SPECIFICATION Device Name : IGBT module (RoHS compliant product) Type Name Spec. No. : : 2MBI400U2B-060-50 MS5F6562 Apr. 21 '06 K.Muramatsu Apr. 21 '06 M.W atanabe T.Miyasaka K.Yamada MS5F6562 a 1 14 H04-004-07b R e v i s e d Date Classification Apr.-21 -'06 Enactment Aug.-09 -'06 Revision Ind. Content R e c o r d s Applied date Drawn Issued date a Revised Reliability test results (P9/14) K.Muramatsu Checked Checked Approved M.W atanabe K.Yamada T.Miyasaka K.Yamada T.Miyasaka S.Ogawa MS5F6562 a 2 14 H04-004-06b 2MBI400U2B-060-50 (RoHS compliant product) 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit MS5F6562 a 3 14 H04-004-03a 3.Absolute Maximum Ratings ( at Tc= 25 unless otherwise specified Items Symbols Collector-Emitter voltage Gate-Emitter voltage VCES VGES Ic Icp Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Maximum Ratings Units 650 20 400 800 Continuous 1ms V V A -Ic 400 -Ic pluse Pc Tj Tstg 800 1250 150 -40 +125 Viso Screw Torque Conditions 1 device AC : 1min. W 2500 Mounting *2 3.5 Terminals *2 3.5 VAC Nm (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5) Terminals 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25 unless otherwise specified) Items Symbols Zero gate voltage Collector current ICES Gate-Emitter leakage current IGES Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip *3 Char acter istics min. typ. max. Conditions VGE = 0V VCE = 600V VCE = 0V VGE=20V Units - - 2.0 mA - - 400 nA 6.2 6.7 7.7 V Tj= 25 Tj=125 - 2.25 2.50 2.55 - Tj= 25 Tj=125 VCE=10V,VGE=0V,f=1MHz Vcc = 300V - 1.85 2.10 29.0 0.40 1.20 tr Ic = 400A - 0.22 0.60 tr (i) toff VGE=15V Rg = 6.8 - 0.16 0.48 1.20 0.07 2.00 2.05 0.45 2.35 - VGE(th) VCE = 20V Ic = 400mA VCE(sat) (terminal) VGE=15V VCE(sat) (chip) Ic = 400A Cies ton tf VF (terminal) VGE=0V Tj= 25 Tj=125 - VF (chip) IF = 400A Tj= 25 Tj=125 - 1.60 1.65 - - 0.97 0.35 - R lead IF = 400A V nF s V s m (*3)Biggest internal terminal resistance among arm. MS5F6562 a 4 14 H04-004-03a 5. Thermal resistance characteristics Items Symbols Thermal resistance(1device) Rth(j-c) Contact Thermal resistance (1device) *4 Rth(c-f) Conditions min. Char acter istics typ. max. IGBT - - 0.10 FWD - - 0.16 with Thermal Compound - 0.025 - Units /W (*4) This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module Logo of pr oduction 2MBI400U2B-060-50 400A 600V Lot.No. Place of manufactur ing (code) 7.Applicable category This specification is applied to IGBT Module named 2MBI400U2B-060-50 . 8.Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time 90% 0V 0V V GE L trr Irr 0V 0A V CE Ic 90% Ic 90% 10% 10% RG VCE Vcc 10% VCE tr(i) V GE Ic tr tf toff ton 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F6562 a 5 14 H04-004-03a 11. List of material () (Total weight of soldering material(typ) : 6.4 g) No. Parts Material (main) Ref. 1 Base Plate Cu Ni plating 2 Main terminal Cu Ni plating 3 Sub terminal Cu or Brass Ni plating 4 Cover PPS resin UL 94V-0 5 Case PPS resin UL 94V-0 6 Isolation substrate Al2O3 + Cu 7 IGBT chip Silicon (Not drawn in above) 8 FWD chip Silicon (Not drawn in above) 9 Wiring Aluminum 10 Silicone Gel Silicone resin 11 Adhesive Silicone resin 12 Solder 13 (Under chip) Solder (Under Isolation substrate ) Solder 14 (Between terminal Sn/Ag base (Not drawn in above) Sn/Ag base (Not drawn in above) Sn/Ag base (Not drawn in above) Paper (Not drawn in above) and Isolation substrate) 15 Label 16 Nut Fe 17 Ring Brass Trivalent Chromate treatment 12. RoHS Directive Compliance(RoHS IGBTRoHSMS5F6209 (MS5F6212) The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT Module. The Japanese Edition(MS5F6212) is made into a reference grade. MS5F6562 a 6 14 H04-004-03a 13. Reliability test results Reliability Test Items Mechanical Tests Test categories Test items Test methods and conditions (Aug.-2001 edition) 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Environment Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 Temperature Cycle Test temp. : : : : : 40N 101 sec. 2.5 ~ 3.5 Nm (M5) 101 sec. Test Method 401 Method Test Method 402 method 5 (0:1) 5 (0:1) Test Method 403 Reference 1 Condition code B 5 (0:1) Test Method 404 Condition code B 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 Test code C 5 (0:1) Test Method 103 Test code E 5 (0:1) Test Method 105 5 (0:1) Test Method 307 method Condition code A 5 (0:1) Low temp. -405 High temp. 125 5 Number of cycles RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 +5 -0 Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F6562 a 7 14 H04-004-03a Reliability Test Items Test categories Test items Reference Number Acceptnorms of ance EIAJ ED-4701 sample number Test methods and conditions (Aug.-2001 edition) 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Endurance Endurance Tests Tests Test duration 2 High temperature Bias (for gate) Test duration : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Number of cycles : Test temp. Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 101 5 (0:1) Test Method 101 5 (0:1) Test Method 102 Condition code C 5 (0:1) Test Method 106 5 (0:1) : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. o 852 C 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles Failure Criteria Item Electrical characteristic Characteristic Leakage current Symbol - USLx2 USLx2 mA A Gate threshold voltage VGE(th) LSLx0.8 USLx1.2 mA Saturation voltage VCE(sat) - USLx1.2 V - USLx1.2 USLx1.2 V mV - USLx1.2 mV resistance VF VGE or FWD Isolation voltage inspection Unit ICES IGES Forward voltage Thermal IGBT Visual Failure criteria Lower limit Upper limit Note VCE VF Viso Broken insulation - - The visual sample - Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F6562 a 8 14 H04-004-03a Reliability Test Results Mechanical Tests Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 5 0 5 0 Method Test Method 402 method 3 Vibration Test Method 403 5 0 4 Shock Condition code B Test Method 404 5 0 Environment Tests Condition code B 1 High Temperature Storage Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Test Method 103 5 0 5 0 5 Temperature Cycle Test Method 105 5 6 Thermal Shock Test Method 307 5 0 1 High temperature Reverse Bias Test Method 101 5 0 Test Method 101 5 0 Test Method 102 5 0 5 0 Test code C Test Method 103 Test code E a 0 method Endurance Tests Condition code A 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias Condition code C 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 106 MS5F6562 a 9 14 H04-004-03a Collector current vs. Collector-Emitter voltage (typ.) Tj= 25 / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125 / chip 1000 1000 VGE=20V15V 12V VGE=20V15V 800 Collector current : Ic [A] Collector current : Ic [A] 800 10V 600 400 12V 10V 600 400 200 200 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 3 4 5 Tj=25 Collector - Emitter voltage : VCE [ V ] 10.0 800 Collector current : Ic [A] 2 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 1000 Tj=125 600 400 200 0 8.0 6.0 4.0 Ic=800A Ic=400A Ic=200A 2.0 0.0 0 1 2 3 4 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Vcc=300V Ic=400ATj= 25 Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] 1 Collector-Emitter voltage : VCE [V] Cies 10.0 Cres Coes 1.0 VGE VCE 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 400 800 1200 1600 Gate charge : Qg [ nC ] MS5F6562 a 10 14 H04-004-03a Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=6.8, Tj= 25 Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=6.8, Tj=125 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff 1000 ton tr tf 100 ton 1000 toff tr 100 tf 10 10 0 200 400 600 0 800 Collector current : Ic [ A ] 600 800 Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=300V, Ic=400A, VGE=15V, Tj= 25 Vcc=300V, VGE=15V, Rg=6.8 40 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 400 Collector current : Ic [ A ] 10000 tr toff ton tf 100 10 Eoff(125) Eon(125) 30 Eoff(25) Eon(25) 20 10 Err(125) Err(25) 0 1.0 10.0 100.0 0 Gate resistance : Rg [ ] 200 400 600 800 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=400A, VGE=15V, Tj= 125 Reverse bias safe operating area (max.) +VGE=15V,-VGE15V, RG6.8 ,Tj125 60 1000 50 Eon Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 200 40 30 Eoff 20 800 600 400 200 10 Err 0 1.0 10.0 Gate resistance : Rg [ ] 0 100.0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] MS5F6562 a 11 14 H04-004-03a Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=6.8 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 1000 800 Tj=25 Tj=125 600 400 200 trr (125) Irr (125) Irr (25) trr (25) 100 10 0 0.0 1.0 2.0 3.0 Forward on voltage : VF [ V ] 0 200 400 600 800 Forward current : IF [ A ] Transient thermal resistance (max.) Thermal resistanse : Rth(j-c) [ /W ] 1.000 FWD 0.100 IGBT 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] MS5F6562 a 12 14 H04-004-03a Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. MS5F6562 a 13 14 H04-004-03a Warnings - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG Cautions - Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. MS5F6562 a 14 14 H04-004-03a