FN3076 Rev.16.00 Page 1 of 16
Jan 24, 2019
FN3076
Rev.16.00
Jan 24, 2019
HFA3046, HFA3096, HFA3127, HFA3128
Ultra High Frequency Transistor Arrays
DATASHEET
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
ultra high frequency transistor arrays that are fabricated from
the Renesas complementary bipolar UHF-1 process. Each
array consists of five dielectrically isolated transistors on a
common monolithic substrate. The NPN transistors exhibit a
fT of 8GHz while the PNP transistors provide a fT of 5.5GHz.
Both types exhibit low noise (3.5dB), making them ideal for
high frequency amplifier and mixer applications.
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an
NPN-PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
Application note AN9315 illustrates the use of these devices
as RF amplifiers.
Related Literature
For a full list of related documents, visit our website:
•HFA3046, HFA3096, HFA3127, HFA3128 device pages
Features
• NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
• NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
• NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . .5.5GHz
• PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V
• Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
• Collector to collector leakage. . . . . . . . . . . . . . . . . . .<1pA
• Complete isolation between transistors
• Pin compatible with industry standard 3XXX series arrays
• Pb-free (RoHS compliant)
Applications
• VHF/UHF amplifiers
• VHF/UHF mixers
• IF converters
• Synchronous detectors
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 2 of 16
Jan 24, 2019
Ordering Information
PART NUMBER
(Notes 2, 3)
PART
MARKING
TEMP. RANGE
(°C)
TAPE AND REEL
(UNITS) (Note 1)
PACKAGE
(RoHS Compliant)
PKG.
DWG. #
HFA3046BZ HFA3046BZ -55 to +125 - 14 Ld SOIC M14.15
HFA3096BZ HFA3096BZ -55 to +125 - 16 Ld SOIC M16.15
HFA3096BZ96 HFA3096BZ -55 to +125 2.5k 16 Ld SOIC M16.15
HFA3127BZ HFA3127BZ -55 to +125 - 16 Ld SOIC M16.15
HFA3127BZ96 HFA3127BZ -55 to +125 2.5k 16 Ld SOIC M16.15
HFA3127RZ 127Z -55 to +125 - 16 Ld 3x3 QFN L16.3x3
HFA3127RZ96 127Z -55 to +125 6k 16 Ld 3x3 QFN L16.3x3
HFA3128BZ (No longer available or supported) HFA3128BZ -55 to +125 - 16 Ld SOIC M16.15
HFA3128RZ (No longer available or supported) 128Z -55 to +125 - 16 Ld 3x3 QFN L16.3x3
NOTE:
1. See TB347 for details about reel specifications.
2. These Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin
plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Pb-free
products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), see the HFA3046, HFA3096, HFA3127, or HFA3128 device page. For more information about MSL, see
TB363.
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 3 of 16
Jan 24, 2019
Pinouts
HFA3046
(14 LD SOIC)
TOP VIEW
HFA3096
(16 LD SOIC)
TOP VIEW
HFA3127
(16 LD SOIC)
TOP VIEW
HFA3128
(16 LD SOIC)
TOP VIEW
HFA3127, HFA3128
(16 LD 3X3 QFN)
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Q1
Q2
Q3
Q4
Q5
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q1
NC
Q3
Q4
Q2
Q5
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q1
Q2
Q3Q4
NC
Q5
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q1
Q2
Q3Q4
NC
Q5
1
3
4
15
Q2E
Q2B
NC
Q3C
Q2C
Q1C
Q1E
Q1B
16 14 13
2
12
10
9
11
6578
Q5B
Q5E
Q5C
Q4C
Q3E
Q3B
Q4B
Q4E
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 4 of 16
Jan 24, 2019
Absolute Maximum Ratings Thermal Information
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . . 18.5mA at TJ = +150°C
34mA at TJ = +125°C
37mA at TJ = +110°C
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Thermal Resistance (Typical) JA (°C/W) JC (°C/W)
14 Ld SOIC Package (Note 4) . . . . . . . 120 N/A
16 Ld SOIC Package (Note 4) . . . . . . . 115 N/A
QFN Package (Notes 5, 6). . . . . . . . . . 57 10
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . +175°C
Maximum Junction Temperature (Plastic Package) . . . . . . +150°C
Maximum Storage Temperature Range. . . . . . . . . -65°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” can cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
4. JA is measured with the component mounted on an evaluation PC board in free air.
5. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
6. JA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See TB379 for details.
Electrical Specifications TA = +25°C
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITMIN TYP MAX MIN TYP MAX
DC NPN CHARACTERISTICS
Collector to Base Breakdown
Voltage, V(BR)CBO
IC = 100µA, IE = 0 12 18 - 12 18 - V
Collector to Emitter Breakdown
Voltage, V(BR)CEO
IC = 100µA, IB = 0 8 12 - 8 12 - V
Collector to Emitter Breakdown
Voltage, V(BR)CES
IC = 100µA, Base Shorted to Emitter 10 20 - 10 20 - V
Emitter to Base Breakdown
Voltage, V(BR)EBO
IE = 10µA, IC = 0 5.5 6 - 5.5 6 - V
Collector-Cutoff-Current, ICEO VCE = 6V, IB = 0 - 2 100 - 2 100 nA
Collector-Cutoff-Current, ICBO VCB = 8V, IE = 0 - 0.1 10 - 0.1 10 nA
Collector to Emitter Saturation
Voltage, VCE(SAT)
IC = 10mA, IB = 1mA - 0.3 0.5 - 0.3 0.5 V
Base to Emitter Voltage, VBE IC = 10mA - 0.85 0.95 - 0.85 0.95 V
DC Forward-Current Transfer
Ratio, hFE
IC = 10mA, VCE = 2V 40 130 - 40 130 -
Early Voltage, VAIC = 1mA, VCE = 3.5V 20 50 - 20 50 - V
Base to Emitter Voltage Drift IC = 10mA - -1.5 - - -1.5 - mV/°C
Collector to Collector Leakage - 1 - - 1 - pA
DYNAMIC NPN CHARACTERISTICS
Noise Figure f = 1.0GHz, VCE = 5V,
IC = 5mA, ZS = 50Ω
- 3.5 - - 3.5 - dB
fT Current Gain-Bandwidth
Product
IC = 1mA, VCE = 5V - 5.5 - - 5.5 - GHz
IC = 10mA, VCE = 5V - 8 - - 8 - GHz
Power Gain-Bandwidth Product,
fMAX
IC = 10mA, VCE = 5V - 6 - - 2.5 - GHz
Base to Emitter Capacitance VBE = -3V - 200 - - 500 - fF
Collector to Base Capacitance VCB = 3V - 200 - - 500 - fF
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 5 of 16
Jan 24, 2019
Electrical Specifications TA = +25°C
PARAMETER TEST CONDITIONS
DIE SOIC, QFN
UNITSMIN TYP MAX MIN TYP MAX
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V(BR)CBO
IC = -100µA, IE = 0 10 15 - 10 15 - V
Collector to Emitter Breakdown
Voltage, V(BR)CEO
IC = -100µA, IB = 0 8 15 - 8 15 - V
Collector to Emitter Breakdown
Voltage, V(BR)CES
IC = -100µA, Base Shorted to Emitter 10 15 - 10 15 - V
Emitter to Base Breakdown
Voltage, V(BR)EBO
IE = -10µA, IC = 0 4.5 5 - 4.5 5 - V
Collector Cutoff Current, ICEO VCE = -6V, IB = 0 - 2 100 - 2 100 nA
Collector Cutoff Current, ICBO VCB = -8V, IE = 0 - 0.1 10 - 0.1 10 nA
Collector to Emitter Saturation
Voltage, VCE(SAT)
IC = -10mA, IB = -1mA - 0.3 0.5 - 0.3 0.5 V
Base to Emitter Voltage, VBE IC = -10mA - 0.85 0.95 - 0.85 0.95 V
DC Forward-Current Transfer
Ratio, hFE
IC = -10mA, VCE = -2V 20 60 - 20 60 -
Early Voltage, VAIC = -1mA, VCE = -3.5V 10 20 - 10 20 - V
Base to Emitter Voltage Drift IC = -10mA - -1.5 - - -1.5 - mV/°C
Collector to Collector Leakage - 1 - - 1 - pA
DYNAMIC PNP CHARACTERISTICS
Noise Figure f = 1.0GHz, VCE = -5V,
IC = -5mA, ZS = 50
- 3.5 - - 3.5 - dB
fT Current Gain-Bandwidth
Product
IC = -1mA, VCE = -5V - 2 - - 2 - GHz
IC = -10mA, VCE = -5V - 5.5 - - 5.5 - GHz
Power Gain-Bandwidth
Product
IC = -10mA, VCE = -5V - 3 - - 2 - GHz
Base to Emitter Capacitance VBE = 3V - 200 - - 500 - fF
Collector to Base Capacitance VCB = -3V - 300 - - 600 - fF
Common Emitter S-Parameters of NPN 3µmx50µm Transistor
FREQ. (Hz) |S11| PHASE(S11)|S
21| PHASE(S21)|S
12| PHASE(S12)|S
22|PHASE(S
22)
VCE = 5V and IC = 5mA
1.0E+08 0.83 -11.78 11.07 168.57 1.41E-02 78.88 0.97 -11.05
2.0E+08 0.79 -22.82 10.51 157.89 2.69E-02 68.63 0.93 -21.35
3.0E+08 0.73 -32.64 9.75 148.44 3.75E-02 59.58 0.86 -30.44
4.0E+08 0.67 -41.08 8.91 140.36 4.57E-02 51.90 0.79 -38.16
5.0E+08 0.61 -48.23 8.10 133.56 5.19E-02 45.50 0.73 -44.59
6.0E+08 0.55 -54.27 7.35 127.88 5.65E-02 40.21 0.67 -49.93
7.0E+08 0.50 -59.41 6.69 123.10 6.00E-02 35.82 0.62 -54.37
8.0E+08 0.46 -63.81 6.11 119.04 6.27E-02 32.15 0.57 -58.10
9.0E+08 0.42 -67.63 5.61 115.57 6.47E-02 29.07 0.53 -61.25
1.0E+09 0.39 -70.98 5.17 112.55 6.63E-02 26.45 0.50 -63.96
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 6 of 16
Jan 24, 2019
1.1E+09 0.36 -73.95 4.79 109.91 6.75E-02 24.19 0.47 -66.31
1.2E+09 0.34 -76.62 4.45 107.57 6.85E-02 22.24 0.45 -68.37
1.3E+09 0.32 -79.04 4.15 105.47 6.93E-02 20.53 0.43 -70.19
1.4E+09 0.30 -81.25 3.89 103.57 7.00E-02 19.02 0.41 -71.83
1.5E+09 0.28 -83.28 3.66 101.84 7.05E-02 17.69 0.40 -73.31
1.6E+09 0.27 -85.17 3.45 100.26 7.10E-02 16.49 0.39 -74.66
1.7E+09 0.25 -86.92 3.27 98.79 7.13E-02 15.41 0.38 -75.90
1.8E+09 0.24 -88.57 3.10 97.43 7.17E-02 14.43 0.37 -77.05
1.9E+09 0.23 -90.12 2.94 96.15 7.19E-02 13.54 0.36 -78.12
2.0E+09 0.22 -91.59 2.80 94.95 7.21E-02 12.73 0.35 -79.13
2.1E+09 0.21 -92.98 2.68 93.81 7.23E-02 11.98 0.35 -80.09
2.2E+09 0.20 -94.30 2.56 92.73 7.25E-02 11.29 0.34 -80.99
2.3E+09 0.20 -95.57 2.45 91.70 7.27E-02 10.64 0.34 -81.85
2.4E+09 0.19 -96.78 2.35 90.72 7.28E-02 10.05 0.33 -82.68
2.5E+09 0.18 -97.93 2.26 89.78 7.29E-02 9.49 0.33 -83.47
2.6E+09 0.18 -99.05 2.18 88.87 7.30E-02 8.96 0.33 -84.23
2.7E+09 0.17 -100.12 2.10 88.00 7.31E-02 8.47 0.33 -84.97
2.8E+09 0.17 -101.15 2.02 87.15 7.31E-02 8.01 0.33 -85.68
2.9E+09 0.16 -102.15 1.96 86.33 7.32E-02 7.57 0.33 -86.37
3.0E+09 0.16 -103.11 1.89 85.54 7.32E-02 7.16 0.33 -87.05
VCE = 5V and IC = 10mA
1.0E+08 0.72 -16.43 15.12 165.22 1.27E-02 75.41 0.95 -14.26
2.0E+08 0.67 -31.26 13.90 152.04 2.34E-02 62.89 0.88 -26.95
3.0E+08 0.60 -43.76 12.39 141.18 3.13E-02 52.58 0.79 -37.31
4.0E+08 0.53 -54.00 10.92 132.57 3.68E-02 44.50 0.70 -45.45
5.0E+08 0.47 -62.38 9.62 125.78 4.05E-02 38.23 0.63 -51.77
6.0E+08 0.42 -69.35 8.53 120.37 4.31E-02 33.34 0.57 -56.72
7.0E+08 0.37 -75.26 7.62 116.00 4.49E-02 29.47 0.51 -60.65
8.0E+08 0.34 -80.36 6.86 112.39 4.63E-02 26.37 0.47 -63.85
9.0E+08 0.31 -84.84 6.22 109.36 4.72E-02 23.84 0.44 -66.49
1.0E+09 0.29 -88.83 5.69 106.77 4.80E-02 21.75 0.41 -68.71
1.1E+09 0.27 -92.44 5.23 104.51 4.86E-02 20.00 0.39 -70.62
1.2E+09 0.25 -95.73 4.83 102.53 4.90E-02 18.52 0.37 -72.28
1.3E+09 0.24 -98.75 4.49 100.75 4.94E-02 17.25 0.35 -73.76
1.4E+09 0.22 -101.55 4.19 99.16 4.97E-02 16.15 0.34 -75.08
1.5E+09 0.21 -104.15 3.93 97.70 4.99E-02 15.19 0.33 -76.28
1.6E+09 0.20 -106.57 3.70 96.36 5.01E-02 14.34 0.32 -77.38
1.7E+09 0.20 -108.85 3.49 95.12 5.03E-02 13.60 0.31 -78.41
1.8E+09 0.19 -110.98 3.30 93.96 5.05E-02 12.94 0.31 -79.37
1.9E+09 0.18 -113.00 3.13 92.87 5.06E-02 12.34 0.30 -80.27
Common Emitter S-Parameters of NPN 3µmx50µm Transistor (Continued)
FREQ. (Hz) |S11| PHASE(S11)|S
21| PHASE(S21)|S
12| PHASE(S12)|S
22|PHASE(S
22)
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 7 of 16
Jan 24, 2019
2.0E+09 0.18 -114.90 2.98 91.85 5.07E-02 11.81 0.30 -81.13
2.1E+09 0.17 -116.69 2.84 90.87 5.08E-02 11.33 0.30 -81.95
2.2E+09 0.17 -118.39 2.72 89.94 5.09E-02 10.89 0.29 -82.74
2.3E+09 0.16 -120.01 2.60 89.06 5.10E-02 10.50 0.29 -83.50
2.4E+09 0.16 -121.54 2.49 88.21 5.11E-02 10.13 0.29 -84.24
2.5E+09 0.16 -122.99 2.39 87.39 5.12E-02 9.80 0.29 -84.95
2.6E+09 0.15 -124.37 2.30 86.60 5.12E-02 9.49 0.29 -85.64
2.7E+09 0.15 -125.69 2.22 85.83 5.13E-02 9.21 0.29 -86.32
2.8E+09 0.15 -126.94 2.14 85.09 5.13E-02 8.95 0.29 -86.98
2.9E+09 0.15 -128.14 2.06 84.36 5.14E-02 8.71 0.29 -87.62
3.0E+09 0.14 -129.27 1.99 83.66 5.15E-02 8.49 0.29 -88.25
Common Emitter S-Parameters of PNP 3µmx50µm Transistor
FREQ. (Hz) |S11| PHASE(S11)|S
21| PHASE(S21)|S
12| PHASE(S12)|S
22|PHASE(S
22)
VCE = -5V and IC = -5mA
1.0E+08 0.72 -16.65 10.11 166.77 1.66E-02 77.18 0.96 -10.76
2.0E+08 0.68 -32.12 9.44 154.69 3.10E-02 65.94 0.90 -20.38
3.0E+08 0.62 -45.73 8.57 144.40 4.23E-02 56.39 0.82 -28.25
4.0E+08 0.57 -57.39 7.68 135.95 5.05E-02 48.66 0.74 -34.31
5.0E+08 0.52 -67.32 6.86 129.11 5.64E-02 42.52 0.67 -38.81
6.0E+08 0.47 -75.83 6.14 123.55 6.07E-02 37.66 0.61 -42.10
7.0E+08 0.43 -83.18 5.53 118.98 6.37E-02 33.79 0.55 -44.47
8.0E+08 0.40 -89.60 5.01 115.17 6.60E-02 30.67 0.51 -46.15
9.0E+08 0.38 -95.26 4.56 111.94 6.77E-02 28.14 0.47 -47.33
1.0E+09 0.36 -100.29 4.18 109.17 6.91E-02 26.06 0.44 -48.15
1.1E+09 0.34 -104.80 3.86 106.76 7.01E-02 24.33 0.41 -48.69
1.2E+09 0.33 -108.86 3.58 104.63 7.09E-02 22.89 0.39 -49.05
1.3E+09 0.32 -112.53 3.33 102.72 7.16E-02 21.67 0.37 -49.26
1.4E+09 0.30 -115.86 3.12 101.01 7.22E-02 20.64 0.36 -49.38
1.5E+09 0.30 -118.90 2.92 99.44 7.27E-02 19.76 0.34 -49.43
1.6E+09 0.29 -121.69 2.75 98.01 7.32E-02 19.00 0.33 -49.44
1.7E+09 0.28 -124.24 2.60 96.68 7.35E-02 18.35 0.32 -49.43
1.8E+09 0.28 -126.59 2.47 95.44 7.39E-02 17.79 0.31 -49.40
1.9E+09 0.27 -128.76 2.34 94.29 7.42E-02 17.30 0.30 -49.38
2.0E+09 0.27 -130.77 2.23 93.19 7.45E-02 16.88 0.30 -49.36
2.1E+09 0.26 -132.63 2.13 92.16 7.47E-02 16.52 0.29 -49.35
2.2E+09 0.26 -134.35 2.04 91.18 7.50E-02 16.20 0.28 -49.35
2.3E+09 0.26 -135.96 1.95 90.24 7.52E-02 15.92 0.28 -49.38
2.4E+09 0.25 -137.46 1.87 89.34 7.55E-02 15.68 0.28 -49.42
Common Emitter S-Parameters of NPN 3µmx50µm Transistor (Continued)
FREQ. (Hz) |S11| PHASE(S11)|S
21| PHASE(S21)|S
12| PHASE(S12)|S
22|PHASE(S
22)
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 8 of 16
Jan 24, 2019
2.5E+09 0.25 -138.86 1.80 88.48 7.57E-02 15.48 0.27 -49.49
2.6E+09 0.25 -140.17 1.73 87.65 7.59E-02 15.30 0.27 -49.56
2.7E+09 0.25 -141.39 1.67 86.85 7.61E-02 15.15 0.26 -49.67
2.8E+09 0.25 -142.54 1.61 86.07 7.63E-02 15.01 0.26 -49.81
2.9E+09 0.24 -143.62 1.56 85.31 7.65E-02 14.90 0.26 -49.96
3.0E+09 0.24 -144.64 1.51 84.58 7.67E-02 14.81 0.26 -50.13
VCE = -5V, IC = -10mA
1.0E+08 0.58 -23.24 13.03 163.45 1.43E-02 73.38 0.93 -13.46
2.0E+08 0.53 -44.07 11.75 149.11 2.58E-02 60.43 0.85 -24.76
3.0E+08 0.48 -61.50 10.25 137.78 3.38E-02 50.16 0.74 -33.10
4.0E+08 0.43 -75.73 8.88 129.12 3.90E-02 42.49 0.65 -38.83
5.0E+08 0.40 -87.36 7.72 122.49 4.25E-02 36.81 0.58 -42.63
6.0E+08 0.37 -96.94 6.78 117.33 4.48E-02 32.59 0.51 -45.07
7.0E+08 0.35 -104.92 6.01 113.22 4.64E-02 29.39 0.47 -46.60
8.0E+08 0.33 -111.64 5.39 109.85 4.76E-02 26.94 0.43 -47.49
9.0E+08 0.32 -117.36 4.87 107.05 4.85E-02 25.04 0.40 -47.97
1.0E+09 0.31 -122.27 4.44 104.66 4.92E-02 23.55 0.37 -48.18
1.1E+09 0.30 -126.51 4.07 102.59 4.97E-02 22.37 0.35 -48.20
1.2E+09 0.30 -130.21 3.76 100.76 5.02E-02 21.44 0.33 -48.11
1.3E+09 0.29 -133.46 3.49 99.14 5.06E-02 20.70 0.32 -47.95
1.4E+09 0.29 -136.33 3.25 97.67 5.09E-02 20.11 0.31 -47.77
1.5E+09 0.28 -138.89 3.05 96.33 5.12E-02 19.65 0.30 -47.58
1.6E+09 0.28 -141.17 2.87 95.10 5.15E-02 19.29 0.29 -47.39
1.7E+09 0.28 -143.21 2.70 93.96 5.18E-02 19.01 0.28 -47.23
1.8E+09 0.28 -145.06 2.56 92.90 5.21E-02 18.80 0.27 -47.09
1.9E+09 0.27 -146.73 2.43 91.90 5.23E-02 18.65 0.27 -46.98
2.0E+09 0.27 -148.26 2.31 90.95 5.26E-02 18.55 0.26 -46.91
2.1E+09 0.27 -149.65 2.20 90.05 5.28E-02 18.49 0.26 -46.87
2.2E+09 0.27 -150.92 2.10 89.20 5.30E-02 18.46 0.25 -46.87
2.3E+09 0.27 -152.10 2.01 88.37 5.33E-02 18.47 0.25 -46.90
2.4E+09 0.27 -153.18 1.93 87.59 5.35E-02 18.50 0.25 -46.97
2.5E+09 0.27 -154.17 1.86 86.82 5.38E-02 18.55 0.24 -47.07
2.6E+09 0.26 -155.10 1.79 86.09 5.40E-02 18.62 0.24 -47.18
2.7E+09 0.26 -155.96 1.72 85.38 5.42E-02 18.71 0.24 -47.34
2.8E+09 0.26 -156.76 1.66 84.68 5.45E-02 18.80 0.24 -47.55
2.9E+09 0.26 -157.51 1.60 84.01 5.47E-02 18.91 0.24 -47.76
3.0E+09 0.26 -158.21 1.55 83.35 5.50E-02 19.03 0.23 -48.00
Common Emitter S-Parameters of PNP 3µmx50µm Transistor (Continued)
FREQ. (Hz) |S11| PHASE(S11)|S
21| PHASE(S21)|S
12| PHASE(S12)|S
22|PHASE(S
22)
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 9 of 16
Jan 24, 2019
Typical Performance Curves
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 6. PNP COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
IB = 200µA
COLLECTOR TO EMITTER VOLTAGE (V)
IB = 160µA
IB =120µA
IB = 80µA
IB = 40µA
12345
0
25
20
15
10
5
COLLECTOR CURRENT (mA)
IB
BASE TO EMITTER VOLTAGE (V)
VCE = 3V
0.60.70.80.91.0
100m
10m
1m
100µ
COLLECTOR CURRENT
IC
0.5
10µ
1µ
100n
10n
1n
AND BASE CURRENT (A)
COLLECTOR CURRENT (A)
VCE = 3V
160
140
120
DC CURRENT GAIN
1
100
80
60
40
20
0
101001m 10m 100m
COLLECTOR CURRENT (mA)
VCE = 1V
1.0 10 100
10.0
8.0
6.0
GAIN BANDWIDTH PRODUCT (GHz)
0.1
VCE = 5V
VCE = 3V
4.0
2.0
0
IB = -400µA
COLLECTOR TO EMITTER VOLTAGE (V)
IB = -80µA
-1 -2 -3 -4 -5
0
-25
-20
-15
-10
-5
COLLECTOR CURRENT (mA)
0
IB = -320µA
IB = -240µA
IB = -160µA
BASE TO EMITTER VOLTAGE (V)
IB
VCE = -3V
-0.6 -0.7 -0.8 -0.9 -1.0
-100m
-10m
-1m
-100µ
COLLECTOR CURRENT
IC
-0.5
-10µ
-1µ
-100n
-10n
-1n
AND BASE CURRENT (A)
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 10 of 16
Jan 24, 2019
FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR
CURRENT
FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
Typical Performance Curves (Continued)
COLLECTOR CURRENT (A)
160
140
120
DC CURRENT GAIN
-1
100
80
60
40
20
0
-10-100-1m -10m -100m
VCE = -3V
COLLECTOR CURRENT (mA)
VCE = -5V
5.0
GAIN BANDWIDTH PRODUCT (GHz)
4.0
3.0
2.0
1.0
-0.1 -1.0 -10 -100
VCE = -3V
VCE = -1V
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 11 of 16
Jan 24, 2019
Die Characteristics
DIE DIMENSIONS:
53 mils x 52 mils
1340µm x 1320µm
METALLIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
PASSIVATION:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
PROCESS:
UHF-1
SUBSTRATE POTENTIAL: (POWERED UP)
Unbiased
Metallization Mask Layout
HFA3096, HFA3127, HFA3128
HFA3046
Pad numbers correspond to SOIC pinout.
12
3
4
5
6
78 910
11
12
13
14
1516
1320µm
(52 mils)
1340µm
(53 mils)
12
3
4
5
6
78 9
10
11
12
1314
1320µm
(52 mils)
1340µm
(53 mils)
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 12 of 16
Jan 24, 2019
Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted.
Please go to the web to make sure that you have the latest revision.
DATE REVISION CHANGE
Jan 24, 2019 FN3076.16 Added Related Literature section.
Updated ordering information table by adding tape and reel versions, and updating notes.
Updated links throughout document.
Updated POD M16.15 to the latest revision, changes are as follows:
-Update graphics to new standard layout, removing the dimension table.
Updated disclaimer.
Aug 11, 2015 FN3076.15 Added Revision History beginning with Rev 15.
Updated ordering information table with “No longer available or supported” next to HFA3128 part numbers
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 13 of 16
Jan 24, 2019
Package Outline Drawings
M14.15
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
Rev 1, 10/09
A
D
4
0.25 A-BMC
C
0.10 C
5B
D
3
0.10 A-BC
4
0.20 C 2X
2X
0.10 DC 2X
H
0.10 C
6
36
ID MARK
PIN NO.1 (0.35) x 45°
SEATING PLANE
GAUGE PLANE
0.25
(5.40)
(1.50)
1.27
0.31-0.51
4° ± 4°
DETAIL"A" 0.22±0.03
0.10-0.25
1.25 MIN
1.75 MAX
(1.27) (0.6)
6.0
8.65
3.9
7
14 8
Dimensioning and tolerancing conform to AMSEY14.5m-1994.
Dimension does not include interlead flash or protrusions.
Dimensions in ( ) for Reference Only.
Interlead flash or protrusions shall not exceed 0.25mm per side.
Datums A and B to be determined at Datum H.
4.
5.
3.
2.
Dimensions are in millimeters.
NOTES:
1.
The pin #1 indentifier may be either a mold or mark feature.
6. Does not include dambar protrusion. Allowable dambar protrusion
7. Reference to JEDEC MS-012-AB.
shall be 0.10mm total in excess of lead width at maximum condition.
DETAIL "A"
SIDE VIEW
TYPICAL RECOMMENDED LAND PATTERN
TOP VIEW
For the most recent package outline drawing, see M14.15.
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 14 of 16
Jan 24, 2019
M16.15 (JEDEC MS-012-AC ISSUE C)
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
Rev 2, 11/17
For the most recent package outline drawing, see M16.15.
HFA3046, HFA3096, HFA3127, HFA3128
FN3076 Rev.16.00 Page 15 of 16
Jan 24, 2019
L16.3x3
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 2, 4/07
located within the zone indicated. The pin #1 indentifier may be
Unless otherwise specified, tolerance : Decimal ± 0.05
Tiebar shown (if present) is a non-functional feature.
The configuration of the pin #1 identifier is optional, but must be
between 0.15mm and 0.30mm from the terminal tip.
Dimension b applies to the metallized terminal and is measured
Dimensions in ( ) for Reference Only.
Dimensioning and tolerancing conform to AMSE Y14.5m-1994.
6.
either a mold or mark feature.
3.
5.
4.
2.
Dimensions are in millimeters.1.
NOTES:
BOTTOM VIEW
DETAIL "X"
TYPICAL RECOMMENDED LAND PATTERN
TOP VIEW
BOTTOM VIEW
SIDE VIEW
( 2. 80 TYP )
( 1. 50 )
(4X) 0.15
6
PIN 1
INDEX AREA
3.00
0 . 00 MIN.
0 . 05 MAX.
( 16X 0 . 60)
( 16X 0 . 23 )
C0 . 2 REF 5
16X 0.40 ± 0.10
0 . 90 ± 0.1
( 12X 0 . 5 )
3.00
9
8
B
A
12
1.5
12X 0.50
4X
13
SEATING PLANE
0.08
C
SEE DETAIL "X"
BASE PLANE
C
0.10
16X 0.23
0.10
5
4
4
- 0.05
+ 0.07
BCMA
1 .50 ± 0 . 15
C
PIN #1 INDEX AREA
1
16
6
For the most recent package outline drawing, see L16.3x3.
5HQHVDV(OHFWURQLFV&RUSRUDWLRQ$OOULJKWVUHVHUYHG
1RWLFH
 'HVFULSWLRQVRIFLUFXLWVVRIWZDUHDQGRWKHUUHODWHGLQIRUPDWLRQLQWKLVGRFXPHQWDUHSURYLGHGRQO\WRLOOXVWUDWHWKHRSHUDWLRQRIVHPLFRQGXFWRUSURGXFWV
DQGDSSOLFDWLRQH[DPSOHV<RXDUHIXOO\UHVSRQVLEOHIRUWKHLQFRUSRUDWLRQRUDQ\RWKHUXVHRIWKHFLUFXLWVVRIWZDUHDQGLQIRUPDWLRQLQWKHGHVLJQRI\RXU
SURGXFWRUV\VWHP5HQHVDV(OHFWURQLFVGLVFODLPVDQ\DQGDOOOLDELOLW\IRUDQ\ORVVHVDQGGDPDJHVLQFXUUHGE\\RXRUWKLUGSDUWLHVDULVLQJIURPWKHXVHRI
WKHVHFLUFXLWVVRIWZDUHRULQIRUPDWLRQ
 5HQHVDV(OHFWURQLFVKHUHE\H[SUHVVO\GLVFODLPVDQ\ZDUUDQWLHVDJDLQVWDQGOLDELOLW\IRULQIULQJHPHQWRUDQ\RWKHUFODLPVLQYROYLQJSDWHQWVFRS\ULJKWVRU
RWKHULQWHOOHFWXDOSURSHUW\ULJKWVRIWKLUGSDUWLHVE\RUDULVLQJIURPWKHXVHRI5HQHVDV(OHFWURQLFVSURGXFWVRUWHFKQLFDOLQIRUPDWLRQGHVFULEHGLQWKLV
GRFXPHQWLQFOXGLQJEXWQRWOLPLWHGWRWKHSURGXFWGDWDGUDZLQJVFKDUWVSURJUDPVDOJRULWKPVDQGDSSOLFDWLRQH[DPSOHV
 1ROLFHQVHH[SUHVVLPSOLHGRURWKHUZLVHLVJUDQWHGKHUHE\XQGHUDQ\SDWHQWVFRS\ULJKWVRURWKHULQWHOOHFWXDOSURSHUW\ULJKWVRI5HQHVDV(OHFWURQLFVRU
RWKHUV
 <RXVKDOOQRWDOWHUPRGLI\FRS\RUUHYHUVHHQJLQHHUDQ\5HQHVDV(OHFWURQLFVSURGXFWZKHWKHULQZKROHRULQSDUW5HQHVDV(OHFWURQLFVGLVFODLPVDQ\
DQGDOOOLDELOLW\IRUDQ\ORVVHVRUGDPDJHVLQFXUUHGE\\RXRUWKLUGSDUWLHVDULVLQJIURPVXFKDOWHUDWLRQPRGLILFDWLRQFRS\LQJRUUHYHUVHHQJLQHHULQJ
 5HQHVDV(OHFWURQLFVSURGXFWVDUHFODVVLILHGDFFRUGLQJWRWKHIROORZLQJWZRTXDOLW\JUDGHV6WDQGDUGDQG+LJK4XDOLW\7KHLQWHQGHGDSSOLFDWLRQVIRU
HDFK5HQHVDV(OHFWURQLFVSURGXFWGHSHQGVRQWKHSURGXFWVTXDOLW\JUDGHDVLQGLFDWHGEHORZ
6WDQGDUG &RPSXWHUVRIILFHHTXLSPHQWFRPPXQLFDWLRQVHTXLSPHQWWHVWDQGPHDVXUHPHQWHTXLSPHQWDXGLRDQGYLVXDOHTXLSPHQWKRPH
HOHFWURQLFDSSOLDQFHVPDFKLQHWRROVSHUVRQDOHOHFWURQLFHTXLSPHQWLQGXVWULDOURERWVHWF
+LJK4XDOLW\ 7UDQVSRUWDWLRQHTXLSPHQWDXWRPRELOHVWUDLQVVKLSVHWFWUDIILFFRQWUROWUDIILFOLJKWVODUJHVFDOHFRPPXQLFDWLRQHTXLSPHQWNH\
ILQDQFLDOWHUPLQDOV\VWHPVVDIHW\FRQWUROHTXLSPHQWHWF
8QOHVVH[SUHVVO\GHVLJQDWHGDVDKLJKUHOLDELOLW\SURGXFWRUDSURGXFWIRUKDUVKHQYLURQPHQWVLQD5HQHVDV(OHFWURQLFVGDWDVKHHWRURWKHU5HQHVDV
(OHFWURQLFVGRFXPHQW5HQHVDV(OHFWURQLFVSURGXFWVDUHQRWLQWHQGHGRUDXWKRUL]HGIRUXVHLQSURGXFWVRUV\VWHPVWKDWPD\SRVHDGLUHFWWKUHDWWR
KXPDQOLIHRUERGLO\LQMXU\DUWLILFLDOOLIHVXSSRUWGHYLFHVRUV\VWHPVVXUJLFDOLPSODQWDWLRQVHWFRUPD\FDXVHVHULRXVSURSHUW\GDPDJHVSDFHV\VWHP
XQGHUVHDUHSHDWHUVQXFOHDUSRZHUFRQWUROV\VWHPVDLUFUDIWFRQWUROV\VWHPVNH\SODQWV\VWHPVPLOLWDU\HTXLSPHQWHWF5HQHVDV(OHFWURQLFVGLVFODLPV
DQ\DQGDOOOLDELOLW\IRUDQ\GDPDJHVRUORVVHVLQFXUUHGE\\RXRUDQ\WKLUGSDUWLHVDULVLQJIURPWKHXVHRIDQ\5HQHVDV(OHFWURQLFVSURGXFWWKDWLV
LQFRQVLVWHQWZLWKDQ\5HQHVDV(OHFWURQLFVGDWDVKHHWXVHUVPDQXDORURWKHU5HQHVDV(OHFWURQLFVGRFXPHQW
 :KHQXVLQJ5HQHVDV(OHFWURQLFVSURGXFWVUHIHUWRWKHODWHVWSURGXFWLQIRUPDWLRQGDWDVKHHWVXVHUVPDQXDOVDSSOLFDWLRQQRWHV*HQHUDO1RWHVIRU
+DQGOLQJDQG8VLQJ6HPLFRQGXFWRU'HYLFHVLQWKHUHOLDELOLW\KDQGERRNHWFDQGHQVXUHWKDWXVDJHFRQGLWLRQVDUHZLWKLQWKHUDQJHVVSHFLILHGE\
5HQHVDV(OHFWURQLFVZLWKUHVSHFWWRPD[LPXPUDWLQJVRSHUDWLQJSRZHUVXSSO\YROWDJHUDQJHKHDWGLVVLSDWLRQFKDUDFWHULVWLFVLQVWDOODWLRQHWF5HQHVDV
(OHFWURQLFVGLVFODLPVDQ\DQGDOOOLDELOLW\IRUDQ\PDOIXQFWLRQVIDLOXUHRUDFFLGHQWDULVLQJRXWRIWKHXVHRI5HQHVDV(OHFWURQLFVSURGXFWVRXWVLGHRIVXFK
VSHFLILHGUDQJHV
 $OWKRXJK5HQHVDV(OHFWURQLFVHQGHDYRUVWRLPSURYHWKHTXDOLW\DQGUHOLDELOLW\RI5HQHVDV(OHFWURQLFVSURGXFWVVHPLFRQGXFWRUSURGXFWVKDYHVSHFLILF
FKDUDFWHULVWLFVVXFKDVWKHRFFXUUHQFHRIIDLOXUHDWDFHUWDLQUDWHDQGPDOIXQFWLRQVXQGHUFHUWDLQXVHFRQGLWLRQV8QOHVVGHVLJQDWHGDVDKLJKUHOLDELOLW\
SURGXFWRUDSURGXFWIRUKDUVKHQYLURQPHQWVLQD5HQHVDV(OHFWURQLFVGDWDVKHHWRURWKHU5HQHVDV(OHFWURQLFVGRFXPHQW5HQHVDV(OHFWURQLFVSURGXFWV
DUHQRWVXEMHFWWRUDGLDWLRQUHVLVWDQFHGHVLJQ<RXDUHUHVSRQVLEOHIRULPSOHPHQWLQJVDIHW\PHDVXUHVWRJXDUGDJDLQVWWKHSRVVLELOLW\RIERGLO\LQMXU\
LQMXU\RUGDPDJHFDXVHGE\ILUHDQGRUGDQJHUWRWKHSXEOLFLQWKHHYHQWRIDIDLOXUHRUPDOIXQFWLRQRI5HQHVDV(OHFWURQLFVSURGXFWVVXFKDVVDIHW\
GHVLJQIRUKDUGZDUHDQGVRIWZDUHLQFOXGLQJEXWQRWOLPLWHGWRUHGXQGDQF\ILUHFRQWURODQGPDOIXQFWLRQSUHYHQWLRQDSSURSULDWHWUHDWPHQWIRUDJLQJ
GHJUDGDWLRQRUDQ\RWKHUDSSURSULDWHPHDVXUHV%HFDXVHWKHHYDOXDWLRQRIPLFURFRPSXWHUVRIWZDUHDORQHLVYHU\GLIILFXOWDQGLPSUDFWLFDO\RXDUH
UHVSRQVLEOHIRUHYDOXDWLQJWKHVDIHW\RIWKHILQDOSURGXFWVRUV\VWHPVPDQXIDFWXUHGE\\RX
 3OHDVHFRQWDFWD5HQHVDV(OHFWURQLFVVDOHVRIILFHIRUGHWDLOVDVWRHQYLURQPHQWDOPDWWHUVVXFKDVWKHHQYLURQPHQWDOFRPSDWLELOLW\RIHDFK5HQHVDV
(OHFWURQLFVSURGXFW<RXDUHUHVSRQVLEOHIRUFDUHIXOO\DQGVXIILFLHQWO\LQYHVWLJDWLQJDSSOLFDEOHODZVDQGUHJXODWLRQVWKDWUHJXODWHWKHLQFOXVLRQRUXVHRI
FRQWUROOHGVXEVWDQFHVLQFOXGLQJZLWKRXWOLPLWDWLRQWKH(85R+6'LUHFWLYHDQGXVLQJ5HQHVDV(OHFWURQLFVSURGXFWVLQFRPSOLDQFHZLWKDOOWKHVH
DSSOLFDEOHODZVDQGUHJXODWLRQV5HQHVDV(OHFWURQLFVGLVFODLPVDQ\DQGDOOOLDELOLW\IRUGDPDJHVRUORVVHVRFFXUULQJDVDUHVXOWRI\RXUQRQFRPSOLDQFH
ZLWKDSSOLFDEOHODZVDQGUHJXODWLRQV
 5HQHVDV(OHFWURQLFVSURGXFWVDQGWHFKQRORJLHVVKDOOQRWEHXVHGIRURULQFRUSRUDWHGLQWRDQ\SURGXFWVRUV\VWHPVZKRVHPDQXIDFWXUHXVHRUVDOHLV
SURKLELWHGXQGHUDQ\DSSOLFDEOHGRPHVWLFRUIRUHLJQODZVRUUHJXODWLRQV<RXVKDOOFRPSO\ZLWKDQ\DSSOLFDEOHH[SRUWFRQWUROODZVDQGUHJXODWLRQV
SURPXOJDWHGDQGDGPLQLVWHUHGE\WKHJRYHUQPHQWVRIDQ\FRXQWULHVDVVHUWLQJMXULVGLFWLRQRYHUWKHSDUWLHVRUWUDQVDFWLRQV
 ,WLVWKHUHVSRQVLELOLW\RIWKHEX\HURUGLVWULEXWRURI5HQHVDV(OHFWURQLFVSURGXFWVRUDQ\RWKHUSDUW\ZKRGLVWULEXWHVGLVSRVHVRIRURWKHUZLVHVHOOVRU
WUDQVIHUVWKHSURGXFWWRDWKLUGSDUW\WRQRWLI\VXFKWKLUGSDUW\LQDGYDQFHRIWKHFRQWHQWVDQGFRQGLWLRQVVHWIRUWKLQWKLVGRFXPHQW
 7KLVGRFXPHQWVKDOOQRWEHUHSULQWHGUHSURGXFHGRUGXSOLFDWHGLQDQ\IRUPLQZKROHRULQSDUWZLWKRXWSULRUZULWWHQFRQVHQWRI5HQHVDV(OHFWURQLFV
 3OHDVHFRQWDFWD5HQHVDV(OHFWURQLFVVDOHVRIILFHLI\RXKDYHDQ\TXHVWLRQVUHJDUGLQJWKHLQIRUPDWLRQFRQWDLQHGLQWKLVGRFXPHQWRU5HQHVDV
(OHFWURQLFVSURGXFWV
1RWH 5HQHVDV(OHFWURQLFVDVXVHGLQWKLVGRFXPHQWPHDQV5HQHVDV(OHFWURQLFV&RUSRUDWLRQDQGDOVRLQFOXGHVLWVGLUHFWO\RULQGLUHFWO\FRQWUROOHG
VXEVLGLDULHV
1RWH 5HQHVDV(OHFWURQLFVSURGXFWVPHDQVDQ\SURGXFWGHYHORSHGRUPDQXIDFWXUHGE\RUIRU5HQHVDV(OHFWURQLFV
5HY1RYHPEHU
&RUSRUDWH+HDGTXDUWHUV &RQWDFW,QIRUPDWLRQ
72<268)25(6,$7R\RVX
.RWRNX7RN\R-DSDQ
ZZZUHQHVDVFRP
)RUIXUWKHULQIRUPDWLRQRQDSURGXFWWHFKQRORJ\WKHPRVWXSWRGDWH
YHUVLRQRIDGRFXPHQWRU\RXUQHDUHVWVDOHVRIILFHSOHDVHYLVLW
ZZZUHQHVDVFRPFRQWDFW
7UDGHPDUNV
5HQHVDVDQGWKH5HQHVDVORJRDUHWUDGHPDUNVRI5HQHVDV(OHFWURQLFV
&RUSRUDWLRQ$OOWUDGHPDUNVDQGUHJLVWHUHGWUDGHPDUNVDUHWKHSURSHUW\
RIWKHLUUHVSHFWLYHRZQHUV
Corporate Headquarters
TOYOSU FORESIA, 3-2-24 Toyosu,
Koto-ku, Tokyo 135-0061, Japan
www.renesas.com
Contact Information
For further information on a product, technology, the most up-to-date
version of a document, or your nearest sales office, please visit:
www.renesas.com/contact/
Trademarks
Renesas and the Renesas logo are trademarks of Renesas Electronics
Corporation. All trademarks and registered trademarks are the property
of their respective owners.