Standard Power MOSFETs IRF220, IRF221, IRF222, IRF223 1S g x 2 8 z Vas = 10V g 1RF220, 5 z 3 g 0 : z 5 = 3 4 3 = 3 v ew 3 3 Ll Vas = 20V z . pane) = = 05 5 = 2 & s 2 DS(on) MEASURED WITH CURRENT PULSE OF = 2.0 us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 xs PULSE IS MINIMAL.) . i 1 . 0 0 5 19 15 20 2B 50 18 100 125 150 Ip, ORAIN CUARENT (AMPERES) Tr, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 40 T 7 bo : i 36 t +4 I = 2 + a . 5 < = 25 L~-4.---_f--- 4 eo & e = fb ae 2 a = = 18 2 1 a 3 ' ~ 10 | 4... + * +4 | 1 5 | 0 20 40 60 80 100 120140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve VARY tp TO OBTAIN REQUIRED PEAK 1, ty + a Ey 7 O.58Vps5 I ST Vg + 0.7584, Vgs :20V c Oss aft Fig. 15 Clamped Inductive Test Circuit Fig. 16 Clamped inductive Waveforms OuT N Vos (SOLATEO CURRENT ADJUST RL QE REGULATOR SUPPLY) TQ OBTAIN SPECIFIED ip $ Ay 1 SAME TPE i er Y oa 50 KS PULSE ERY GENERATOR ecco TO SCOPE 0.0182 HIGH FREQUENCY SHUNT . . | 15 mA Fig. 17 Switching Time Test Circuit 0 -- -Vps 6 L 1 CURRENT = {URAENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 3-78Standard Power MOSFETs File Number 1568 IRF230, IRF231, IRF232, IRF233 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8.0A and 9.0A, 150V-200V fos(on) = 0.4.Q and 0.6.Q Features: & SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics High input impedance @ Majority carrier device The IRF230, IRF231, IRF232 and IRF233 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- sistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. N-CHANNEL ENHANCEMENT MODE $ 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION ORAIN SOURCE (FLANGE) GATE : + 92CS-37801 The IRF-types are supplied in the JEDEC TO-204AA steel package. JEDEC TO-204AA Absolute Maximum Ratings Parameter 1RF230 1RF231 IRF232 (RF233 Units Vos Drain - Source Voltage () 200 150 200 180 Vv Vocr Drain - Gate Voltage (gg = 20KM) 200 150 200 150 Ip @ Tc = 28C _ Continuous Drain Current 9.0 3.0 8.0 8.0 A Ip @Te = 100C Continuous Orain Current 6.0 6.0 5.0 5.0 A 'om Pulsed Drain Current @ 36 36 32 32 A vi Gate - Source Voltage 20 v Pp @Tc = 25C Max. Power Dissipation 75 (See Fig. 14} w Linear Derating Factor 0.6 (See Fig. 14) Ww7c 1M Inductive Current, Clamped (See Fig. 15 and 16)L = 100uH A 36 rl 36 I 32 | 32 Ty Operating Junction and . Tstg Storage Temperature Range 55 to 180 c Lead Temperature 300 (0.063 in. {1.6mm) from case for 10s) c 3-79Standard Power MOSFETs IRF230, IRF231, IRF232, IRF233 Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. Units Test Conditions BVpss Drain - Source Breakdown Voltage IRF230 _ {F232 200 _ - v Vos = OV IRF231 . IRF233 150 - - v Ip = 250pA vi hy Gate Threshold Voltage ALL 2.0 7 4.0 v Vos = Vas. '!p = 250A GSith) OS GS-"D oss Gate-Source Leakage Forward ALL - - 100 nA Ves = 20V ogg _ Gate-Source Leakage Reverse ALL = = j-100 nA Veg = -20V loss Zero Gate Voltage Drain Current ALL = = 250 vA Vos = Max. Rating. Vgg = OV " = = 1000 uA Vps = Max. Rating x 0.8, Vgg = OV, Tc = 125C Ipton} _On-State Drain Current @ 1RF230 | gg _ _ A IRF231 . Vos?! xR, Vag = 10V DS ? 'Dion) * DSion} max.: GS. tRF232 [| og _ _ A IRF233 . RpSion) Static Drain-Source On-State 1RF230 Resistance war2a1 | ~ [O25] o4 | 8 Vg = 10V.In = 5.04 F232 | | oa | oo 0 6s Smee IRF233 . . ots Forward Transconductance @ ALL 3.0 4.8 ~ Sip Vos "pion * Foston) max. '(p = 3-04 Ciss input Capacitance ALL _ 600 - pF V@s = OV. Vpg = 25V. f = 1.0 MHz Coss Output Capacitance ALL = 250 _ pF See Fig. 10 Criss Reverse Transfer Capacitance ALL = 80 = pF tajon) _Turn-On Delay Time AU = [ 30 ns Vop = 90V. Ip = 5.0A,Z, = 150 ty Rise Time ALL - - 50. ns See Fig. 17 tajoff) __ Turn-Off Delay Time ALL - - 50 ns (MOSFET switching times are essentially ty Fall Time ALL _ _ 40 ns independent of operating temperature.) a Total Gate Charge Vog 2 10V, Ip = 124A. V, = 0.8 Max, Rating. 9 _ Gs D os (Gate-Source Plus Gate-Drain) ALL 19 | 30 | ne See Fig. 18 for test circuit. (Gate charge is essentially Ags Gate-Source Charge ALL _ 10 15 nc independent of operating temperature.) Qoa Gate-Drain (Miller} Charge ALL - 9.0 15 ac lp Internal Drain Inductance ALL _ 5.0 - nH Measured between Modified MOSFET the contact screw on symbol showing the header that is claser to internal device source and gate pins inductances. and center of die. B Ls Internat Source Inductance ALL ~ 12.6 - oH Measured from the LD source pin, 6mm (0.25 in.) from header G and source bonding us pad. s Thermal Resistance Ric _Junction-to-Case ALL - = 1.67 | C/W Rincs _Case-to-Sink ALL = 0.1 = oC WW Mounting surface flat, smooth, and greased. Rips _Junction-to-Ambient ALL = - 30 c/w Free Air Operation Source-Drain Diode Ratings and Characteristics Ig Continuous Source Current \RF230 _ _ 3.0 A Modified MOSFET symbol (Body Diode} IRF231 ~ . showing the integral TRFD32 reverse P-N junction rectifier. o inr233 | | ~ | | 4 At Ign Pulse Source Current IRF230 _ ol (Body Diode) @ IRF231 | 7 36 A Geox IRF232 s IRF233 | | a V5p _ Diode Forward Voitage @ IRF230 _ a < _ iRF231 - 2.0 v To = 25C, ig = 9.04, Vgg = OV IRF232 _ . _ IRF233 - - | 18 v Te = 25C, Ig = 8.0A, Vgg = OV ter Reverse Recovery Time ALL = 450 - ns Ty = 150C. Ip = 9.0A, dip/dt = 100A/ys QrR _ Reverse Recovered Charge ALL ~ 2.0 = ac Ty = 150C, i, = 9.0A, die/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. @Ty = 25C to 180C. @Pulse Test: Pulse width < 300us, Duty Cycle << 2%. @ Repetitive Rating: Purse width limted by max. junction temperature. See Transient Thermat Impedance Curve (Fig. 5). 3-8080 ys PULSE TEST 5 a ig, DRAIN CURRENT (AMPERES} o 20 40 60 80 Vps. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics (fg, ORAIN CURRENT {AMPERES} 0 1 2 3 4 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics os zs a @ MAL IMPEDANCE (PER UNIT} 2 Zrnuc lt Fasc MoRM A zeO EFFECTIVE TRANSIENT ay 0.05 = THERMAL [MPEDANCE} 0.02 091 ws 2 5 ot 2 5 wd 100 Ip, ORAIN CURRENT (AMPERES) 10-2 Standard Power MOSFETs IRF230, IRF231, IRF232, IRF233 BO us PULSE ; Vos > 'o(on} * Boson) max. tp. ORAIN CURRENT (AMPERES) 0 1 2 3 4 5 6 7 Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics AREA IS LIMITED iRF230, 1 3 Te = 250C Ty= 150C MAX. Rthuc = 1 SINGLE PULSE Vo 2 5 10 20 50 500 Vpg. ORAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area >| 1. OUTY FACTOR, D = zt . 2. PER UNIT BASE = Ayyyc = 1.67 DEG. CW. 3. Ty Te = Pom Zinscltl- 2 5 gt 2 5 1902 5 10 t1, SQUARE WAVE PULSE DURATION (SECONDS) Effective T Thermal | di. t0-Case Vs. Pulse DurationStandard Power MOSFETs IRF230, IRF231, IRF232, IRF233 Vos > ian) * 9 2 4 6 a at Ip, DRAIN CURRENT (AMPERES) Fig. 6 Typicat Transconductance Vs. Drain Current 1.05 SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ass Ons BVpgs, DRAINTO Ors -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature 2000 <0 f= 1MHz tol 1600 Cian = Cge + Cog, Cots SHORTED Cong = Cod = Cosy = Cds + C = 1200 MG on 3 tia < 5 5 < = a o 400 0 0 20 30 a0 50 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Vottage 3-82 3 ~ o x 5 Fry = 180C ipg. REVERSE ORAIN CURRENT (AMPERES) nN Ty = 250C 9 1 2 3 4 Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage 22 - o 06 Rosin}. ORAIN-TO-SQURCE ON RESISTANCE (NORMALIZED) a2 -40 Q 40 80 120 Ty, JUNCTION TEMPERATURE (9C} Fig. 9 Normalized On-Resistance Vs. Temperature Vos = 40 zB = 100v | Vpg = 160V, (F230, 5 wn Vgs. GATE TO SOURCE VOLTAGE (VOLTS) ip = 120 FOR TEST CIRCUIT SEE FIGURE 18 a 8 16 24 32 40 Oy. TOTAL GATE CHARGE int) Fig. 11 Typical Gate Charge Vs. Gate-to-Source VoltageRoston): ORAIN-TO-SOURCE ON RESISTANCE (OHMS) WITH CURRENT OF us INITIAL Ty = 25C, (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) 0 10 20 30 Ip, DRAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current 80 Ww 60 a 30 Pp, POWER DISSIPATION (WATTS) 20 w 0 20 40 Tc, CASE TEMPERATURE (C) Ip. DRAIN CURRENT (AMPERES} Fig. Standard Power MOSFETs {IRF230, IRF231, IRF232, IRF233 - 1RF230, 231 50 75 100 125 180 Te, CASE TEMPERATURE (0C) 13 Maximum Drain Current Vs. Case Temperature 120 140 Fig. 14 Power Vs. Temperature Derating Curve VARY t, TO OBTAIN REQUIRED PEAK I Fy out Ves 20V 4 Vos Fig. 15 Clamped Inductive Test Circuit Vpp = 90V 18.58: PRE = 1 kHz vo tps tas TO SCOPE r----- | | | ' 20v Le Fig. 17 Switching Time Test Circuit wv BATTERY *Vos CURRENT {iSQLATED REGULATOR SUPPLY} SAME TYPE AS OUT = 1 -Vos CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 3-83