This is information on a product in full production.
October 2014 DocID026589 Rev 1 1/10
TS110-8
High surge voltage 1.25 A SCR for circuit breaker
Datasheet - production data
Features
•On-s tate rms current, 1.25 A
•Repeti tive peak off-state voltage, 800 V
•Non-repetitive direct surge peak off-state
voltage , 1250 V
•Non-repetitive reverse surge peak off-state
voltage , 900 V
•Triggerin g gate current, 100 µA
•High off-state immunity: 200 V/µs
•ECOPACK®2 compliant component
Applications
•GFCI (Ground Fault Circuit Interrupter)
•AFCI (Arc Fault Circuit Interrupte r)
•RCD (Residual Current Device)
•RCBO (Residual Current circuit Breaker with
Ov erload protection)
•AFDD (Arc Fault Detecti on Device)
Description
Thanks to highly sensitive triggering levels, the
TS110-8 series is suitable for circuit breaker
applications where the available gate current is
limited.
The 1250 V direct surge voltage capability of the
TS110-8 enables high robustness of the whole
circuit breaker. The low leaka ge current of th e
TS110-8 reduces power consumption over the
entire lifetime of the circuit breaker. The high
off-state imm unity (200 V/µs) insures the non
tripping of the breaker in case of electrical fast
transient (EF T) on the mains.
The TS110-8 is available in through-hole TO-92
package with GAK and KGA pinout and in
SM Bflat-3L package .
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Table 1. Device summary
Symbol Value Unit
IT(RMS) 1.25 A
VDRM, VRRM 800 V
VDSm, VRSM 1250, 900 V
IGT 100 µA
Tj125 °C
www.st.com
Characteristics TS110-8
2/10 DocID026589 Rev 1
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
IT(RMS) On-state rms current (180° conduction angle) TO-92 Tl = 53 °C 1.25 A
SMBflat-3L Tc = 109 °C
IT(AV) Average on-state current
(180° conduction angle) TO-92 TI = 53 °C 0.8 A
SMBflat-3L Tc = 109 °C
ITSM
Non repetitive surge peak on-state current tp = 8.3 ms Tj initial = 25 °C 21
A
tp = 10 ms 20
1st step: one surge every 5 seconds, 25 surges
2nd step: one surge every 5 seconds, 25 surges tp = 10 ms Tamb = 90 °C 25 times 12 A
25 times 16 A
I²tI
²t Value f or fusing t p = 10 ms , 25 °C 2 A2S
dI/dt
Critical rate of ris e of on- state current
IG = 2 x I GT, tr ≤ 100 ns F = 50 Hz, 125 °C 100 A/µs
Non repeti ti ve criti cal current rate of rise a t bre a k-over, see Figure 17, VD > VDSm 200
VDRM,
VRRM Repetitive peak off -state AC voltage, RGK = 220 ΩTj = 125 °C 800 V
VDSm Non-repetitive direct surge peak off-state voltage,
RGK = 220 Ωtp = 10 ms Tj = 25 °C 1250 V
VRSM Non-repetiti ve reverse surge peak off-st ate
voltage, RGK = 220 Ωtp = 10 ms Tj = 25 °C 900 V
IGM Peak gate current tp = 20 µs Tj = 125 °C 1.2 A
PG(AV) Average gate power dissipation Tj = 125 °C 0.2 W
Tstg Storage junction temperature range - 40 to + 150 °C
TjOperating junction temperature range - 40 to + 125
Table 3. Electrical characteristics
Symbol Test condi tions Val ue Unit
IGT VD = 12 V, RL = 140 ΩTj = 25 °C
Min. 1 µA
Max. 100
VGT Max. 0.8 V
VGD VD = VDRM, RL = 33 kΩ, RGK = 220 ΩTj = 125 °C Min. 0.1 V
VRG IRG = 2 mA Tj = 25 °C Min. 7.5 V
IHIT = 50 mA, RGK = 220 ΩTj = 25 °C Max. 12 mA
ILIG = 5 mA, RGK = 220 ΩTj = 25 °C Max. 12 mA
dV/dt VD = 67% VDRM, RGK = 220 ΩTj = 125 °C Min. 200 V/µs
DocID026589 Rev 1 3/10
TS110-8 Characteristics
10
Table 4. St atic electrical characteristics
Symbol Test condi tions Val ue Unit
VTM ITM = 2.5 A, tp = 380 µs Tj = 25 °C Max. 1.6 V
VT0 Threshold voltage Tj = 125 °C Max. 0.95 V
RDDynamic resistance Tj = 125 °C Max. 220 mΩ
IDRM
IRRM VD = VDRM / VRRM, RGK = 220 ΩTj = 25 °C Max. 1µA
Tj = 125 °C 100 µA
Table 5. Thermal resist ance
Symbol Parameter Value Unit
Rth(j-l) Junction to leads (DC) TO-92 65
°C/WRth(j-a) Junction t o ambient (DC) TO-92 160
S = 5 cm2SMBflat-3L 75
Rth(j-c) Junction to c ase (DC) SMBflat -3L 14
Figure 1. Maxim um averag e pow er dissi pation
versus averag e on -s tate current Figur e 2. Average an d DC on-state current
versus lea d tempera ture (TO-92)
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Figure 3. Averag e and DC on-s tate current
versus case temperature (SMBflat-3L) Figur e 4. Average an d DC on-state current
versus am bien t temp eratur e
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 25 50 75 100 125
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I (A)
T(AV)
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T (°C)
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Characteristics TS110-8
4/10 DocID026589 Rev 1
Figure 5. Relative variation of thermal
im pedance ju nc ti on t o am bien t ve rsus pul se
duration
Figure 6. Typical thermal resistance junction to
ambient versus copper surface under anode
(e pox y FR 4, Cuth = 35 µm)
0.01
0.10
1.00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
TO-92
SMBflat-3L
Copper surface
area = 5cm²
T()
ps
K = [Z /R ]
th(j-a) th(j-a)
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Figure 7. Relative variation of gate trigger
current and trigger voltage versus junction
tempera ture (typical valu es)
Figure 8. Relative variation of latching and
hol ding curr ent vers us junct ion tempe ra ture
(typica l values)
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Figure 9. Relative vari ation of holding curr ent
versus ga te-catho de resistance (typical values) Figure 10. Relative variation of dV/dt immun ity
versus junction temperature (typical values)
0.0
0.5
1.0
1.5
2.0
2.5
1.E-01 1.E+00 1.E+01
RK
GK ()Ω
I [ ] / I [ = 2 ]
HH
RGK RGK 20 Ω
DocID026589 Rev 1 5/10
TS110-8 Characteristics
10
Figure 15. Non repetitive surge peak on-state curren t
Figure 1 1. Relative variation of dV/d t immunity
versus ga te-catho de resistance (typical values) Figure 12. Relative variation of dV/dt immun ity
versus gate-cathode capacitor (typical values)
0.10
1.00
10.00
100 200 300 400 500 600 700
RGK ()Ω
dV/d R dV/d R 220
tGK tGK
[]/[=]Ω
VV
D= 0.67 X DRM
j= 125 °C
T
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0 0.5 1.0 1.5 2.0
CGK ()nF
dV/d C dV/d C 100
tGK tGK
[]/[= ]pF
VV
D= 0.67 X DRM
j= 125 °C
T
R 220
GK =Ω
Figur e 13. On-s tate characteristics (maximu m
values) Figure 14. Surg e peak on-state current versus
number of cycl es
0.1
1.0
10.0
100.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Tj= 125 °C
Tj= 25 °C
VTM ()V
ITM ()A
j= 125 °C
T
= 0Vto .95 V
Rd220 m= Ω
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AC line transient voltage ruggedn ess TS110 -8
6/10 DocID026589 Rev 1
2 AC line transient voltage ruggedness
In comparison with standard SCRs, the TS110-8 is self-protected against over-volt age. The
TS110-8 switch can safely withstand AC line direct surge voltages by switching to the on
st ate (for less than 10 ms on 50 Hz mains) to dissipate energy shocks through the load. The
load limits the current through the TS110-8. The self-protection against over-voltage is
based on an overvoltage crowbar technology. This safety feature works even with high
turn-on current ramp up.
Figure 16 represents the TS110-8 in a test environment. It is used to stress the TS110-8
switch according to the IEC 61000-4-5 standard conditions. The TS110-8 folds back safely
to the on state as shown in Figure 17.
The TS110-8 recovers its bl ocking volt age capability after the direct surge and the next zero
current crossing. Such a non repetitive test can be done at least 10 times.
Figure 16. Overvolt ag e ruggedness test circuit for IEC 61000-4-5 standards
Figure 17. Ty pical curren t and voltage waveforms across the TS110-8 during
IEC 61000-4-5 standard test
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DocID026589 Rev 1 7/10
TS110-8 Package in formati on
10
3 Package information
•Epoxy meets UL94, V0
•Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depe nding on their level of environmen tal compliance. ECO PACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figu re 18. TO-92 dim ensio ns (de fi ni t io ns)
For ammopack packing information, please contact your sales representative.
Table 6. TO-92 dimensions (values)
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.35 0.053
B 4.70 0.185
C 2.54 0.100
D 4.40 0.173
E 12.70 0.500
F 3.70 0.146
a 0.5 0.019
A
F
C
B
a
DE
Pack age information TS110-8
8/10 DocID026589 Rev 1
Figure 19. SMBflat-3L dimensions (definitions)
Figure 20. SMBflat-3L footprint dimensions
Table 7. SMBflat-3L dimensions (values)
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 0.90 1.10 0.035 0.043
b 0.35 0.65 0.014 0.026
b4 1.95 2.20 0.07 0.087
c 0.15 0.40 0.006 0.016
D 3.30 3.95 0.130 0.156
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.156 0.181
L 0.75 1.50 0.030 0.059
L1 0.40 0.016
L2 0.60 0.024
e 1.60 0.063
D
A
L 2x
LL2
L1
L1
L2 2x
EE1
b4
c
eb 2x
millimeters
(inches)
1.20
(0.047)
2.07
(0.082)
0.51
(0.020)
0.51
(0.020) 1.20
(0.047)
3.44
(0.136)
5.84
(0.230)
2.07
(0.082)
DocID026589 Rev 1 9/10
TS110-8 Ordering information
10
4 Ordering information
Figure 21. Ordering information scheme
5 Revision history
Table 8. Ordering information
Order code Marking Pac kage Wei ght Base qty. Delivery mode
TS110-8A1 TS110-8 T0-92 200 mg 2500 Bulk
TS110-8A1-AP TS110-8 2000 Ammopack
TS110-8A2 TS110-8 T0-92 200 mg 2500 Bulk
TS110-8A2-AP TS110-8 2000 Ammopack
TS110-8UF TS110-8 SMBfl at-3L 47 mg 5000 Tape and reel 13”
TS - (- )1 10 8 A1 AP
Sensitive SCR series
Current (rms)
1 1.25=A
Gate sensitivity
1 100 μ0 = A
Voltage
88= 00 V
Package
A1 TO-92 with “GAK” pinout=
A2 TO-92 with “KGA” pinout=
UF = SMBflat-3L
Packing mode
-=AP Ammopack (TO_92)
Blank = Bulk (TO-92), 13” tape and reel (SMBflat-3L)
Table 9. Document revision history
Date Revision Changes
13-Oct-2014 1 Initial rel ease.
TS110-8
10/10 DocID026589 Rev 1
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