AP4435M Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Low On-resistance D D D Fast Switching BVDSS -30V RDS(ON) 20m ID -8A G SO-8 S S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Rating Units -30 V 20 V ID@TA=25 3 Continuous Drain Current -8 A ID@TA=70 Continuous Drain Current3 -6 A 1 IDM Pulsed Drain Current -50 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 50 /W 20020430 AP4435M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 -30 - - V - -0.037 - V/ VGS=-10V, ID=-8A - - 20 m VGS=-4.5V, ID=-5A - - 35 m VDS=VGS, ID=-250uA -1 - -3 V VDS=-15V, ID=-8A - 20 - S o VDS=-30V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=-4.6A - 36 - nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=-250uA Min. Typ. Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-15V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 3.5 - nC VDS=-15V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 8 - ns td(off) Turn-off Delay Time RG=6,VGS=-10V - 75 - ns tf Fall Time RD=15 - 40 - ns Ciss Input Capacitance VGS=0V - 1530 - pF Coss Output Capacitance VDS=-15V - 900 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) 2 Forward On Voltage Test Conditions Min. Typ. Max. Units VD=VG=0V , VS=-1.2V - Tj=25, IS=-2.1A, VGS=0V - -2.08 A -0.75 -1.2 V - Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. AP4435M 50 50 -10V -8.0V -6.0V -10V -8.0V -6.0V 40 30 V GS =-4.0V 20 -ID , Drain Current (A) -ID , Drain Current (A) 40 30 V GS =-4.0V 20 10 10 T C =150 o C T C =25 o C 0 0 0 2 4 6 8 10 0 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4 6 8 10 Fig 2. Typical Output Characteristics 1.6 40 I D =-8A T C =25 I D =-8A V GS =-10V 1.4 Normalized RDS(ON) 35 RDS(ON) (m ) 2 -V DS , Drain-to-Source Voltage (V) 30 25 1.2 1.0 0.8 20 0.6 15 3 4 5 6 7 8 9 10 -V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 11 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP4435M 3 10 2.5 8 -ID , Drain Current (A) 2 PD (W) 6 1.5 4 1 2 0.5 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 o o T c , Case Temperature ( C) T c , Case Temperature ( C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 100 Duty Factor = 0.5 100us 0.2 Normalized Thermal Response (R thja) 10 -ID (A) 1ms 10ms 1 100ms 1s 0.1 0.1 0.1 0.05 0.02 0.01 PDM t Single Pulse 0.01 T Duty Factor = t/T Peak Tj = P DM x Rthja + Ta 10s DC T C =25 o C Single Pulse Rthja=125 oC/W 0.01 0.001 0.1 1 10 -V DS (V) Fig 7. Maximum Safe Operating Area 100 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP4435M f=1.0MHz 14 10000 I D =-4.6A V DS =-15V 10 Ciss 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 1000 Coss 4 Crss 2 0 100 0 5 10 15 20 25 30 35 40 45 50 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 3 100.00 10.00 T j =150 o C T j =25 o C -VGS(th) (V) -IS(A) 2 1.00 1 0.10 0.01 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 o T j , Junction Temperature ( C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP4435M VDS 90% RD VDS D TO THE OSCILLOSCOPE 0.5 x RATED RG G 10% VGS S VGS -10 V td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS QG TO THE OSCILLOSCOPE D -10V 0.5 x RATED VDS QGS G S QGD VGS -1~-3mA I I G D Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q