1/33
XC6601 Series
Low Voltage Input LDO Voltage Regulator with Soft-Start Function
■FEATURES
Maximum Output Current : 400mA (Limit:550mA TYP.)
Dropout Voltage
Bias Voltage Range
: 38mV@IOUT=100mA (TYP.)
(at VBIAS - VOUT=2.4V)
: 2.5V ~ 6.0V (VBIAS - VOUT≧1.2V)
Input Voltage Range : 1.0V ~ 3.0V(VIN≦VBIAS)
Output Voltage Range : 0.7V ~ 1.8V (0.05V increments)
Output Voltage Accuracy :±20mV
Power Consumption : IBIAS=25μA , IIN=1.0μA
(TYP.)
I
BIAS=0.01μA , IIN=0.01μA
(TYP.)
UVLO : VBIAS=2.0V, VIN=0.4V (TYP.)
TSD (Detect/Release) : 150℃/125℃ (TYP.)
Soft-Start Time : 240μs @ VOUT=1.2V (TYP.)
Operating Temperature Range
Function
Low ESR Capacitor
: -40℃ ~ +85℃
: CL High Speed Auto-Discharge
: Ceramic Capacitor Compatible
Packages : USP-6C, SOT-25, SOT-89-5
Environmentally Friendly : EU RoHS Compliant, Pb Free
■APPLICATIONS
●Mobile phones
●Cordless phones
●Wireless communication equipment
●Portable games
●Cameras
●Audio visual equipment
●Portable AV equipment
●PDAs
■ TYPICAL APPLICATION CIRCUIT
●VBIAS =3.6V , VIN =1.8V , VOUT =1.5V
■TYPICAL PEFORMANCE
CHARACTERISTICS
●Dropout Voltage vs. Output Current
ETR0335_006
■GENERAL DESCRIPTION
The XC6601 series is a low voltage input CMOS LDO regulator which provides highly accurate (±20mV) outputs and can
supply current efficiently due to its ultra low on-resistance even at low output voltages. The series is ideally suited to the
applications which require very low dropout voltage operation and consists of a voltage reference, an error amplifier, a driver
transistor, a current limiter, a fold back circuit, a thermal shutdown (TSD) circuit, an under voltage lock out (UVLO) circuit,
soft-start circuit and a phase compensation circuit.
Output voltage is selectable in 0.05V increments within a range of 0.7V to 1.8V using laser trimming technology and ceramic
capacitors can be used for the output stabilization capacitor (CL).
The over current protection circuit (the current limiter and the fold back circuit) as well as the thermal shutdown circuit (the
TSD circuit) are built-in. These two protection circuits will operate when either the output current reaches the current limit
level or the junction temperature reaches the temperature limit level.
With the built-in UVLO function, the regulator output is forced OFF when the voltage level at the VBIAS pin or the VIN pin falls
below the UVLO voltage level. With the soft-start function, the inrush current from VIN to VOUT for charging CL at start-up can
be reduced and makes the VIN stable.
The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced
power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor
(CL) to be discharged via the internal auto-discharge switch which is located between the VOUT pin and the VSS pin. As a
result the VOUT pin quickly returns to the VSS level.
XC6601B121MR
0
50
100
150
200
250
300
0 100 200 300 400
Output Current: IOUT(mA)
Dropout Voltage: Vdif(mV)
VBIAS=3.0V
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2V
VBIAS=5.0V
Ta=25 [℃]
2/33
XC6601 Series
CEVOUT
VSSVBIASVIN
SOT-25
(TOP VIEW)
123
45
●USP-6C ●SOT-25 ●SOT-89-5
PIN NUMBER
USP-6C SOT-25 SOT-89-5 PIN NAME FUNCTION
1 2 2 VBIAS Power Supply Input
3 1 4 VIN Driver Transistor Input
4 5 5 VOUT Output
2 3 3 VSS Ground
6 4 1 CE ON/OFF Control
MARK DESCRIPTION SYMBOL DESCRIPTION
A Pull-Down Resistor Built-in
① Type of Regulators B No Pull-Down Resistor Built-in
②③ Output Voltage 07 ~ 18 e.g.) VOUT(T)=1.2V⇒②=1,③=2
1 0.1V increments
e.g.) 1.2V⇒②=1,③=2,④=1
④ Output Voltage
Type B 0.05V increments
e.g.) 1.25V⇒②=1,③=2,④=B
MR SOT-25
MR-G SOT-25
ER USP-6C
ER-G USP-6C
PR SOT-89-5
⑤⑥-⑦ Packages
Taping Type (*2)
PR-G SOT-89-5
■PIN CONFIGURATION
■PIN ASSIGNMENT
■PRODUCT CLASSIFICATION
●Ordering Information
XC6601①②③④⑤⑥-⑦ (*1) : CE High Active, Soft-Start Function Built-in, CL Auto Discharge Function
*The heat dissipation pad of the USP-6C
package is recommended to solder as the
recommended mount pattern and metal
mask pattern for mounting strength. This
pad should be electrically opened or
connected to the VBIAS (No.1) pin.
(*1) The ”-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
(*2) The device orientation is fixed in its embossed tape pocket.
For reverse orientation, please contact your local Torex sales office or representative.
(Standard orientation: ⑤R-⑦, Reverse orientation: ⑤L-⑦)
3/33
XC6601
Series
(1)XC6601A Series
(2)XC6601B Series
VBIAS
CE
Voltage Reference
With
Soft Start Error
Amp
-
+
CE
each
circuit
ON/OFF
Control
VIN
VSS
VOUT
R1
R2
Current
Limit
Thermal
Protection
Under Voltage
Lock Out
CE/
Rdischg
CE/
R pull-down
VBIAS
CE
Voltage Reference
With
Soft Start Error
Amp
-
+
CE
each
circuit
ON/OFF
Control
VIN
VSS
VOUT
R1
R2
Current
Limit
Thermal
Protection
Under Voltage
Lock Out
CE/
Rdischg
CE/
■BLOCK DIAGRAMS
(
1
)
XC6601A Series
(2) XC6601B Series
*Diodes inside the circuit are an ESD protection diode and a parasitic diode.
4/33
XC6601 Series
PARAMETER SYMBOL RATINGS UNITS
Bias Voltage VBIAS VSS-0.3 ~ +7.0 V
Input Voltage VIN VSS-0.3 ~ +7.0 V
Output Current IOUT 700 (*1) mA
VSS-0.3 ~ VBIAS+0.3
Output Voltage VOUT VSS-0.3 ~ VIN+0.3 V
CE Input Voltage VCE VSS-0.3 ~ +7.0 V
100
USP-6C 1000 (PCB mounted) *2
250
SOT-25 600 (PCB mounted) *2
500
Power Dissipation
SOT-89-5
Pd
1300 (PCB mounted) *2
mW
Operating Temperature Range Topr -40 ~ +85 ℃
Storage Temperature Range Tstg -55 ~ +125 ℃
(*1) IOUT=Less than Pd / (VIN-VOUT)
(*2) The power dissipation figure shown is PCB mounted. Please refer to pages 29～31 for details.
■MAXIMUM ABSOLUTE RATINGS
Ta=2 5 ℃
5/33
XC6601
Series
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT
Bias Voltage (*1) V
BIAS VCE =VBIAS,VIN =VOUT(T)+0.3V 2.5 - 6.0 V
①
Input Voltage (*2) V
IN VBIAS=VCE=3.6V 1.0 - 3.0 V
①
-0.02 VOUT(T) (*4) +0.02
Output Voltage VOUT(E) (*3) VBIAS=VCE=3.6V, VIN =VOUT(T)+0.3V,
IOUT=100mA E-0 (*5)
V ①
Maximum Output
Current 1 IOUTMAX 1 VCE =VBIAS ,VBIAS -VOUT(T)≧1.2V
VIN =VOUT(T)+0.5V 200 - -
mA ①
Maximum Output
Current 2 IOUTMAX 2 VCE =VBIAS ,VBIAS -VOUT(T)≧1.3V
VIN =VOUT(T)+0.5V 300 - -
mA ①
Maximum Output
Current 3 IOUTMAX 3 VCE =VBIAS ,VBIAS -VOUT(T)≧1.5V
VIN =VOUT(T)+0.5V 400 - -
mA ①
Load Regulation △VOUT VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V,
1mA≦IOUT≦300mA - 8 17
mV ①
Dropout Voltage 1 Vdif1(*7) VBIAS=VCE, IOUT=100mA E-1 (*6) mV ①
Dropout Voltage 2 Vdif2 (*7) VCE =VBIAS , IOUT=200mA E-2 (*6) mV ①
Dropout Voltage 3 Vdif3 (*7) VCE =VBIAS , IOUT=300mA E-3 (*6) mV ①
Dropout Voltage 4 Vdif4 (*7) VCE =VBIAS , IOUT=400mA E-4 (*6) mV ①
Supply Current 1 IBIAS VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V
VOUT=OPEN 8 25 45
μA①
Supply Current 2 IIN VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V
VOUT=OPEN 0.1 1.0 3.0
μA①
VOUT(T)≧1.0V
VBIAS=VCE =3.6V, VIN=VOUT(T)
VOUT= VOUT(T) - 0.05V
Bias Current (*10) IBIASMAX VOUT(T)＜1.0V
VBIAS=VCE =3.6V, VIN=1.0V
VOUT= VOUT(T) - 0.05V
- 1.0 2.5
mA ①
Stand-by Current 1 IBIAS_STB VBIAS=6.0V, VIN=3.0V, VCE=VSS - 0.01 0.10
μA①
Stand-by Current 2 IIN_STB VBIAS=6.0V, VIN=3.0V, VCE=VSS - 0.01 0.35
μA①
VOUT(T)≧1.3V
VOUT(T)+1.2V≦VBIAS≦6.0V,
VIN=VOUT(T)+0.3V, VCE =VBIAS , IOUT=1mA
Bias Regulation △VOUT/
(△VBIAS・VOUT)VOUT(T)＜1.3V
2.5V≦VBIAS≦6.0V,
VIN=VOUT(T)+0.3V, VCE =VBIAS , IOUT=1mA
- 0.01 0.3
%/V ①
VOUT(T)≧0.90V,
VOUT(T)+0.1V≦VIN≦3.0V,
VBIAS=VCE=3.6V, IOUT=1mA
Input Regulation △VOUT/
(△VIN・VOUT) V OUT(T)＜0.90V,
1.0V≦VIN≦3.0V
VBIAS=VCE=3.6V, IOUT=1mA
- 0.01 0.1
%/V ①
Bias Voltage UVLO VBIAS_UVLO VCE =VBIAS, VIN =VOUT(T)+0.3V,
IOUT=1mA 1.37 2.0 2.5
V ①
Input Voltage UVLO VIN_UVLO VBIAS=VCE=3.6V, IOUT=1mA 0.07 0.4 0.6
V ①
VBIAS Ripple Rejection VBIAS_PSRR VBIAS= VCE =3.6VDC+0.2Vp-pAC,
VIN=VOUT(T)+0.3V, IOUT=30mA,f=1kHz - 40 -
dB ②
VIN Ripple Rejection VIN_PSRR VIN=VOUT(T)+0.3VDC+0.2Vp-pAC,
VBIAS=3.6V, IOUT=30mA, f=1kHz - 60 -
dB ②
■ELECTRICAL CHARACTERISTICS Ta=2 5 ℃
6/33
XC6601 Series
E-0 E-0
OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V)
NOMINAL
OUTPUT
VOLTAGE (V) VOUT
NOMINAL
OUTPUT
VOLTAGE (V) VOUT
VOUT(T) MIN. MAX. VOUT(T) MIN. MAX.
0.70 0.680 0.720 1.30 1.280 1.320
0.75 0.730 0.770 1.35 1.330 1.370
0.80 0.780 0.820 1.40 1.380 1.420
0.85 0.830 0.870 1.45 1.430 1.470
0.90 0.880 0.920 1.50 1.480 1.520
0.95 0.930 0.970 1.55 1.530 1.570
1.00 0.980 1.020 1.60 1.580 1.620
1.05 1.030 1.070 1.65 1.630 1.670
1.10 1.080 1.120 1.70 1.680 1.720
1.15 1.130 1.170 1.75 1.730 1.770
1.20 1.180 1.220 1.80 1.780 1.820
1.25 1.230 1.270
PARAMETER SYNBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT
Output Voltage
Temperature
Characteristics
△VOUT/
△Topr・VOUT
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V ,
IOUT=30mA,
- 40℃≦ Topr ≦85℃
- ±100 -
ppm/℃ ①
Limit Current ILIM VOUT=VOUT(E)×0.95,
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V 400 550 - mA ①
Short Current ISHORT VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V,
VOUT=0V - 80 -
mA ①
Thermal Shutdown
Detect Temperature TTSD Junction Temperature - 150 - ℃ ①
Thermal Shutdown
Release Temperature TTSR Junction Temperature - 125 - ℃ ①
Hysteresis Width TTSD－TTSR - 25 -
℃ ①
CL Auto-Discharge
Resistance Rdischg VBIAS=3.6V, VIN= VOUT(T)+0.3V,
VCE= VSS, VOUT=VOUT(T) 290 430 610 Ω ①
CE "H" Level Voltage VCEH VBIAS=3.6V, VIN= VOUT(T)+0.3V 0.75 - 6.0
V ①
CE "L" Level Voltage VCEL VBIAS=3.6V, VIN= VOUT(T)+0.3V - - 0.16
V ①
CE "H" Level Current
(A Series) 2.4 - 8.0
CE "H" Level Current
(B Series)
ICEH VBIAS=VCE=6.0V,
VIN=VOUT(T)+0.3V -0.1 - 0.1
μA ①
CE "L" Level Current ICEL VBIAS=6.0V, VCE=VSS
VIN=VOUT(T)+0.3V -0.1 - 0.1
μA ①
Soft-Start Time (*11) t
SS VBIAS=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA
VCE=0V→3.6V 100 - 410
μs ③
■OUTPUT VOLTAGE CHART
NOTE:
* 1: Please use Bias voltage VBIAS within the range VBIAS –VOUT(E)
(*3)≧1.2V
* 2: Please use Input voltage VIN within the range VIN≦VBIAS
* 3: VOUT(E) = Effective output voltage (Refer to the voltage chart E-0 and E-1)
* 4: VOUT (T) = Specified output voltage
* 5: E-0 = Please refer to the table named OUTPUT VOLTAGE CHART
* 6: E-1 = Please refer to the table named DROPOUT VOLTAGE CHART
* 7: Vdif = {VIN1(*8)-VOUT1(*9)}.
* 8: VIN1 = The input voltage when VOUT1 appears as input voltage is gradually decreased.
* 9: VOUT1 = A voltage equal to 98% of the output voltage while maintaining an amply stabilized output voltage when VIN=VBIAS at VBIAS<3.0V, and
VIN=3.0V at VBIAS≧3.0V is input to the VIN pin.
* 10: IBIASMAX = A supply current at the VBIAS pin providing for the output current (IOUT).
* 11: tSS is defined as a time VOUT reaches VOUT(E)x0.9V from the time when CE H threshold 0.75V is input to the CE pin.
■ELECTRICAL CHARACTERISTICS (Continued) Ta=2 5 ℃
7/33
XC6601
Series
E-1
DROPOUT VOLTAGE 1 (mV)
Vdif 1
VBIAS=3.0 (V) VBIAS=3.3 (V) VBIAS=3.6 (V) VBIAS=4.2 (V) VBIAS=5.0 (V)
NOMINAL
OUTPUT
VOLTAGE (V)
Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV)
VOUT(T)
Vgs(*1)
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
0.70 2.30 40 300 2.60 35 300 2.90 33 300 3.50 30 300 4.30 27 300
0.75 2.25 250 2.55 250 2.85 250 3.45 250 4.25 250
0.80 2.20
41 200 2.50
36 200 2.80 34 200 3.40 31 200 4.20 28 200
0.85 2.15 150 2.45 150 2.75 150 3.35 150 4.15 150
0.90 2.10
42 100 2.40
38 100 2.70 34 100 3.30 31 100 4.10 28 100
0.95 2.05 2.35 2.65 3.25 50 4.05 50
1.00 2.00
43 68
2.30 40 61
2.60 35 56
3.20 32 49 4.00 28 44
1.05 1.95 2.25 2.55 3.15 3.95
1.10 1.90
46 72
2.20 41 63
2.50 36 58
3.10 32 50 3.90 29 45
1.15 1.85 2.15 2.45 3.05 3.85
1.20 1.80
48 75
2.10 42 65
2.40 38 59
3.00 32 51 3.80 29 46
1.25 1.75 2.05 2.35 2.95 3.75
1.30 1.70
51 81
2.00 43 68
2.30 40 61
2.90 33 52 3.70 29 47
1.35 1.65 1.95 2.25 2.85 3.65
1.40 1.60
54 87
1.90 46 72
2.20 41 63
2.80 34 53 3.60 30 47
1.45 1.55 1.85 2.15 2.75 3.55
1.50 1.50
57 92
1.80 48 75
2.10 42 65
2.70 34 54 3.50 30 48
1.55 1.45 61 94 1.75 2.05 2.65 3.45
1.60 1.40 63 97 1.70 51 81
2.00 43 68
2.60 35 56 3.40 31 48
1.65 1.35 67 104 1.65 1.95 2.55 3.35
1.70 1.30 70 113 1.60 54 87
1.90 46 72
2.50 36 58 3.30 31 49
1.75 1.25 74 131 1.55 1.85 2.45 3.25
1.80 1.20 79 154 1.50 57 92
1.80 48 75
2.40 38 59 3.20 32 49
■DROPOUT VOLTAGE CHART
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
8/33
XC6601 Series
E-2
DROPOUT VOLTAGE 2 (mV)
Vdif 2
VBIAS =3.0(V) VBIAS =3.3(V) VBIAS =3.6(V) VBIAS =4.2(V) VBIAS =5.0(V)
NOMINAL
OUTPUT
VOLTAGE (V)
Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV)
VOUT (T)
Vgs(*1)
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
0.70 2.30 81 300 2.60 74 300 2.90 68 300 3.50 62 300 4.30 57 300
0.75 2.25 250 2.55 250 2.85 250 3.45 250 4.25 250
0.80 2.20
85 200 2.50 76 200 2.80 70 200 3.40 63 200 4.20 58 200
0.85 2.15 150 2.45 150 2.75 150 3.35 150 4.15 150
0.90 2.10
88 131 2.40 78 117 2.70 72 110 3.30 63 100 4.10 58 100
0.95 2.05 2.35 2.65 3.25 4.05
1.00 2.00
90 139
2.30 81 123 2.60 74 111 3.20 64 98
4.00 58 88
1.05 1.95 2.25 2.55 3.15 3.95
1.10 1.90
96 146
2.20 85 127 2.50 76 114 3.10 65 101
3.90 59 90
1.15 1.85 2.15 2.45 3.05 3.85
1.20 1.80
101 154
2.10 88 131 2.40 78 117 3.00 67 103
3.80 59 91
1.25 1.75 2.05 2.35 2.95 3.75
1.30 1.70
108 170
2.00 90 139 2.30 81 123 2.90 68 106
3.70 60 92
1.35 1.65 1.95 2.25 2.85 3.65
1.40 1.60
115 179
1.90 96 146 2.20 85 127 2.80 70 108
3.60 61 93
1.45 1.55 1.85 2.15 2.75 3.55
1.50 1.50
122 192
1.80 101 154 2.10 88 131 2.70 72 110
3.50 62 94
1.55 1.45 129 197 1.75 2.05 2.65 3.45
1.60 1.40 135 206 1.70
108 170 2.00 90 139 2.60 74 111
3.40 63 95
1.65 1.35 145 223 1.65 1.95 2.55 3.35
1.70 1.30 154 248 1.60
115 179 1.90 96 146 2.50 76 114
3.30 63 97
1.75 1.25 165 293 1.55 1.85 2.45 3.25
1.80 1.20 175 353 1.50
122 192 1.80 101 154 2.40 78 117
3.20 64 98
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
■DROPOUT VOLTAGE CHART (Continued)
9/33
XC6601
Series
E-3
DROPOUT VOLTAGE 3 (mV)
Vdif 3
VBIAS =3.0(V) VBIAS =3.3(V) VBIAS =3.6(V) VBIAS =4.2(V) VBIAS =5.0(V)
NOMINAL
OUTPUT
VOLTAGE (V)
Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV)
VOUT (T)
Vgs(*1)
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
0.70 2.30 130 300 2.60 115 300 2.90 107 300 3.50 95 300 4.30 89 300
0.75 2.25 250 2.55 250 2.85 250 3.45 250 4.25 250
0.80 2.20
134 200 2.50 117 200 2.80 109 200 3.40 96 200 4.20 90 200
0.85 2.15 2.45 2.75 3.35 150 4.15 150
0.90 2.10
138 204
2.40 119 181 2.70 111 167 3.30 97 148 4.10 90 132
0.95 2.05 2.35 2.65 3.25 4.05
1.00 2.00
145 216
2.30 130 190 2.60 115 170 3.20 98 151
4.00 91 134
1.05 1.95 2.25 2.55 3.15 3.95
1.10 1.90
153 227
2.20 134 197 2.50 117 176 3.10 101 153
3.90 92 137
1.15 1.85 2.15 2.45 3.05 3.85
1.20 1.80
161 239
2.10 138 204 2.40 119 181 3.00 105 155
3.80 93 139
1.25 1.75 2.05 2.35 2.95 3.75
1.30 1.70
173 264
2.00 145 216 2.30 130 190 2.90 107 159
3.70 93 140
1.35 1.65 1.95 2.25 2.85 3.65
1.40 1.60
184 289
1.90 153 227 2.20 134 197 2.80 109 163
3.60 94 141
1.45 1.55 1.85 2.15 2.75 3.55
1.50 1.50
196 313
1.80 161 239 2.10 138 204 2.70 111 167
3.50 95 142
1.55 1.45 209 323 1.75 2.05 2.65 3.45
1.60 1.40 222 344 1.70
173 264 2.00 145 216 2.60 115 170
3.40 96 145
1.65 1.35 239 388 1.65 1.95 2.55 3.35
1.70 1.30 256 442 1.60
184 289 1.90 153 227 2.50 117 176
3.30 97 148
1.75 1.25 1.55 1.85 2.45 3.25
1.80 1.20
- -
1.50 196 313 1.80 161 239 2.40 119 181
3.20 98 151
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
■DROPOUT VOLTAGE CHART (Continued)
10/33
XC6601 Series
E-4
DROPOUT VOLTAGE 4 (mV)
Vdif 4
VBIAS =3.0(V) VBIAS =3.3(V) VBIAS =3.6(V) VBIAS =4.2(V) VBIAS =5.0(V)
NOMINAL
OUTPUT
VOLTAGE (V)
Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV)
VOUT (T)
Vgs(*1)
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
Vgs
(V) TYP. MAX.
0.70 2.30 189 300 2.60 157 300 2.90 146 300 3.50 129 300 4.30 116 300
0.75 2.25 2.55 2.85 3.45 250 4.25 250
0.80 2.20
195 277
2.50 164 272 2.80 150 250 3.40 131 246 4.20 118 231
0.85 2.15 2.45 2.75 3.35 4.15
0.90 2.10
201 277
2.40 170 272 2.70 153 250 3.30 134 246
4.10 119 231
0.95 2.05 2.35 2.65 3.25 4.05
1.00 2.00
206 277
2.30 189 272 2.60 157 250 3.20 136 246
4.00 121 231
1.05 1.95 2.25 2.55 3.15 3.95
1.10 1.90
218 277
2.20 195 272 2.50 164 250 3.10 139 246
3.90 125 231
1.15 1.85 227 2.15 272 2.45 250 3.05 246 3.85 231
1.20 1.80
231 334 2.10
201 277 2.40 170 248 3.00 142 215 3.80
128 189
1.25 1.75 2.05 2.35 2.95 3.75
1.30 1.70
248 376
2.00 206 296 2.30 189 255 2.90 146 219
3.70 128 191
1.35 1.65 1.95 2.25 2.85 3.65
1.40 1.60
264 418
1.90 218 315 2.20 195 266 2.80 150 224
3.60 129 193
1.45 1.55 1.85 2.15 2.75 3.55
1.50 1.50
281 460
1.80 231 334 2.10 201 277 2.70 153 228
3.50 129 195
1.55 1.45 1.75 2.05 2.65 3.45
1.60 1.40
- -
1.70 248 376 2.00 206 296 2.60 157 234
3.40 131 198
1.65 1.35 1.65 1.95 2.55 3.35
1.70 1.30
- -
1.60 264 418 1.90 218 315 2.50 164 241
3.30 134 202
1.75 1.25 1.55 1.85 2.45 3.25
1.80 1.20
- -
1.50 281 460 1.80 231 334 2.40 170 248
3.20 136 205
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
■DROPOUT VOLTAGE CHART (Continued)
11/33
XC6601
Series
<Voltage Regulator>
The voltage divided by resistors R1 & R2 is compared with the internal reference voltage by the error amplifier. The N-channel
MOSFET which is connected to the VOUT pin is then driven by the subsequent output signal. The output voltage at the VOUT pin is
controlled & stabilized by a system of negative feedback.
VBIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. When output current increase,
the VBIAS pin supplies output current also. VIN pin is connected to a driver transistor and provides output current.
In order to obtain high efficient output current through low on-resistance, please take enough Vgs (=VBIAS – VOUT(T)) of the driver
transistor. Output current triggers operation of constant current limiter and fold-back circuit, heat generation triggers operation of
thermal shutdown circuit, the driver transistor circuit is forced OFF when VBIAS or VIN voltage goes lower than UVLO voltage.
Further, the IC's internal circuitry can be shutdown via the CE pin's signal.
Figure1: XC6601A series
<Low ESR Capacitor>
With the XC6601 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation
circuit is built-in. The output capacitor (CL) should be connected as close to VOUT pin and VSS pin to obtain stable phase
compensation. Values required for the phase compensation are as the table below.
For a stable power input, please connect an bias capacitor (CBIAS ) of 1.0μF between the V BIAS pin and the VSS pin. Also, please
connect an input capacitor (CIN) of 1.0μF between the VIN pin and the VSS pin. In order to ensure the stable phase
compensation while avoiding run-out of values, please use the capacitor (CBIAS, CIN, CL ) which does not depend on bias or
temperature too much. The table below shows recommended values of CBIAS, CIN, CL.
Recommended Values of CBIAS, CIN, CL
BIAS CAPACITOR INPUT CAPACITOR OUTPUT CAPACITOR
SETTING VOLTAGE CBIAS CIN CL
0.7V～1.8V CBIAS=1.0μF CIN=1.0μF CL=4.7μF
■OPERATIONAL EXPLANATION
12/33
XC6601 Series
XC6601x121
0
50
100
150
200
250
300
350
400
450
500
0 100 200 300 400 500
Time (μs)
Inrush Current I
RUSH
(mA)
-4
-3
-2
-1
0
1
2
3
4
CE Input Voltage V
CE
(V)
C
IN
=C
BIAS
=1.0μF (ceramic
)
V
IN
=1.5V ,V
BIAS
=3.6V ,I
OUT
=1mA ,tr=5.0μs ,Ta=25℃
CE Input Voltage
C
L
=4.7μF (ceramic
)
C
L
=10μF (ceramic)
Inrush Current
<Soft-Start Function>
With the XC6601, the inrush current from VIN to VOUT for charging CL at start-up can be reduced and makes the VIN stable.
The soft-start time is optimized to 240μs (TYP.) at VOUT=1.2V internally. Soft-start time is defined as the VOUT reaches 90% of
VOUT(E) from the time when CE H threshold 0.75V is input to the CE pin.
<CL High Speed Auto-Discharge>
XC6601 series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the EN pin which
enables a whole IC circuit put into OFF state, is inputted via the N-channel transistor located between the VOUT pin and the VSS
pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids malfunction.
At that time, CL discharge resistance is depended on a bias voltage. Discharge time of the output capacitor (CL) is set by the CL
auto-discharge resistance (R) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value [R]
and an output capacitor value (CL) as τ(τ=C x R), the output voltage after discharge via the N channel transistor is calculated
by the following formulas.
V = VOUT x e –t/τ, or ｔ=τln（ VOUT(E) / V ）
V : Output voltage after discharge, VOUT(E) : Output voltage, t: Discharge time,
τ: CL auto-discharge resistance R×Output capacitor (CL) value C
<Current Limit, Short-Circuit Protection>
The XC6601 series’ fold-back circuit operates as an output current limiter and a short protection of the output pin. When the load
current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. When the output pin is
shorted to the VSS level, current flows about 80mA.
<Thermal Shutdown Circuit (TSD) >
When the junction temperature of the built-in driver transistor reaches the temperature limit level (150℃ TYP.), the thermal
shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown
function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the
thermal shutdown release temperature (125℃ TYP.).
■OPERATIONAL EXPLANATION (Continued)
Figure2: Example of the inrush current wave form at IC start-up. Figure3: Timing chart at IC start-up
13/33
XC6601
Series
<Under Voltage Lock Out (UVLO) >
When the VBIAS pin voltage drops below 2.0V (TYP.) or VIN pin voltage drops below 0.4V (TYP.), the output driver transistor is
forced OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the VBIAS pin
voltage rise at 2.2V (TYP.) or the VIN pin voltage rises at 0.4V (TYP.), the UVLO function is released. The driver transistor is
turned in the ON state and start to operate voltage regulation.
<CE Pin>
The IC internal circuitry can be shutdown via the signal from the CE pin with the XC6601 series. In shutdown mode, output at the
VOUT pin will be pulled down to the VSS level via R1 & R2. However, as for the XC6601 series, the CL auto-discharge resistor is
connected in parallel to R1 and R2 while the power supply is applied to the VIN pin. Therefore, time until the VOUT pin reaches the
VSS level becomes short.
The CE pin of XC6601A has pull-down circuitry so that CE input current increase during IC operation. The CE pin of XC6601B
does not have pull-down circuitry so that logic is not fixed when the CE pin is open. If the CE pin voltage is taken from VBIAS pin
or VSS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through current
in the IC's internal circuitry when medium voltage is input.
1. Please use this IC within the stated absolute maximum ratings. The IC is liable to malfunction should the ratings be
exceeded.
2. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output
current. Please keep the resistance low between VBIAS and VSS wiring or VIN and VSS wiring in particular.
3. Please wire the bias capacitor (CBIAS), input capacitor (CIN) and the output capacitor (CL) as close to the IC as possible.
4. Capacitance values of these capacitors (CBIAS, CIN, CL) are decreased by the influences of bias voltage and ambient
temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR
influence.
5. In case of the output capacitor more than CL=22μF is used, ringing of input current occurs when rising time.
6. VIN and CE should be applied at least 10μs after the bias voltage VBIAS reaches the requested voltage.
If VIN and CE are applied within 10μs, inrush current like 1A may occurs.
■NOTE ON USE
■OPERATIONAL EXPLANATION (Continued)
14/33
XC6601 Series
Circuit ①
Circuit ②
Circuit ③
■TEST CIRCUITS
* For the timing chart, please refer to page 12 <Soft-Start Function>.
15/33
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS
（1） Output Voltage vs. Output Current
XC6601B071MR
0.0
0.2
0.4
0.6
0.8
0 100 200 300 400 500 600 700
Output Current: IOUT(mA)
Output Voltage: VOUT
(V)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.0V
XC6601B121MR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 100 200 300 400 500 600 700
Output Current: IOUT(mA)
Output Voltage: VOUT
(V)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.5V
XC6601B181MR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 100 200 300 400 500 600 700
Output Current: IOUT(mA)
Output Voltage: VOUT
(V)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=2.1V
XC6601B071MR
0.0
0.2
0.4
0.6
0.8
0 100 200 300 400 500 600 700
Output Current: IOUT(mA)
Output Voltage: VOUT
(V)
VIN=1.0V
VIN=1.2V
VIN=1.5V
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, Ta=25℃
XC6601B121MR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 100 200 300 400 500 600 700
Output Current: IOUT(mA)
Output Voltage: VOUT
(V)
VIN=1.3V
VIN=1.5V
VIN=1.8V
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, Ta=25℃
XC6601B181MR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 100 200 300 400 500 600 700
Output Current: IOUT(mA)
Output Voltage: VOUT
(V)
VIN=1.9V
VIN=2.1V
VIN=2.3V
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, Ta=25℃
16/33
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS
(
Continued
)
（2） Output Voltage vs. Bias Voltage
XC6601x071
0.5
0.6
0.7
0.8
0.9
1.7 1.9 2.1 2.3 2.5
Bias Voltage: V
BIAS
(V)
Output Voltage: V
OUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
IN
=1.0V, Ta=25℃
XC6601x121
1.0
1.1
1.2
1.3
1.4
1.7 1.9 2.1 2.3 2.5
Bias Voltage: V
BIAS
(V)
Output Voltage: V
OUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
IN
=1.5V, Ta=25℃
XC6601x181
1.6
1.7
1.8
1.9
2.0
1.8 2 2.2 2.4 2.6 2.8 3
Bias Voltage: V
BIAS
(V)
Output Voltage: V
OUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
IN
=2.1V, Ta=25℃
XC6601x071
0.5
0.6
0.7
0.8
0.9
2.5 3 3.5 4 4.5 5 5.5 6
Bias Voltage: V
BIAS
(V)
Output Voltage: V
OUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
IN
=1.0V, Ta=25℃
XC6601x121
1.0
1.1
1.2
1.3
1.4
2.5 3 3.5 4 4.5 5 5.5 6
Bias Voltage: V
BIAS
(V)
Output Voltage: V
OUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
IN
=1.5V, Ta=25℃
XC6601x181
1.6
1.7
1.8
1.9
2.0
3 3.5 4 4.5 5 5.5 6
Bias Voltage: V
BIAS
(V)
Output Voltage: V
OUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
IN
=2.1V, Ta=25℃
17/33
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(3) Output Voltage vs. Input Voltage
XC6601x071
0.5
0.6
0.7
0.8
0.9
0.5 0.6 0.7 0.8 0.9
Bias Voltage: VBIAS(V)
Output Voltage: VOUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic
)
VBIAS=3.6V, Ta=25℃
XC6601x121
1.0
1.1
1.2
1.3
1.4
1 1.1 1.2 1.3 1.4
Bias Voltage: VBIAS(V)
Output Voltage: VOUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic
)
VBIAS=3.6V, Ta=25℃
XC6601x181
1.6
1.7
1.8
1.9
2.0
1.6 1.7 1.8 1.9 2
Bias Voltage: VBIAS(V)
Output Voltage: VOUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic
)
VBIAS=3.6V, Ta=25℃
XC6601x071
0.5
0.6
0.7
0.8
0.9
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
Bias Voltage: VBIAS(V)
Output Voltage: VOUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
CIN=CBIAS=1. 0μF(cer amic), CL=4.7μF(ceramic
)
VBIAS=3.6V, Ta=25℃
XC6601x121
1.0
1.1
1.2
1.3
1.4
1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
Bias Voltage: VBIAS(V)
Output Voltage: VOUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
CIN=CBIAS=1. 0μF(cer amic), CL=4.7μF(ceramic
)
VBIAS=3.6V, Ta=25℃
XC6601x181
1.6
1.7
1.8
1.9
2.0
2 2.2 2.4 2.6 2.8 3
Bias Voltage: VBIAS(V)
Output Voltage: VOUT
(V)
IOUT=0mA
IOUT=30mA
IOUT=100mA
CIN=CBIAS=1. 0μF(cer amic), CL=4.7μF(ceramic
)
VBIAS=3.6V, Ta=25℃
18/33
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
（4）Dropout Voltage vs. Output Current
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
A value of the dropout voltage is determined by the value of the Vgs.
XC6601B121MR (Vgs
(*1)
=1.8V)
0
100
200
300
400
0 100 200 300 400
Output Current: I
OUT
(mA)
Dropout Voltage: Vdif(mV)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.0V
XC6601B121MR (Vgs
(*1)
=2.1V)
0
100
200
300
400
0 100 200 300 400
Output Current: I
OUT
(mA)
Dropout Voltage: Vdif(mV)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.3V
XC6601B121MR (Vgs
(*1)
=2.4V)
0
100
200
300
400
0 100 200 300 400
Output Current: I
OUT
(mA)
Dropout Voltage: Vdif(mV)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V
XC6601B121MR (Vgs
(*1)
=3.0V)
0
100
200
300
400
0 100 200 300 400
Output Current: I
OUT
(mA)
Dropout Voltage: Vdif(mV)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=4.2V
XC6601B121MR (Vgs
(*1)
=3.8V)
0
100
200
300
400
0 100 200 300 400
Output Current: I
OUT
(mA)
Dropout Voltage: Vdif(mV)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=5.0V
XC6601B121MR
0
50
100
150
200
250
300
0 100 200 300 400
Output Current: IOUT(mA)
Dropout Voltage: Vdif(mV)
VBIAS=3.0V
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2V
VBIAS=5.0V
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
Ta=25℃
19/33
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(5) Supply Bias Current vs. Bias Voltage (6) Supply Input Current vs. Input Voltage
XC6601x071
0
10
20
30
40
0123456
Bias Voltage: V
BIAS
(V)
Supply Bias Current: I
BIAS
(μA)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
IN
=1.0V
XC6601x121
0
10
20
30
40
0123456
Bias Voltage: V
BIAS
(V)
Supply Bias Current: I
BIAS
(μA)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
IN
=1.5V
XC6601x071
0.0
0.5
1.0
1.5
2.0
0 0.5 1 1.5 2 2.5 3
Input Voltage: V
IN
(V)
Supply Input Current: I
IN
(μA)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V
XC6601x121
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 0.5 1 1.5 2 2.5 3
Input Voltage: V
IN
(V)
Supply Input Current: I
IN
(μA)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V
XC6601x181
0
10
20
30
40
0123456
Bias Voltage: V
BIAS
(V)
Supply Bias Current: I
BIAS
(μA)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
IN
=2.1V
XC6601x181
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 0.5 1 1.5 2 2.5 3
Input Voltage: V
IN
(V)
Supply Input Current: I
IN
(μA)
Ta=-40℃
Ta=25℃
Ta=85℃
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V
20/33
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(7) Output Voltage vs. Ambient Temperature (8) Supply Bias Current vs. Ambient Temperature
XC6601x071
0.67
0.68
0.69
0.70
0.71
0.72
0.73
-50 -25 0 25 50 75 100
Ambient Temperature: Ta(℃)
Output Voltage: V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=100mA
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.0V
XC6601x121
1.17
1.18
1.19
1.20
1.21
1.22
1.23
-50 -25 0 25 50 75 100
Ambient Temperature: Ta(℃)
Output Voltage: V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=100mA
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.5V
XC6601x181
1.77
1.78
1.79
1.80
1.81
1.82
1.83
-50 -25 0 25 50 75 100
Ambient Temperature: Ta(℃)
Output Voltage: V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=100mA
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=2.1V
XC6601x071
15
20
25
30
35
40
-50 -25 0 25 50 75 100
Ambient Temperature: Ta(℃)
Supply Bias Current: IBI AS(μA)
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.0V
XC6601x121
15
20
25
30
35
40
-50 -25 0 25 50 75 100
Ambient Temperature: Ta(℃)
Supply Bias Current: IBI AS(μA)
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.5V
XC6601x181
15
20
25
30
35
40
-50 -25 0 25 50 75 100
Ambient Temperature: Ta(℃)
Supply Bias Current: IBI AS(μA)
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=2.1V
21/33
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(9) Supply Input Current vs. Ambient Temperature
XC6601x071
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100
Ambient Temperature: Ta(℃)
Supply Input Current: I
IN
(μA)
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.0V
XC6601x121
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100
Ambient Temperature: Ta(℃)
Supply Input Current: I
IN
(μA)
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.5V
XC6601x181
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100
Ambient Temperature: Ta(℃)
Supply Input Current: I
IN
(μA)
C
IN
=C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=2.1V
22/33
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(10) Bias Transient Response
XC6601x071
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Time (40usec/div)
Output Voltage V
OUT
(V)
-1
0
1
2
3
4
5
Bias Voltage V
BIAS
(V)
Bias Voltag e
Output Voltage
C
IN
=1.0μF(ceramic), C
BIAS
=0μF(ceramic), C
L
=4.7μF(ceramic)
V
IN
=1.0V, I
OUT
=30mA, tr=tf=5.0μsec, Ta=25℃
XC6601x121
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Time (40usec/div)
Output Voltage V
OUT
(V)
-1
0
1
2
3
4
5
Bias Voltage V
BIAS
(V)
Bias Voltag e
Output Voltage
C
IN
=1.0μF(ceramic), C
BIAS
=0μF(ceramic), C
L
=4.7μF(ceramic)
V
IN
=1.5V, I
OUT
=30mA, tr=tf=5.0μsec, Ta=25℃
XC6601x181
1.6
1.7
1.8
1.9
2.0
2.1
2.2
Time (40usec/div)
Output Voltage V
OUT
(V)
-1
0
1
2
3
4
5
Bias Voltage V
BIAS
(V)
Bias Voltag e
Output Voltage
C
IN
=1.0μF(ceramic), C
BIAS
=0μF(ceramic), C
L
=4.7μF(ceramic)
V
IN
=2.1V, I
OUT
=30mA, tr=tf=5.0μsec, Ta=25℃
XC6601x071
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Time ( 40usec/div)
Output Voltage V
OUT
(V)
-1
0
1
2
3
4
5
Bias Voltage V
BIAS
(V)
Bias Voltag e
Output Voltage
C
IN
=1.0μF(ceramic), C
BIAS
=0μF(ceramic), C
L
=4.7μF(ceramic)
V
IN
=1.0V, I
OUT
=200mA, tr =tf=5.0μsec, Ta=25℃
XC6601x121
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Time ( 40usec/div)
Output Voltage V
OUT
(V)
-1
0
1
2
3
4
5
Bias Voltage V
BIAS
(V)
Bias Voltag e
Output Voltag e
C
IN
=1.0μF(ceramic), C
BIAS
=0μF(ceramic), C
L
=4.7μF(ceramic)
V
IN
=1.5V, I
OUT
=200mA, tr =tf=5.0μsec, Ta=25℃
XC6601x181
1.5
1.6
1.7
1.8
1.9
2.0
2.1
Time ( 40usec/div)
Output Voltage V
OUT
(V)
-1
0
1
2
3
4
5
Bias Voltage V
BIAS
(V)
Bias Voltag e
Output Voltag e
C
IN
=1.0μF(ceramic), C
BIAS
=0μF(ceramic), C
L
=4.7μF(ceramic)
V
IN
=2.1V, I
OUT
=200mA, tr =tf=5.0μsec, Ta=25℃
Time (40μs / div) Time (40μs / div)
Time (40μs / div) Time (40μs / div)
Time (40μs / div) Time (40μs / div)
23/33
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(11) Input Transient Response
XC6601x071
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Time (20usec/di v)
Output Vol tage V
OUT
(V)
-3
-2
-1
0
1
2
3
Input Voltage V
IN
(V)
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=30mA, tr = tf=5.0μsec, Ta=25℃
Input Voltag e
Output Vol tag e
XC6601x121
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Time (20usec/di v)
Output Voltage V
OUT
(V)
-2
-1
0
1
2
3
4
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=30mA, tr = tf=5.0μsec, Ta=25℃
XC6601x181
1.6
1.7
1.8
1.9
2.0
2.1
2.2
Time (20usec/di v)
Output Vol tage V
OUT
(V)
-1
0
1
2
3
4
5
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=30mA, tr = tf=5.0μsec, Ta=25℃
XC6601x071
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Time (20usec/di v)
Output Vol tage V
OUT
(V)
-3
-2
-1
0
1
2
3
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=200mA, tr =tf=5.0μsec, Ta=25℃
XC6601x121
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Time (20usec/di v)
Output Vol tage VR OU T(V)
-2
-1
0
1
2
3
4
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=200mA, tr =tf=5.0μsec, Ta=25℃
XC6601x181
1.6
1.7
1.8
1.9
2.0
2.1
2.2
Time (20usec/di v)
Output Vol tage V
OUT
(V)
-1
0
1
2
3
4
5
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=200mA, tr =tf=5.0μsec, Ta=25℃
Time (20μs / div) Time (20μs / div)
Time (20μs / div) Time (20μs / div)
Time (20μs / div) Time (20μs / div)
24/33
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(12) Load Transient Response
XC6601B121MR
0.4
0.6
0.8
1.0
1.2
1.4
Time (45usec/div)
Output Voltage V OUT(V)
0
100
200
300
400
500
Output Cur r ent IOUT(mA)
Output Current
Output Voltage
10mA
100mA
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN =1.5V, tr=tf=5.0μsec, Ta=25℃
XC6601B071MR
-0.1
0.1
0.3
0.5
0.7
0.9
Time (45usec/div)
Output Voltage V OUT(V)
0
100
200
300
400
500
Output Cur rent IOUT(mA)
Output Current
Output Voltage
10mA
100mA
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN =1.0V, tr=tf=5.0μsec, Ta=25℃
XC6601B071MR
-0.1
0.1
0.3
0.5
0.7
0.9
Time ( 45usec/div)
Output Voltage V OUT(V)
0
100
200
300
400
500
Output Cur r ent IOUT(mA)
Output Cur r ent
Output Voltag e
10mA
200mA
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN =1.0V, tr=tf=5.0μsec, Ta=25℃
XC6601B121MR
0.4
0.6
0.8
1.0
1.2
1.4
Time ( 45usec/div)
Output Voltage V OUT(V)
0
100
200
300
400
500
Output Cur r ent IOUT(mA)
Output Cur r ent
Output Voltage
10mA
200mA
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN =1.5V, tr=tf=5.0μsec, Ta=25℃
XC6601B181MR
1.0
1.2
1.4
1.6
1.8
2.0
Time (45usec/div)
Output Voltage V OUT(V)
0
100
200
300
400
500
Output Cur r ent IOUT(mA)
Output Current
Output Voltage
10mA
100mA
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN =2.1V, tr=tf=5.0μsec, Ta=25℃
XC6601B181MR
1.0
1.2
1.4
1.6
1.8
2.0
Time ( 45usec/div)
Output Voltage V OUT(V)
0
100
200
300
400
500
Output Cur r ent IOUT(mA)
Output Cur r ent
Output Voltage
10mA
200mA
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN =2.1V, tr=tf=5.0μsec, Ta=25℃
Time (45μs / div) Time (45μs / div)
Time (45μs / div) Time (45μs / div)
Time (45μs / div) Time (45μs / div)
25/33
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(13) CE Rising Response Time
XC6601x071
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Time (100usec/div)
Output Vol tage V OU T(V)
-2
-1
0
1
2
3
4
CE Input Voltage V CE
(V)
CE Input Voltag e
Output Voltag e
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN =1.0V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
XC6601x121
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Time (100usec/div)
Output Vol tage V OUT(V)
-2
-1
0
1
2
3
4
CE Input Vol tage V CE
(V)
CE Input Voltag e
Output Vol tag e
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN =1.5V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
XC6601x181
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Time (100usec/div)
Output Vol tage V OU T(V)
-2
-1
0
1
2
3
4
CE Input Voltage V CE
(V)
CE Input Voltag e
Output Vol tag e
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN =2.1V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25℃
XC6601x071
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Time (100usec/div)
Output Vol tage V OU T(V)
-2
-1
0
1
2
3
4
CE Input Voltage V CE
(V)
CE Input Vol tag e
Output Voltage
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN =1.0V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
XC6601x121
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Time (100usec/div)
Output Vol tage V OUT(V)
-2
-1
0
1
2
3
4
CE Input Vol tage V CE
(V)
CE Input Vol tag e
Output Voltag e
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN =1.5V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
XC6601x181
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Time (100usec/div)
Output Vol tage V OU T(V)
-2
-1
0
1
2
3
4
CE Input Voltage V CE
(V)
CE Input Voltage
Output Voltag e
CIN =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN =2.1V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25℃
Time (100μs / div) Time (100μs / div)
Time (100μs / div) Time (100μs / div)
Time (100μs / div) Time (100μs / div)
26/33
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(14) VIN Rising Response Time
XC6601x071
0.0
0.5
1.0
1.5
2.0
2.5
Time (100usec/div)
Output Vol tage V
OUT
(V)
-2
-1
0
1
2
3
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=30mA, tr=tf=5.0μsec, Ta=25℃
XC6601x121
0.0
0.5
1.0
1.5
2.0
2.5
Time (100usec/div)
Output Vol tage V
OUT
(V)
-2
-1
0
1
2
3
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=30mA, tr=tf=5.0μsec, Ta=25℃
XC6601x181
0.0
0.5
1.0
1.5
2.0
2.5
Time (100usec/div)
Output Vol tage V
OUT
(V)
-2
-1
0
1
2
3
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=30mA, tr=tf=5.0μsec, Ta=25℃
XC6601x071
0.0
0.5
1.0
1.5
2.0
2.5
Time (100usec/div)
Output Vol tage V
OUT
(V)
-2
-1
0
1
2
3
Input Voltage V
IN
(V)
Input Voltag e
Output Vol tag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=200mA, tr=tf= 5.0μsec, Ta=25℃
XC6601x121
0.0
0.5
1.0
1.5
2.0
2.5
Time (100usec/div)
Output Vol tage V
OUT
(V)
-2
-1
0
1
2
3
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=200mA, tr=tf= 5.0μsec, Ta=25℃
XC6601x181
0.0
0.5
1.0
1.5
2.0
2.5
Time (100usec/div)
Output Vol tage V
OUT
(V)
-2
-1
0
1
2
3
Input Voltage V
IN
(V)
Input Voltag e
Output Voltag e
C
IN
=0.1μF(ceramic), C
BIAS
=1.0μF(ceramic), C
L
=4.7μF(ceramic)
V
BIAS
=3.6V, I
OUT
=200mA, tr=tf= 5.0μsec, Ta=25℃
Time (100μs / div) Time (100μs / div)
Time (100μs / div) Time (100μs / div)
Time (100μs / div) Time (100μs / div)
27/33
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(15) Bias Voltage Ripple Rejection Rate (16) Input Voltage Ripple Rejection Rate
XC6601x071
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
VBIAS_PSRR(dB)
C
BIAS
=0μF, C
IN
=1. 0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V
DC
+0.2Vp-p
AC
, V
IN
=1.0V, I
OUT
=30mA, Ta=25℃
XC6601x121
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
VBIAS_PSRR(dB)
C
BIAS
=0μF, C
IN
=1. 0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V
DC
+0.2Vp-p
AC
, V
IN
=1.5V, I
OUT
=30mA, Ta=25℃
XC6601x181
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
VBIAS_PSRR(dB)
C
BIAS
=0μF, C
IN
=1. 0μF(ceramic), C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V
DC
+0.2Vp-p
AC
, V
IN
=2.1V, I
OUT
=30mA, Ta=25℃
XC6601x071
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
VIN_PSRR
(dB)
C
BIAS
=1.0μF(ceramic), C
IN
=0μF, C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.0V
DC
+0.2Vp-p
AC
, IOUT=30mA, Ta=25℃
XC6601x121
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
VIN_PSRR
(dB)
C
BIAS
=1.0μF(ceramic), C
IN
=0μF, C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=1.5V
DC
+0.2Vp-p
AC
, IOUT=30mA, Ta=25℃
XC6601x181
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
VIN_PSRR
(dB)
C
BIAS
=1.0μF(ceramic), C
IN
=0μF, C
L
=4.7μF(ceramic
)
V
BIAS
=3.6V, V
IN
=2.1V
DC
+0.2Vp-p
AC
, IOUT=30mA, Ta=25℃
28/33
XC6601 Series
●USP-6C
●SOT-25 ●SOT-89-5
(
UNIT : mm
)
2.4
0.45
2
34
5
61
0.45
1.0
0.050.05
2.3
0.35
2
34
5
61
0.35
0.15 0.15
0.8
・はんだ厚:120μm (参考)
（）< USP-6C 推奨マウントパッド寸法 参照 >
（）< USP-6C 推奨メタルマスクデザイン 参照 >
(
UNIT : mm
)
(
UNIT : mm
)
1.3 MAX
2.8±0.2
+0.2
-0.1
1.1±0.1 1.6
0.2 MIN
■PACKAGING INFORMATION
●USP-6C Reference Metal Mask Design
●USP-6C Reference Pattern Layout
Thickness of solder paste: 120μm (reference)
*The side of pins are not gilded, but
nickel is used: Sn 5～15μm
29/33
XC6601
Series
● USP-6C Power Dissipation
Board Mount (Tj max = 125℃)
Ambient Temperature（℃） Power Dissipation Pd（mW）Thermal Resistance (℃/W)
25 1000
85 400
100.00
て
Pd-Ta特性グラフ
0
200
400
600
800
1000
1200
25 45 65 85 105 125
周辺温度Ta（℃）
許容損失Pd（mW）
■PACKAGING INFORMATION (Continued)
Power dissipation data for the USP-6C is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
1. Measurement Condition (Reference data)
Condition: Mount on a board
Ambient: Natural convection
Soldering: Lead (Pb) free
Board: Dimensions 40 x 40 mm (1600 mm2 in one side)
Copper (Cu) traces occupy 50% of the board area
In top and back faces
Package heat-sink is tied to the copper traces
Material: Glass Epoxy (FR-4)
Thickness: 1.6 mm
Through-hole: 4 x 0.8 Diameter
Evaluation Board (Unit: mm)
2. Power Dissipation vs. Ambient Temperature
Pd vs. Ta
Ambient Temperature Ta (℃)
Power Dissipation Pd (mW)
30/33
XC6601 Series
● SOT-25 Power Dissipation
Board Mount (Tj max = 125℃)
Ambient Temperature（℃） Power Dissipation Pd（mW）Thermal Resistance (℃/W)
25 600
85 240
166.67
評価基板レイアウト（単位：mm）
Pd-Ta特性グラフ
0
100
200
300
400
500
600
700
25 45 65 85 105 125
周辺温度Ta（℃）
許容損失Pd（mW）
■PACKAGING INFORMATION (Continued)
Power dissipation data for the SOT-25 is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
2. Measurement Condition (Reference data)
Condition: Mount on a board
Ambient: Natural convection
Soldering: Lead (Pb) free
Board: Dimensions 40 x 40 mm (1600 mm2 in one side)
Copper (Cu) traces occupy 50% of the board area
In top and back faces
Package heat-sink is tied to the copper traces
(Board of SOT-26 is used.)
Material: Glass Epoxy (FR-4)
Thickness: 1.6 mm
Through-hole: 4 x 0.8 Diameter
Evaluation Board (Unit: mm)
2. Power Dissipation vs. Ambient Temperature
Pd vs. Ta
Ambient Temperature Ta (℃)
Power Dissipation Pd (mW)
31/33
XC6601
Series
● SOT-89-5 Power Dissipation
Board Mount (Tj max = 125℃)
Ambient Temperature（℃） Power Dissipation Pd（mW）Thermal Resistance (℃/W)
25 1300
85 520
76.92
て
Pd-Ta特性グラフ
0
200
400
600
800
1000
1200
1400
25 45 65 85 105 125
周辺温度Ta（℃）
許容損失Pd（mW）
Power dissipation data for the SOT-89-5 is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
3. Measurement Condition (Reference data)
Condition: Mount on a board
Ambient: Natural convection
Soldering: Lead (Pb) free
Board: Dimensions 40 x 40 mm (1600 mm2 in one side)
Copper (Cu) traces occupy 50% of the board area
In top and back faces
Package heat-sink is tied to the copper traces
Material: Glass Epoxy (FR-4)
Thickness: 1.6 mm
Through-hole: 5 x 0.8 Diameter
Evaluation Board (Unit: mm)
2. Power Dissipation vs. Ambient Temperature
Pd vs. Ta
Ambient Temperature Ta (℃)
Power Dissipation Pd (mW)
■PACKAGING INFORMATION (Continued)
32/33
XC6601 Series
MARK PRODUCT SERIES
9 XC6601******
MARK OUTPUT VOLTAGE RANGE
A XC6601A*****
B XC6601B*****
MARK OUTPUT
VOLTAGE (V) MARK OUTPUT
VOLTAGE (V)
0 0.7 F 1.45
1 0.75 H 1.5
2 0.8 K 1.55
3 0.85 L 1.6
4 0.9 M 1.65
5 0.95 N 1.7
6 1.0 P 1.75
7 1.05 R 1.8
8 1.1 S -
9 1.15 T -
A 1.2 U -
B 1.25 V -
C 1.3 X -
D 1.35 Y -
E 1.4 Z -
■MARKING RULE
●SOT25, 89-5, USP6C
SOT25
123
54
① ② ③ ④ ⑤
SOT89-5
524
123
⑤
③①
④
②
④ ⑤
② ③①
USP6C
① represents product series
② represents type of regulators
③ represents output voltage
④,⑤ represents production lot number
01～09、0A～0Z、11･･･9Z、A1～A9、
AA･･･Z9、ZA～ZZ repeated
(G，I，J，O，Q，W excluded)
*No character inversion used.
33/33
XC6601
Series
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
