NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS e LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit Collector-Emitter Voltage Voces Vv : BC237 50 Vv : BC238/239 30 Collector-Emitter Voltage VecEo : BC237 45 Vv : BC238/239 25 Vv Emitter-Base Voltage VEBo : BC237 6 Vv : BC238/239 5 Vv Collector Current (DC) le 100 mA Collector Dissipation Po 500 mw Junction Temperature Ty 150 C Storage Temperature Tsta -55 ~ 150 C 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage BV ceo lo=2mA, Ip=0 :BC237 45 Vv : BC238/239 25 Vv Emitter Base Breakdown Voltage BVeEBo le=ipA, Io=0 : BC237 6 Vv : BC238/239 5 Vv Collector Cut-off Current Ices : BC237 Vce=50V, |p=0 0.2 15 nA : BC238/239 Vce=30V, |p=0 0.2 15 nA DC Current Gain hee Vce=5V, lo=2mA 420 800 Collector-Emitter Saturation Voltage Vcr (sat) lo=10mA, Ip=0.5MA 0.07 0.2 Vv lc=100mMA, Ip=5mA 0.2 0.6 Vv Collector Base Saturation Voltage Vee (sat) lc=10mA, Ip=0.5mA 0.73 0.83 V Ilc=100MA, Ip=5mMA 0.87 1.05 Vv Base Emitter On Voltage Vee (on) Voe=5V, lo=2mA 0.55 0.62 0.7 Vv Current Gain Bandwidth Product fr Voce=3V, Ic=0.5mMA 85 MHz Voe=5V, Io=10MA 150 250 MHz Collector Base Capacitance Ccopo Vop=10V, f=1MHz 3.5 6 pF Emitter Base Capacitance CEBo Vep=0.5V, f=1MHz 8 pF Noise Figure : BC237/238 | NF Vce=5V, Ic=0.2mA, 2 10 dB : BC239 f=1KHz Re=2kohm 4 | aB : BC239 NF Voe=5V, Io=0.2MA 4 dB Re=2kohm, f=30~15KHz hre CLASSIFICATION Classification A B Cc Hee 120-220 180-460 380-800 errr Rev. B FAIRCHILD Ce SEMICONDUCTOR mw 1999 Fairchild Semiconductor CorporationBC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC ic(mA), COLLECTOR CURRENT 9 4 8 12 16 20 Vce(V), COLLECTOR-EMITTER VOLTAGE DC CURRENT GAIN 1000 100 hee,DC CURRENT GAIN 30 1 3 10 30 100 300 Ie(mA), COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE 1000 Ver(Sat), Voe(sathmV), SATURATION VOLTAGE 1 3 10 30 100 300 ic{mA), COLLECTOR CURRENT Ig(mA), COLLECTOR CURRENT tr(MHz}, CURRENT GAIN-BANDWIDTH PRODUCT ConfpF), CAPACITANCE TRANSFER CHARACTERISTIC 100 30 3 0.3 O41 0 0.2 0.4 0.6 0.8 1.0 1.2 Ver{V), BASE-EMITTER VOLTAGE CURRENT GAIN BANDWIDTH PRODUCT ot 0.3 1 3 30 100 le(mA}, COLLECTOR CURRENT OUTPUT CAPACITANCE 1 10 Vca(), COLLECTOR-BASE VOLTAGE 30 50 6100 300 1000 ee FAIRCHILD | SEMICONDUCTOR mwTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.