Industrial & Multimarket
Data Sheet
Rev. 2.0, 2011-05-13
Final
CoolMOS E6
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
drain
pin 2
gate
pin 1
source
pin 3
650V CoolMOS™ E6 Power Transistor IPA65R190E6, IPB65R190E6
IPI65R190E6, IPP65R190E6
IPW65R190E6
Final Data Sheet 2 Rev. 2.0, 2011-05-13
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more comp act, lighter , and cooler .
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
1) J-STD20 and JESD22
Table 1 Key Performance Parameters
Parameter Value Unit
VDS @ Tj,max 700 V
RDS(on),max 0.19
Qg,typ 73 nC
ID,pulse 66 A
Eoss @ 400V 5.9 µJ
Body diode di/dt500 A/µs
Type / Ordering Code Package Marking Related Links
IPW65R190E6 PG-TO247 IFX CoolMOS Webpage
IPB65R190E6 PG-TO263 IFX Design tools
IPI65R190E6 PG-TO262 65E6190
IPP65R190E6 PG-TO220
IPA65R190E6 PG-TO220 FullPAK
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Table of Contents
Final Data Sheet 3 Rev. 2.0, 2011-05-13
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical chara cteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Test circ u i t s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table of Contents
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Maximum ratings
Final Data Sheet 4 Rev. 2.0, 2011-05-13
2Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current1)
1) Limited by Tj,max. Maximum duty cycle D=0.75
ID--20.2 ATC= 25 °C
12.8 TC= 100°C
Pulsed drain current2)
2) Pulse width tp limited by Tj,max
ID,pulse --66 ATC=25 °C
Avalanche energy, single pulse EAS --485 mJID=3.5 A,VDD=50 V
Avalanche energy, repetitive EAR - - 0.73 ID=3.5 A,VDD=50 V
Avalanche current, repetitive IAR --3.5 A
MOSFET dv /dt rug ged ne s s dv/dt - - 50 V/ns VDS=0...480 V
Gate source voltage VGS -20 - 20 V static
-30 30 AC (f>1 Hz)
Power dissipation for
TO-220, TO-247, TO-262, TO-263 Ptot --151 WTC=25 °C
Power dissipation for
TO-220 FullPAK Ptot --34
Operating and storage temperature Tj,Tstg -55 - 150 °C
Mounting torque
TO-220, TO-247 - - 60 Ncm M3 and M3.5 screws
Mounting torque
TO-220 FullPAK 50 M2.5 screws
Continuous diode forward current IS--17.5 ATC=25 °C
Diode pulse current2) IS,pulse --66 ATC=25 °C
Reverse diode dv/dt3)
3) Identical low side and high side switch with identical RG
dv/dt - - 15 V/ns VDS=0...400 V,ISD ID,
Tj=25 °C
Maximum diode commutation
speed3) dif/dt 500 A/µs
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Thermal characteristics
Final Data Sheet 5 Rev. 2.0, 2011-05-13
3 Thermal characteristics
Table 3 Thermal characteristics non FullPAK
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.83 °C/W
Thermal resistance, junction -
ambient RthJA - - 62 leaded
Soldering temperature ,
wavesoldering only allowed at
leads
Tsold - - 260 °C 1.6 mm (0.063 in.)
from case for 10 s
Table 4 Thermal characteristics FullPAK
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case RthJC --3.7°C/W
Thermal resistance, junction -
ambient RthJA - - 80 leaded
Soldering temperature ,
wavesoldering only allowed at
leads
Tsold - - 260 °C 1.6 mm (0.063 in.)
from case for 10 s
Table 5 Thermal characteristics SMD
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.83 °C/W
Thermal resistance, junction -
ambient RthJA - - 62 SMD version, device
on PCB, minimal
footprint
- 35 - SMD version, device
on PCB, 6cm2 cooling
area1)
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Soldering temperature,
wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL1
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics
Final Data Sheet 6 Rev. 2.0, 2011-05-13
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 6 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0 V, ID=1.0 mA
Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS, ID=0.73 mA
Zero gate voltage drain current IDSS --1µAVDS=650 V, VGS=0 V,
Tj=25 °C
-10- VDS=650 V, VGS=0 V,
Tj=150 °C
Gate-source leakage current IGSS - - 100 nA VGS=20 V , VDS=0 V
Drain-source on-state resistance RDS(on) -0.170.19VGS=10 V, ID=7.3 A,
Tj=25 °C
-0.44- VGS=10 V, ID=7.3 A,
Tj=150 °C
Gate resistance RG-6-f=1 MHz, open dra in
Table 7 Dyn ami c ch a r acte ris tic s
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Input capacitance Ciss -1620-pFVGS=0 V, VDS=100 V,
f=1 MHz
Output capacitance Coss -98-
Effective output capacitance,
energy related1)
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
Co(er) -65- VGS=0 V,
VDS=0...480 V
Effective output capacitance, time
related2)
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Co(tr) -308- ID=constant, VGS=0 V
VDS=0...480V
Turn-on dela y time td(on) -12-nsVDD=400 V,
VGS=13 V, ID=11 A,
RG=3.4
Rise time tr-11-
Turn-off delay time td(off) -112-
Fall time tf-10-
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics
Final Data Sheet 7 Rev. 2.0, 2011-05-13
Table 8 Gate charge characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Gate to sour ce charge Qgs -8.9-nCVDD=480 V, ID=11 A,
VGS=0 to 10 V
Gate to drain charge Qgd -38-
Gate charge total Qg-73-
Gate plateau voltage Vplateau -5.5-V
Table 9 Reverse diode characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Diode forward voltage VSD -0.9-VVGS=0 V, IF=11 A,
Tj=25 °C
Reverse recovery time trr -410-nsVR=400 V, IF=11 A,
diF/dt=100 A/µs
Reverse reco very charge Qrr -6.1-µC
Peak reverse recovery current Irrm -28-A
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Final Data Sheet 8 Rev. 2.0, 2011-05-13
5 Electrical characteristics diagrams
Table 10
Power dissipation
Non FullPAK Power dissipation
FullPAK
Ptot = f(TC) Ptot = f(TC)
Table 11
Max. transient thermal impedance
Non FullPAK Max. transient thermal impedance
FullPAK
Z(thJC)=f(tp); parameter: D=tp/T Z(thJC)=f(tp); parameter: D=tp/T
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Final Data Sheet 9 Rev. 2.0, 2011-05-13
Table 12
Safe operating area TC=25 °C
Non FullPAK Safe operating area TC=25 °C
FullPAK
ID=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter tp ID=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter tp
Table 13
Safe operating area TC=80 °C
Non FullPAK Safe operating area TC=80 °C
FullPAK
ID=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter tp ID=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter tp
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Final Data Sheet 10 Rev. 2.0, 2011-05-13
Table 14
Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS
Table 15
Typ. drain-source on- state resistance Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=7.3 A; VGS=10 V
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Final Data Sheet 11 Rev. 2.0, 2011-05-13
Table 16
Typ. transfer characteristics Typ. gate charge
ID=f(VGS); VDS=20V VGS=f(Qgate), ID=11 A pulsed
Table 17
Avalanche energy Drain-source breakdown voltage
EAS=f(Tj); ID=3.5 A; VDD=50 V VBR(DSS)=f(Tj); ID=1.0 mA
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Final Data Sheet 12 Rev. 2.0, 2011-05-13
Table 18
Typ. capacitances Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS)
Table 19
Forward characteristics of reverse diode
IF=f(VSD); parameter: Tj
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Test circuits
Final Data Sheet 13 Rev. 2.0, 2011-05-13
6 Test circuits
Table 20 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load Switching time waveform
Table 21 Unclamped inductive load test circuit and wavefor m
Unclamped inductiv e load test circuit Unclamped inductive waveform
Table 22 Test circuit and waveform for diode characteristics
Test circuit for diode characteristics Diode recovery waveform
V
DS
V
GS
VDS
VGS
t
d(on)
t
d( off)
t
r
t
on
t
f
t
off
10%
90%
V
DS
I
D
V
DS
V
D
V
(BR)DS
I
D
V
DS
V
DS
I
D
R
G1
R
G2
R
G1
= R
G2
Ι
F
dit/d
t
rr
10%
90%
Ι
RRM
RRM
Ι
t
RRM
Ι
v
SIL00088
Q
F
v
i
F
Q
S
RRM
V
S
tt
F
/did
rr
t
rr
tt
S
t
F
=+
=
rr
QQ
SF
+
Q
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
Final Data Sheet 14 Rev. 2.0, 2011-05-13
7 Package outlines
Figure 1 Outlines TO-247, dimensions in mm/inches
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
Final Data Sheet 15 Rev. 2.0, 2011-05-13
Figure 2 Outlines TO-220, dimensions in mm/inches
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
Final Data Sheet 16 Rev. 2.0, 2011-05-13
Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
Final Data Sheet 17 Rev. 2.0, 2011-05-13
Figure 4 Outlines TO-262, dimensions in mm/inches
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
Final Data Sheet 18 Rev. 2.0, 2011-05-13
Figure 5 Outlines TO-263, dimensions in mm/inches
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Revision History
Final Data Sheet 19 Rev. 2.0, 2011-05-13
8 Revision History
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Edition 2011-05-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the typ es in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written approval
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life-support, automotive, aviation and aerospace device or system or to affect the safe ty or effectiveness of that
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Revision History: 2011-05-13, Rev. 2.0
Previous Revision:
Revision Subjects (major changes since last revision)
2.0 R elease of final data sheet
