OL DE 3a7soar coi7su7 bt 3875081 G & SOLID STATE OIE 17547) Ds 7- 33-4 t Pro Electron Power Transistors 7 'BSB:2/ BD533, BD534, BD535, BD536, BD537, BD538 File Number 1236 Epitaxial-Base, Silicon TERMINAL DESIGNATIONS N-P-N and P-N-P VERSAWATT Transistors [" &_. * General-Purpose Medium-Power Types for eranee) @) O Ges Switching and Amplifier Applications Features: : TOP VIEW 8 @ Low saturation voltages Complementary n-p-n and p-n-p types JEDEC TO-220AB @ Maximum sale-area-ol-operation curves The RCA-BD533-BD538 are epitaxial-base silicon transis- tors Intended for a wide variety of medium-power switching and amplifier applications, such as series and shunt regula- tors and driver and output stages of high-fidelity amplifiers. The BD533, BD535, and BD537 are n-p-n complements of p-n-p types BD534, BD536, and BD538, respectively. All types are supplied in the JEDEC TO-220AB (VERSA- WATT) MAXIMUM RATINGS, Absolute-Maximum Values: N-P-N BD533 BO535 BD537 P-N-P BD534" BDS5368 BDS36a Men ee ee eee 45 60 80 Vv Vces(sus) 45 60 80 Vv Veeo(SUS) cece c ccc e cee ee eee ree een nee eee nente nee 45 60 80 Vv Vieng sees eee 5 v Vo cece cence een eee nee teee 8 A Va crecer ete eeeeeceneenteeraeecees 1 A Py Tes 25C 50 Ww To > 25C derate linearly 0.4 WiC Tyg Ty ce teeccneeerenernecsnneece panne eens ________ 65 to 160 _________ c T At distances = 1/8 in. (3.17 mm) from Case for 10S MAX. vee ccc ee ee es eer wens been eet eenen ines 235 C uFor p-n-p devices, voltage and current values are negative. 552 __ 1090 A-07Ou de 3875081 oo17s4a a J 3875081 G E SOLID STATE OE 17548 oD OTe SSIl Pro Electron Power Transistors = BD533, BD534, BD535, BD536, BD537, BD538 ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 25C -T Ay A: oe | Unless Otherwise Specifled , TEST CONDITIONSA LIMITS CHARAC:- VOLTAGE | CURRENT BD33 BDS535 BD537 TERISTIC Vde Adc BD5344 BDS364 BD5384 |UNITS Voce} Vee] !c | tp } MIN.| MAX.) MIN} MAX] MIN.| MAX. 452 wf-y-| y; IcBo 80 _ - ; 100) _ B08 }{|-|- | ]|] | 100 A 45 |two;/-}| -| e ICES 60 - nd | 1000) _ 80 ~|- | | | | 10 lEBO 5 _ 1 - 1 - 1 mA Voeo(sus) 01 | 0 451 | 6) j} 8] Vv 5 0.01 20 - 20 - 16 ~~ hre 2 0.5" 40} | 40; | 40] 2 2 25 _ 26 - 15 hfe Groups J 2 2 30 75 30 75 30 76 2 3 15 - 15 - 15 _ K 2 2 40 | 100 | 40 | 100 | 40 | 100 2 3 20 _- 20 - 20 _ L 2 2 60 | 150 | ~j), | |] (For BD533, . BD534 only) 2 3 eye yr tryst VBE 2 2 |15 | | 15] |] 15 VcE(sat) 2 | 02 - 0.8 _ 0.8 - 0.8 V 6 | 06 jose} jose} joee!] fr 1 0.5 3 12 3 12| 3 12 | MHz Rec - 25 | 2.5 _ 25 Ciw 4 For p-n-p devices, voltage and current values are negative. Vop value . CAUTION: The sustaining valtage VcEa(sus) MUST NOT be measured on a curve tracer, Pulsed: Pulse duration = 300 us, duly factor = 1.5%. Typical values. TRANSISTOR DISSIPATION (Pyi Ww CASE TEMPERATURE (To )*C 92CS-32508 Fig. 1Derating curve for all types. COLLECTOR - TO- EMITTER VOLTAGE sev CURRENT (Tc) -A URC 82893 Fig. 2Typical de beta characteristic for 80533, BD535, and 8D537 types. 553 1091 A-083875081 GE Pro Electron Power Transistors O1E 17549 DD T33-( | BD533, BD534, BD535, BD536, BD537, BD538 g| CASE TEMPERATURE (To )= 28C (CURVES MUST BE OERATED LINEARLY WITH INCREASE IN TEMPERATURE) Ic (MAX. 0 continuous 8 Frit 6 OLSSIPATION = LIMITED 2 EEE PETA eres et COLLECTOR CURRENT (Ic )A 1 ceg (MAX) 45 V (80553, 534) H VCE (MAX) #60 V (80535, 536) o,f: Yceo (MAX) =80 v (60532,539) freer ofefeoftbenr = ETT STHL Sas Postpretect pt eteb fetes feepetstibet sit pettferbaed +t} 2 4 64 2 ! io COLLECTOR -TO-EMITTER VOLTAGE (Vop) S2CM-32598 Fig. 3Maximum safe-operating areas for ail types. COLLECTOR-TO- EMITTER VOLTAGE & 9 a < 5 a z < = = COLLECTOR CURRENT (aga 9205-32594 Fig. 4Typical dc beta characteristic for 8D534, BD536, and 8D538 types. =10" coLLEcToR CURRENT ITgI-A 0 9205-32596 Fig. 6Typical collector-to-emitter saturation voltage characteristic for BD534, 8D536, and BD538 types. 554 hpe sto io"! COLLECTOR CURRENT (Te l-A 9205-97595 Fig. 5Typical collector to-emitter saturation voltage characteristic for BD533, 8D535, and BD537 types. bre 10 i TTTt . a TTT BASE-TO-EMITIER SATURATION VOLTAGE Wge (act 10"! COLLECTOR CURRENT I ZIA azes-s2na7 Fig, 7Typical base-to-emitter saturation voltage characteristic for BD533 80535, and BD537 types. 1092 A-09 T3342) ~*~Ou def) 3e7so81 oo17sso & i S7E 17550 oT 33-(/ : Pro Electron Power Transistors 3875081 G E SOLID STATE BD533, BD534, BD535, BD536, BD537, BD538 *E ape tio cASe TEWFeRATURE te Eset . T BA > oe { lw o f io 2s Tous 4 2 oF eb s z eS ft z - 5 r n S mM ei ' C A 3 tol Ma azo tl : E NY xe be = eT z E eof ze gor a oF a of 0"! - * Foto 107! 10 COLLECTOR CURRENT {Lo }A zcs-s2619 COLLECTOR CURRENT{Ig}A S23 ~52599 Fig. 8Typical base-to-emitter saturation Fig, 9Typical gain-bandwidth product voltage characteristic for BD534, characteristic for 8D533, 8D535, and BD536, and BD538 types. BD537 types. 201. Tease TEMPERATURE (Te }* 25C r Voct bY 1g, *% z bo ws aperto I a 1 Vogt 30V zt | N L 5 OL 2c . NN ao. ze ie z of | - 8 BL : z z t = Zz eT : L 4 i. oO of -107! 7 +10 to! i 10 COLLECTOR CURRENT (IchA = s2c$- 37600 COLLECTOR CURRENT (EIA g25-szeor Fig. 10Typical gain-bandwidth product Fig. 11--Typical saturated-switching time characteristic for 8D534, BD536, characteristics for BD533, BD535, and and 8D538 types. BD537 types. 10 -107! z 4 68 8 2 a 6 big ro 1 u COLLECTOR CURRENT (I}A 928- 32607 COLLECTOR- T0- BASE VOLTAGE WVcg!= 9203-32603 Fig. 12Typical saturated switching time Fig. 18~Typical common-base output capaci- characteristics for BD534, 8D536, and tance characteristic for BD533, BD538 types. 8D535, and BD537 types. 555 1093 A-109 | 3875081 G E SOLID STATE. OTE 17551 Pro Electron Power Transistors D533, BD534, BD535, BD536, BD537, BD538 Tels 556 er 10? +0 =I 0 _ COLLECTOR -10-BASE VOLTAGE (VopI-Vgaca-apens Fig. 14Typical common-base ouipui capaci- tance characteristic for BD534, 80536, and 8D538 types. 0 T3S/I TT 4R-al ~ 1094 A~-11