BAT 62-02W Silicon Schottky Diode * Low barrier diode for detectors up to GHz 2 frequencies 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration Package BAT 62-02W L 1=C SCD-80 Q62702-A1028 2=A Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 40 V Forward current IF 40 mA Junction temperature Tj 150 C Storage temperature Tstg -55 ...+150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA 650 RthJS 810 K/W 1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Jul-02-1998 1998-11-01 BAT 62-02W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 A VF - 0.58 1 V CT - 0.35 0.6 pF CC - 0.09 - R0 - 225 - k Ls - 0.6 - nH DC characteristics Reverse current VR = 40 V Forward voltage I F = 2 mA AC characteristics Diode capacitance VR = 1 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-02-1998 1998-11-01 BAT 62-02W Forward current IF = f (TA*;TS) * Package mounted on epoxy 50 mA TS IF TA 30 20 10 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 1 IFmax / IFDC 10 3 K/W RthJS D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp Semiconductor Group Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Jul-02-1998 1998-11-01 BAT 62-02W Forward current IF = f (V F) Leakage current I R = f (VR) TA = Parameter T A = parameter 10 3 10 4 uA uA T A = 125C IF 10 10 3 T A = 85C IR TA = 25C TA = 85C TA = 125C TA = -40C 2 10 1 10 2 T A = 25C 10 0 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 10 -1 0 2.0 5 10 15 20 25 V 30 VF 40 VR Diode capacitance CT = f (V R) f = 1MHz Rectifier voltage Vout = f (Vin) f = 900 MHz RL = parameter in k 10 4 mV 0.5 10 3 pF CT VO 10 2 0.3 10 1 10 0 1000 500 200 100 50 20 0.2 10 -1 0.1 10 -2 0.0 0 5 10 15 20 V 10 -3 0 10 30 VR Semiconductor Group Semiconductor Group RL=10 10 1 10 2 10 3 mV 10 4 VI 44 Jul-02-1998 1998-11-01