Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.037 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-8A - - 20 mΩ
VGS=-4.5V, ID=-5A - - 35 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-15V, ID=-8A - 20 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge2ID=-4.6A - 36 - nC
Qgs Gate-Source Charge VDS=-15V - 5.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-10V - 3.5 - nC
td(on) Turn-on Delay Time2VDS=-15V - 12 - ns
trRise Time ID=-1A - 8 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 75 - ns
tfFall Time RD=15Ω-40-ns
Ciss Input Capacitance VGS=0V - 1530 - pF
Coss Output Capacitance VDS=-15V - 900 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -2.08 A
VSD Forward On Voltage2Tj=25℃, IS=-2.1A, VGS=0V - -0.75 -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
AP4435M
± 20V ±100