Data Sheet 1 05.99
SIPMOS Power Transistor
Product Summary
Drain source voltage 55
V
DS V
Drain-Source on-state resistance Ω
0.007
R
DS(on)
I
D
Continuous drain current 80 A
Features
• N channel
• Enhancement mode
• Avalanche rated
• Logic Level
• d
v
/d
t
rated
• 175˚C operating temperature
Pin 1 Pin 2 Pin 3
G D S
PackagingType Package Ordering Code
BUZ111SL TubeP-TO220-3-1 Q67040-S4002-A2
BUZ111SL E3045A Tape and ReelQ67040-S4002-A6P-TO263-3-2 TubeBUZ111SL E3045 P-TO263-3-2 Q67040-S4002-A5
Maximum Ratings, at
T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol UnitValue
Continuous drain current
T
C = 25 ˚C, 1)
T
C = 100 ˚C
80
80
I
DA
Pulsed drain current
T
C = 25 ˚C
I
Dpulse 320
Avalanche energy, single pulse
I
D = 80 A,
V
DD = 25 V,
R
GS = 25 ΩmJ
E
AS 700
Avalanche energy, periodic limited by
T
j
max 30
E
AR
Reverse diode d
v
/d
t
I
S = 80 A,
V
DS = 40 V, d
i
/d
t
= 200 A/µs,
T
jmax = 175 ˚C
d
v
/d
t
6 kV/µs
Gate source voltage
V
GS ±20 V
Power dissipation
T
C = 25 ˚C
P
tot 300 W
Operating and storage temperature
T
j
,
T
st
g
˚C-55... +175
55/175/56IEC climatic category; DIN IEC 68-1
BUZ 111SL
BUZ 111SL
Data Sheet 2 05.99
Thermal Characteristics
Parameter ValuesSymbol Unit
typ. max.min.
Characteristics
R
thJC - - 0.5 K/WThermal resistance, junction - case -Thermal resistance, junction - ambient, leded
R
thJA - 62
-
-
-
-
62
40
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area2)
R
thJA
Electrical Characteristics, at
T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol UnitValues
min. max.typ.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA -
V
(BR)DSS 55 - V
Gate threshold voltage,
V
GS =
V
DS
I
D = 240 µA
V
GS(th) 21.61.2
Zero gate voltage drain current
V
DS = 50 V,
V
GS = 0 V,
T
j = 25 ˚C
V
DS = 50 V,
V
GS = 0 V,
T
j = 150 ˚C
-
-
I
DSS µA
1
100
0.1
-
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 nA100
Drain-Source on-state resistance
V
GS = 4.5 V,
I
D = 80 A
V
GS = 10 V,
I
D = 80 A
R
DS(on) -
-0.0085
0.0055 0.01
0.007
Ω
1current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
BUZ 111SL
Data Sheet 3 05.99
Electrical Characteristics, at
T
j = 25 ˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥2*
I
D*
R
DS(on)max ,
I
D = 80 A
g
fs 30 95 - S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss - 3850 4800 pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss - 1090 1357
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss - 570 715
Turn-on delay time
V
DD = 30 V,
V
GS = 4.5 V,
I
D = 80 A,
R
G = 1.3 Ω
t
d(on) - 30 45 ns
Rise time
V
DD = 30 V,
V
GS = 4.5 V,
I
D = 80 A,
R
G = 1.3 Ω
t
r- 37 56
Turn-off delay time
V
DD = 30 V,
V
GS = 4.5 V,
I
D = 80 A,
R
G = 1.3 Ω
t
d(off) - 70 105
Fall time
V
DD = 30 V,
V
GS = 4.5 V,
I
D = 80 A,
R
G = 1.3 Ω
t
f- 36 55
BUZ 111SL
Data Sheet 4 05.99
Electrical Characteristics, at
T
j = 25 ˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
V
DD = 40 V,
I
D = 80 A 18 nC12
Q
gs -
- 61
Q
gd
Gate to drain charge
V
DD = 40 V,
I
D = 80 A 91.5
Gate charge total
V
DD = 40 V,
I
D = 80 A,
V
GS = 0 to 10 V - 155 232
Q
g
Gate plateau voltage
V
DD = 40 V,
I
D = 80 A
V
(plateau) 3.4 - V-
Reverse Diode
Inverse diode continuous forward current
T
C = 25 ˚C
I
S- - 80 A
Inverse diode direct current,pulsed
T
C = 25 ˚C
I
SM - - 320
Inverse diode forward voltage
V
GS = 0 V,
I
F = 160 A
V
SD - 1.25 V1.8
Reverse recovery time
V
R = 30 V,
I
F=
I
S , d
i
F/d
t
= 100 A/µs
t
rr - 105 ns157
Reverse recovery charge
V
R = 30 V,
I
F=
l
S , d
i
F/d
t
= 100 A/µs
Q
rr - µC0.31 0.47
BUZ 111SL
Data Sheet 5 05.99
Power Dissipation
P
tot =
f
(
T
C)
0 20 40 60 80 100 120 140 160˚C 190
T
C
0
40
80
120
160
200
240
W
320 BUZ111SL
P
tot
Drain current
I
D =
f
(
T
C)
parameter:
V
GS ≥ 10 V
0 20 40 60 80 100 120 140 160˚C 190
T
C
0
10
20
30
40
50
60
70
A
90 BUZ111SL
I
D
Transient thermal impedance
Z
thJC =
f
(
t
p)
parameter :
D
=
t
p/
T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
BUZ111SL
Z
thJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D =
f
(
V
DS)
parameter :
D
= 0 ,
T
C = 25 ˚C
10 -1 10 0 10 1 10 2
V
V
DS
0
10
1
10
2
10
3
10
A
BUZ111SL
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 29.0µs
BUZ 111SL
Data Sheet 6 05.99
Typ. output characteristics
I
D =
f
(
V
DS)
parameter:
t
p = 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
DS
0
20
40
60
80
100
120
140
160
A
190 BUZ111SL
I
D
V
GS [V]
a
a 2.5
b
b 3.0
c
c 3.5
dd 4.0
e
e 4.5
f
f 5.0
g
g 5.5
h
h 6.0
i
i 6.5
j
j 7.0
k
k 8.0
l
P
tot = 300W
l 10.0
Typ. drain-source-on-resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0 20 40 60 80 100 A140
I
D
0.000
0.004
0.008
0.012
0.016
0.020
0.024
Ω
0.032 BUZ111SL
R
DS(on)
V
GS [V] =
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
6.5
j
j
7.0
k
k
8.0
l
l
10.0
Typ. transfer characteristics
I
D=
f
(
V
GS)
parameter:
t
p = 80 µs
V
DS ≥ 2 x
I
D x
R
DS(on)max
1.0 1.5 2.0 2.5 3.0 V4.0
V
GS
0
10
20
30
40
50
60
A
80
I
D
Typ. forward transconductance
g
fs =
f
(
I
D);
T
j = 25˚C
Parameter: gfs
0 10 20 30 40 50 A70
I
D
0
10
20
30
40
50
60
70
80
S
100
g
fs
BUZ 111SL
Data Sheet 7 05.99
Drain-source on-resistance
R
DS(on) =
f
(
T
j)
parameter :
I
D = 80 A,
V
GS = 4.5 V
-60 -20 20 60 100 140 ˚C 200
T
j
0.000
0.004
0.008
0.012
0.016
0.020
0.024
0.028
Ω
0.034 BUZ111SL
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter :
V
GS =
V
DS,
I
D = 240 µA
-60 -20 20 60 100 140 ˚C 200
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
min
typ
max
Typ. capacitances
C = f (V
DS
)
parameter:
V
GS = 0 V,
f
= 1 MHz
0 10 20 V40
V
DS
2
10
3
10
4
10
5
10
pF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
0
10
1
10
2
10
3
10
A
BUZ111SL
I
F
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 175 ˚C typ
T
j = 175 ˚C (98%)
BUZ 111SL
Data Sheet 8 05.99
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D puls = 80 A
0 40 80 120 160 nC 240
Q
Gate
0
2
4
6
8
10
12
V
16 BUZ111SL
V
GS
DS max
V
0,8
DS max
V
0,2
Avalanche Energy
E
AS =
f
(
T
j)
parameter:
I
D = 80 A,
V
DD = 25 V
R
GS = 25 Ω
20 40 60 80 100 120 140 ˚C 180
T
j
0
150
300
450
mJ
750
E
AS
Drain-source breakdown voltage
V
(BR)DSS = f
(
T
j)
-60 -20 20 60 100 140 ˚C 200
T
j
50
52
54
56
58
60
62
64
V
66 BUZ111SL
V
(BR)DSS
