2SK2765-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 800 7 28 35 7 267 125 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=10.0mH, Vcc=80V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=35V VDS=0V ID=3.5A VGS=10V 800 3.5 Tch=25C Tch=125C ID=3.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=7A VGS=10V 2.0 RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. Max. 4.0 4.5 10 500 0.2 1.0 10 100 1.62 2.0 4.0 900 1350 130 200 70 110 25 40 90 140 80 120 50 80 7 1.0 900 10.0 1.5 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. Units 1.0 35.0 C/W C/W 1 2SK2765-01 FUJI POWER MOSFET Characteristics 150 Power Dissipation PD=f(Tc) Safe operating area ID=f(VDS):D=0.01,Tc=25C 10 2 125 t=0.01 s 10 1 s 1 10s DC ID [A] PD [W] 100 75 100s 50 10 0 1ms t D= 25 t T 10ms T 100ms 0 0 50 100 10 150 -1 10 0 10 1 10 o 2 10 3 VDS [V] Tc [ C] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 20 VGS=20V 10V 10 10 nd e mm 7V 5 ot 0 0 10 N 20 o c e r n sig -1 10 -2 6.5V 6V 5.5V 5V 30 0 10 . de 1 ew n for ID [A] ID [A] 10 8V 15 40 0 1 2 3 4 5 6 7 8 9 10 VGS [V] VDS [V] Typical forward transconductance Avalanche energy derating gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C Eas=f(starting Tch):Vcc=80V,IAV=7A 300 250 10 1 gfs [s] Eas [mJ] 200 10 150 0 100 50 10 0 -1 10 -1 10 0 10 1 0 50 100 150 o Starting Tch [ C] ID [A] http://store.iiic.cc/ 2 2SK2765-01 FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=3.5A,VGS=10V 6 6.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 5.0 max. 4.0 VGS(th) [V] RDS(on) [ ] 4 max. typ. 2 typ. min. 3.0 2.0 1.0 0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=7A,Tch=25C 10n 40 800 700 0V 16 c= V Vc 400 V 0 64 Vcc=640V 600 Typical capacitances C=f(VDS):VGS=0V,f=1MHz 30 1n VDS [V] 20 e m m 15 300 10 200 160V 100 0 0 20 40 60 ot N 80 100 o c e r 120 140 Ciss nd Coss 100p Crss 5 0 160 10p 10 -2 Qg [nC] IF=f(VSD):80s Pulse test,VGS=0V n sig ew n for VGS [V] 400V 400 C [F] 25 500 . de 35 10 -1 10 0 10 1 10 2 VDS [V] Forward characteristic of reverse of diode 10 1 o IF [A] Tch=25 C typ. 10 10 10 0 -1 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD [V] http://store.iiic.cc/ 3 Zthch-c [K/W] 2SK2765-01 10 1 10 0 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T D=0.5 0.2 0.1 -1 10 0.05 t D= 0 0.02 0.01 t T T -2 10 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4