Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-emitter class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi-carrier base station RF power amplifiers. 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR * Specified 26 Volts, 2.0 GHz, Class AB, Two-Tones Characteristics Output Power -- 30 Watts (PEP) Power Gain -- 9.8 dB Efficiency -- 34% Intermodulation Distortion -- -28 dBc * Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power -- 30 Watts Power Gain -- 11 dB Efficiency -- 40% Intermodulation Distortion -- -30 dBc CASE 395C-01, STYLE 1 * Excellent Thermal Stability * Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Designed for FM, TDMA, CDMA, and Multi-Carrier Applications Note: Not suitable for class A operation. MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc Collector-Emitter Voltage VCES 60 Vdc Collector-Base Voltage VCBO 60 Vdc Collector-Emitter Voltage (RBE = 100 ) VCER 30 Vdc Collector-Emitter Voltage Emitter-Base Voltage VEB -3 Vdc Collector Current - Continuous IC 4 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 125 0.71 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 1.4 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case (1) (1) Thermal resistance is determined under specified RF operating condition. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) V(BR)CEO 25 28 -- Vdc Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 60 70 -- Vdc Collector-Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 60 70 -- Vdc OFF CHARACTERISTICS REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1999 (Replaces MRF20030/D) MRF20030R 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)EBO 3 3.8 -- Vdc ICES -- -- 10 mAdc hFE 20 40 80 -- Cob -- 28 -- pF Gpe 9.8 11 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 34 38 -- % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- - 30 - 28 dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 10 17 -- dB OFF CHARACTERISTICS Emitter-Base Breakdown Voltage (IB = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, ICE = 1 Adc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Load Mismatch (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) No Degradation in Output Power Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gpe -- 11 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) -- 34 -- % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD -- - 32 -- dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL -- 14 -- dB Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz) Gpe -- 10.5 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) -- 40 -- % Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) IRL -- 14 -- dB GUARANTEED BUT NOT TESTED (In Motorola Test Fixture) Output Mismatch Stress (VCC = 25 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) Typically No Degradation in Output Power (1) For Information Only. This Part Is Collector Matched. MRF20030R 2 MOTOROLA RF DEVICE DATA VBB R1 R2 L4 L1 Q2 B1 D1 VCC B2 C8 C6 + + Q1 C1 R3 C2 R5 R8 C9 C7 R4 C13 C14 R7 R6 L4 L2 Z5 RF INPUT Z1 C3 B1, B2 C1, C13 C2 C3, C5, C12 C4, C11 C6, C8 C7, C9 C10 C14 D1 L1, L4 L2, L3 Z2 Z3 C4 Z6 Z7 Z8 Z4 C5 Ferrite Bead, P/N 5659065/3B, Ferroxcube 0.1 F, Chip Capacitor, Kermet 100 F, 50 V, Electrolytic Capacitor, Mallory 0.6-4 pF, Variable Capacitor, Johanson, Gigatrim 10 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 75 pF, B Case Chip Capacitor, ATC 0.4-2.5 pF, Variable Capacitor, Johanson, Gigatrim 470 F, 63 V, Electrolytic Capacitor, Mallory Diode, Motorola (MUR3160T3) 12 Turns, 22 AWG, IDIA. 0.195 0.750 20 AWG DUT N1, N2 R1, R2 R3, R4 R5, R8 R6, R7 Q1 Q2 Board C10 C11 RF OUT C12 Type N Flange Mount RF Connector MA/COM 3052-1648-10 130 , 1/8 W Chip Resistor, Rohm 100 , 1/8 W Chip Resistor, Rohm 10 , 1/2 W Resistor 10 , 1/8 W Chip Resistor, Rohm (10J) Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) 30 Mil Glass Teflon, Arlon GX-0300-55-22, r = 2.55 Figure 1. Class AB Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF20030R 3 11.5 40 30 11 35 Pin = 3.5 W 30 2.5 W Pout 25 10.5 20 10 9.5 9 10 VCC = 26 Vdc ICQ = 125 mA f = 2000 MHz Single Tone 5 8.5 1 0 3 2 Pin, INPUT POWER (WATTS) 4 20 1.5 W 15 10 VCC = 26 Vdc ICQ = 125 mA 5 0 1800 8 5 0 25 - 20 1950 2000 -5 11.5 11 -10 3rd Order - 30 10.5 - 40 5th Order - 50 7th Order VCC = 26 Vdc ICQ = 125 mA f1 = 2000.0 MHz f2 = 2000.1 MHz - 60 - 70 0 5 Gpe -20 9.5 -25 9 -30 Pout = 30 W (PEP) ICQ = 125 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 8.5 8 10 30 15 25 20 Pout, OUTPUT POWER (WATTS) PEP 35 40 7.5 - 30 11 G pe , POWER GAIN (dB) 12 - 40 - 45 125 mA - 50 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz - 55 400 mA - 60 0.01 0.1 1.0 -40 20 250 mA 9 125 mA 8 7 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 5 0.01 75 mA 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power Figure 7. Power Gain versus Output Power MRF20030R 4 -45 28 ICQ = 400 mA 6 10 -35 24 26 22 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) 18 10 ICQ = 75 mA 250 mA IMD Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage - 25 - 35 -15 10 Figure 4. Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) 1900 f, FREQUENCY (MHz) Figure 3. Output Power versus Frequency G pe , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Power & Power Gain versus Input Power 1850 IMD, INTERMODULATION DISTORTION (dBc) Gpe 15 Pout , OUTPUT POWER (WATTS) 35 G pe , GAIN (dB) Pout , OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS 100 MOTOROLA RF DEVICE DATA Gpe G pe , GAIN (dB) 10.5 36 10 34 9.5 32 VSWR 9 1800 1850 1900 f, FREQUENCY (MHz) 1950 28 2000 COLLECTOR EFFICIENCY (%) 38 Pout = 30 W (PEP) VCC = 26 Vdc ICQ = 125 mA INPUT VSWR 11 1.7:1 1.1:1 Figure 8. Performance in Broadband Circuit MTBF FACTOR (HOURS x AMPS 2 ) 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (C) 250 This above graph displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by IC2 for MTBF in a particular application. Figure 9. MTBF Factor versus Junction Temperature MOTOROLA RF DEVICE DATA MRF20030R 5 + j1 + j0.5 + j2 f = 1.8 GHz 1.85 GHz Zin + j0.2 + j5 1.9 GHz 1.95 GHz 2 GHz f = 1.8 GHz ZOL* 1.95 GHz 1.9 GHz 0.2 0.0 + j3 Zo = 10 + j10 1.85 GHz 0.5 1 2 3 5 - j10 - j5 - j0.2 - j3 - j2 - j0.5 - j1 VCC = 26 V, ICQ = 125 mA, Pout = 30 W (PEP) f MHz Zin(1) ZOL* 1800 4.5 + j7.0 4.7 + j2.4 1850 4.5 + j6.0 4.4 + j1.6 1900 4.5 + j4.6 3.4 + j1.2 1950 3.7 + j2.4 3.3 + j1.6 2000 3.5 + j1.5 3.5 + j2.0 Zin(1)= Conjugate of fixture base impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 10. Series Equivalent Input and Output Impedence MRF20030R 6 MOTOROLA RF DEVICE DATA Table 1. Common Emitter S-Parameters at VCE = 24 Vdc, IC = 1.8 Adc f GHz GH S11 f |S11| S21 |S21| f S12 |S12| f S22 |S22| f 1.5 .964 158 .65 74 .046 60 .859 161 1.55 .960 156 .74 68 .047 56 .841 161 1.6 .952 155 .87 60 .049 53 .815 160 1.65 .933 153 1.05 50 .048 46 .787 161 1.7 .892 149 1.32 35 .047 40 .744 163 1.75 .804 149 1.64 13 .040 29 .719 168 1.8 .727 157 1.78 -18 .026 21 .778 175 1.85 .787 163 1.50 -50 .015 54 .883 174 1.9 .873 163 1.14 -73 .020 81 .937 171 1.95 .921 160 .84 -89 .026 88 .949 168 2 .941 157 .62 -102 .031 93 .950 165 2.05 .943 155 .48 -109 .036 93 .946 164 2.1 .940 153 .38 -118 .040 92 .942 163 2.15 .928 151 .30 -127 .042 97 .939 162 2.2 .917 150 .24 -133 .049 99 .935 161 2.25 .907 150 .20 -140 .056 101 .933 160 2.3 .888 148 .17 -150 .066 100 .926 159 2.35 .861 148 .14 -159 .077 98 .916 157 2.4 .853 149 .11 -167 .087 92 .909 157 2.45 .860 146 .10 -176 .095 89 .900 155 2.5 .880 146 .10 156 .119 84 .880 155 MOTOROLA RF DEVICE DATA MRF20030R 7 PACKAGE DIMENSIONS -A- U Q 2 PL 1 0.51 (0.020) M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K N Q U -B- 3 K 2 D N INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER E J C H -T- SEATING PLANE CASE 395C-01 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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