TELEFUNKEN Semiconductors TLDR5800
Rev. A1: 01.06.1995 1 (6)
High Intensity LED in ø 5 mm Clear Package
Color Type Technology Angle of Half Intensity
±
ö
Double hetero red TLDR5800 GaAlAs on GaAs 4
°
Description
This LED contains the double heterojunction (DH)
GaAlAs on GaAs technology.
This deep red LED can be utilized over a wide range of
drive current. It can be DC or pulse driven to achieve de-
sired light output.
A clear 5 mm package is used to provide an extremely
high light intensity of more than 2000 mcd at a very nar-
row viewing angle.
Features
D
Exceptional brightness (IVtyp = 2500 mcd at
IF = 20 mA)
D
Very high intensity even at low drive currents
D
Narrow viewing angle (ϕ = ±4
°
)
D
Low forward voltage
D
5 mm (T–1
¾
) clear package
D
Deep red color
D
Categorized for luminous intensity
D
Outstanding material efficiency
94 8631
Applications
Bright ambient lighting conditions
Battery powered equipment
Indoor and outdoor information displays
Portable equipment
Telecommunication indicators
General use
TELEFUNKEN Semiconductors
TLDR5800
Rev. A1: 01.06.19952 (6)
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Double hetero red (TLDR5800 )
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage VR6 V
DC forward current IF50 mA
Surge forward current tp ≤ 10
m
s IFSM 1 A
Power dissipation Tamb ≤ 65
°
C PV100 mW
Junction temperature Tj100
°
C
Operating temperature range Tamb –20 to +100
°
C
Storage temperature range Tstg –55 to +100
°
C
Soldering temperature t ≤ 5 s,
2 mm from body Tsd 260
°
C
Thermal resistance junction/ambient RthJA 350 K/W
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Double hetero red (TLDR5800 )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 20 mA, IVmin/IVmax ≥ 0.5 IV1000 2500 mcd
Dominant wavelength IF = 20 mA
l
d648 nm
Peak wavelength IF = 20 mA
l
p650 nm
Angle of half intensity IF = 20 mA ϕ±4 deg
Forward voltage IF = 20 mA VF1.8 2.2 V
Reverse voltage IR = 10
m
A VR6 15 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
TELEFUNKEN Semiconductors TLDR5800
Rev. A1: 01.06.1995 3 (6)
Typical Characteristics (Tamb = 25
_
C, unless otherwise specified)
020406080
0
25
50
75
100
125
P – Power Dissipation ( mW )
V
Tamb – Ambient Temperature ( °C )
100
95 10918
Figure 1. Power Dissipation vs. Ambient Temperature
0
10
20
30
40
60
020406080
I – Forward Current ( mA )
F
Tamb – Ambient Temperature ( °C )
100
95 11489
50
Figure 2. Forward Current vs. Ambient Temperature
0.01 0.1 1 10
1
10
100
1000
10000
tp – Pulse Length ( ms )
100
95 10025
I – Forward Current ( mA )
F
tp/T=0.01 0.02 0.05 0.1
0.2
10.5
Tamb
v
65°C
Figure 3. Forward Current vs. Pulse Length
0.4 0.2 0 0.2 0.4 0.6
95 10022
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
I – Relative Luminous Intensity
v rel
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
1
10
100
95 10014
1 1.5 2 2.5 3
I – Forward Current ( mA )
F
VF – Forward Voltage ( V )
DH Red
Figure 5. Forward Current vs. Forward Voltage
0
95 10015
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
0
0.4
0.8
1.2
1.6
2.0
DH Red
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
TELEFUNKEN Semiconductors
TLDR5800
Rev. A1: 01.06.19954 (6)
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10262
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 DH Red
IFAV=10mA, const.
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0.1 1 10
0.01
0.1
1
10
100
95 10016
I – Relative Luminous Intensity
v rel
IF – Forward Current ( mA )
DH Red
Figure 8. Relative Luminous Intensity vs. Forward Current
600 620 640 660 680
0
0.2
0.4
0.6
0.8
1.2
700
95 10018
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 DH Red
Figure 9. Relative Luminous Intensity vs. Wavelength
TELEFUNKEN Semiconductors TLDR5800
Rev. A1: 01.06.1995 5 (6)
Dimensions in mm
95 11476
TELEFUNKEN Semiconductors
TLDR5800
Rev. A1: 01.06.19956 (6)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
