DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
1 of 6
www.diodes.com
February 2016
© Diodes Incorporated
DMN2014LHAB
ADVANCE INFO R MA T I O N
D1
S1
G1
GateProtection
Diode
D2
S2
G2
Gate Protection
Diode
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
ID
TA = +25°C
20V
13mΩ @ VGS = 4.5V
9.0A
14mΩ @ VGS = 4.0V
8.7A
17mΩ @ VGS = 3.1V
8.0A
18mΩ @ VGS = 2.5V
6.7A
28mΩ @ VGS = 1.8V
6.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Power Management Functions
Battery Pack
Load Switch
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2030-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.012 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN2014LHAB-7
U-DFN2030-6 (Type B)
3,000 / Tape & Reel
DMN2014LHAB-13
U-DFN2030-6 (Type B)
10,000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
24W = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 for 2016)
WW = Week code (01 to 53)
Bottom View
U-DFN2030-6
(Type B)
24W
Y
Y
W
W
Equivalent Circuit
Top View
ESD PROTECTED TO 2kV
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
2 of 6
www.diodes.com
February 2016
© Diodes Incorporated
DMN2014LHAB
ADVANCE INFO R MA T I O N
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
9.0
7.1
A
t < 10s
TA = +25C
TA = +70C
ID
9.3
7.4
A
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1% )
IDM
45
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
0.8
W
TA = +70°C
0.5
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
157
°C/W
t < 10s
148
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.7
W
TA = +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
73.7
°C/W
t < 10s
68
Thermal Resistance, Junction to Case
RθJC
9.4
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
20
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1.0
μA
VDS = 20V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
μA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.3
0.71
1.1
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
10
13
mΩ
VGS = 4.5V, ID = 4.0A
11
14
VGS = 4.0V, ID = 4.0A
12
17
VGS = 3.1V, ID = 4.0A
13
18
VGS = 2.5V, ID = 4.0A
19
28
VGS = 1.8V, ID = 3.5A
Forward Transfer Admittance
|Yfs|
—
25
—
S
VDS = 5V, ID = 6A
Diode Forward Voltage
VSD
—
0.75
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
1550
—
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
166
—
pF
Reverse Transfer Capacitance
Crss
—
145
—
pF
Gate Resistance
Rg
—
1.37
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 2.5V)
Qg
—
8.4
—
nC
VDS = 10V, ID = 6A
Total Gate Charge (VGS = 4.5V)
Qg
—
16
—
nC
Gate-Source Charge
Qgs
—
2.3
—
nC
Gate-Drain Charge
Qgd
—
2.5
—
nC
Turn-On Delay Time
tD(ON)
—
6.9
—
ns
VDD = 10V, RL = 1.7Ω,
VGS = 5.0V, Rg = 3Ω
Turn-On Rise Time
tR
—
15.5
—
ns
Turn-Off Delay Time
tD(OFF)
—
40.9
—
ns
Turn-Off Fall Time
tF
—
12
—
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad
7. Repetitive rating, pulse width limited by junction temperature
8. Guaranteed by design. Not subject to product testing
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
3 of 6
www.diodes.com
February 2016
© Diodes Incorporated
DMN2014LHAB
ADVANCE INFO R MA T I O N
10
15
20
25
30
0 0.5 1.0 1.5 2.0
0
5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I , DRAIN CURRENT (A)
D
V = 1.2V
GS
V = 1.5V
GS
V = 1.8V
GS
V = 2.5V
GS
V = 3.0V
V = 3.5V
V = 4.0V
V = 4.5V
V = 10V
GS
GS
GS
GS
GS
10
12
14
16
18
20
0 0.5 1.0 1.5 2.0
0
2
4
6
8
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I , DRAIN CURRENT (A)
D
V = 5.0V
DS
T = 150
癈
A
T = 125
癈
AT = 85
癈
A
T = 25
癈
A
T = -55
癈
A
0.004
0.006
0.008
0.012
0.014
0.016
0.018
0 5 10 15 20 25 30
0.010
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 2.5V
GS
V = 4.5V
GS
0.005
0.015
0 5 10 15 20
0
0.010
0.020
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55
癈
A
T = 25
癈
A
T = 85
癈
A
T = 125
癈
A
T = 150
癈
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.8
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
1.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
V = .5V
I = 1A
GS
D
2
V = V
I = 3A
GS
D
3.6
V = V
I = 5A
GS
D
4.5
0.004
0.006
0.008
0.012
0.014
0.016
0.018
0.010
0.020
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = V
I = 1A
GS
D
2.5
V = V
I = 3A
GS
D
3.6
V = 4.5V
I = 5A
GS
D
℃
℃
℃
℃
℃
℃
℃
℃
℃
℃
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
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February 2016
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ADVANCE INFO R MA T I O N
0 2 4 6 8 10 12 14 16 18 20
1,000
C , JUNCTION CAPACITANCE (pF)
T
100
10
1,000
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 7 Typical Junction Capacitance
Ciss
Coss
Crss
f = 1MHz
0 5 10 15 20 25 30 35 40
Q (nC)
g, TOTAL GATE CHARGE
Figure 8 Gate Charge
0
2
4
6
8
V GATE THRESHOLD VOLTAGE (V)
GS
10
V = 10V
I = A
DS
D
6
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
0.001
r(t), TRANSIENT THERMAL RESISTANCE
0.01
0.1
1
R (t) = r(t) * R
R = 100
癈
/W
Duty Cycle, D = t1/ t2
JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. SOA, Safe Operation Area
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 4.5V
PW=10s
PW=10ms
PW=100µs
DC
RDS(ON) Limited
PW=1ms
PW=100ms
PW=1s
℃
10
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
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February 2016
© Diodes Incorporated
DMN2014LHAB
ADVANCE INFO R MA T I O N
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2030-6 (Type B)
U-DFN2030-6
(Type B)
Dim
Min
Max
Typ
A
0.55
0.65
0.60
A1
0.00
0.05
0.02
A3
--
--
0.15
b
0.20
0.30
0.25
D
1.95
2.05
2.00
D2
1.40
1.60
1.50
E
2.95
3.05
3.00
E2
1.65
1.75
1.70
e
--
--
0.50
L
0.28
0.38
0.33
z
--
--
0.375
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2030-6 (Type B)
Dimensions
Value
(in mm)
G
0.220
X
0.350
X1
0.850
X2
1.600
X3
1.350
Y
0.530
Y1
1.800
Y2
3.300
D
E
e
b
L
E2
z(4x)
A
A1
A3
Seating Plane
D2
Pin#1 ID
Y1
Y
XX1
X2
Y2
G
X3
DMN2014LHAB
Document number: DS36441 Rev. 3 - 2
6 of 6
www.diodes.com
February 2016
© Diodes Incorporated
DMN2014LHAB
ADVANCE INFO R MA T I O N
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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failure of the life support device or to affect its safety or effectiveness.
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