1
MRF20030RMOTOROLA RF DEVICE DATA
The RF Sub–Micron Bipolar Line
Designed for broadband commercial and industrial applications at frequen-
cies from 1800 to 2000 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common–emitter class AB amplifier
applications. Suitable for frequency modulated, amplitude modulated and
multi–carrier base station RF power amplifiers.
•Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
Output Power — 30 Watts (PEP)
Power Gain — 9.8 dB
Efficiency — 34%
Intermodulation Distortion — –28 dBc
•Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power — 30 Watts
Power Gain — 11 dB
Efficiency — 40%
Intermodulation Distortion — –30 dBc
•Excellent Thermal Stability
•Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)
Output Power
•Characterized with Series Equivalent Large–Signal Impedance Parameters
•S–Parameter Characterization at High Bias Levels
•Designed for FM, TDMA, CDMA, and Multi–Carrier Applications
Note: Not suitable for class A operation.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 25 Vdc
Collector–Emitter V oltage VCES 60 Vdc
Collector–Base Voltage VCBO 60 Vdc
Collector–Emitter V oltage (RBE = 100 Ω) VCER 30 Vdc
Emitter–Base Voltage VEB –3 Vdc
Collector Current – Continuous IC4 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD125
0.71 Watts
W/°C
Storage Temperature Range Tstg – 65 to +150 °C
Operating Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction to Case (1) RθJC 1.4 °C/W
(1) Thermal resistance is determined under specified RF operating condition.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0) V(BR)CEO 25 28 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0) V(BR)CES 60 70 — Vdc
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0) V(BR)CBO 60 70 — Vdc
Order this document
by MRF20030R/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
CASE 395C–01, STYLE 1
Motorola, Inc. 1999
(Replaces MRF20030/D)
REV 1
MRF20030R
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Emitter–Base Breakdown Voltage
(IB = 5 mAdc, IC = 0) V(BR)EBO 3 3.8 — Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0) ICES — — 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 5 Vdc, ICE = 1 Adc) hFE 20 40 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) Cob —28 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 30 W atts, ICQ = 120 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gpe 9.8 11 — dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 30 W atts (PEP), I CQ = 120 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η34 38 — %
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 30 W atts (PEP), I CQ = 120 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD — –30 –28 dBc
Input Return Loss
(VCC = 26 Vdc, Pout = 30 W atts (PEP), I CQ = 125 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL 10 17 — dB
Load Mismatch
(VCC = 26 Vdc, Pout = 30 W atts (PEP), I CQ = 120 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψNo Degradation in Output Power
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 30 W atts (PEP), I CQ = 125 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gpe —11 — dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 30 W atts (PEP), I CQ = 125 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η— 34 — %
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 30 W atts (PEP), I CQ = 125 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD — –32 — dBc
Input Return Loss
(VCC = 26 Vdc, Pout = 30 W atts (PEP), I CQ = 125 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL — 14 — dB
GUARANTEED BUT NOT TESTED (In Motorola Test Fixture)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 30 W atts, ICQ = 125 mA, f = 1880 MHz) Gpe —10.5 — dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 30 W atts , ICQ = 125 mA, f = 1880 MHz) η— 40 — %
Input Return Loss
(VCC = 26 Vdc, Pout = 30 W atts , ICQ = 125 mA, f = 1880 MHz) IRL — 14 — dB
Output Mismatch Stress
(VCC = 25 Vdc, Pout = 30 W atts, ICQ = 125 mA,
f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) ψTypically No Degradation in Output Power
(1) For Information Only. This Part Is Collector Matched.
3
MRF20030RMOTOROLA RF DEVICE DATA
R7
Figure 1. Class AB Test Fixture Electrical Schematic
B1, B2 Ferrite Bead, P/N 5659065/3B, Ferroxcube
C1, C13 0.1 µF, Chip Capacitor, Kermet
C2 100 µF, 50 V, Electrolytic Capacitor, Mallory
C3, C5, C12 0.6–4 pF, Variable Capacitor, Johanson, Gigatrim
C4, C11 10 pF, B Case Chip Capacitor, ATC
C6, C8 24 pF, B Case Chip Capacitor, ATC
C7, C9 75 pF, B Case Chip Capacitor, ATC
C10 0.4–2.5 pF, Variable Capacitor , Johanson, Gigatrim
C14 470 µF, 63 V, Electrolytic Capacitor, Mallory
D1 Diode, Motorola (MUR3160T3)
L1, L4 12 T urns, 22 AWG, IDIA. 0.195″
L2, L3 0.750″ 20 AWG
N1, N2 Type N Flange Mount RF Connector
MA/COM 3052–1648–10
R1, R2 130 Ω, 1/8 W Chip Resistor, Rohm
R3, R4 100 Ω, 1/8 W Chip Resistor, Rohm
R5, R8 10 Ω, 1/2 W Resistor
R6, R7 10 Ω, 1/8 W Chip Resistor, Rohm (10J)
Q1 T ransistor, PNP Motorola (BD136)
Q2 T ransistor, NPN Motorola (MJD47)
Board 30 Mil Glass Teflon, Arlon GX–0300–55–22,
εr = 2.55
RF
INPUT
RF
OUT
DUT
Z8
Z1 Z2 Z3 Z4 Z5 Z6 Z7
VBB
VCC
Q2
Q1
D1
R2
C1 C2 R5
L1
R3
C6
C7
L2
C4
C3 C5
C8
C9
L4
C12
B2
C13 C14
R8
L4
C11
C10
R1
R4
B1
R6
++
MRF20030R
4MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Gpe, POWER GAIN (dB) Gpe, GAIN (dB)
Figure 2. Output Power & Power Gain
versus Input Power
30
Pin, INPUT POWER (WATTS)
5
02
10
20
15
Figure 3. Output Power versus Frequency
01850 f, FREQUENCY (MHz)
40
20
5
135
30
P
out, OUTPUT POWER (WATTS)
1800 20000
P
out, OUTPUT POWER (WATTS)
25
11
10
9
8
Gpe, GAIN (dB)
1900 1950
Figure 4. Intermodulation Distortion
versus Output Power
–20
P
out, OUTPUT POWER (W ATTS) PEP
–70 20
Figure 5. Power Gain and Intermodulation
Distortion versus Supply Voltage
10.5
VCC, COLLECTOR SUPPLY VOL TAGE (Vdc)
9
10 30 40
8
IMD, INTERMODULA TION DISTOR TION (dBc)
Figure 6. Intermodulation Distortion
versus Output Power
0.01 Pout, OUTPUT POWER (W ATTS) PEP
–45
–60 10
–35
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (W ATTS) PEP
51.0
10
10
1.0 100 1000.01
0
6
7
8
9.5
8.5
7.5 20 2218
–50
–40
–25
IMD, INTERMODULA TION DISTOR TION (dBc)
–45
–35
IMD, INTERMODULA TION DISTOR TION (dBc)
VCC = 26 Vdc
ICQ = 125 mA
f = 2000 MHz Single Tone
35
24 26 28
12
11.5
–25
–20
–15
–10
–5
–60
–50
–40
–30
10
25
15
Pout = 30 W (PEP)
ICQ = 125 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
IMD
Gpe
Pout
3rd Order
7th Order
5th Order
Pin = 3.5 W
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
250 mA
125 mA
ICQ = 75 mA
VCC = 26 Vdc
ICQ = 125 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
4
–55
15525
35
75 mA
250 mA
125 mA
11.5
10.5
9.5
8.5
1.5 W
35
2.5 W
10
11
Gpe
–40
–30
–30 11
9
ICQ = 400 mA
VCC = 26 Vdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
0.1
0.1
400 mA
VCC = 26 Vdc
ICQ = 125 mA
5
MRF20030RMOTOROLA RF DEVICE DATA
Figure 8. Performance in Broadband Circuit
f, FREQUENCY (MHz) 2000190018501800
11
10
9.5
9
38
34
32
28
COLLECT OR EFFICIENCY (%)INPUT VSWR
Gpe, GAIN (dB)
10.5 36
Gpe
VSWR
η
Pout = 30 W (PEP)
VCC = 26 Vdc
ICQ = 125 mA
1950
1.7:1
1.1:1
Figure 9. MTBF Factor versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (
°
C) 250200150100500
1.E+08
1.E+07
1.E+05
1.E+04
1.E+03
1.E+02
MTBF FACTOR (HOURS x AMPS )
This above graph displays calculated MTBF in hours x ampere2
emitter current. Life tests at elevated temperatures have correlated
to better than
±
10% of the theoretical prediction for metal failure.
Divide MTBF factor by IC2 for MTBF in a particular application.
1.E+06
1.E+09
1.E+10
2
MRF20030R
6MOTOROLA RF DEVICE DATA
Figure 10. Series Equivalent Input and Output Impedence
f
MHz Zin(1)
ΩZOL*
Ω
1800
1850
1900
1950
4.5 + j7.0
4.5 + j4.6
4.5 + j6.0
3.7 + j2.4
4.7 + j2.4
4.4 + j1.6
3.4 + j1.2
3.3 + j1.6
Zin(1)= Conjugate of fixture base impedance.
ZOL* = Conjugate of the optimum load impedance at
given output power, voltage, bias current and
frequency.
VCC = 26 V, ICQ = 125 mA, Pout = 30 W (PEP)
+j1
+j2
+j3
+j5
+j0.5
+j0.2
–j1
–j2
–j3
–j5
–j10
–j0.5
–j0.2
+j10
0.0 0.5 12
35
Z
OL*
Zin
Zo = 10
Ω
1.9 GHz
f = 1.8 GHz
2000 3.5 + j1.5 3.5 + j2.0
1.95 GHz
1.85 GHz
0.2
1.95 GHz
2 GHz
1.85 GHz
f = 1.8 GHz
1.9 GHz
7
MRF20030RMOTOROLA RF DEVICE DATA
Table 1. Common Emitter S–Parameters at VCE = 24 Vdc, IC = 1.8 Adc
f
GH
S11 S21 S12 S22
GHz |S11|
f
|S21|
f
|S12|
f
|S22|
f
1.5 .964 158 .65 74 .046 60 .859 161
1.55 .960 156 .74 68 .047 56 .841 161
1.6 .952 155 .87 60 .049 53 .815 160
1.65 .933 153 1.05 50 .048 46 .787 161
1.7 .892 149 1.32 35 .047 40 .744 163
1.75 .804 149 1.64 13 .040 29 .719 168
1.8 .727 157 1.78 –18 .026 21 .778 175
1.85 .787 163 1.50 –50 .015 54 .883 174
1.9 .873 163 1.14 –73 .020 81 .937 171
1.95 .921 160 .84 –89 .026 88 .949 168
2 .941 157 .62 –102 .031 93 .950 165
2.05 .943 155 .48 –109 .036 93 .946 164
2.1 .940 153 .38 –118 .040 92 .942 163
2.15 .928 151 .30 –127 .042 97 .939 162
2.2 .917 150 .24 –133 .049 99 .935 161
2.25 .907 150 .20 –140 .056 101 .933 160
2.3 .888 148 .17 –150 .066 100 .926 159
2.35 .861 148 .14 –159 .077 98 .916 157
2.4 .853 149 .11 –167 .087 92 .909 157
2.45 .860 146 .10 –176 .095 89 .900 155
2.5 .880 146 .10 156 .119 84 .880 155
MRF20030R
8MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 395C–01
ISSUE A
U
D
K
N
J
H
E
C
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.739 0.750 18.77 19.05
INCHES
B0.240 0.260 6.10 6.60
C0.165 0.198 4.19 5.03
D0.215 0.225 5.46 5.72
E0.055 0.070 1.40 1.78
H0.079 0.091 2.01 2.31
J0.004 0.006 0.10 0.15
K0.210 0.240 5.33 6.10
N0.315 0.330 8.00 8.38
Q0.125 0.135 3.18 3.42
U0.560 BSC 14.23 BSC
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
–T–
1
2
3
–A–
–B–
2 PLQ
M
A
M
0.51 (0.020) B M
T
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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MRF20030R/D
◊
