1/5
BYV54V
BYV541V
May 2000 - Ed : 2E
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
nSUITED FOR SMPS
nVERY LOW FORWARD LOSSES
nNEGLIGIBLE SWITCHING LOSSES
nHIGH SURGE CURRENT CAPABILITY
nHIGH AVALANCHE ENERGYCAPABILITY
nINSULATED :
Insulating voltage = 2500 VRMS
Capacitance = 45 pF
DESCRIPTION
FEATURES
Dual rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in ISOTOPTM this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. ISOTOP
(Plastic)
Symbol Parameter Value Unit
IF(RMS) RMS forward current Per diode 100 A
IF(AV) Average forward current δ= 0.5 Tc=90°C Per diode 50 A
IFSM Surge non repetitive forward current tp=10ms
sinusoidal Per diode 1000 A
Tstg
Tj Storage and junction temperature range -40to+
150
- 40 to + 150
°C
°C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter BYV54V / BYV541V Unit
VRRM Repetitive peak reverse voltage 200 V
ISOTOP is a trademark of STMicroelectronics.
K2 A2
A1K1
BYV541V-200
A2 K1
A1K2
BYV54V-200
BYV54V / BYV541V
2/5
Symbol Test Conditions Min. Typ. Max. Unit
IR*Tj=25°CV
R
=V
RRM 50 µA
Tj= 100°C5mA
V
F** T
j= 125°CI
F
=50A 0.85 V
Tj= 125°CI
F
= 100 A 1.00
Tj=25°CI
F
= 100 A 1.15
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle< 2 %
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj=25°CI
F
= 0.5A
IR=1A Irr = 0.25A 40 ns
IF=1A
V
R= 30V dIF/dt = -50A/µs60
tfr Tj=25°CI
F
=1A
V
FR = 1.1 x VFtr = 5 ns 10 ns
VFP Tj=25°CI
F
= 1A tr = 5 ns 1.5 V
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c) Junction to case Per diode 1.2 °C/W
Total 0.85
Rth (c) Coupling 0.1 °C/W
When the diodes 1 and2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCE
BYV54V / BYV541V
3/5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
200
400
600
800
1000
T
IM
=tp/T tp
IM(A)
P=15W
P=60W
P=45W
P=30W
Fig.2 : Peak current versus form factor.
Tj=125 C
o
IFM(A)
110100500
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 : Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp. )
K= Rth(j-c)
=0.5
=0.2
=0.1
Single pulse
tp(s)
T
=tp/T tp
1.0E-03 1.0E-02 1.0E-01 1.0E+00
K
Fig.4 : Relative variation of thermal impedance
junction to case versus pulseduration.
0 5 10 15 20 25 30 35 40 45 50
0
5
10
15
20
25
30
35
40
45
=0.05
=0.1 =0.2 =0.5
T
=tp/T tp
IF(av)(A)
PF(av)(W)
=1
Fig.1 : Average forward power dissipation versus
average forward current.
0 20 40 60 80 100 120 140 160
0
10
20
30
40
50
60
T
=tp/T tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=Rth(j-c)
Fig.6 : Average current versus ambient
temperature. (dutycycle :0.5)
0.001 0.01 0.1 1
0
100
200
300
400
IM
t
=0.5 t(s)
IM(A)
Tc=25 C
o
Tc=50 C
o
Tc=90 C
o
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
BYV54V / BYV541V
4/5
1 10 100
240
260
280
300
320
340
360
380
400
420
200
VR(V)
F=1Mhz Tj=25 C
o
C(pF)
Fig.7 : Junction capacitance versus reverse
voltage applied (Typical values).
110100
0
10
20
30
40
50
60
70
80
90
100
110
120QRR(nC)
90%CONFIDENCE
IF=IF(av) Tj=100 C
O
Tj=25 C
O
dIF/dt(A/us)
Fig.8 : Recovery charges versus dIF/dt.
Tj( C)
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
IRM
QRR
o
o
Fig.10 : Dynamic parameters versus junction
temperature.
1 10 100
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
20
IRM(A)
Tj=25 C
O
dIF/dt(A/us)
90%CONFIDENCE
Tj=100 C
O
IF=IF(av)
Fig.9 : Peak reverse current versus dIF/dt.
BYV54V / BYV541V
5/5
nMarking : Type number
nCooling method : C
nWeight : 27 g
nEpoxy meets UL94, V0
PACKAGE MECHANICAL DATA
ISOTOP
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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provalof STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics
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