Original Creation Date: 01/14/99
Last Update Date: 05/15/00
Last Major Revision Date: 01/14/99
MNLM158A-X-RH REV 0D1 MICROCIRCUIT DATA SHEET
LOW POWER, DUAL OPERATIONAL AMPLIFIER: ALSO AVAILABLE
GUARANTEED TO 50K RAD (Si) TESTED TO MIL-STD-883,
METHOD 1019.5
General Description
The LM158A consists of two independent, high gain, internally frequency compensated
operational amplifiers which were designed specifically to operate from a single power
supply over a wide range of voltages. Operation from split power supplies is also
possible and the low power supply current drain is independent of magnitude of the power
supply voltage.
Application areas include transducer amplifiers, dc gain blocks and all the conventional
op amp circuits which now can be more easily implemented in single power supply systems.
For example, the LM158A can be directly operated off of the standard +5V DC power supply
voltage which is used in digital systems and will easily provide the required interface
electronics without requiring the additional + 15V DC power supplies.
NS Part Numbers
LM158AH-QMLV
LM158AH/883
LM158AHLQML
LM158AHLQMLV
LM158AJ-QMLV
LM158AJ/883
LM158AJLQML
LM158AJLQMLV
LM158AWG-QMLV
LM158AWG/883
LM158AWGLQML
LM158AWGLQMLV
Industry Part Number
LM158
Prime Die
LM158
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 0D1
Features
- Internally frequency compensated for unity gain
- Large dc voltage gain 100dB
- Wide bandwidth (unity gain temperature compensated) 1MHz
- Wide power supply range:
- Single supply 3V to 32V or dual supplies +1.5V to +16V
- Very low supply current drain (500uA) - essentiely independent of supply voltage
- Low input offset voltage 2mV
- Input common-mode voltage range includes ground
- Differential input voltage range equal to the power supply voltage
- Large output voltage swing 0V to V+ - 1.5V
- CONTROLLING DOCUMENTS:
LM158AH-QMLV 5962-8771002VGA
LM158AH/883 5962-8771002GA
LM158AHLQML 5962L8771002QGA
LM158AHLQMLV 5962L8771002VGA
LM158AJ-QMLV 5962-8771002VPA
LM158AJ/883 5962-8771002PA
LM158AJLQML 5962L8771002QPA
LM158AJLQMLV 5962L8771002VPA
LM158AWG-QMLV 5962-8771002VXA
LM158AWG/883 5962-8771002QXA
LM158AWGLQML 5962L8771002QXA
LM158AWGLQMLV 5962L8771002VXA
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MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 0D1
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage, V+ 32Vdc
Differential Input Voltage 32Vdc
Input Voltage -0.3Vdc to +32Vdc
Power Dissipation
(Note 2) 830 mW
Output Short-Circuit to GND
(Note 3)
(One Amplifier) ContinuousV+ < 15Vdc and TA = 25 C
Maximum Junction Temperature 150 C
Input Current (Vin < -0.3Vdc)
(Note 4) 50mA
Operating Temperature Range -55 C < Ta < +125 C
Storage Temperature Range -65 C < Ta < +150 C
Lead Temperature
(Soldering, 10 seconds) 300 CMETAL CAN 260 CCERDIP 260 CCERAMIC SOIC
Thermal Resistance
ThetaJA 155 C/WMETAL CAN (Still Air) 80 C/W (500LF/Min Air Flow) 132 C/WCERDIP (Still Air) 81 C/W (500LF/Min Air Flow) 195 C/WCERAMIC SOIC (Still Air) 131 C/W (500LF/Min Air Flow)
ThetaJC 42 C/WMETAL CAN 23 C/WCERDIP 33 C/WCERAMIC SOIC
Package Weight
(Typcial) 1000mgMETAL CAN 1100mgCERDIP 220mgCERAMIC SOIC
ESD Tolerance
(Note 5) 250V
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MNLM158A-X-RH REV 0D1 MICROCIRCUIT DATA SHEET
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Short circuits from the output to V+, can cause excessive heating and eventual
destruction. When considering short circuits to ground, the maximum output current is
approximately 40 mA independent of the magnitude of V+. At values of supply voltage
in excess of +15Vdc, continuous short-circuits can exceed the power dissipation
ratings and cause eventual destruction. Destructive dissipation can result from
simultaneous shorts on all amplifiers.
Note 4: This input current will only exist when the voltage at any of the input leads is
driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward baised and thereby acting as input diode clamps. In
addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps
to go to the V+ voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative. This is not destructive and normal output
states will re-establish when the input voltage, which was negative, again returns to
a value greater that -0.3Vdc (at 25C).
Note 5: Human body model, 1.5 K ohms in series with 100 pF.
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MNLM158A-X-RH REV 0D1 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: All voltages referenced to device ground.
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Icc Power Supply
Current V+ = 5V, Rl = 100K, Vo = 1.4V 1.2 mA 1, 2,
3
V+ = 30V, Rl = 100K, Vo = 1.4V 3 mA 1
4 mA 2, 3
Voh Output Voltage
High V+ = 30V, Rl = 2K Ohms 26 V 1, 2,
3
V+ = 30V, Rl = 10K Ohms 27 V 1, 2,
3
Vol Output Voltage
Low V+ = 30V, Rl = 10K Ohms 40 mV 1
100 mV 2, 3
V+ = 30V, Isink = 1uA 40 mV 1
100 mV 2, 3
V+ = 5V, Rl = 10K Ohms 40 mV 1
100 mV 2, 3
Isink Output Sink
Current V+ = 15V, Vout = 200mV, Vin = 65 mV 12 uA 1
V+ = 15V, Vout = 2V, Vin = 65mV 10 mA 1
5 mA 2, 3
Isource Output Source
Current V+ = 15V, Vin = 65mV, Vout = 2V -20 mA 1
-10 mA 2, 3
Ios Short Circuit
Current V+ = 5V, Vout = 0V -60 mA 1
Vio Input Offset
Voltage V+ = 30V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V -2 2 mV 1
-4 4 mV 2, 3
V+ = 30V, Vcm = 28V, Rs = 50 Ohms,
Vo = 1.4V -4 4 mV 2, 3
V+ = 5V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V -2 2 mV 1
-4 4 mV 2, 3
V+ = 30V, Vcm = 28.5V,
Rs = 50 Ohms,Vo = 1.4V -2 2 mV 1
CMRR Common Mode
Rejection Ratio V+ = 30V, Vin = 0V to 28.5V,
Rs = 50 Ohms 70 dB 1
Iib+ Input BIas
Current V+ = 5V, Vcm = 0V -50 -1 nA 1
-100 -1 nA 2, 3
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MNLM158A-X-RH REV 0D1 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: All voltages referenced to device ground.
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Iib- Input BIas
Current V+ = 5V, Vcm = 0V -50 -1 nA 1
-100 -1 nA 2, 3
Iio Input Offset
Current V+ = 5V, Vcm = 0V -10 10 nA 1
-30 30 nA 2, 3
PSRR Power Supply
Rejection Ratio V+ = 5V to 30V, Vcm = 0V 65 dB 1
Vcm Common Mode
Voltage Range V+ = 30V 1 28.5 V 1
1 28.0 V 2, 3
Vdiff Differential
Input Voltage 2 32 V 1, 2,
3
Avs Large Signal Gain V+ = 15V, Rl = 2K Ohms, Vo = 1V to 11V 50 V/mV 4
25 V/mV 5, 6
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: All voltages referenced to device ground. "Delta calculations performed on Jan "S" and "QMLV" devices
at Group B, Subgroup 5 only."
Vio Input Offset
Voltage V+ = 30V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V -0.5 0.5 mV 1
V+ = 30V, Vcm = 28V, Rs = 50 Ohms,
Vo = 1.4V -0.5 0.5 mV 1
V+ = 5V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V -0.5 0.5 mV 1
Iib+ Input Bias
Current V+ = 5V, Vcm = 0V -10 10 nA 1
Iib- Input Bias
Current V+ = 5V, Vcm = 0V -10 10 nA 1
DC/AC PARAMETERS: POST RADIATION LIMITS +25 C
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: All voltages referenced to device ground.
Vio Input Offset
Voltage V+ = 30V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V 3 -4 4 mV 1
V+ = 30V, Vcm = 28V, Rs = 50 Ohms,
Vo = 1.4V 3 -4 4 mV 1
V+ = 5V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V 3 -4 4 mV 1
+Iib Input Bias
Current V+ = 5V, Vcm = 0V 3 -60 -1 nA 1
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MNLM158A-X-RH REV 0D1 MICROCIRCUIT DATA SHEET
Note 1: Parameter tested go-no-go only.
Note 2: Guaranteed parameter not tested.
Note 3: Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics except as listed in the Post Radiation Limits Table. These
parts may be dose rate sensitive in a space environment and demonstrate enhanced low
dose rate effect. Radiation end point limits for the noted parameters are guaranteed
only for the conditions as specified in MIL-STD-883, Method 1019.5.
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MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 0D1
Graphics and Diagrams
GRAPHICS# DESCRIPTION
06354HRB2 CERAMIC SOIC (WG), 10 LEAD (B/I CKT)
08571HRC2 METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (B/I CKT)
09294HR01 CERDIP (J), 8 LEAD (B/I CKT)
H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG)
J08ARL CERDIP (J), 8 LEAD (P/P DWG)
P000273A METAL CAN (H), TO-99, 8 LD, .200 DIA P.C. (PINOUT)
P000274A CERDIP (J), 8 LEAD (PINOUT)
P000461A CERAMIC SOIC (WG), 10 LEAD (PINOUT)
WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
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N
N
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 10
2 9
3 8
4 7
5 6
OUTA
-IN A
+IN A
GND
N/C N/C
+IN B
-IN B
OUT B
10 - LEAD CERAMIC SOIC
TOP VIEW
CONNECTION DIAGRAM
P000461A
V+
LM158AWG, LM158WG
MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 0D1
Revision History
Rev ECN # Rel Date Originator Changes
0A0 M0003236 03/10/00 Rose Malone Initial MDS Release: MNLM158A-X-RH, Rev. 0A0 - Added
Rad Hard Devices and Limits. Replaces MNLM158A-X, Rev.
3A0.
0B1 M0003533 03/23/00 Rose Malone Update MDS: MNLM158A-X-RH, Rev. 0A0 to MNLM158A-X-RH,
Rev. 0B1. Added reference to WG pkg - onto Main Table,
Absolute Section and drawings to graphics section.
0C1 M0003643 05/15/00 Rose Malone Update MDS - MNLM158A-X-RH, Rev. 0B1 to MNLM158A-X-RH,
Rev. 0C1. Corrected typo Package Weight for CERAMIC
SOIC from 200mg to 220mg, in Absolute Maximum Section.
0D1 M0003679 05/15/00 Rose Malone Update MDS: MNLM158A-X-RH, Rev. 0C1 to MNLM158A-X-RH,
Rev. 0D1. Corrected typo's on Main Table, Features
Section and Absolute Section.
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