Advance Technical Information IXFR48N60Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr (Electrically Isolated Tab) = = 600V 32A 154m 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 32 A IDM TC = 25C, Pulse Width Limited by TJM 120 A IA EAS TC = 25C TC = 25C 48 2 A J dv/dt IS IDM, VDD VDSS, TJ 150C 50 V/ns PD TC = 25C 500 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 V 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 24A, Note 1 (c) 2011 IXYS CORPORATION, All Rights Reserved 25 A 1 mA High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 154 m DS100349(06/11) IXFR48N60Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 24A, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 36 S 7020 pF 790 pF 70 pF 0.13 37 ns 11 ns 40 ns 9 ns 140 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 * VDSS, ID = 24A RG = 1 (External) Qg(on) Qgs ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 * VDSS, ID = 24A Qgd 54 nC 60 nC 1 = Gate 2,4 = Drain 3 = Source 0.25 C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 48 A Repetitive, Pulse Width Limited by TJM 192 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 24A, -di/dt = 100A/s 2.2 15.4 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR48N60Q3 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 50 VGS = 10V 100 9V 80 VGS = 10V ID - Amperes ID - Amperes 40 30 20 8V 9V 60 40 8V 10 20 7V 7V 6V 0 0 1 2 3 4 0 5 6 0 7 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 24A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 50 3.4 VGS = 10V 8V VGS = 10V 3.0 R DS(on) - Normalized ID - Amperes 40 30 20 7V 2.6 I D = 48A 2.2 I D = 24A 1.8 1.4 1.0 10 0.6 6V 5V 0 0 2 4 6 8 10 0.2 12 14 16 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 24A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 3.0 VGS = 10V TJ = 125C 30 2.6 25 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 1.8 TJ = 25C 20 15 1.4 10 1.0 5 0 0.6 0 10 20 30 40 50 60 70 ID - Amperes (c) 2011 IXYS CORPORATION, All Rights Reserved 80 90 100 110 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR48N60Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 80 70 70 60 TJ = - 40C 50 g f s - Siemens ID - Amperes 60 50 40 TJ = 125C 25C - 40C 30 25C 40 125C 30 20 20 10 10 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 10.0 10 20 VGS - Volts 40 50 60 70 80 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 160 16 140 14 120 12 100 10 VGS - Volts IS - Amperes 30 80 60 VDS = 300V I D = 24A I G = 10mA 8 6 TJ = 125C 4 40 TJ = 25C 20 2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz 10,000 100 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss Coss 1,000 25s 100s 10 1ms Crss 100 1 TJ = 150C TC = 25C Single Pulse 10ms 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR48N60Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - C / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_48N60Q3(R8) 6-22-11