 of 6 www.diodes.com PW =10ms PW =100ms PW =1s TJ(MAX)=150 TA=25 Single Pulse DUT on 1*MRP board VGS=10V 0.1 PW =10s DC 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 August 2015 (c) Diodes Incorporated DMN63D8LW NEW PRODUCT NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.3 D=0.9 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA (t)=r(t) * RJA RJA=421/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D A2 c A1 a e L b E E1 F SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC e1 1.20 1.40 1.30 F 0.375 0.475 0.425 L 0.25 0.40 0.30 a 8 All Dimensions in mm e1 DMN63D8LW Document number: DS38031 Rev. 1 - 2 5 of 6 www.diodes.com August 2015 (c) Diodes Incorporated DMN63D8LW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT NEW PRODUCT X Y Dimensions Y1 G C G X Y Y1 Value (in mm) 0.650 1.300 0.470 0.600 2.500 C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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