DATASHEET HFA3046, HFA3096, HFA3127, HFA3128 FN3076 Rev.16.00 Jan 24, 2019 Ultra High Frequency Transistor Arrays The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers. Features * NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz * NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 * NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V * PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz * PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60 * PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V * Noise figure (50) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB * Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA * Complete isolation between transistors * Pin compatible with industry standard 3XXX series arrays * Pb-free (RoHS compliant) Applications Related Literature * VHF/UHF amplifiers For a full list of related documents, visit our website: * VHF/UHF mixers * HFA3046, HFA3096, HFA3127, HFA3128 device pages * IF converters * Synchronous detectors FN3076 Rev.16.00 Jan 24, 2019 Page 1 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Ordering Information PART NUMBER (Notes 2, 3) PART MARKING TEMP. RANGE (C) TAPE AND REEL (UNITS) (Note 1) PACKAGE (RoHS Compliant) PKG. DWG. # HFA3046BZ HFA3046BZ -55 to +125 - 14 Ld SOIC M14.15 HFA3096BZ HFA3096BZ -55 to +125 - 16 Ld SOIC M16.15 HFA3096BZ96 HFA3096BZ -55 to +125 2.5k 16 Ld SOIC M16.15 HFA3127BZ HFA3127BZ -55 to +125 - 16 Ld SOIC M16.15 HFA3127BZ96 HFA3127BZ -55 to +125 2.5k 16 Ld SOIC M16.15 HFA3127RZ 127Z -55 to +125 - 16 Ld 3x3 QFN L16.3x3 HFA3127RZ96 127Z -55 to +125 6k 16 Ld 3x3 QFN L16.3x3 HFA3128BZ (No longer available or supported) HFA3128BZ -55 to +125 - 16 Ld SOIC M16.15 HFA3128RZ (No longer available or supported) 128Z -55 to +125 - 16 Ld 3x3 QFN L16.3x3 NOTE: 1. See TB347 for details about reel specifications. 2. These Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), see the HFA3046, HFA3096, HFA3127, or HFA3128 device page. For more information about MSL, see TB363. FN3076 Rev.16.00 Jan 24, 2019 Page 2 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Pinouts 1 2 14 Q1 13 Q5 3 4 Q2 12 11 5 Q4 10 6 9 7 8 Q3 1 2 Q1 Q5 3 4 5 Q2 Q4 6 7 8 Q3 HFA3128 (16 LD SOIC) TOP VIEW HFA3127 (16 LD SOIC) TOP VIEW HFA3096 (16 LD SOIC) TOP VIEW HFA3046 (14 LD SOIC) TOP VIEW 16 NC 1 15 2 14 3 Q1 Q2 Q5 16 1 15 2 14 3 Q1 Q2 Q5 16 15 14 13 4 13 4 12 NC 5 12 NC 5 12 11 6 11 6 11 10 7 10 7 9 8 9 8 Q3 Q4 Q3 Q4 13 10 9 Q2C Q1C Q1E Q1B HFA3127, HFA3128 (16 LD 3X3 QFN) TOP VIEW 16 15 14 13 Q2E 1 12 Q5B Q2B 2 11 Q5E NC 3 10 Q5C Q3C 4 FN3076 Rev.16.00 Jan 24, 2019 5 6 7 8 Q3E Q3B Q4B Q4E 9 Q4C Page 3 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Absolute Maximum Ratings Thermal Information Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V Collector Current (100% Duty Cycle) . . . . . 18.5mA at TJ = +150C 34mA at TJ = +125C 37mA at TJ = +110C Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA Thermal Resistance (Typical) Operating Information JA (C/W) JC (C/W) 120 N/A 14 Ld SOIC Package (Note 4) . . . . . . . 16 Ld SOIC Package (Note 4) . . . . . . . 115 N/A QFN Package (Notes 5, 6). . . . . . . . . . 57 10 Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . +175C Maximum Junction Temperature (Plastic Package) . . . . . . +150C Maximum Storage Temperature Range . . . . . . . . . -65C to +150C Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493 Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" can cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 4. JA is measured with the component mounted on an evaluation PC board in free air. 5. For JC, the "case temp" location is the center of the exposed metal pad on the package underside. 6. JA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See TB379 for details. Electrical Specifications TA = +25C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNIT DC NPN CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO IC = 100A, IE = 0 12 18 - 12 18 - V Collector to Emitter Breakdown Voltage, V(BR)CEO IC = 100A, IB = 0 8 12 - 8 12 - V Collector to Emitter Breakdown Voltage, V(BR)CES IC = 100A, Base Shorted to Emitter 10 20 - 10 20 - V Emitter to Base Breakdown Voltage, V(BR)EBO IE = 10A, IC = 0 5.5 6 - 5.5 6 - V Collector-Cutoff-Current, ICEO VCE = 6V, IB = 0 - 2 100 - 2 100 nA Collector-Cutoff-Current, ICBO VCB = 8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector to Emitter Saturation Voltage, VCE(SAT) IC = 10mA, IB = 1mA - 0.3 0.5 - 0.3 0.5 V Base to Emitter Voltage, VBE IC = 10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = 10mA, VCE = 2V 40 130 - 40 130 - Early Voltage, VA IC = 1mA, VCE = 3.5V 20 50 - 20 50 - V Base to Emitter Voltage Drift IC = 10mA - -1.5 - - -1.5 - mV/C - 1 - - 1 - pA Collector to Collector Leakage DYNAMIC NPN CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50 - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = 1mA, VCE = 5V - 5.5 - - 5.5 - GHz IC = 10mA, VCE = 5V - 8 - - 8 - GHz Power Gain-Bandwidth Product, fMAX IC = 10mA, VCE = 5V - 6 - - 2.5 - GHz Base to Emitter Capacitance VBE = -3V - 200 - - 500 - fF Collector to Base Capacitance VCB = 3V - 200 - - 500 - fF FN3076 Rev.16.00 Jan 24, 2019 Page 4 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications TA = +25C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DC PNP CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO IC = -100A, IE = 0 10 15 - 10 15 - V Collector to Emitter Breakdown Voltage, V(BR)CEO IC = -100A, IB = 0 8 15 - 8 15 - V Collector to Emitter Breakdown Voltage, V(BR)CES IC = -100A, Base Shorted to Emitter 10 15 - 10 15 - V Emitter to Base Breakdown Voltage, V(BR)EBO IE = -10A, IC = 0 4.5 5 - 4.5 5 - V Collector Cutoff Current, ICEO VCE = -6V, IB = 0 - 2 100 - 2 100 nA Collector Cutoff Current, ICBO VCB = -8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector to Emitter Saturation Voltage, VCE(SAT) IC = -10mA, IB = -1mA - 0.3 0.5 - 0.3 0.5 V Base to Emitter Voltage, VBE IC = -10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = -10mA, VCE = -2V 20 60 - 20 60 - Early Voltage, VA IC = -1mA, VCE = -3.5V 10 20 - 10 20 - V Base to Emitter Voltage Drift IC = -10mA - -1.5 - - -1.5 - mV/C - 1 - - 1 - pA Collector to Collector Leakage DYNAMIC PNP CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = -5V, IC = -5mA, ZS = 50 - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = -1mA, VCE = -5V - 2 - - 2 - GHz IC = -10mA, VCE = -5V - 5.5 - - 5.5 - GHz Power Gain-Bandwidth Product IC = -10mA, VCE = -5V - 3 - - 2 - GHz Base to Emitter Capacitance VBE = 3V - 200 - - 500 - fF Collector to Base Capacitance VCB = -3V - 300 - - 600 - fF Common Emitter S-Parameters of NPN 3mx50m Transistor FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = 5V and IC = 5mA 1.0E+08 0.83 -11.78 11.07 168.57 1.41E-02 78.88 0.97 -11.05 2.0E+08 0.79 -22.82 10.51 157.89 2.69E-02 68.63 0.93 -21.35 3.0E+08 0.73 -32.64 9.75 148.44 3.75E-02 59.58 0.86 -30.44 4.0E+08 0.67 -41.08 8.91 140.36 4.57E-02 51.90 0.79 -38.16 5.0E+08 0.61 -48.23 8.10 133.56 5.19E-02 45.50 0.73 -44.59 6.0E+08 0.55 -54.27 7.35 127.88 5.65E-02 40.21 0.67 -49.93 7.0E+08 0.50 -59.41 6.69 123.10 6.00E-02 35.82 0.62 -54.37 8.0E+08 0.46 -63.81 6.11 119.04 6.27E-02 32.15 0.57 -58.10 9.0E+08 0.42 -67.63 5.61 115.57 6.47E-02 29.07 0.53 -61.25 1.0E+09 0.39 -70.98 5.17 112.55 6.63E-02 26.45 0.50 -63.96 FN3076 Rev.16.00 Jan 24, 2019 Page 5 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of NPN 3mx50m Transistor (Continued) FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) 1.1E+09 0.36 -73.95 4.79 109.91 6.75E-02 24.19 0.47 -66.31 1.2E+09 0.34 -76.62 4.45 107.57 6.85E-02 22.24 0.45 -68.37 1.3E+09 0.32 -79.04 4.15 105.47 6.93E-02 20.53 0.43 -70.19 1.4E+09 0.30 -81.25 3.89 103.57 7.00E-02 19.02 0.41 -71.83 1.5E+09 0.28 -83.28 3.66 101.84 7.05E-02 17.69 0.40 -73.31 1.6E+09 0.27 -85.17 3.45 100.26 7.10E-02 16.49 0.39 -74.66 1.7E+09 0.25 -86.92 3.27 98.79 7.13E-02 15.41 0.38 -75.90 1.8E+09 0.24 -88.57 3.10 97.43 7.17E-02 14.43 0.37 -77.05 1.9E+09 0.23 -90.12 2.94 96.15 7.19E-02 13.54 0.36 -78.12 2.0E+09 0.22 -91.59 2.80 94.95 7.21E-02 12.73 0.35 -79.13 2.1E+09 0.21 -92.98 2.68 93.81 7.23E-02 11.98 0.35 -80.09 2.2E+09 0.20 -94.30 2.56 92.73 7.25E-02 11.29 0.34 -80.99 2.3E+09 0.20 -95.57 2.45 91.70 7.27E-02 10.64 0.34 -81.85 2.4E+09 0.19 -96.78 2.35 90.72 7.28E-02 10.05 0.33 -82.68 2.5E+09 0.18 -97.93 2.26 89.78 7.29E-02 9.49 0.33 -83.47 2.6E+09 0.18 -99.05 2.18 88.87 7.30E-02 8.96 0.33 -84.23 2.7E+09 0.17 -100.12 2.10 88.00 7.31E-02 8.47 0.33 -84.97 2.8E+09 0.17 -101.15 2.02 87.15 7.31E-02 8.01 0.33 -85.68 2.9E+09 0.16 -102.15 1.96 86.33 7.32E-02 7.57 0.33 -86.37 3.0E+09 0.16 -103.11 1.89 85.54 7.32E-02 7.16 0.33 -87.05 VCE = 5V and IC = 10mA 1.0E+08 0.72 -16.43 15.12 165.22 1.27E-02 75.41 0.95 -14.26 2.0E+08 0.67 -31.26 13.90 152.04 2.34E-02 62.89 0.88 -26.95 3.0E+08 0.60 -43.76 12.39 141.18 3.13E-02 52.58 0.79 -37.31 4.0E+08 0.53 -54.00 10.92 132.57 3.68E-02 44.50 0.70 -45.45 5.0E+08 0.47 -62.38 9.62 125.78 4.05E-02 38.23 0.63 -51.77 6.0E+08 0.42 -69.35 8.53 120.37 4.31E-02 33.34 0.57 -56.72 7.0E+08 0.37 -75.26 7.62 116.00 4.49E-02 29.47 0.51 -60.65 8.0E+08 0.34 -80.36 6.86 112.39 4.63E-02 26.37 0.47 -63.85 9.0E+08 0.31 -84.84 6.22 109.36 4.72E-02 23.84 0.44 -66.49 1.0E+09 0.29 -88.83 5.69 106.77 4.80E-02 21.75 0.41 -68.71 1.1E+09 0.27 -92.44 5.23 104.51 4.86E-02 20.00 0.39 -70.62 1.2E+09 0.25 -95.73 4.83 102.53 4.90E-02 18.52 0.37 -72.28 1.3E+09 0.24 -98.75 4.49 100.75 4.94E-02 17.25 0.35 -73.76 1.4E+09 0.22 -101.55 4.19 99.16 4.97E-02 16.15 0.34 -75.08 1.5E+09 0.21 -104.15 3.93 97.70 4.99E-02 15.19 0.33 -76.28 1.6E+09 0.20 -106.57 3.70 96.36 5.01E-02 14.34 0.32 -77.38 1.7E+09 0.20 -108.85 3.49 95.12 5.03E-02 13.60 0.31 -78.41 1.8E+09 0.19 -110.98 3.30 93.96 5.05E-02 12.94 0.31 -79.37 1.9E+09 0.18 -113.00 3.13 92.87 5.06E-02 12.34 0.30 -80.27 FN3076 Rev.16.00 Jan 24, 2019 Page 6 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of NPN 3mx50m Transistor (Continued) FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) 2.0E+09 0.18 -114.90 2.98 91.85 5.07E-02 11.81 0.30 -81.13 2.1E+09 0.17 -116.69 2.84 90.87 5.08E-02 11.33 0.30 -81.95 2.2E+09 0.17 -118.39 2.72 89.94 5.09E-02 10.89 0.29 -82.74 2.3E+09 0.16 -120.01 2.60 89.06 5.10E-02 10.50 0.29 -83.50 2.4E+09 0.16 -121.54 2.49 88.21 5.11E-02 10.13 0.29 -84.24 2.5E+09 0.16 -122.99 2.39 87.39 5.12E-02 9.80 0.29 -84.95 2.6E+09 0.15 -124.37 2.30 86.60 5.12E-02 9.49 0.29 -85.64 2.7E+09 0.15 -125.69 2.22 85.83 5.13E-02 9.21 0.29 -86.32 2.8E+09 0.15 -126.94 2.14 85.09 5.13E-02 8.95 0.29 -86.98 2.9E+09 0.15 -128.14 2.06 84.36 5.14E-02 8.71 0.29 -87.62 3.0E+09 0.14 -129.27 1.99 83.66 5.15E-02 8.49 0.29 -88.25 Common Emitter S-Parameters of PNP 3mx50m Transistor FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = -5V and IC = -5mA 1.0E+08 0.72 -16.65 10.11 166.77 1.66E-02 77.18 0.96 -10.76 2.0E+08 0.68 -32.12 9.44 154.69 3.10E-02 65.94 0.90 -20.38 3.0E+08 0.62 -45.73 8.57 144.40 4.23E-02 56.39 0.82 -28.25 4.0E+08 0.57 -57.39 7.68 135.95 5.05E-02 48.66 0.74 -34.31 5.0E+08 0.52 -67.32 6.86 129.11 5.64E-02 42.52 0.67 -38.81 6.0E+08 0.47 -75.83 6.14 123.55 6.07E-02 37.66 0.61 -42.10 7.0E+08 0.43 -83.18 5.53 118.98 6.37E-02 33.79 0.55 -44.47 8.0E+08 0.40 -89.60 5.01 115.17 6.60E-02 30.67 0.51 -46.15 9.0E+08 0.38 -95.26 4.56 111.94 6.77E-02 28.14 0.47 -47.33 1.0E+09 0.36 -100.29 4.18 109.17 6.91E-02 26.06 0.44 -48.15 1.1E+09 0.34 -104.80 3.86 106.76 7.01E-02 24.33 0.41 -48.69 1.2E+09 0.33 -108.86 3.58 104.63 7.09E-02 22.89 0.39 -49.05 1.3E+09 0.32 -112.53 3.33 102.72 7.16E-02 21.67 0.37 -49.26 1.4E+09 0.30 -115.86 3.12 101.01 7.22E-02 20.64 0.36 -49.38 1.5E+09 0.30 -118.90 2.92 99.44 7.27E-02 19.76 0.34 -49.43 1.6E+09 0.29 -121.69 2.75 98.01 7.32E-02 19.00 0.33 -49.44 1.7E+09 0.28 -124.24 2.60 96.68 7.35E-02 18.35 0.32 -49.43 1.8E+09 0.28 -126.59 2.47 95.44 7.39E-02 17.79 0.31 -49.40 1.9E+09 0.27 -128.76 2.34 94.29 7.42E-02 17.30 0.30 -49.38 2.0E+09 0.27 -130.77 2.23 93.19 7.45E-02 16.88 0.30 -49.36 2.1E+09 0.26 -132.63 2.13 92.16 7.47E-02 16.52 0.29 -49.35 2.2E+09 0.26 -134.35 2.04 91.18 7.50E-02 16.20 0.28 -49.35 2.3E+09 0.26 -135.96 1.95 90.24 7.52E-02 15.92 0.28 -49.38 2.4E+09 0.25 -137.46 1.87 89.34 7.55E-02 15.68 0.28 -49.42 FN3076 Rev.16.00 Jan 24, 2019 Page 7 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3mx50m Transistor (Continued) FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) 2.5E+09 0.25 -138.86 1.80 88.48 7.57E-02 15.48 0.27 -49.49 2.6E+09 0.25 -140.17 1.73 87.65 7.59E-02 15.30 0.27 -49.56 2.7E+09 0.25 -141.39 1.67 86.85 7.61E-02 15.15 0.26 -49.67 2.8E+09 0.25 -142.54 1.61 86.07 7.63E-02 15.01 0.26 -49.81 2.9E+09 0.24 -143.62 1.56 85.31 7.65E-02 14.90 0.26 -49.96 3.0E+09 0.24 -144.64 1.51 84.58 7.67E-02 14.81 0.26 -50.13 VCE = -5V, IC = -10mA 1.0E+08 0.58 -23.24 13.03 163.45 1.43E-02 73.38 0.93 -13.46 2.0E+08 0.53 -44.07 11.75 149.11 2.58E-02 60.43 0.85 -24.76 3.0E+08 0.48 -61.50 10.25 137.78 3.38E-02 50.16 0.74 -33.10 4.0E+08 0.43 -75.73 8.88 129.12 3.90E-02 42.49 0.65 -38.83 5.0E+08 0.40 -87.36 7.72 122.49 4.25E-02 36.81 0.58 -42.63 6.0E+08 0.37 -96.94 6.78 117.33 4.48E-02 32.59 0.51 -45.07 7.0E+08 0.35 -104.92 6.01 113.22 4.64E-02 29.39 0.47 -46.60 8.0E+08 0.33 -111.64 5.39 109.85 4.76E-02 26.94 0.43 -47.49 9.0E+08 0.32 -117.36 4.87 107.05 4.85E-02 25.04 0.40 -47.97 1.0E+09 0.31 -122.27 4.44 104.66 4.92E-02 23.55 0.37 -48.18 1.1E+09 0.30 -126.51 4.07 102.59 4.97E-02 22.37 0.35 -48.20 1.2E+09 0.30 -130.21 3.76 100.76 5.02E-02 21.44 0.33 -48.11 1.3E+09 0.29 -133.46 3.49 99.14 5.06E-02 20.70 0.32 -47.95 1.4E+09 0.29 -136.33 3.25 97.67 5.09E-02 20.11 0.31 -47.77 1.5E+09 0.28 -138.89 3.05 96.33 5.12E-02 19.65 0.30 -47.58 1.6E+09 0.28 -141.17 2.87 95.10 5.15E-02 19.29 0.29 -47.39 1.7E+09 0.28 -143.21 2.70 93.96 5.18E-02 19.01 0.28 -47.23 1.8E+09 0.28 -145.06 2.56 92.90 5.21E-02 18.80 0.27 -47.09 1.9E+09 0.27 -146.73 2.43 91.90 5.23E-02 18.65 0.27 -46.98 2.0E+09 0.27 -148.26 2.31 90.95 5.26E-02 18.55 0.26 -46.91 2.1E+09 0.27 -149.65 2.20 90.05 5.28E-02 18.49 0.26 -46.87 2.2E+09 0.27 -150.92 2.10 89.20 5.30E-02 18.46 0.25 -46.87 2.3E+09 0.27 -152.10 2.01 88.37 5.33E-02 18.47 0.25 -46.90 2.4E+09 0.27 -153.18 1.93 87.59 5.35E-02 18.50 0.25 -46.97 2.5E+09 0.27 -154.17 1.86 86.82 5.38E-02 18.55 0.24 -47.07 2.6E+09 0.26 -155.10 1.79 86.09 5.40E-02 18.62 0.24 -47.18 2.7E+09 0.26 -155.96 1.72 85.38 5.42E-02 18.71 0.24 -47.34 2.8E+09 0.26 -156.76 1.66 84.68 5.45E-02 18.80 0.24 -47.55 2.9E+09 0.26 -157.51 1.60 84.01 5.47E-02 18.91 0.24 -47.76 3.0E+09 0.26 -158.21 1.55 83.35 5.50E-02 19.03 0.23 -48.00 FN3076 Rev.16.00 Jan 24, 2019 Page 8 of 16 HFA3046, HFA3096, HFA3127, HFA3128 25 IB = 200A 20 IB = 160A 100m VCE = 3V IB =120A 15 IB = 80A 10 IB = 40A 5 1m 100 10 1 100n 1 2 3 4 1n 0.5 5 COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE 1.0 10.0 GAIN BANDWIDTH PRODUCT (GHz) 160 140 120 100 80 60 40 20 0 1 0.6 0.7 0.8 0.9 BASE TO EMITTER VOLTAGE (V) FIGURE 2. NPN COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE VCE = 3V DC CURRENT GAIN IB 10n 0 10 100 1m 10m 8.0 VCE = 5V 6.0 VCE = 1V 2.0 0 0.1 100m 10 100 FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS) -100m IB = -400A VCE = -3V IC -10m COLLECTOR CURRENT AND BASE CURRENT (A) IB = -320A -20 1.0 COLLECTOR CURRENT (mA) FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT -25 VCE = 3V 4.0 COLLECTOR CURRENT (A) COLLECTOR CURRENT (mA) IC 10m COLLECTOR CURRENT AND BASE CURRENT (A) COLLECTOR CURRENT (mA) Typical Performance Curves IB = -240A -15 IB = -160A -10 IB = -80A -5 IB -1m -100 -10 -1 -100n -10n 0 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE FN3076 Rev.16.00 Jan 24, 2019 -1n -0.5 -0.6 -0.7 -0.8 -0.9 BASE TO EMITTER VOLTAGE (V) FIGURE 6. PNP COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE Page 9 of 16 -1.0 HFA3046, HFA3096, HFA3127, HFA3128 Typical Performance Curves (Continued) 5.0 GAIN BANDWIDTH PRODUCT (GHz) VCE = -3V 160 DC CURRENT GAIN 140 120 100 80 60 40 20 0 -1 -10 -100 -1m -10m COLLECTOR CURRENT (A) FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR CURRENT FN3076 Rev.16.00 Jan 24, 2019 -100m VCE = -5V 4.0 VCE = -3V 3.0 VCE = -1V 2.0 1.0 -0.1 -1.0 -10 -100 COLLECTOR CURRENT (mA) FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS) Page 10 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Die Characteristics DIE DIMENSIONS: PASSIVATION: 53 mils x 52 mils 1340m x 1320m Type: Nitride Thickness: 4kA 0.5kA METALLIZATION: PROCESS: Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kA 0.4kA Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kA 0.8kA UHF-1 SUBSTRATE POTENTIAL: (POWERED UP) Unbiased Metallization Mask Layout HFA3096, HFA3127, HFA3128 2 1340m (53 mils) 1 16 15 3 14 4 13 5 12 6 11 7 8 9 10 1320m (52 mils) HFA3046 2 1 14 13 3 1340m (53 mils) 12 4 5 11 6 10 7 8 9 1320m (52 mils) Pad numbers correspond to SOIC pinout. FN3076 Rev.16.00 Jan 24, 2019 Page 11 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION Jan 24, 2019 FN3076.16 Added Related Literature section. Updated ordering information table by adding tape and reel versions, and updating notes. Updated links throughout document. Updated POD M16.15 to the latest revision, changes are as follows: -Update graphics to new standard layout, removing the dimension table. Updated disclaimer. Aug 11, 2015 FN3076.15 Added Revision History beginning with Rev 15. Updated ordering information table with "No longer available or supported" next to HFA3128 part numbers FN3076 Rev.16.00 Jan 24, 2019 CHANGE Page 12 of 16 HFA3046, HFA3096, HFA3127, HFA3128 Package Outline Drawings For the most recent package outline drawing, see M14.15. M14.15 14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE Rev 1, 10/09 8.65 A 3 4 0.10 C A-B 2X 6 14 DETAIL"A" 8 0.220.03 D 6.0 3.9 4 0.10 C D 2X 0.20 C 2X 7 PIN NO.1 ID MARK 5 0.31-0.51 B 3 (0.35) x 45 4 4 6 0.25 M C A-B D TOP VIEW 0.10 C 1.75 MAX H 1.25 MIN 0.25 GAUGE PLANE C SEATING PLANE 0.10 C 0.10-0.25 1.27 SIDE VIEW (1.27) DETAIL "A" (0.6) NOTES: 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to AMSEY14.5m-1994. 3. Datums A and B to be determined at Datum H. (5.40) 4. Dimension does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25mm per side. 5. The pin #1 indentifier may be either a mold or mark feature. (1.50) 6. Does not include dambar protrusion. Allowable dambar protrusion shall be 0.10mm total in excess of lead width at maximum condition. 7. Reference to JEDEC MS-012-AB. TYPICAL RECOMMENDED LAND PATTERN FN3076 Rev.16.00 Jan 24, 2019 Page 13 of 16 HFA3046, HFA3096, HFA3127, HFA3128 M16.15 (JEDEC MS-012-AC ISSUE C) For the most recent package outline drawing, see M16.15. 16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE Rev 2, 11/17 FN3076 Rev.16.00 Jan 24, 2019 Page 14 of 16 HFA3046, HFA3096, HFA3127, HFA3128 L16.3x3 For the most recent package outline drawing, see L16.3x3. 16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE Rev 2, 4/07 4X 1.5 3.00 12X 0.50 A B 6 PIN 1 INDEX AREA 6 PIN #1 INDEX AREA 16 13 1 3.00 12 1 .50 0 . 15 9 (4X) 4 0.15 5 8 0.10 M C A B + 0.07 4 16X 0.23 - 0.05 TOP VIEW 16X 0.40 0.10 BOTTOM VIEW SEE DETAIL "X" 0.10 C 0 . 90 0.1 C BASE PLANE ( 2. 80 TYP ) ( SEATING PLANE 0.08 C 1. 50 ) SIDE VIEW ( 12X 0 . 5 ) ( 16X 0 . 23 ) C ( 16X 0 . 60) 0 . 2 REF 5 0 . 00 MIN. 0 . 05 MAX. TYPICAL RECOMMENDED LAND PATTERN DETAIL "X" NOTES: 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994. 3. Unless otherwise specified, tolerance : Decimal 0.05 4. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 5. Tiebar shown (if present) is a non-functional feature. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 indentifier may be either a mold or mark feature. 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