DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features BVDSS RDS(ON) Max 20V 13m @ VGS = 4.5V 14m @ VGS = 4.0V 17m @ VGS = 3.1V 18m @ VGS = 2.5V 28m @ VGS = 1.8V ID TA = +25C 9.0A 8.7A 8.0A 6.7A 6.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Power Management Functions Battery Pack Load Switch Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Case: U-DFN2030-6 (Type B) Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.012 grams (Approximate) D2 D1 U-DFN2030-6 (Type B) G1 G2 Gate Protection Diode S1 Gate Protection Diode S2 ESD PROTECTED TO 2kV Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMN2014LHAB-7 DMN2014LHAB-13 Notes: Case U-DFN2030-6 (Type B) U-DFN2030-6 (Type B) Packaging 3,000 / Tape & Reel 10,000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION Product Summary 24W = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 for 2016) WW = Week code (01 to 53) 24W DMN2014LHAB Document number: DS36441 Rev. 3 - 2 1 of 6 www.diodes.com February 2016 (c) Diodes Incorporated DMN2014LHAB Maximum Ratings (@TA = +25C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V TA = +25C TA = +70C TA = +25C TA = +70C Steady State t < 10s Value 20 12 9.0 7.1 ID A 9.3 7.4 45 ID Pulsed Drain Current (10s Pulse, Duty Cycle = 1% ) Unit V V IDM A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25C TA = +70C Steady State t < 10s TA = +25C TA = +70C Steady State t < 10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Value 0.8 0.5 157 148 1.7 1.1 73.7 68 9.4 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Units W C/W W C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 -- -- -- -- -- -- 1.0 10 V A A VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) 0.3 RDS(ON) -- |Yfs| VSD -- -- 1.1 13 14 17 18 28 -- 1.0 V Static Drain-Source On-Resistance 0.71 10 11 12 13 19 25 0.75 VDS = VGS, ID = 250A VGS = 4.5V, ID = 4.0A VGS = 4.0V, ID = 4.0A VGS = 3.1V, ID = 4.0A VGS = 2.5V, ID = 4.0A VGS = 1.8V, ID = 3.5A VDS = 5V, ID = 6A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd -- -- -- -- -- -- -- -- -- -- -- -- 1550 166 145 1.37 8.4 16 2.3 2.5 6.9 15.5 40.9 12 -- -- -- -- -- -- -- -- -- -- -- -- Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 2.5V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(ON) tR tD(OFF) tF m S V pF pF pF nC nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 6A VDD = 10V, RL = 1.7, VGS = 5.0V, Rg = 3 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad 7. Repetitive rating, pulse width limited by junction temperature 8. Guaranteed by design. Not subject to product testing DMN2014LHAB Document number: DS36441 Rev. 3 - 2 2 of 6 www.diodes.com February 2016 (c) Diodes Incorporated DMN2014LHAB 30 18 20 VGS = 1.8V 15 VGS = 1.5V 10 12 10 8 TA = 150 6 TA = 125 TA = 85 TA = 25 2 VGS = 1.2V 0 TA = -55 0 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 2.0 0.016 0.014 0.012 VGS = 2.5V 0.010 VGS = 4.5V 0.008 0.006 0.004 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V ID = 5A 1.6 VGS = 3.6V ID = 3A 1.4 VGS = 2 .5V ID = 1A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMN2014LHAB Document number: DS36441 Rev. 3 - 2 2.0 VGS = 4.5V TA = 150 0.015 TA = 125 TA = 85 0.010 TA = 25 TA = -55 0.005 0 30 1.8 0.5 1.0 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.020 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.018 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 14 4 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VDS = 5.0V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 ADVANCE INFORMATION 20 VGS = 2.5V VGS = 3.0V VGS = 3.5V VGS = 4.0V VGS = 4.5V VGS = 10V 0 5 10 15 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.020 0.018 VGS = 2.5 V ID = 1A 0.016 VGS = 3.6V ID = 3A 0.014 0.012 VGS = 4.5V ID = 5A 0.010 0.008 0.006 0.004 -50 3 of 6 www.diodes.com -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature February 2016 (c) Diodes Incorporated DMN2014LHAB VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 10 Ciss 1,000 C oss 100 Crss f = 1MHz 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 7 Typical Junction Capacitance 6 4 2 0 20 VDS = 10V I D = 6A 8 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Figure 8 Gate Charge 40 100 RDS(ON) Limited ID, DRAIN CURRENT (A) PW =100s 10 PW =1ms 1 0.1 0.01 PW =10ms PW =100ms TJ(Max) = 150 PW =1s TC = 25 PW =10s Single Pulse DC DUT on 1*MRP Board VGS= 4.5V 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1,000 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 R JA(t) = r(t) * R JA /W R JA = 100 Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMN2014LHAB Document number: DS36441 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 10 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1,000 February 2016 (c) Diodes Incorporated DMN2014LHAB Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2030-6 (Type B) A3 A Seating Plane A1 D Dim A A1 A3 b D D2 E E2 e L z e D2 E E2 Pin#1 ID U-DFN2030-6 (Type B) Min Max Typ 0.55 0.65 0.60 0.00 0.05 0.02 --0.15 0.20 0.30 0.25 1.95 2.05 2.00 1.40 1.60 1.50 2.95 3.05 3.00 1.65 1.75 1.70 --0.50 0.28 0.38 0.33 --0.375 All Dimensions in mm L z(4x) b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2030-6 (Type B) X3 Dimensions X2 Y2 Y1 G X1 DMN2014LHAB Document number: DS36441 Rev. 3 - 2 X G X X1 X2 X3 Y Y1 Y2 Value (in mm) 0.220 0.350 0.850 1.600 1.350 0.530 1.800 3.300 Y 5 of 6 www.diodes.com February 2016 (c) Diodes Incorporated DMN2014LHAB ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2016, Diodes Incorporated www.diodes.com DMN2014LHAB Document number: DS36441 Rev. 3 - 2 6 of 6 www.diodes.com February 2016 (c) Diodes Incorporated