TLDR5800 TELEFUNKEN Semiconductors High Intensity LED in o 5 mm Clear Package Color Double hetero red Type TLDR5800 Technology GaAlAs on GaAs Angle of Half Intensity o 4 Description This LED contains the double heterojunction (DH) GaAlAs on GaAs technology. This deep red LED can be utilized over a wide range of drive current. It can be DC or pulse driven to achieve desired light output. A clear 5 mm package is used to provide an extremely high light intensity of more than 2000 mcd at a very narrow viewing angle. Features D Exceptional brightness (IVtyp = 2500 mcd at IF = 20 mA) D D D D D D D 94 8631 Very high intensity even at low drive currents Narrow viewing angle ( = 4) Low forward voltage 5 mm (T-13/4) clear package Deep red color Categorized for luminous intensity Outstanding material efficiency Applications Bright ambient lighting conditions Battery powered equipment Indoor and outdoor information displays Portable equipment Telecommunication indicators General use Rev. A1: 01.06.1995 1 (6) TLDR5800 TELEFUNKEN Semiconductors Absolute Maximum Ratings Tamb = 25C, unless otherwise specified Double hetero red (TLDR5800 ) Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Test Conditions Type tp 10 ms Tamb 65C t 5 s, 2 mm from body Thermal resistance junction/ambient Symbol VR IF IFSM PV Tj Tamb Tstg Tsd Value 6 50 1 100 100 -20 to +100 -55 to +100 260 Unit V mA A mW C C C C RthJA 350 K/W Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Double hetero red (TLDR5800 ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2 (6) Test Conditions IF = 20 mA, IVmin/IVmax 0.5 IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Type Symbol IV ld lp VF VR Cj Min 1000 6 Typ 2500 648 650 4 1.8 15 50 Max 2.2 Unit mcd nm nm deg V V pF Rev. A1: 01.06.1995 TLDR5800 TELEFUNKEN Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 0 Iv rel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 125 100 75 50 25 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0 0 20 40 60 100 80 Tamb - Ambient Temperature ( C ) 95 10918 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10022 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Rel. Luminous Intensity vs. Angular Displacement 60 100 DH Red IF - Forward Current ( mA ) IF - Forward Current ( mA ) 50 40 30 20 10 10 0 1 0 20 40 60 100 80 Tamb - Ambient Temperature ( C ) 95 11489 1 1000 tp/T=0.01 0.02 0.1 100 1 1 0.01 0.2 0.5 3 2.0 v65C 0.05 10 2.5 Figure 5. Forward Current vs. Forward Voltage Iv rel - Relative Luminous Intensity IF - Forward Current ( mA ) Tamb 2 VF - Forward Voltage ( V ) 95 10014 Figure 2. Forward Current vs. Ambient Temperature 10000 1.5 DH Red 1.6 1.2 0.8 0.4 0 0.1 1 10 100 tp - Pulse Length ( ms ) 95 10025 Figure 3. Forward Current vs. Pulse Length Rev. A1: 01.06.1995 0 95 10015 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 3 (6) TLDR5800 TELEFUNKEN Semiconductors 1.2 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 2.4 DH Red 2.0 1.6 1.2 0.8 0.4 DH Red 1.0 0.8 0.6 0.4 0.2 IFAV=10mA, const. 0 95 10262 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 0 600 95 10018 620 640 660 680 700 l - Wavelength ( nm ) Figure 9. Relative Luminous Intensity vs. Wavelength Iv rel - Relative Luminous Intensity 10 DH Red 1 0.1 0.01 0.1 95 10016 1 10 100 IF - Forward Current ( mA ) Figure 8. Relative Luminous Intensity vs. Forward Current 4 (6) Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TLDR5800 Dimensions in mm 95 11476 Rev. A1: 01.06.1995 5 (6) TLDR5800 TELEFUNKEN Semiconductors Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) Rev. A1: 01.06.1995