FACON 4SE D WM 3456203 O000012 4 MMFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0O| pack 931 diode/thyristor 12 Amp modules diode/thyristor pack 931 la Amp VpDRM leFsm/ IGT In per leg or HsmM RGK = 1k0 @ par bras VR Use Types VRRM 10 ms Case 25 C 125 C Fonction (v) (A) (ma) (uA) (mA) 12 A Tease = 60 C DY 37741931 50 150 40 100 3 DA 37741931 100 150 40 100 3 oe O08 37741931 200 150 40 100 3 9 9 OD 37741931 400 150 40 100 3 DF 37741931 600 150 40 100 3 DH 37 741931 800 150 40 100 3 CB-200 112A Tease = 60C DY 74137931 50 150 40 100 3 DA 74137931 100 150 40 100 3 DB 741/37 931 200 160 40 100 3 DD = 741/37 931 400 150 40 100 3 OF = 741(37 931 600 150 40 100 3 DH = 741137 931 800 180 40 100 3 12A Tease = 60C DY 741931 50 150 40 100 3 DA 741931 100 150 40 100 3 OB 741931 200 150 40 100 3 DD 741931 400 150 40 100 3 OF 741931 600 150 40 100 3 DH 741931 800 180 40 100 3 pack 931 diode 15 Ato 35A modules diode 931 15Aa35A Vraram | Yraus lg Max Fwd ldsm/ | ig per diode recom- on re- Voltage sm @VR mended sistive (a) Ta = 25 C Use Types max load Case surcharge} Ve lo 25 C | 125 C Fonction rsistive (Vv) (Vv) (A) (Vv) (A) (A) (uA) | (mA) 15A Tease = 60 C DY 37931 50 25 15 V1 75 300 100 1 DA 37931 100 50 15 11 75 300 100 1 DB 37931 200 80 15 14 756 300 100 1 DD 37931 400 180 15 4 7.5 300 100 1 OF 37931 600 250 16 1 75 300 100 1 OH 37931 800 380 18 11 75 300 100 1 OF 637931 1000 410 15 11 75 300 100 1 OL 37931 1200 440 15 11 75 300 100 1 25 A Tease = 60 C DY 39931 50 25 25 1.05 125 600 100 1 DA 39931 100 50 25 105 125 600 100 1 DB 39931 200 80 25 105 12.5 600 100 1 DD 39931 400 150 25 106 12.5 600 100 1 DF 39931 600 250 25 105 125 600 100 1 DH 39931 800 380 25 1.05 125 600 100 1 DJ 39931 1000 410 25 1.05 12.5 600 100 1 DL 39931 1200 440 25 1.05 12.5 600 100 1 8-236 | Le -FACON 45E D MM 3456203 0000013 & MEFCN 7-23-0/ FACON SEMICONDUCTEURS/ SEMICONDUCTORS VrRRM | VRMSs lg Max Fwd ldsm/ | IR per diode recom- on re- Voltage sm @ VR mended sistive {a) Ta = 25 C Use Types max load Case sur charge| Ve lo 25 C | 125 C Fonction rsistive (Vv) (Vv) (A) (v) (A) (A) (uA) | (mA) 35 A Tease = 55 C DY 40931 50 25 35 1 175 800 100 1 DA 40931 100 50 35 1 175 800 100 1 DB 40931 200 80 35 1 175 800 100 1 DD 40931 400 150 35 1 75 800 100 1 OF 40931 600 250 36 1 17.5 800 100 1 OH 40931 800 380 35 1 175 800 100 1 OJ 40931 1000 410 36 1 175 800 100 1 OL 40931 1200 440 35 1 175 800 100 1 CB-236 CB-200 635 CB-237 0.8 Lig 25 mox +4 | 3 { 14 max 1 rm O 741931 B 741931 12 35 mox Dimensions in millimeters CB-236 35 mo: 35 mox 26? r - ! ow 2? be = 25 mox - oo 1o4 a \ t - t D 37931 CB-335 CB-361 25 max 25 mox t-- > d 5 mox 4g* oO I~ ul 8 37741931 B 37741931 ASFACON 4SE D MM 3456203 0000014 8 MEFCN 723-0] FACON SEIVICONDUCTEURS/SEMICONDUCTORS pack 931 diode 30 Ato 70A modules diode 931 30A aT70A Vero | Vraes lg Max Fwd lasm/ | 'R per diode recom- on re- Voltage lism @VR mended sistive (a) Ta = 25 C Use Types max load Case sur charge| VE lo 25 C | 125 C Fonction rsistive (Vv) (Vv) (A) (Vv) (A) (A) (uA) | (mA) 30A Tease = 60C N/CY 37931 50 26 30 14 16 300 100 1 N/CA 37931 100 50 30 14 15 300 100 1 N/CB 37931 200 80 30 14 15 300 100 1 N/CD 37931 400 150 30 11 15 300 100 1 N/CF 37931 600 250 30 14 15 300 100 1 N/CH 37931 800 380 30 i1 15 300 100 1 N/CJ 37931 1000 410 30 14 15 300 100 1 N/CL 37931 1200 440 30 "41 15 300 100 1 50 A Tcase = 60 C N/CY 39931 50 25 50 1.06 25 600 100 1 N/CA 39931 100 50 50 105 25 600 100 1 N/CB 39931 200 80 50 105 25 600 100 1 N/CD 39931 400 160 50 106 25 600 100 1 N/CF 39931 600 250 50 1.05 25 600 100 1 N/CH 39931 800 380 50 105 2 600 100 1 N/CJ 39931 1000 410 50 106 26 600 100 1 N/CL 39931 1200 440 50 1.05 25 600 100 1 7OA Tcase = 55 C N/CY 40931 50 25 70 1 35 800 100 1 N/CA 40931 100 50 70 i 36 800 100 1 N/CB 40931 200 80 70 1 35 800 100 1 N/CD 40931 400 150 70 1 36 800 100 1 N/CF 40931 600 250 70 1 35 800 100 1 N/CH 40931 800 380 70 1 35 800 100 1 N/G) 40931 1000 410 70 1 35 800 100 1 N/CL 40931 1200 440 70 1 35 800 100 1 62 25 max - Zz Fr mm | iv vl | i. - N 37931 C 37931 13