SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,LINE No. 59 TYPE No. 280464 $15657 FT45 u 2SC386 BF209 NKT35219 TIXS30 121T2 D16K4 2N4081 2S8C385 BF213 NS6214 TIXS28 D16K3 $E3100 $5328E 2N2808 2$C387G A489 40295 2N2808A TIXSO9 TIX3016 BFS58 BFR34 AT17 AT25A AT101A AT201 A757 BC23 BCc1 BC2 BSS19 PET8005 DISS. @25C 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 200m 220m 220m 220m 220m 228m m 225m fab 400M5 400MSA 425M5A 500M5 500M5 5OOMSA 5OOMSA 560M5 580M BOOMSA 600M5 600MS 600MEA 630M5A 650M5 800M5 900M5 1.0G* 1.068 1.065 3.3G5 3.5G8 3.5G5 4.065 4.065 130M 250M |2.2m 300M |2.2m 300M8 |2.2m 50M8A| 1.8m 200Ms |2.3m D.A.T.A. 8.0m 2.0mZ 1.0mZ 4.0m% IN ORDER OF (1) MAX COLLECTOR DISSIPATION Cob ISTRUC|Y200 jE O TURE | s/a jAD TO200/D E op 850t R103a T0106 a To72 | G 80 . R67a 15 : TO72 20 : TO72 30 X20 5.0m }110 TO098 5.0md | 110 1. To98 |B 2.0mh 8.0m 4) SP 40 300fs | TO104/J 80 : PE [R672 | B 30 . TO72 | G 20 X16 30 , X20 60 : TO98 80 TO106|c a R338 R38 30 2.0m% | 30 SYMBOLS AND CODES EXPLAINED IN INTERPRETER 59