Sheet No 1/5 SRA PRODUCT SPECIFICATION DESIGNED BY | CHECKED BY | CHECKED BY | APPROVED BY afi TYPE NUMBER: PN 1208S f 4 O-n' hh / GLOBAL NUMBER: PNZ120S00 ue f. ophioll / Hel 1 A.Nakano Ya / FES Type Pah hk OY SAS -Photo Transistor . FAs Appl ication SiS RRS AA For Optical Fiber Communication Systems #8 Structure LPYAYAL+B-Si Planar she Out Sine it B)_ Attached HMaRAEH P, I, Veso Veco Topr Tstg Absolute Maximum 50 20 30 5 -25~+85 -30-~ +100 Ratings mi mA V V c Bah: CSHB Electrical-Optical Characteristics (Ta=25 C3 C) mem Fl, . vas ete eS Limit Ki IAA Item Symbo | IM se 4 Measuring Condition Typ. Min. |. Max. Unit leenot Veg=t 0 Vv, L=2 1x GE 1) (Notel) GE 2) (Note2) Mh A 4B /Photo Current Vee=i0 V, L=500 Ix : beeqre GE 1) (Notel) GE2) (Note) = |mA ~} Ae Bark Ourrent TA geg "| Veg=T0 5 500 nA 3L7 4A BE/Coi lector y leegy=1 mA, L=1 000 Ix 0.2 0.5 y Saturation Voltage CE (sat) GE 1) (Note1) . . P-7RE RR _ Peak Emission Wavelength Ar Vee=10 800 nm . HERA SNR SREYH (8 fi/Beam Angle at 50 % : Axia! Intensity The Angle When Light Current 50 is Halved : , ' : tr Vog210 V, lee p25 mA, R=100 Q 3 Me Sy fl /Switching Time tf GE 4) (Note4) 3 Hs GE 1) Note HUM: RYUAPAFUVILT (BRE T=2856 Kk) /Source : Tungsten 2856 K GE 2) (Note?) lea) 1, leq27 7 Re/ | ge Md leeaye Rank Classification _a nas ya bas *1 Code =979/Rank j toea1 (HA) Sceqy2 (mA) Ieeay2 (mA) Type Number Global Number aL 3~ 16 5 typ. - PN120S-QL PNZ120SO0CL RL 10 ~ 30 6 typ. - PN120S-RL PNZ120SORL SL 24 ~ 8 typ. - PN120S-SL PNZ120S0SL a _ -_ 1.0~5.0 PN120S-G PNZ120S00 R - - 4, Qo~8: 0 -PHEZOS-RK ~ -PN7126S0R s - - T.0~ PNi20S~ PNZ120S0S GE 5) Notes) AM MISMRARESRLERH TILHYVECA, (HE 3) (Noted) 5 ey Ml FU se Re, RR SE / Switching Time Measuring Circuit and Frequency Characteristics tr: EFF /Rise Time Sig. iN Veo : PN120S AAW ba/ | _> Input Pulse manet Sig, OUT 50 4 Ha ba/ 10% 50 2 Rk Output Puise , tf fa o Spectral Response Characteristics: tf: FRB /Fall Time CE 4) (Noted) PCRS : 400 nm ERA SRRICKISBEORBAREIOMT SUBS 100 ACF. Sensitivity for wave length over 400 nm to maximum sensitivity ratio is 100 4%. r This device is designed be disregarded radiation. Bt S hm 200i. 8. 11 Semiconductor Company, Matsushita Electric Ind ustrial Co.,Ltd.Sheet No 2/5 BAA PRODUCT SPECIFICATION oh OUT LINE mii -/TYPE NUMBER: PN120S y O-n bY GLOBAL NUMBER: PNZ120S00 *] Mi /Unit:mm TB /\tem AB/Contents Y Es R/ Fe %/The Fe System Lead Material | #52994-74+2/Suppl ied + with Seramic Base y -oe/ RHoe/ Lead Process Au E-)L FHB/ Dik > He / Mold Material Epoxy Resin [ > Oo +} - a <I S 4 o wy i te < s rT = os ) go.zoto.05 } | |! | @O . AS+0.05 ra heel Ln MN | oO 2 1 o o I a 1 xO.9t0.15 | | 1: Collector 2: Emitter GE INKY ~ FRTRESTS, / (Notel) XI ndicates root dimensions of tead. BO nnd O2-0-2 9901. 6 11 Semiconductor Company, Matsushita Electric Industrial Co.,Ltd.Sheet No3/5 BSG PRODUCT SPECIFICATION PRiR LE ie RIA CAUTION FOR HANDLING mai8% TYPE NUMBER: PN 1208S + Oe ben HGLOBAL NUMBER: PNZ120S00 *1 Ut&A Fttit] [Soldering] OF 4vFKAEATEBSDip Soldering position. A: 1.6 mUEOERSHET EL, s A: Keep away Min. 1.6 mm from the package. @QF4v FATTER. MLDip Soldering Temp/Time tA Soldering temp ; 260 CLLF/Less than 260 C 1 Ze f > BF falSoldering time :5 #UA/Less than s Yy STs, oF y y Z ess -@ Soldering Repeat: 1 GlLess than 1 time ItA tf /Solder ORLA Att B/ lron Soldering position. A__ A: 1.6 mULOBREMRE SL, | A : Keep away Min. 1.6 mm from the package. i @QFtA HITE. FR lron Soldering Temp/Time 7 ISAT IRR-Soldering temp ; 270 CIF /Less than 270 C A 7 | * fulSoldering time ;3 #ELALess than 3 s itAt22=/lron Solder - Soldering Repeat; 1 ]Less than t time KY VO-tARARRUtHIACRT SARIN -KAE LSD) COMAKE HHI, BUCKS, Avoid soldering in the reflow solder method and the method (includeing flow solder, too) which does a kind ta it. QO ray7ARS-Flux an ingredient BRARDESALCUMEOCHRLETA, CRA ORISRRALERARY COC ERD HBF Sl, Please dont be used flux in chlorine an ingredient. They should be Applied after testing the assembled product in real use. [UY FRR - Set] ~ [Lead bent/cut] -RBORBRCOVU-FRE - OMETORST CMRERORMBLERYETOCYFKRE - MISS Gi, MATMRORRHALLAAMPSALABISF OTK SLY, RILICAENOCEEIZC, BE MERC TITHE FOCCAEFSL, - The iead should be bent/cut at a normal temperature and not be exposed to excessive mechanical stress(If the lead is bend/cut at a high temperature. it may cause on open circuit or other problems.) Please be especially careful after sojdering. [HEA] [Cleaning] - KPBANIOUTIL, FILI-VKAEBRRRLEF, i. HRARBAIL. U- FERBLEY. RFOSLORBLGVETOCEALAUTHSH8, - Alcohol are recommended for cleaning. Or a chlorine solvent which may cause damage to the epoxy and chip die. HERA. BFORBRUHRLEY RRIF SL, Please dont be cleaned by ultrasonic cleaning. [EMH] ~ [Other] -FSvVvIlk, LDYARDERITORSASBVYETOCHHSESICLTF EL, > Brushing is not recommended because the lens face may be scratched out. PRE. F-N-LVa-h. PV -Psa- +BEFORRREAMHEAUNEICHREPEL, Don't add an abnormal voltage. (Reverse voltage, over shoot voltage, under shoot voltage, etc.) SRBILMENCHVETARIC. PARR: BHRTRS (SRS. BES. HARE. RA NAGEL) (ICBARENHTUSCESFRRLCSVED. RAGAR, FREMEBRSEN, TOMMY HOBBARERA LEY. ARILEBERETBHOHRSAB: HEAR ME. FR. Re. PRBS, KREEBEL) (ICRA BSAOSERAU, BHR LERRARUACTCERMESS AQOBBERIS. SHICBHEREOICHAMLYET. - This device ts designed for normal uses: General electronic equipments (Office equipment, Communication equipment, Instrumentation equipment, Home electrification product etc). lf this device is required specific reliability.and is used for specific uses (Flying-Space relation. Traffic equipment s. Combustion equipment s. Safety equipments etc) where fault of device is in danger of human life.user should ask to Matsushita Electronics Corporation. DO | 2001, 6. 11 Semiconductor Company, Matsushita Electric Industrial Co. (td.Sheet Na. 4/5 FAAS PRODUCT SPECIFICATION {ERATE REESE RELIABILITY GUARANTEE CRITERION AREAS Se EE _FAILURE CRITERION adi TYPE NUMBER: PN 1720S Y O- be B/GLOBAL NUMBER: PNZ120S0Q * {ERATE TRAE AES. (MEL-STD-19500H LTPD:15 Hed, Reliability Guarantee Criterion (MIL-STD-19500H LTPD 15 %) Terminal Bend Test iF 8 / Item & Test Conditions fe /Result Bia 472 (BT) sES-High Temperature Bias Operating Life Test Fars C, Veo=24 V, t=1 000 h o/15 BRB 472 (THB) AER Temperature | 0. oy, _ _ Humidity Bias Operating Life Test | '2-60 G-RH-90 4, Vic=24 V, t=500 h o/15 Bine eR -Hieh Temperature _en e _ _ Humidity Storage Life Test Ta=60 C, RH=90 4, t=1 000 h o/16 eRe Ra Hen Temperature Ta=100 C, t=1 000 h 0/15 sie Test vmmerature Ta=-30 C, t=1 000 h 0/18 Ta = 100 C ~ -30 C , 10 Cycle SA EGER -Thermal Shock Test (6 min) (5 min) 0/15 mEt+? URRY Ta = 100 C ~ 25 C ~ -30 C , 20 Cycle 0/15 Temperature Cycle Test (30 min) (5 min} (30 min} - : BERG BE:270 C, 10 IZA Te ulmi = 41) a e ee Resistance Test JF MASSE k Y 2.0 mm sk, 759924 L 0/15 Solder :270 C, t=10 s, Min:2. 0 mm from the package . Al $2 BB: Ta=85 C, RH=85 %,t=16 h f <=ftl ' Selderebil te tect PRIS: 230 C, 5 Hh, 75992 Y) 0/15 Solder :230 C, t=5 s with flux MetEinkVRSI mUktLOPMReLeaAstT I iF BER Drop Test Distance of dropping : 1m 0/15 Drop the device on the maple board 3 times FBS Y RR Abt 3 N, 30 Hh 0/15 Terminal Strength Test Weight due to the terminal:3 N, t=30 s . Rijs 1N,90 Bird. 2 o i J PERT aR IF ER ER Weight due to the terminal:1 N, Bend the 0/15 terminal at right 90 angle to back, 2 times ae A SE EAE Failure Criterion 4) SE 28 4A GE) /Cr iter ion (Note) a i /Item fe 3 FG Symbol 1 ~F mB /Lower Limit | /fB/Upper Limit | Unit RAM Electrical Characteristic it HRI Collector Photo Current Sleew 50 150 % CE (32 iB @si-/Dark Current \ ceo - Ux2.0 nA Ar BE Reverse Voltage Veco Lx0.8 - WA fl SE Forward Voltage Voce Lx0.8 - V So, f-Appearance, etc a} i Appearance Sb SHES IT SH According to visual spec a RA /Rusting, Discoloring th- ERAGE OL/No rusting, discoloring itA fe tt Solderabi lity RABAT 95 ALIA TEA <BR HMin. 95 % (HE) (Note) UAH ERG Upper initial standard L: AK FR -Lower initial standard o792 | 2901611 Semiconductor Company, Matsushita Electric Industrial Co.,Ltd.Sheet No5/5 BY BRI PRODUCT SPECIFICATION BLASER PACKING SPECIFICATION oefi% TYPE NUMBER: PN120S 7 0-. }G3e- GLOBAL NUMBER: PNZ120S00 *] 1. AY SeeaR- Polyethylene bag indication Panasonic fl) PN120S-RL Le Fo-N i as/ PNZ120SORL eo |] Global Type Number 500 pes Matsushita Electric Industrial Co., Ltd. Mada in Japan BL /Uni tom 2.Hb2> Carton SOM TEE Label Sticks position (200) f ~*~ x ($5) Labe| <0) BR Ayvey T+ -A/Packing Case SAAT ie Label Sticks position YS, (485) (131) . le ol os , r (215) 4 4.88 - AS Quantity & Contents He AB/Form HB /Quantity AS/Contents $'@ /Mater ial K 8 /Polyethy!ene bag 500 pes bk ==A/Viny! h-by4-2/Carton Case 4 000 pcos 8 $/8 Polyethylene bag Mak /Cardboard nv 9499" 7-2/Packing case 40 000 pcs 10 A-bY/10 Carton case Bek -4/Corrugated paper GE 1) BARC, MEPRUMRYL, V-KFMRMSZIEMBASCHETOCCTRERSEL, (Notel)For this product, are transported to and please admit as there is the case that a lead bends with respect to a handling RAE LCA OMY ORS ERAT S Sealed a product name all in principle. QL 59/0L Rank PNIZOS-OQL ([CPNZi20S00QL) 0@329/0 Rank -> PN120S-@ (PNZ120S00) RL5Y9/RL Rank PNI2Z0S-RL (CPNZ120SORL] R39/R Rank PNIZ0S-R (PNZi20S0R) SL 5+4/SL Rank * PNI20S-SL (CPNZ120SOSL} $339/S Rank PN120S~S [PNZ120S0S) BBSEOBREHO-Number means the following : 14 (2001 4 A/April) o7p2 | 2001, 6.11 Semiconductor Company, Matsushita Electric Industrial Co.,Ltd.