OPTOELECTRONICS GaAs INFRARED EMITTING DIODE 1N6265 SEATING PLANE je A re L __ Th oD oD4 $71331 SYMBOL INCHES MILLIMETERS NOTES MIN. | MAX. | MIN. | MAX. A 165 3.93 b 016 | 021 | 407 | 533 D 209 | 230 | 5.31 | 5.84 op, | 180 [ 187 | 4.57 | 4.77 e 100NOM. | 2.54NOM. 2 e (050NOM. | 1.27NOM. 2 h 030 76 j 031 | 044 | 79 [1.11 k 036 [| 046 | 92 | 1.16 [ 1 L 1.00 25.4 a 45 | 45 | 45 | 45 3 ( ; | ANODE CATHODE (CONNECTED TO CASE) ST1604 NOTES: The 1N6265 is a 940nm LED in a wide angle, TO-46 package. = Good optical to mechanical alignment m Mechanically and wavelength matched to TO-18 series phototransistor = Hermetically sealed package @ High irradiance level m (*) indicates JEDEC registered values 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAX. DIAMETER .021 (.533mm) MEASURED IN GAUGING PLANE .054 + .001 .000 (137 + 025 - 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO A MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB.OPTOELECTROWIES GaAs INFRARED EMITTING DIODE > > IN NORMALIZED Tee lOGma Tas 20C NORMALIZED POWER OUTPUT Po- NORMALIZED POWER OUTPUT 2 s 2 - WORMALIZED TO Tptldoma Tas 29c 0 ~t9 2 30 78 Tp- FORWARD CURRENT~AMPERES. Ta-AMGIENT TEMPERATURE ~*C Fig. 1. Power Output vs. Input Current Fig. 2. Power Output vs. Temperature ST1007 100 180 Tentaorc zeec > 2 2 = 1 2 : Ip- FORWARO CURRENT ~MILLIAMPERES t z 3 10 4 5s * 7 . VF-FORWARO VOLTAGE ~ VOLTS: Veo FORWARD VOLTAGE VOLTS Fig. 3. Forward Voltage vs. Forward Current 871003 Fig. 4. Forward Voltage vs. Forward Current $T1006 100 RELATIVE OUTPUT - PERCENT A N eo 40 20 6 20 0 oo @- ANGULAR DISPLACEMENT FROM OPTICAL AXIS - DEGREES Fig. 6. 1N6265 Typical Radiation Pattern ST1005 3-133GaAs INFRARED EMITTING DIODE OPTOELECTRONICS *Storage Temperature Operating Temperature ... ccc eee nnn e een seen eevee ener ens 65C to +125C *Soldering: *Lead Temperature (Iron) ... 2.0.00. tence nec e cence 240C for 5 sec.845 *Lead Temperature (FIOW) 2.0.2... cece e nnn eeetneenans 260C for 10 sec.** *Continuous Forward Current... 2.0... ence tent e ete recente brn en etentetnnees 100 mA *Forward Current (pw, 14S; 200 HZ) 00... cc cece een e nee e net b eben beeen teneeenne 10A *Reverse Voltage... 6. een ee ee ence ee becca een b ee een beeteevenee 3 Volts *Power Dissipation (Ty = 25C) 200 cece nee e ete nee ett eeneenenanes 170 mW Power Dissipation (To = 25C) oo een n tenet e teen nee nent en ee 1.3 W 65C to +150C PARAMETER SYMBOL I. . . UNITS *Forward Voltage : v *Reverse Leakage Current pA *Peak Emission Wavelength nm Emission Angle at 12 Power Degrees *Total Power : mw Rise Time 0-90% of output . Bs Fall Time 100-10% of output . BS TEST CONDITIONS | = 100 mA Va = 3V |; = 100 mA |, = 100 mA Derate power dissipation linearly 1.70 mW/C above 25C ambient. . Derate power dissipation linearly 13.0 mW/C above 25C case. . AMA flux is recommended. . Methanol or lsopranol alcohols are recommended as cleaning agents. . Soldering iron tip 46" (1.6 mm) minimum from housing. . As long as leads are not under any stress or spring tension, . Total power output, Po, is the total power radiated by the device into a solid angle of 21 steradians. N&O AO PM