VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6620 thru 1N6625
1N6620 thru 1N6625
DESCRIPTION APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 10 00 volts are hermetically sealed with voidless-
glass construction usi ng an internal “Categ ory I” metallurg ical bond. T hese devices
are also availa ble in surface mount ME LF package configurations by adding a “US”
suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requireme nts includin g stand ard, fast and u ltrafast
device types in both through-hole a nd surface mount packages.
Package “A”
Axial
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Microsemi
Scottsdale Division Page 1
FEATURES APPLIC ATIONS / BENE FITS
• Popular JEDEC registered 1N6620 to 1N6625 series
• Voidless hermetically s ealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
• Further options for screening in accordance with
MIL-PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6620, SP6624, etc.
• Surface mount equivalents also avai lable in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N6620US thru 1 N6625US)
• Ultrafast recovery rectifier series 200 to 1000 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +150oC
• Storage Temperature: -65oC to +175oC
• Peak Forward Surge Current @ 25oC: 20 Amps
(except 1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
• Average Rectified For ward Current (IO) at TL= +55oC
(L=.375 inch from body):
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 0.833%/oC for TL> +55oC)
• Average Rectified For ward Current (IO) at TA=25oC:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO
rating is typical for PC boards wher e thermal
resistance from mounting point to ambient is
sufficiently controlled where TJ(max) is not exceeded.)
• Thermal Resistance L= 0.375 inch (RθJL): 38oC/W
• Capacitance at VR= 10 V: 10 pF
• Solder temperature: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 340 mg
• See package dimensions on l ast page
Copyright © 2009
10-06-2009 REV C; SA7-55.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6620 thru 1N6625
1N6620 thru 1N6625
ELECTRICAL CHARACTERISTICS @ 25oC MAXIMUM
REVERSE
CURRENT IR @
VRWM
IR
TYPE
NUMBER MINIMUM
BREAK-
DOWN
VOLTAGE
VR
IR = 50μA
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
WORKING
PEAK
REVERSE
VOLTAGE
VRWM TA=25oC TA=150oC
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
trr
Note 1
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
trr
Note 2
PEAK
RECOVERY
CURRENT
IRM (rec)
IF = 2A,
100A/μs
Note 2
FORWARD
RECOVERY
VOLTAGE
VFRM Max
IF = 0.5A
tfr =12ns
V V @ A V @ A V
μA μA ns ns A V
1N6620 220 1.40V @ 1.2A 1.60V @ 2.0A 200 0.5 150 30 45 3.5 12
1N6621 440 1.40V @ 1.2A 1.60V @ 2.0A 400 0.5 150 30 45 3.5 12
1N6622 660 1.40V @ 1.2A 1.60V @ 2.0A 600 0.5 150 30 45 3.5 12
1N6623 880 1.55V @ 1.0A 1.80V @ 1.5A 800 0.5 150 50 60 4.2 18
1N6624 990 1.55V @ 1.0A 1.80V @ 1.5A 900 0.5 150 50 60 4.2 18
1N6625 1100 1.75V @ 1.0A 1.95V @ 1.5A 1000 1.0 200 60 80 5.0 30
NOTE 1: Low Current Rev erse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specifi ed current.
VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the oper ating
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Reverse Current: The maximum reverse (leakage) current that will flo w at the specified voltage an d
temperature.
C Capacitance: The capacitanc e of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery dec ay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1 FIGURE 2
Typical Forward Current Typical Forward Current
vs vs
Forward Voltage Forward Voltage
Microsemi
Scottsdale Division Page 2
Copyright © 2009
10-06-2009 REV C; SA7-55.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RE
C
TIFIER
S
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6620 thru 1N6625
1N6620 thru 1N6625
FIGURE 3 FIGURE 4
Typical Reverse Current vs. Typical Reverse Current vs.
Applied Reverse Voltage Applied Reverse Voltage
FIGURE 5 FIGURE 6
Average Forward Current vs. Average Forward Current vs
Lead Temperature (50% Duty Cycle, Square Wave) Lead Temperature (50% Duty Cycle, Square Wave )
Microsemi
Scottsdale Division Page 3
Copyright © 2009
10-06-2009 REV C; SA7-55.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6620 thru 1N6625
1N6620 thru 1N6625
IFSM - Forward Pulse Current – (A)
PR – Reverse Pulse Power – (W)
Pulse Duration Pulse Duration
FIGURE 7 FIGURE 8
Forward Pulse Current vs. Reverse Pulse Power vs.
Pulse Duration Pulse Duration
PACKAGE DIMENSIONS
Lead tolerance = +0.002/-0.003 inches
Copyright © 2009
10-06-2009 REV C; SA7-55.pdf
