2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications * High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) * Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 10 V Collector current IC 1.5 A Base current IB 0.15 A Collector power dissipation Ta = 25C Tc = 25C Junction temperature Storage temperature range PC 1.0 10 W Tj 150 C Tstg -55 to 150 C JEDEC JEITA TOSHIBA 2-7B1A Weight: 0.36 g (typ.) Equivalent Circuit COLLECTOR BASE EMITTER 1 2004-07-26 2SD1224 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 10 A Emitter cut-off current IEBO VEB = 10 V, IC = 0 10 A V (BR) CEO IC = 10 mA, IB = 0 V Collector-emitter breakdown voltage DC current gain hFE VCE = 2 V, IC = 150 mA 30 4000 Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 1 mA 1.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 1 mA 2.2 V 0.18 0.6 0.3 ton OUTPUT 20 s IB1 Switching time Storage time tstg IB1 INPUT IB2 IB2 15 Turn-on time s VCC 15 V Fall time tf IB1 = -IB2 = 1 mA, DUTY CYCLE 1% Marking D1224 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SD1224 IC - VCE 60 400 50 500 Common emitter Tc = 100C (mA) 500 Common emitter Tc = 25C Collector current IC Collector current IC (mA) IC - VCE 40 300 30 200 20 100 0 0 IB = 10 A 0 1 2 3 Collector-emitter voltage 5 4 VCE 30 400 25 300 20 15 200 10 100 0 0 6 35 (V) IB = 5 A 0 1 2 3 Collector-emitter voltage IC - VCE 5 4 VCE 6 (V) IC - VBE 1.0 Common emitter 160 VCE = 2 V IC (A) 140 400 120 100 300 Collector current Collector current IC (mA) 500 Common emitter Tc = -50C 80 200 60 40 100 0.8 0.6 Tc = 100C 25 -50 0.4 0.2 IB = 20 A 0 0 0 1 2 3 Collector-emitter voltage 5 4 VCE 0 0 6 (V) 0.4 0.8 Base-emitter voltage hFE - IC VBE 2.0 2.4 (V) 10 Collector-emitter saturation voltage VCE (sat) (V) hFE DC current gain 1.6 VCE (sat) - IC 30000 Tc = 100C 10000 25 5000 -50 3000 1000 Common emitter 500 300 0.002 1.2 VCE = 2 V 0.01 0.03 0.1 0.3 1 Collector current IC (A) IC/IB = 1000 3 Tc = -50C 1 0.5 25 0.3 0.1 0.002 3 Common emitter 5 100 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 3 2004-07-26 2SD1224 VBE (sat) - IC PC - Ta 30 PC (W) IC/IB = 1000 10 5 Collector power dissipation Base-emitter saturation voltage VBE (sat) (V) Common emitter 3 Tc = -50C 1 25 0.5 100 0.3 0.1 0.002 0.01 0.03 0.1 0.3 1 10 8 6 4 (2) 2 0 0 Collector current IC (A) (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 x 50 x 0.8 mm (3) No heat sink (1) (3) 40 80 120 160 Ambient temperature 200 Ta 240 280 (C) Safe Operating Area 5 3 IC (A) IC max (pulsed)* IC max (continuous) 1 ms* Collector current 1 10 ms* DC operation Tc = 25C 0.5 0.3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 1 3 VCEO max 10 Collector-emitter voltage 30 VCE (V) 4 2004-07-26 2SD1224 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26