2SD1224
2004-07-26
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1224
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 30 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 10 V
Collector current IC 1.5 A
Base current IB 0.15 A
Ta = 25°C 1.0
Collector power
dissipation Tc = 25°C
PC
10
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Equivalent Circuit
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
BASE
EMITTER
COLLECTOR
2SD1224
2004-07-26
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 30 V, IE = 0 ― ― 10 µA
Emitter cut-off current IEBO V
EB = 10 V, IC = 0 ― ― 10 µA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 30 ― ― V
DC current gain hFE V
CE = 2 V, IC = 150 mA 4000 ― ―
Collector-emitter saturation voltage VCE (sat) I
C = 1 A, IB = 1 mA ― ― 1.5 V
Base-emitter saturation voltage VBE (sat) I
C = 1 A, IB = 1 mA ― ― 2.2 V
Turn-on time ton ― 0.18 ―
Storage time tstg ― 0.6 ―
Switching time
Fall time tf
IB1 = −IB2 = 1 mA,
DUTY CYCLE ≤ 1%
― 0.3 ―
µs
Marking
D1224
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
20 µs
INPUT
IB1
IB2
VCC ≈ 15 V
IB1
15 Ω
IB2
OUTPUT
2SD1224
2004-07-26
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation
voltage VCE (sat) (V)
0
0
Common emitter
Tc = 100°C
500
400
300
200
100
1 2 3 5 6
4
35
IB = 5 µA
30
25
15
10
0
20
0
0
Common emitter
VCE = 2 V
Tc = 100°C
1.0
0.8
0.6
0.4
0.2
0.4 0.8 1.2 2.0 2.4
25
1.6
−50
300
0.002
Common emitter
VCE = 2 V
Tc = 100°C
5000
3000
500
1000
0.01 0.03 0.3 1 3
−50
0.1
10000
30000
25
0.1
0.002
Tc = −50°C
5
3
1
0.5
0.3
0.01 0.03 0.1 1 3
25
0.3
Common emitter
IC/IB = 1000
10
100
0
0
Common emitter
Tc = −50°C
500
400
300
200
100
1 2 3 5 6
4
160
IB = 20 µA
140
120
80
60
0
100
40
0
0
Common emitter
Tc = 2 5 °C 60
IB = 10 µA
500
400
300
200
100
1 2 3 5 6
50
4
40
30
20
0
2SD1224
2004-07-26
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Collector current IC (A)
Collector-emitter voltage VCE (V)
Safe Operating Area
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
0
0
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
40 80 120 160 200 240 280
2
4
6
8
10 (1)
(2)
(3)
30
0.1
0.002
Common emitter
IC/IB = 1000
0.01 0.1
0.3
1
3
5
10
Tc = −50°C
100
0.5
25
0.03 1 0.3
1 30 10 3
*: Single nonrepetitive pulse
Tc = 2 5° C
Curves must be derated linearly
with increase in temperature.
0.1
I
C
max
(
continuous
)
IC max (pulsed)*
DC operation
Tc = 25°C
VCEO max
0.3
0.5
1
3
5
10 ms*
1 ms*
2SD1224
2004-07-26
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030619EAA
RESTRICTIONS ON PRODUCT USE
