FEATURES
NEC's 1.5W
GaAs MMIC POWER AMPLIFIER
DESCRIPTION
UPG2118K
NEC's UPG2118K is a 1.5W, 3 stage power amplifier
developed primarily for DCS/PCS1800 applications.
With modified external matching the UPG2118K can
be tuned from 800 to 2500 MHz.
Use of E-mode FET technology delivers high efficiency
and high linearity with a single positive low voltage
supply.
APPLICATIONS
1800 MHz DCS/PCS
915 AND 2450 ISM BAND USAGE
AUTOMATIC METER READERS
WIRELESS SECURITY
SATELLITE UPLINK
California Eastern Laboratories
ORDERING INFORMATION
E-MODE HJ-FET TECHNOLOGY
SINGLE +3.2V POWER SUPPLY
HIGH EFFICIENCY: PAE = 42% MIN
HIGH SATURATED POWER: Pout = +31.5 dBm MIN
FLEXIBLE FREQUENCY RANGE
20-PIN QFN PACKAGE:
(4.15 X 4.15 X 0.9 mm)
PART NUMBER MARKING PACKAGE SUPPLYING FORM
UPG2118K-E3-A 2118 20-pin QFN Embossed tape 12mm wide
4.5 K pcs/reel
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETERS SYMBOL RATINGS UNIT
Storage Temperature Tstg 45 to +85 °C
Operating Temperature Topt 45 to +85 °C
Supply Voltage1,2,3 VD1,2,3 8.0 V
Active Bias Circuit Voltage VABC 8.0 V
Reference Voltage Vref 5.0 V
Junction Temperature Tj150 °C
Input Power Pin 15 dBm
Total Power Dissipation Ptot 4.0 W
Caution This device is ESD sensitive. Please take ESD precautions.
The information contained in this document is being issued in advance of the production cycle for the device.
The parameters for the device may change before final production or NEC Corporation, at its own discretion,
may withdraw the device prior to its production.
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UPG2118K
PIN CONNECTIONS
PIN NO. CONNECTION PIN NO. CONNECTION
1 VG1,2 11 GND
2 Vref1,2 12 NC
3 VABC 13 NC
4 Vref3 14 GND
5 VG3 15 VD2
6 GND 16 VD1
7 VD3/RF OUT 17 GND
8 VD3/RF OUT 18 GND
9 VD3/RF OUT 19 Vattn
10 VD3/RF OUT 20 RF IN
(Top View)
RECOMMENDED OPERATING CONDITIONS (TA = 25°C)
PARAMETERS SYMBOL MIN TYP MAX UNIT
Supply Voltage VD1,2,3 +2.8 +3.2 +5.5 V
Reference Voltage Vref +0.04 - +1.8 V
Active Bias Circuit Voltage VABC 0 2.6 5.5 V
Input Power Pin 5 - 10 dBm
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA=+25°C,f=1880MHz,VD=+3.2V,VABC=+2.6V,Vref=Vattn=1.8V, Pin=+5dBm)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Active Bias Circuit Current IABC Pout=+31.5dBm,VABC=Arbitrary - - 30 mA
Reference Current Iref Vref=Vattn=0.04 to 1.8V - - 10 mA
RF Leakage Current Ileak
Vref=Vattn=0.04 V
VABC=10K ohm+Load
- - 50 mA
Output Power Pout +31.5 - - dBm
Power Added Efficiency PAE 42.0 - - %
Power Control Slope Pslope
Vref=Vattn=0.04 V to 1.8V
ΔVref=0.01V
- - 50:1 Vrms/
Vref
Minimum Output Power MPout Vref=Vattn=0.04 V - - -20 dBc
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TEST CIRCUIT
UPG2118K UPG2118K
NC (VG1,2 VG3) These pins must be connected to ground via a 1000pF capacitor for stability.
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PACKAGE DIMENSIONS (UNIT: mm)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
02/08/2005
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4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
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2003/11/EC Restriction on Penta and Octa BDE.
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go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
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PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
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