All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 14 Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
0
5
10
15
20
25
30
35
40
-60
-55
-50
-45
-40
-35
-30
-25
-20
31 33 35 37 39 41 43 45 47 49
Efficiency (%)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 1.30 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
ACPR
Efficiency
IMD Up
IMD Low
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test–veried by design/characterization in Inneon test xture)
VDD = 30 V, IDQ = 1.3 A, POUT = 40 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps — 17.5 — dB
Drain Efciency hD — 29.5 — %
Adjacent Channel Power Ratio ACPR — –38 — dBc
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
Description
The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs
intended for use in multi-standard cellular power amplier applications
in the 2110 to 2170 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced packages with
slotted or earless anges. Manufactured with Inneon's advanced
LDMOS process, these devices provide excellent thermal perform-
ance and superior reliability.
PTFB211803EL
H-33288-6
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2170 MHz, 30 V
- Average output power = 40 W
- Linear Gain = 17.5 dB
- Efciency = 29.7%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 180 W
- Efciency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty ampliers
• Integrated ESD protection.
• Capable of handling 10:1 VSWR @ 30 V,
180 W (CW) output power
• Pb-free and RoHS compliant
PTFB211803FL
H-34288-4/2
Data Sheet 2 of 14 Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-carrier WCDMA Measurements (tested in Inneon test xture)
VDD = 30 V, IDQ = 1.3 A, POUT = 38 W average, ƒ1 = 2165 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth =
3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 16 17 — dB
Drain Efciency hD 28 29.5 — %
Intermodulation Distortion IMD — –32.5 –31.5 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W
Operating Gate Voltage VDS = 30 V, IDQ = 1.3 A VGS 2.3 3.0 3.3 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 180 W CW) RqJC 0.3 °C/W
Ordering Information
Type and Version Package Type Package Description Shipping
PTFB211803EL V1 H-33288-6 Slotted ange, single-ended Tray
PTFB211803EL V1 R250 H-33288-6 Slotted ange, single-ended Tape & Reel, 250 pcs
PTFB211803FL V2 H-34288-4/2 Earless ange, single-ended Tray
PTFB211803FL V2 R250 H-34288-4/2 Earless ange, single-ended Tape & Reel, 250 pcs
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 3 of 14 Rev. 05, 2010-11-10
0
10
20
30
40
15
16
17
18
19
33 35 37 39 41 43 45 47 49
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA 3GPP
V
DD
= 30 V, I
DQ
= 1.30 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Gain
Efficiency
Drain Efficiency (%)
-50
-40
-30
-20
-10
10
20
30
40
50
2080 2100 2120 2140 2160 2180 2200
IRL (dB) / ACP Up (dBc)
Frequency (MHz)
Single-carrier WCDMA, 3GPP Broadband
V
DD
= 30 V, I
DQ
= 1.30 A, P
OUT
= 47 dBm
Efficiency
IRL
ACP
Gain (dB) / Efficiency (%)
Gain
15
16
17
18
41 43 45 47 49 51 53
Power Gain (dB)
Output Power (dBm)
CW Performance
Gain vs. Output Power
V
DD
= 30 V, ƒ = 2170 MHz
I
DQ
= 1.80 A
I
DQ
= 0.90 A
I
DQ
= 1.30 A
0
5
10
15
20
25
30
35
40
-60
-55
-50
-45
-40
-35
-30
-25
-20
33 35 37 39 41 43 45 47 49
Drain Efficiency (%)
ACP (dBc)
Output Power (dBm)
Single-carrier WCDMA Drive-Up
V
DD
= 30 V, I
DQ
= 1.30 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
ACP Up
Efficiency
ACP Low
Typical Performance (data taken in a production test xture)
Data Sheet 4 of 14 Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
0
10
20
30
40
50
-65
-55
-45
-35
-25
-15
40 42 44 46 48 50 52 54
Efficiency (%)
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.30 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
Efficiency
IMD3
-50
-40
-30
-20
-10
15
25
35
45
55
2080 2100 2120 2140 2160 2180 2200
Frequency (MHz)
Two-tone Broadband Performance
V
DD
= 30 V, I
DQ
= 1.30 A, P
OUT
= 63 W
Gain
Efficiency
IRL
IMD3
Return Loss (dB) / IMD (dBc)
Gain (dB) / Efficiency (%)
0
10
20
30
40
50
15
16
17
18
19
20
40 42 44 46 48 50 52 54
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.30 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
Efficiency
Gain
-50
-40
-30
-20
41 43 45 47 49 51 53
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up at
Selected Frequencies
V
DD
= 30 V, I
DQ
= 1.30 A, tone spacing = 1 MHz
2170MHz
2140MHz
2110MHz
-50
-40
-30
-20
41 43 45 47 49 51 53
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up at
Selected Frequencies
VDD = 30 V, IDQ = 1.30 A, tone spacing = 1 MHz
2170MHz
2140MHz
2110MHz
Typical Performance (cont.)
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 5 of 14 Rev. 05, 2010-11-10
-70
-60
-50
-40
-30
-20
40 45 50 55
IMD (dBc)
Output Power, PEP (dBm)
Intermodulation Distortion
vs. Output Power
V
DD
= 30 V, I
DQ
= 1.30 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
3rd Order
7th
5th
15
25
35
45
55
15
16
17
18
19
41 43 45 47 49 51 53
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.30 A, ƒ = 2170 MHz
Efficiency
Gain
10
20
30
40
50
60
14
15
16
17
18
19
42 44 46 48 50 52
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.30 A, ƒ= 2170 MHz
Gain
Efficiency
+25°C
+85°C
–10°C
Typical Performance (cont.)
Data Sheet 6 of 14 Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
0.1
0.3
0.5
0.2
0.4
0.1
0.3
0
.5
0.
7
0.2
0.4
0.6
0.1
0.3
0.5
0
.7
0
.9
0
.2
0.4
0
.6
0.
8
1
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
0
.05
0
.40
0
.45
0
.0
5
0
.1
0
0
.4
5
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
nalized to 50 Ohms
1803efl Mar. 22, 2010 7:12:29 PM
Z Source
Z Load
fb211803efl-v1
2080 MHz
2080 MHz
MHz
2200 MHz
Z0 = 50 W
Z Source Z Load
G
S
D
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
2200 2.02 –6.03 1.70 –4.67
2170 2.12 –6.26 1.72 –4.76
2140 2.23 –6.50 1.73 –4.85
2110 2.34 –6.75 1.75 –4.95
2080 2.47 –7.01 1.77 –5.05
See next page for reference circuit information
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Data Sheet 7 of 14 Rev. 05, 2010-11-10
Reference Circuit
Reference circuit input schematic for ƒ = 2170 MHz
C106
10 pF
C105
100000 pF
C102
100000 pF
TL133 TL134
TL132
TL135
TL101
TL102
TL103
TL104
TL105
TL106
TL107
C801
1000 pF
C802
1000 pF
C803
1000 pF
TL108
R805
1200 Ohm
R801
1300 Ohm
TL109
TL110
TL111
TL112 TL113
1
2
3
TL114
1
2
3
TL115
1
2
3
TL116
R802
10 Ohm
TL117
TL118
TL119
1
2
3
4
TL120
TL121
TL122
TL123
TL124
TL131 TL129
TL130
1 2
3
TL125
C101
10 pF
1
2
3
TL126
C103
4710000 pF
R803
10 Ohm
R804
100 Ohm
12
3
1
2
3
TL128
C104
4710000 pF
R101
10 Ohm
C107
10 pF
R102
10 Ohm
3
S4
In Out
NC NC
1
2 3
45
6 7
8
S2
S
C
B
E
1
2
3
4S1
C108
2.1 pF
1 2
3
TL136
TL137
RF_IN GATE DUT
(Pin G)
b211803efl_bdin_08-26-2010
TL201
TL202 TL203
TL204
TL205 TL206 TL207TL208
TL209
TL210
TL211
TL212
1 2
3
TL213
TL214 TL215
TL216 TL217
12
3
TL218
TL219
C201
10 pF
TL220
12
3
TL221
TL222
TL223
12
3
TL224
12
3
TL225
TL226
C202
10000000 pF
C203
0.3 pF
1 2
3
TL227
C204
100000000 pF
C205
100000000 pF
C206
2200000 pF
TL228
TL229
TL230
12
3
TL231
C207
1000000 pF
12
3
TL232 TL233
C208
2200000 pF
TL234
C209
1000000 pF
TL235
C210
10000000 pF
TL236
12
3
TL237
TL238
DUT
(Pin V)
DRAIN DUT
(Pin D)
DUT
(Pin V)
RF_OUT
VDD
VDD
b211803efl_bdout_08-26-2010
Reference circuit output schematic for ƒ = 2170 MHz
e
r
=3.48
H=20 mil
RO/RO4350B1
e
r
=3.48
H=20 mil
RO/RO4350B1
Data Sheet 8 of 14 Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT PTFB211803EL or PTFB211803FL
PCB 0.508 mm [.020"] thick, er = 3.66, Rogers 4350, 1 oz. copper
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101 0.053 λ, 6.67 W W = 13.970, L = 4.064 W = 550, L = 160
TL102, TL103 0.019 λ, 54.17 W W = 1.016, L = 1.575 W = 40, L = 62
TL104, TL105 0.000 λ, 36.77 W W = 1.829, L = 0.025 W = 72, L = 1
TL106, TL122 0.026 λ, 54.17 W W = 1.016, L = 2.159 W = 40, L = 85
TL107 0.021 λ, 54.17 W W = 1.016, L = 1.727 W = 40, L = 68
TL108 0.018 λ, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60
TL109 0.029 λ, 54.17 W W = 1.016, L = 2.451 W = 40, L = 97
TL110 0.092 λ, 63.89 W W = 0.762, L = 7.831 W = 30, L = 308
TL111 0.031 λ, 34.72 W W = 1.981, L = 2.540 W = 78, L = 100
TL112 W1 = 1.270, W2 = 2.286 W1 = 50, W2 = 90
TL113 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500
TL114 0.012 λ, 54.17 W W1 = 1.016, W2 = 1.270, W3 = 1.016 W1 = 40, W2 = 50, W3 = 40
TL115, TL116, TL126, 0.019 λ, 63.89 W W1 = 0.762, W2 = 0.762, W3 = 1.600 W1 = 30, W2 = 30, W3 = 63
TL128
TL117, TL118, TL119 W = 1.016 W = 40
TL120 W1 = 13.970, W2 = 1.016, W3 = 13.970 W1 = 550, W2 = 40, W3 = 550
W4 = 1.016 W4 = 40
TL121 0.032 λ, 47.12 W W = 1.270, L = 2.692 W = 50, L = 106
TL123 0.016 λ, 31.24 W W = 2.286, L = 1.270 W = 90, L = 50
TL124, TL134 0.095 λ, 54.17 W W = 1.016, L = 8.001 W = 40, L = 315
TL125, TL127 0.022 λ, 54.17 W W1 = 1.016, W2 = 1.016, W3 = 1.829 W1 = 40, W2 = 40, W3 = 72
TL129 0.005 λ, 6.67 W W = 13.970, L = 0.356 W = 550, L = 14
TL130 0.000 λ, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1
TL131 (taper) 0.008 λ, 6.67 W / 7.64 W W1 = 13.970, W2 = 12.065, L = 0.584 W1 = 550, W2 = 475, L = 23
TL132 0.134 λ, 47.12 W = 1.270, L = 11.151 W = 50, L = 439
TL133 0.012 λ, 54.17 W = 1.016, L = 1.016 W = 40, L = 40
TL135 0.012 λ, 54.17 W = 1.016, L = 1.021 W = 40, L = 40
TL136 0.000 λ, 7.64 W1 = 12.065, W2 = 12.065, W3 = 0.025 W1 = 475, W2 = 475, W3 = 1
TL137 (taper) 0.032 λ, 7.64 W / 47.12 W W1 = 12.065, W2 = 1.270, L = 2.464 W1 = 475, W2 = 50, L = 97
table continued on page 9
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Data Sheet 9 of 14 Rev. 05, 2010-11-10
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201 W1 = 1.270, W2 = 2.540 W1 = 50, W2 = 100
TL202 0.001 λ, 5.33 W W = 17.780, L = 0.076 W = 700, L = 3
TL203 0.047 λ, 47.12 W W = 1.270, L = 3.912 W = 50, L = 154
TL204 0.044 λ, 39.51 W W = 1.651, L = 3.581 W = 65, L = 141
TL205 0.054 λ, 4.84 W W = 19.685, L = 4.064 W = 775, L = 160
TL206, TL207 0.016 λ, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50
TL208 0.012 λ, 39.51 W W = 1.651, L = 1.016 W = 65, L = 40
TL209 0.032 λ, 16.90 W W = 4.928, L = 2.540 W = 194, L = 100
TL210 0.032 λ, 17.05 W W = 4.877, L = 2.540 W = 192, L = 100
TL211, TL212 W = 3.048 W = 120
TL213, TL218 0.038 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 3.048 W1 = 120, W2 = 120, W3 = 120
TL214, TL216 0.135 λ, 25.04 W W = 3.048, L = 10.820 W = 120, L = 426
TL215, TL217 0.046 λ, 25.04 W W = 3.048, L = 3.683 W = 120, L = 145
TL219, TL228, TL233, 0.003 λ, 25.04 W W = 3.048, L = 0.254 W = 120, L = 10
TL234
TL220, TL229 0.016 λ, 25.04 W W = 3.048, L = 1.270 W = 120, L = 50
TL221, TL237 0.031 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 2.489 W1 = 120, W2 = 120, W3 = 98
TL222 (taper) 0.074 λ, 5.33 W / 39.51 W W1 = 17.780, W2 = 1.651, L = 5.588 W1 = 700, W2 = 65, L = 220
TL223 0.003 λ, 4.84 W W = 19.685, L = 0.254 W = 775, L = 10
TL224, TL225, TL231, 0.022 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 1.778 W1 = 120, W2 = 120, W3 = 70
TL232
TL226 (taper) 0.010 λ, 4.84 W / 5.33 W W1 = 19.685, W2 = 17.780, L = 0.762 W1 = 775, W2 = 700, L = 30
TL227 0.022 λ,39.51 W W1 = 1.651, W2 = 1.651, W3 = 1.829 W1 = 65, W2 = 65, W3 = 72
TL230, TL236 W1 = 4.928, W2 = 3.048, W1 = 194, W2 = 120
TL235 W1 = 1.651, W2 = 2.540 W1 = 65, W2 = 100
TL238 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700
Data Sheet 10 of 14 Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
RO4350, .020 (60)
C208
C207
C201
C209
C206
C205
C210
C202
C204
PTFB211803_OUT_01
C203
b2 1 1 8 0 3 e f l _ c d _ 1 1 - 0 8 - 2 0 1 0
RO4350, .020 (60)
R804
R805
R801
R802
C802 C801
R803
C803
R101
R102 C101
C102
C105
C106
C108
C103
C107
C104
PTFB211803_IN_01
+
S1
S2
S4
RF_IN RF_OUT
VDD
VDD
VDD
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFB211803EF
Find Gerber les for this test xture on the Inneon Web site at http://www.inneon.com/rfpower
Reference circuit assembly diagram (not to scale)
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Data Sheet 11 of 14 Rev. 05, 2010-11-10
Reference Circuit (cont.)
Components Information
Component Description Suggested Manufacturer P/N
Input
C101, C106, C107 Chip capacitor,10 pF ATC ATC100B100JW500XJ
C102, C105 Chip capacitor, 0.1 μF Digi-Key PCC104BCT-ND
C103, C104 Chip capacitor, 4.71 μF Digi-Key 493-2372-2-ND
C108 Chip capacitor, 2.1 pF ATC ATC100B2R1BW500XB
C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT-ND
R101, R102, R802, R803 Resistor, 10 W Digi-Key P10ECT-ND
R801 Resistor, 1300 W Digi-Key P1.3KGCT-ND
R804 Resistor, 100 W Digi-Key P100ECT-ND
R805 Resistor, 1200 W Digi-Key P1.2KGCT-ND
S1 Transistor Digi-Key BCP56-ND
S2 Voltage Regulator Digi-Key LM78L05ACM-ND
S4 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
Output
C201 Chip capacitor, 10 pF ATC ATC100B100JW500XJ
C202, C210 Capacitor, 10 μF Digi-Key 587-1818-2-ND
C203 Chip capacitor, 0.3 pF ATC ATC100B0R3BW500XB
C204, C205 Capacitor, 100 μF Digi-Key PCE4442TR-ND
C206, C208 Chip capacitor, 2.2 μF Digi-Key 445-1447-2-ND
C207, C209 Chip capacitor, 1 μF Digi-Key 445-1411-2-ND
Data Sheet 12 of 14 Rev. 05, 2010-11-10
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Package Outline Specications
Package H-33288-6
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
+.254
–.127
+. 010
–.005
]
L
C
D
G
S
C
L19.558±.510
[.770±.020]
27.940
[1.100]
2X 12.700
[.500]
45° X 2.032
[45° X .080] 4X 1.143
[.045] (4 PLS)
9.398
[.370]
9.779
[.385]
34.036
[1.340]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039
[
.159
2X 22.860
[.900]
[.200] (2 PLS)
C
L
4.889±.510
[.192±.020]
4X R1.524
[R.060]
2X R1.626
[R.064]
V
E
V
F
4X 30°
H -33288 - 6_ po _02 -18 - 2010
2X 5.080
PTFB211803EL
PTFB211803FL
Confidential, Limited Internal Distribution
Data Sheet 13 of 14 Rev. 05, 2010-11-10
L
C
D
G
C
L19.558±.510
[.770±.020]
2X 12.700
[.500]
45° X 2.032
[45° X .080]
2X 1.143
[.045]
9.398
[.370]
9.779
[.385]
23.114
[.910]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039+.254
-.127
[
.159
+.010
-.005
]
22.860
[.900]
2X 5.080
[.200]
4.889±.510
[.192±.020]
V V
S
2X 30°
C 66065-A0003-C743-01-0027 H-34288-4_2 .dwg
L
C
4X R0.508
+.381
-.127
[
R.020+.015
-.005
]
Package Outline Specications (cont.)
Package H-34288-4/2
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: D = drain; S = source; G = gate; V = VDD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Inneon Internet page
http://www.inneon.com/rfpower
Data Sheet 14 of 14 Rev. 05, 2010-11-10
Edition 2010-11-10
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2009 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@inneon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFB211803EL V1 / PTFB211803FL V2
Condential, Limited Internal Distribution
Revision History: 2010-11-10 Data Sheet
Previous Version: 2010-08-25, Data Sheet
Page Subjects (major changes since last revision)
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