FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARA CTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
DO-35
min. 1.08 3 ( 27.5)
min. 1.0 83 (27. 5) max. .150 (3.8)
max.∅
Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
5/98
216
BAT48
Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 40 V
Forward C ontinuous Current at Tamb = 25 °C IF3501) mA
Repetitive Peak Forward Current
at tp < 1 s, δ < 0.5, Tamb = 25 °C IFRM 11) A
Surge Forward Current at tp < 10 ms, Tamb = 25 °C IFSM 7.51) A
Power Dissipation1) at Tamb = 65 °C Ptot 3301) mW
Junction Temperature Tj125 °C
Ambient Operating Temperature Range Tamb –65 to +125 °C
Storage Temperature Range TS–6 5 to +150 °C
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
For general purpose applications.
These diodes feature very low
turn-on vo ltage an d f a st switch i ng .
The se dev ic es are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
This diode is also available in the Mini-MELF
case with type designations LL46.
.
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NEW PRODUCT NEW PRODUCT NEW PRODUCT
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
217
BAT48
Symbol Min. Typ. Max. Unit
Reverse Breakdown Voltage
tested with 100 µA Pulses V(BR)R 40––V
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
at IF = 0.1 mA
at IF = 10 mA
at IF = 250 mA
VF
VF
VF
–
–
–
–
–
–
0.25
0.40
0.90
V
V
V
Leakage Cu rre nt
Pulse Test tp < 300 µs, δ < 2%
at VR = 10 V
at VR = 10 V, Tj = 60 °C
at VR = 20 V
at VR = 20 V, Tj = 60 °C
at VR = 40 V
at VR = 40 V, Tj = 60 °C
IR
IR
IR
IR
IR
IR
–
–
–
–
–
–
–
–
–
–
–
–
2
15
5
25
25
50
µA
µA
µA
µA
µA
µA
Capacitance
at VR = 1 V, f = 1 MHz Ctot –12–pF
Thermal Resistance Junction to Ambient Air RthJA ––0.3
1) K/mW
1) Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature (DO-35)
