SIEMENS FEATURES Current Transfer Ratio at lp=10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min. * High Collector-Emitter Voltage ILDIQ1 - Bceg750 Vv ILD/Q2, ILD/Q5 BV-g5=70 V * Fleid-Etfect Stable by TRaneparent lOn Shleld (TRIOS) (solation Test Voltage, 5300 VACaus * Underwriters Lab File #52744 . VDE 0884 Available with Option 1 Maximum Fiatings (Each Channel) Emitter Reverse Voltage Forward Current Surge Current ........, ZEA Power Dissipation ... . 100 mW Derate Linearly fram 25 2.3 mw/t Detector Collector-Emittar Reverse Vollage ILO/O1.. ILB/Q2, ILOIO5 Cotiector Current .. wee Colector Current (tet ms). Power Dissipation ... Derate Linearly from 25C Package Isolation Test Voltage (between amitter and detector referred to standard climate 23C/50%RH, DIN 50014) Creapaga Clearance .... Isolation Resistance Vip=500 V, Ty=26C .. Rig= 10? 2 Vig=500 V, Ty=100C . Rip= 0"! Package Power Dissipation... 2650 mw 2 6 mwiec . 5300 VACRus J min. 7 mm min. 7 mn Derate Linearly from 25C oe 3.3 mW/?C Storage Temperature 40C to +150C Operating Temperature . . 40C to +100C Junction Temperature 0.0. NOOR Soldering Temperature (2 mm from case bottom) 0. SBOP DUAL CHANNEL ILD1/2/5 QUAD CHANNEL ILQ1/2/5 PHOTOTRANSISTOR OPTOCOUPLER Package Cimensions in Inches (mm) 1.01/2/5 (Dual Channel) oy al meen q Anode fe Emitter eee ie at Cathode ~ [F ] Collector Cathode ae Ke Collector el gs on Te. ~ 390 (9.31) Anode [4] [5] Emitter 379 (9.63) os 445 |__305 Typ. 7 030 {.76) (7.75) Typ. Fatt mae it ee \__ I 38833} typ HS + 108 e| 940 (4 02 "| 9 022 ( 56 = ciel s) 100 (2.84) Typ 813 1LO1/2/5 (Quad Channel) Pin One LD Anode ie Emitter T Se 1 fe 1 oe ee / Cathode need Collector q Cathode (2 a Collector oes (eam) Anode | Emitter | Anode Gr Ee Emiter ~~ clieoliocl toc) oS Cathode [5] 17] Colkactor 790 (20.07) Cathode [7] {1g} Collector 779 (19.77 J Anode oe KB Emitter a 045 (1.14) 150 (2 61 305 Typ. [7-090 (76 1, 3.30) (7.75) Typ. 135 (3.43 Typ 115 (2 92) a] B22 rt 018 (46, .100 (2.54) Typ DESCRIPTION The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor, Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output, The 1LD/Q1/2/5 ara especially designed for driving medium- speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface appiications such as CRT modulation. The ILD 1/2/5 has two isolated channeis in a single DIP package and the ILQ1/2/5 has four isolated channels per package. See Appnote 45, "How to Use Optacoupiler Normalized Curves." 5-154Characteristics Emitter Forward Voltage Reverse Current Capacitance Thermal Resistance Junction to Lead Detector Capacitance Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage DC Forward Current Gain Saturated DC Forward Current Gain Thermal Rsistance Junction to Lead Package Transfer Characteristica (Each Channel) Symbol Min. iLD/Q1 Saturated Current Transfer Ratio (Collector-Emitter} Current Transfer Ratio (Collactor-Ernitter) ILD/Q2 Saturated Current Transfer Ratio (Collector-Emitter} Currant Transter Ratio (Collactor-Emitter) ILD/Q5 Saturated Current Transfer Ratio (Collector- Emitter) Current Transler Ratio (Collector-Emittar} Isotation and Insulation Common Mode Rejection Output High Common Mode Rejection Output Low Common Mede Coupling Capacitance Package Capacitance Symbol Min. Ve la Co ATH Coe loEo VoesAT HFE 200 HFEs,r 120 Rte CTRcesar CTAce 20 CTAcesat CTRce 100 CTRcesar CTAce 50 CMH CML Com Cio Typ. 1.25 0.01 25 750 6.8 0.25 650 400 500 Typ. 75 170 200 100 130 5000 5000 0.01 0.8 Max. Unit 165 V 10 WA pF CHW pF 50 nA 0.4 1800 600 CIW Max, Unit % 300% % 600 % % 400 % Vis Vips pF pF Condition I-=60 mA Vax6V Va=0 V, fe1 MHz Veg=6 V. fat MHz Vog=10 V Igg=71 MA, Ig=20 WA Voe= 10V, Ip=20 pA Vog= 0.4 V, lg=20 pA Condition I-=10 MA, Vop= 0.4 V ip=10 MA, Vog= 10 Ips 10 MA, Vpp=O.4 V p= 10 MA, Voe= 10 p= 10 MA, Vog=0.4 V lps 10 MA, Vog= 10 Vom=50 Vep. RL=1 KR, e=O mA Vow=50 Vee R= kf, =10 mA Vig=0 V, f=t MHz Optocouplers (Optoisolators) oa 5-185 ILDIQ 12/5Typical Switching Times Figure 1. Non-saturated switching timing Veos5 V IF=10 mA Cm Vo F=10 KHz, DF=50% RL=75 Q Figure 3. Non-saturated switching timing Figure 2. Saturated switching timing F=10 KHz, = DF=50% Vec=5 R. [.=10 mA Vv Ze o Figure 4. Saturated switching timing lp + Fe Z ' et tp PAL ti > teu Vo R _ Vo t | 'PLH pe bg 50% | + IVyy4=1.5/V t 9 ta te Leap tPHL be tg-+te tp +] ILofal LD/a2 | I HOO? =| ILOVGa2 | ILD/OS Characteristic 20 mA | ip=SmA ]ie=10 mA) Jatt | Condition Charecterlatic e220 mA [ip mA | Ip=10mA [Unk | Condition Dalay, tp OB 1.7 V7 ys Delay, tp 0.8 1 17 ps Rise Time . tg 19 2.6 26 | ps |Voc=S Rise Time, fy 12 2 7 us | VcemO.d Storage. ts a2 04 04 pe Ri =75.0 Storage, 74 6.4 46 ys Ratko Fall Time, t +4 22 22 ys | 50% of Vpp Fail Time, & 746 13.6 20 ps Voo=5 V Propagation H-L, teu. a7 12 1.1 ps Propagation H-L, tory 16 54 2.6 we | Viyel SV Propagation L-H, tippy 1.4 23 25 HS Propagation L-H, pry 86 74 7.2 ps ILD/O 12/5 5-156NCTR - Normalized CTR iceo - Collector-Emitter - nA VF - Forward Voltage - V Figure 5. Forward voltage versus forward current 1.4 13 12 11 1.0 09 08 O7 a= -55C Ta = 25C A 1 10 IF - Forward Current -mA 100 Figure 7. Normalized non-saturated and saturated CTR at T, = 50C versus LED current 15 | Normalized ta: E F Vce = 10V, |F = 10mA, Tal= 25C [ CTRece(sat) ce = 0.4 1.0 i | Ta=50C ~~ E ZL 2 05 A Pa a NCTAISAT) a + NCTR 0.0 a A 1 10 100 IF - LED Current - mA Figure 9. Normalized non-saturated and saturated CTA at T, = 65C versue LEO current Figure 6. Normalized non-saturated and ssturated CTR at T, = 25C versus LED current 15 - F Normalized: [ Voce = 10VHF = 10mA Ta = 26C | GTRee(sat[(Vee = O4 i NCTRISAT) NCTR oe oO o- +-_ NCTR - Normalized CTR S in oS o ae 1 10 100 IF - LED Current - mA Figure 8, Normalized non-saturated and saturated CTR at T, = 70C varaus LED current 16 Normatizedita: Vee = 10V\IF = 10mA o | Ta=26C Yr Wor CTRceisat)|Vce = 0.4 / = 45 ZA " Le Va Ta=poo a ite F A a. [NCTRISAT) al : = 00 ~+ INCTA 6s t 1 10 100 IF - LED Current - mA Figure 10. Cotlector-emitter current veraus temperature and LED current 15 35 Normalized ta: 30 Vee = 10V,1F = 10mA, Ta = 26C ; 10 CTRee(sat}/Vce = 0.4V a = 25 , YA B 20 5 A * 15 O5 pT g 1 Tad 85C SN, 9 5 = NCPRISAT) 8 NCTR 3 00) ws 10 400 09 10 20 30 40 50 60 IF - LED Current - mA IF-LED Current -mA Figure 11. Collector-emitter leakage current Figure 12. Propagation delay versus collector versus temperature load resistor 5 1000 FTa= 25C, IF=tomA 25 10 5 r Vec=5V, Vthe 15 V = 103 . tpHL . 100 & * 20 j 10? z XO Le 10! 1 > aa 19% 10 > 15 tpLH 1 1071 =a 107 Z 1 rn 1.0 5 -20 Go 20 40 60 80 Too 1 1 10 106 Ta- Ambient Temperature -C AL - Collector Load Resistor - Ki ILD/Q 12/5 5-157