PD - 96011A IRF7805ZPbF HEXFET(R) Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l VDSS : Qg (typ.) 30V 6.8m @VGS = 10V Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 100% tested for Rg RDS(on) max 18nC A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 20 ID @ TA = 25C 16 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 120 2.5 ID @ TA = 70C f f PD @TA = 25C Power Dissipation PD @TA = 70C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A 12 c W 1.6 0.02 -55 to + 150 W/C C Thermal Resistance Parameter RJL RJA g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. Units --- 20 C/W --- 50 Notes through are on page 10 www.irf.com 1 06/30/05 IRF7805ZPbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) Min. Typ. Max. Units 30 --- --- Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 0.023 5.5 --- 6.8 V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 16A Gate Threshold Voltage --- 1.35 7.0 --- 8.7 2.25 VGS = 4.5V, ID = 13A VDS = VGS, ID = 250A IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current --- --- - 4.7 --- --- 1.0 IGSS Gate-to-Source Forward Leakage --- --- --- --- 150 100 nA VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V Gate-to-Source Reverse Leakage Forward Transconductance --- 64 --- --- -100 --- S VGS = -20V VDS = 15V, ID = 12A Total Gate Charge Pre-Vth Gate-to-Source Charge --- --- 18 4.7 27 --- Post-Vth Gate-to-Source Charge Gate-to-Drain Charge --- --- 1.6 6.2 --- --- Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- 5.5 7.8 --- --- Qoss Output Charge --- 10 --- nC RG td(on) tr Gate Resistance Turn-On Delay Time Rise Time --- --- --- 1.0 11 10 2.1 --- --- td(off) tf Turn-Off Delay Time Fall Time --- --- 14 3.7 --- --- ns Clamped Inductive Load Ciss Coss Input Capacitance Output Capacitance --- --- 2080 480 --- --- pF VGS = 0V VDS = 15V Crss Reverse Transfer Capacitance --- 220 --- VGS(th) VGS(th) gfs Qg Qgs1 Qgs2 Qgd V Conditions Drain-to-Source Breakdown Voltage V VGS = 0V, ID = 250A e e mV/C A VDS = 24V, VGS = 0V VDS = 15V nC VGS = 4.5V ID = 12A See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 12A e = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. --- Max. 72 Units mJ --- 12 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 3.1 ISM (Body Diode) Pulsed Source Current --- --- 120 VSD (Body Diode) Diode Forward Voltage --- --- 1.0 V p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge --- --- 29 20 44 30 ns nC TJ = 25C, IF = 12A, VDD = 15V di/dt = 100A/s ton 2 c Forward Turn-On Time MOSFET symbol A showing the integral reverse e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF7805ZPbF 1000 15V 10V 4.5V 3.75V 3.25V 3.0V 2.75V BOTTOM 2.5V 100 10 1 2.5V 100 10 2.5V 20s PULSE WIDTH Tj = 25C 0.1 20s PULSE WIDTH Tj = 150C 1 0.01 0.1 1 10 100 0.01 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current () VGS 15V 10V 4.5V 3.75V 3.25V 3.0V 2.75V BOTTOM 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1000 VGS 100 T J = 150C 10 T J = 25C 1 2.5 3.0 VDS = 15V 20s PULSE WIDTH 3.5 4.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com ID = 16A VGS = 10V 1.5 1.0 0.5 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7805ZPbF 10000 12 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED VGS, Gate-to-Source Voltage (V) ID= 12A C rss = C gd C, Capacitance (pF) C oss = C ds + C gd Ciss 1000 Coss Crss 8 6 4 2 0 100 1 10 0 100 10 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 20 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.0 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150C 10.0 T J = 25C 1.0 1msec 1 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100sec 10 VGS = 0V 4 VDS= 24V VDS= 15V 10 10msec Tc = 25C Tj = 150C Single Pulse 1.0 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7805ZPbF 2.2 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 16 12 8 4 2.0 1.8 ID = 250A 1.6 1.4 1.2 1.0 0 25 50 75 100 125 -75 150 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) T J , Junction Temperature (C) Fig 10. Threshold Voltage Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJA ) 100 10 D = 0.50 0.20 0.10 0.05 1 0.02 0.01 J 0.1 R1 R1 J 1 R2 R2 R3 R3 C 2 1 3 2 3 4 4 Ci= i/Ri Ci i/Ri 0.01 Ri (C/W) R4 R4 i (sec) 1.081 0.000437 12.880 0.213428 24.191 2.335 11.862 52 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 300 0.03 EAS, Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance ( ) IRF7805ZPbF 0.02 T J = 125C 0.01 TJ = 25C 0.00 2.0 4.0 6.0 8.0 10.0 ID 6.0A 6.9A BOTTOM 12A TOP 250 200 150 100 50 0 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 150 Starting T J, Junction Temperature (C) Fig 12. On-Resistance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy Vs. Drain Current 15V LD VDS L VDS DRIVER + VDD - D.U.T RG VGS 20V IAS tp + V - DD D.U.T A VGS 0.01 Pulse Width < 1s Duty Factor < 0.1% Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 13b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRF7805ZPbF D.U.T Driver Gate Drive P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 16. Gate Charge Test Circuit www.irf.com Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Waveform 7 IRF7805ZPbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput ( 2 Ploss = Irms x Rds(on) ) Power losses in the control switch Q1 are given by; + (Qg x Vg x f ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput Q + oss x Vin x f + (Qrr x Vin x f ) 2 This can be expanded and approximated by; Ploss = (Irms 2 x Rds(on ) ) Qgs 2 Qgd +I x x Vin x f + I x x Vin x f ig ig + (Qg x Vg x f ) + Qoss x Vin x f 2 This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage. 8 *dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Qoss Characteristic www.irf.com IRF7805ZPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) ' ',0 % $ $ + >@ ( ;E >@ $ $ 0,//,0(7(56 0,1 0$; $ E F ' ( H %$6,& %$6,& H + %$6,& %$6,& . / \ $ ; H H ,1&+(6 0,1 0$; .[ & \ >@ ;/ ;F & $ % 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 www.irf.com ;;;; ) '$7(&2'(<:: 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 9 IRF7805ZPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.94mH RG = 25, IAS = 12A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board R is measured at TJ approximately 90C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/05 10 www.irf.com