JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03Z Plastic-Encapsulate Diodes
FBAP50-05W pin Diodes
DESCRIPTION
Silicon planar
FEATURES
z Two elements in common cathode configuration
in a small-sized package
z Low diode capacitance
z Low diode forward resistance..
APPLICATION
General RF applications.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: W4
3
W4
1 2
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter Symbol Limits Unit
Continuous reverse voltage VR 50 V
Continuous For ward Current IF 50 mA
Power Dissipation (TA=90℃) Pd 150 mW
thermal resistance from junction to soldering point Rthj-s 250 K/W
Junction temperature Tj -65~+150 ℃
Storage temperature range TSTG -65~+150
℃
WBFBP-03Z
(2×2×0.5)
unit: mm
1
3
2
Electrical Characteristics @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
Continuous reverse voltage VR 50 V IR=10µA
Forward voltage VF 1.1 V IF=50mA
Reverse current IR 100 nA VR=50V
Cd1 1.1 pF VR=0V,f=1MHz
Cd2 0.6 pF VR=1V,f=1MHz
Diode capacitance
Cd3 0.5 pF VR=5V,f=1MHz
rD 40 Ω I
F=0.5mA , f=100MHz
rD 25 Ω I
F=1mA , f=100MHz
Diode forward resistance
rD 5 Ω I
F=10mA , f=100MHz
charge carrier life time τL 1.05 μS
When switched from IF=10mA
to IR=6mA; RL=100;measured
at IR=3mA
series inductance LS 1.6 nH IF=100mA; f=100MHz
Typical Characteristics FBAP50-05W
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.000 0.100 0.000 0.004
b 0.150 0.250 0.006 0.010
D 1.900 2.100 0.075 0.083
E 1.900 2.100 0.075 0.083
D1
E1
e
L
k
z
0. 02 4 REF.
0. 500 R EF. 0. 020 R EF.
Symbol Dimensions In Millimeters Dimensions In Inches
1. 300 TYP. 0. 052 TYP.
1. 100 R EF. 0. 043 R EF.
0. 600 R EF.
0. 500 R EF. 0. 020 R EF.
0. 400 R EF. 0. 016 R EF.
